Effect of substrate temperature on structural and electrical properties of BaZr0.2Ti0.8O3 lead-free thin films by pulsed laser deposition

Barium zirconate titanate (BaZr_0.2Ti_0.8O₃, BZT) 250 nm thick thin films were fabricated by pulsed laser deposition and the influence of the substrate temperature on their preferred orientation, microstructure, morphology and dielectric properties was investigated. Dielectric measurements indicated the (1 1 0)-oriented BZT thin films deposited at 750 °C to show good dielectric properties with high dielectric constant (~500 at 100 kHz), low loss tangent (<0.01 at 100 kHz), and superior tunability (>70% at 400 kV/cm), while the largest figure of merit was 78.8. The possible microstructural background responsible for the high dielectric constant and tenability is discussed. In addition, thin films deposited at 750 °C with device quality factor of 8738 and dielectric nonlinearity coefficient of 1.66×10⁻¹⁰ J/C⁴m⁵ were demonstrated.     

Preparation and characterization of Al-doped ZnO piezoelectric thin films grown by pulsed laser deposition

Undoped and Al-doped ZnO (AZO) thin films (Al: 3, 5 at%) using a series of high quality ceramic targets have been deposited at 450 ºC onto glass substrates using PLD method. The used source was a KrF excimer laser (248 nm, 25 ns, 2 J/cm²). The study of the obtained thin films has been accomplished using X-ray diffraction (XRD), M-lines spectroscopy and Rutherford backscattering spectroscopy (RBS). XRD patterns have shown that the films crystallize in a hexagonal wurtzite type structure with a highly c-axis preferred (002) orientation, and the grain sizes decrease from 37 to 25 nm with increasing Al doping. The optical waveguiding properties of the films were characterized by means of the prism-coupling method. The distinct M-lines of the guided transverse magnetic (TM) and transverse electric (TE) modes of the ZnO films waveguide have been observed. The M-lines device has allowed determination of the accurate values of refractive index and thickness of the studied ZnO and AZO thin films. An evaluation of experimental uncertainty and calculation of the precision of the refractive index and thickness were developed on ZnO films. The RBS results agree with XRD and m-lines spectroscopy measurements.     

Structural,optical and electrical properties of low temperature grown undoped and (Al,Ga) co-doped ZnO thin films by spray pyrolysis

Aluminum and gallium co-doped ZnO (AGZO) thin films were grown by simple, flexible and cost-effective spray pyrolysis method on glass substrates at a temperature of 230 °C. Effects of equal co-doping with aluminum (Al) and gallium (Ga) on structural, optical and electrical properties were investigated by X-ray diffraction (XRD), UV–vis–NIR spectrophotometry and Current–Voltage (I–V) measurements, respectively. XRD patterns showed a successful growth with high quality polycrystalline films on glass substrates. The predominant orientation of the films is (002) at dopant concentrations ≤2 at% and (101) at higher dopant concentrations. Incorporation of Al and Ga to the ZnO crystal structure decreased the crystallite size and increased residual stress of the thin films. All films were highly transparent in the visible region with average transmittance of 80%. Increasing doping concentrations increased the optical band gap, from 3.12 to 3.30 eV. A blue shift of the optical band gap was observed from 400 nm to 380 nm with increase in equal co-doping. Co-doping improved the electrical conductivity of ZnO thin films. It has been found from the electrical measurements that films with dopant concentration of 2 at% have lowest resistivity of 1.621×10⁻⁴ Ω cm.     

Dispersive optical constants and electrical properties of nanocrystalline CuInS2 thin films prepared by chemical spray pyrolysis

Nanocrystalline CuInS₂ thin films were deposited on borosilicate glass substrates via chemical spray pyrolysis method. The structural, morphological, optical, and electrical properties were studied as a function of increasing annealing temperature from 250 to 350 ̊C. XRD analysis showed mixed phases at lower temperatures with the preferred orientation shifting towards the (112) chalcopyrite CuInS₂ plane at higher substrate temperature. The crystallite size increased slightly between 13 and 18 nm with increase in annealing temperature. The optical band gap was determined on basis of Tauc extrapolation method and the Wemple–Di-Domenico single oscillator model. Possible structural and quantum confinement effect may have resulted in relatively larger band gaps of 1.67–2.04 eV, relative to the bulk value of 1.5 eV. The presence of Cu_xS in the as-deposited and wurtzite peaks after annealing at 350 ^̊C play a role in influencing the optical and electrical properties of CuInS₂ thin films.     

Heat treatment effects on the structural and optical properties of thin Bi2(Se1-xTex)3 films

Thin layers of Bi₂-chalcogenides, in the form of Bi₂(Se_1-xTe_x)₃ films, were evaporated on glass substrates by means of the vacuum thermal evaporation. Microstructure of the as prepared layers was investigated by x-ray diffraction (XRD) analysis. Identifications of the surface morphology and roughness were determined via scanning electron microscope (SEM). Optical transmissivity spectra proved that the as prepared films have low transparency with growing trend upon increasing the wavelength beyond the infra-red region. Low transmittance was observed for the as prepared films. Heat treatment, in the form of temperature annealing, was carried out aiming at boosting the structural features and the materials transmissivity. Structural properties and surface features of the annealed films were probed also via XRD and SEM analyses. It was found that the crystal size increases while the micro-strain and the dislocation density decrease obviously due to annealing. It was also observed that the annealing process significantly enhances the materials transmission especially in the range of higher wavelengths. Optical band gap was studied after annealing at various temperatures. Notable change in the band gap value was observed as a result of annealing. The band gap of the undoped (Bi₂Se₃) materials showed significant rise from 0.14 to 1.79 eV due to annealing. Similarly, the Te-doped samples exhibited notable increase in their band gap values after annealing. For example, the optical band gap of the sample doped at x = 0.20 increased from 0.03 to 0.41 eV by annealing. On the other hand, transmittance was also enhanced by annealing. For samples treated at 250 °C for 3 h, their optical transmissivity is enhanced to over 99% at the visible near-IR range. Such significant enhancement can be ascribed to structural enhancements. With such enhancement in the optical transmissivity, optoelectronic applications including transparent electrode can be met.     

Effect of temperature on sulfur-doped diamond-like carbon films deposited by pulsed laser ablation

In this study, S-DLC films were deposited using pulsed laser ablation of a novel sulfur-graphite (SG) mixture target using an ArF excimer laser (193 nm). The SG targets were made by mixing sulfur and graphite powders at different sulfur molar percentages from 0% to 25%. The S-DLC films were deposited at room temperature, 150 °C and 250 °C. The optical and electronic properties of the doped films were studied. Laser Raman spectroscopy indicated increased graphitic behavior with temperature but decreased with higher sulfur content. Spectroscopic ellipsometry analyses found that the optical band-gap energy, extinction coefficient and reflective index, clearly depended on deposition temperature and sulfur content. Hall Effect measurements indicated n-type carrier with concentration in the range of 1 × 10¹⁴ to 2 × 10¹⁷ cm^− 3, strongly depended upon the deposition temperature and amount of sulfur.     

Effect of withdrawal rate on the evolution of optical properties of dip-coated yttria-doped zirconia thin films

In this work, the Swanepoel method is described and applied for determining various optical parameters and thicknesses of dip–coated yttria–doped zirconia thin films. Using this method the influence of the withdrawal rate on optical parameters was studied. The characterization of the deposited thin films was carried out by optical microscopy and FT–IR spectrophotometry. As expected, coating thickness was closely related to the withdrawal rate and consequently influenced optical parameters such as refractive index, extinction coefficient, and absorption coefficient. Regarding the average refractive index of the prepared thin films, n is in the 2.0 – 2.2 range, the higher refractive index average value being obtained with films deposited at 25 mm min⁻¹ (n = 2.19). The value of the optical band gap was also studied, this increased with withdrawal rate and was quite similar to values reported by other investigators at 50, 25 and 10 mm min⁻¹. Thus, this study proposes analysing the influence of the withdrawal rate for the manufacture of different types of thin films with previously specified optical parameters.     

Effect of annealing on SiC thin films prepared by pulsed laser deposition

Crystalline cubic SiC thin films were successfully fabricated on Si(100) substrates by using laser deposition combined with a vacuum annealing process. The effect of annealing conditions on the structure of the thin films was investigated by X-ray diffraction and Fourier transform infrared spectroscopy. It was demonstrated that amorphous SiC films deposited at 800°C could be transformed into crystalline phase after being annealed in a vacuum and that the annealing temperature played an important role in this transformation, with an optimum annealing temperature of 980°C. Results of X-ray photoelectron spectroscopy revealed the approximate stoichiometry of the SiC films. The characteristic microstructure displayed in a scanning electron microscope image of the films was indicative of epitaxial growth along the (100) plane.     

Tunable multiferroic properties of Mn substituted BiFeO3 thin films

The current study explored the influence of Mn substitution on the electrical and magnetic properties of BiFeO₃ (BFO) thin films synthesized using low cost chemical solution deposition technique. X-ray diffraction analysis revealed that pure rhombohedral phase of BiFeO₃ was transformed to the tetragonal structure with P4mm symmetry on Mn substitution. A leakage current density of 5.7×10⁻⁴ A/cm² which is about two orders of magnitude lower than pure BFO was observed in 3% Mn doped BFO thin film at an external electric field >400 kV/cm. A well saturated (p-E) loops with saturation polarization (P_sat) and remanent polarization (2P_r) as high as 60.34 µC/cm² and 25.06 µC/cm² were observed in 10% Mn substituted BFO thin films. An escalation in dielectric tunability (n_r), figure of merit (K) and quality factor (Q) were observed in suitable Mn doped BFO thin films. The magnetic measurement revealed that Mn substituted BFO thin films showed a large saturation magnetization compared to pure BFO thin film. The highest saturation ~31 emu/cc was observed for 3% Mn substituted BFO thin films.     

Influence of substrate temperature on the properties of (AlGa)2O3 thin films prepared by pulsed laser deposition

(AlGa)₂O₃ thin films were deposited on (0001) sapphire substrates by pulsed laser deposition at different substrate temperatures. The influence of substrate temperature on surface morphology, optical properties, and crystal quality has been systematically investigated by atomic force microscope, transmission spectra, X-ray diffraction, and Raman spectroscopy. The results reveal that all the (AlGa)₂O₃ films have smooth surface and high transmittance. The (AlGa)₂O₃ film with the good crystal quality can be obtained at a substrate temperature of 400 °C. Our results provide an experimental basis for realizing the Ga₂O₃-based quantum well.     

Aliovalent Ho3+ ion doped BaZrO3 thin films; Structural,optical and photoluminescence properties

Ho doped BaZrO3 thin film phosphors with varying Ho content (1, 2, 3 and 4?at%) were prepared via pulsed laser deposition technique. To understand the effect of doping on structural, morphological, optical and emission properties of thin films, X-ray Diffractrometer (XRD), Scanning Electron Microscopy (SEM), Spectroscopic Ellipsometry (SE) and Photoluminescence (PL) Spectroscopy have been used, respectively. Polycrystalline nature with single phase cubic crystalline structure of the films has been obtained. The optical band gap energy, as estimated by SE, has been found to increase with increase in the Ho content. The PL spectra of the synthesized phosphor exhibit green and yellow-orange as prominent emission bands in response to 328?nm as excitation wavelength.     

Microstructure and optical properties of nanocrystalline Cu2O thin films prepared by electrodeposition

Cuprous oxide (Cu₂O) thin films were prepared by using electrodeposition technique at different applied potentials (−0.1, −0.3, −0.5, −0.7, and −0.9 V) and were annealed in vacuum at a temperature of 100°C for 1 h. Microstructure and optical properties of these films have been investigated by X-ray diffractometer (XRD), field-emission scanning electron microscope (SEM), UV-visible (vis) spectrophotometer, and fluorescence spectrophotometer. The morphology of these films varies obviously at different applied potentials. Analyses from these characterizations have confirmed that these films are composed of regular, well-faceted, polyhedral crystallites. UV–vis absorption spectra measurements have shown apparent shift in optical band gap from 1.69 to 2.03 eV as the applied potential becomes more cathodic. The emission of FL spectra at 603 nm may be assigned as the near band-edge emission.     

Effects of power and temperature on the structural,anti-icing,wettability, and optical properties of zinc oxide thin films

Zinc oxide semiconductors have received significant research attention over the past decade owing to their diverse applications. In this paper, we report the development and characterisation of ZnO thin films prepared by radio-frequency (RF) magnetron sputtering. The optical, anti-icing, wettability, and structural properties of the films were investigated at various sputtering power levels and temperatures. With an increase in the power from 175 to 250 W, the ZnO thin films showed fine (002) structures. X-ray diffraction analysis of the coated thin films revealed a considerable increase in the (002) peak intensity along the c-axis with increasing power and temperature. Increasing the sputtering power from 175 to 250 W and the deposition temperature from 150 to 300 °C led to an increase in the average size of the grains from 10.548 to 13.151 nm and from 9.97 to 13.151 nm, respectively. The water contact angle possibly depends on the RF power and temperature employed for material deposition. Within the 350–800 nm range, the prepared films achieved optical transmissions of 92%–88%, refractive indices of 1.52–1.50, and band gaps of 3.28–3.24 eV. The anti-icing properties were also improved by adjusting the sputtering power and temperature during material deposition.     

Effect of EDTA concentration on the physical and optical properties of Cds thin films

Application of ethylenediamine tetraacetic acid (EDTA) in the chemical bath solution to enhance the physical and optical properties of chemical bath deposited CdS film was realised. The observed beneficial effect on the crystallisation of CdS crystallites in the bath solution followed by deposition on glass substrates reduces the amorphousity and enhances the crystallinity of the film. The optical transparency of the film attains a maximum of 80% over the wavelength range of 650–1100 nm for the film deposited from EDTA‐added solution having the concentration of 0.006 mol/L. Also, the observed intensity of the characteristic photoluminescence emission was found to be dependent on the concentration of EDTA in the bath solution. © 2011 Canadian Society for Chemical Engineering     

Impacts of thickness reduction and heat treatment on the optical properties of thin chalcogenide films

Bi-based chalcogenides, in the form of thin crystalline films, were deposited at different thicknesses onto highly cleaned glass slides with the aid of vacuum thermal evaporation technique. The influence of thermal annealing on the optical properties of Bi₂Te₃-Bi₂Se₃ films at different thicknesses is investigated in this work. Wavelength dependence of the optical transmittance and reflectance was recorded, for the as-prepared and the annealed films, in the wavelength range from 350 to 2700 nm using a double beam spectrophotometer. Fundamental optical properties such as absorption coefficient and energy band gap were derived based on the measured spectra and film's thickness. We demonstrate in the present work that the synergy of annealing and thickness reduction can be exploited for light transmittance enhancements, and consequently for optoelectronic applications including transparent conductive electrodes.     

Structure and optical properties of ZrxHf1-xO2 films deposited by pulsed laser co-ablation of Zr and Hf targets with the assistance of oxygen plasma

Group IVB metal oxides have demonstrated many potential applications in a variety fields owing to their excellent optical, mechanical, electrical, chemical and thermal properties. In this work, ternary oxides Zr_xHf_1-xO₂ films with variable compositions were deposited by pulsed laser co-ablation of a Zr target and a Hf target in an oxygen plasma generated by electron cyclotron resonance microwave discharge of O₂ gas. The oxygen plasma provided an environment containing a high concentration of reactive oxygen species for synthesizing oxides with the Zr and Hf species ablated from the Zr and Hf targets. The structure of the deposited films was characterized and the optical properties were evaluated together with the examination of the effects of post-deposition annealing on the structure and optical properties. The ternary Zr_xHf_1-xO₂ films are much alike with binary ZrO₂ and HfO₂ films in structure and optical properties. They have a monoclinic structure and are highly transparent in a wide spectral region from mid-ultraviolet to mid-infrared. The ultraviolet absorption edge and optical band gap vary slightly with the pulse energies of the laser beams ablating the targets. Annealing in N₂ resulted in the improvement in the film structure.     

Effect of precursor concentration on structural,morphological and opto-electric properties of ZnO thin films prepared by spray pyrolysis

Sprayed ZnO films were grown on glass substrate at 400 °C using zinc chloride as precursor with different molar concentrations varying from 0.05 to 0.2 M. X-ray diffraction patterns reveal that ZnO films are polycrystalline with hexagonal wurtzite structure with preferred orientation in (002) plane. Optical measurements show that transmittance reaches a maximum value of 95% in the visible region for ZnO films prepared from precursor with 0.05 M concentration. The films obtained from the precursor with 0.1 M concentration have the highest electrical conductivity and photocurrent values.     

Effect of sintering temperature on microstructure and mechanical properties of zirconia-toughened alumina machinable dental ceramics

This study investigated the effect of sintering temperature on the microstructure and mechanical properties of dental zirconia-toughened alumina (ZTA) machinable ceramics. Six groups of gelcast ZTA ceramic samples sintered at temperatures between 1100 °C and 1450 °C were prepared. The microstructure was investigated by mercury intrusion porosimetry (MIP), X-ray diffraction (XRD), and scanning electron microscopy (SEM) techniques. The mechanical properties were characterized by flexural strength, fracture toughness, Vickers hardness, and machinability. Overall, with increasing temperature, the relative density, flexural strength, fracture toughness, and Vickers hardness values increased and more tetragonal ZrO₂ transformed into monoclinic ZrO₂; on the other hand, the porosity and pore size decreased. Significantly lower brittleness indexes were observed in groups sintered below 1300 °C, and the lowest values were observed at 1200 °C. The highest flexural strength and fracture toughness of ceramics reached 348.27 MPa and 5.23 MPa m^1/2 when sintered at 1450 °C, respectively. By considering the various properties of gelcast ZTA that varied with the sintering temperature, the optimal temperature for excellent machinability was determined to be approximately 1200–1250 °C, and in this range, a low brittleness index and moderate strength of 0.74–1.19 µm^−1/2 and 46.89–120.15 MPa, respectively, were realized.     

Texture effect on the electrochemical properties of LiCoO2 thin films prepared by PLD

LiCoO₂ thin films were prepared by pulsed laser deposition (PLD) on Pt/Ti/SiO₂/Si (Pt) and Au/MgO/Si (Au) substrates, respectively. Crystal structures and surface morphologies of thin films were investigated by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The LiCoO₂ thin films deposited on the Pt substrates exhibited a preferred (0 0 3) texture with smooth surfaces while the LiCoO₂ thin films deposited on the Au substrates exhibited a preferred (1 0 4) texture with rough surfaces. The electrochemical properties of the LiCoO₂ films with different textures were compared with charge-discharge, dQ/dV, and Li diffusion measurements (PITT). Compared with the (1 0 4)-textured LiCoO₂ thin films, the (0 0 3)-textured thin films exhibited relatively lower electrochemical activity. However, the advantage of the (1 0 4)-textured film only remained for a small number of cycles due to the relatively faster capacity fade. Li diffusion measurements showed that the Li diffusivity in the (0 0 3)-textured film is one order of magnitude lower than that in the (1 0 4)-textured film. As discussed in this paper, we believe that Li diffusion through grain boundaries is comparable to or even faster than Li diffusion through the grains.