基于SIP的IMS安全分析研究

文中详细分析了SIP协议的常见漏洞和IMS的安全机制,并以此为基础分析研究了在IMS中应用SIP协议的漏洞实施攻击的可行性.从分析结果可以看出,IMS的安全机制能够拒绝除了DOS攻击之外的所有的基于SIP漏洞的攻击.最后对DOS攻击进行了仿真验证.     

IMS网络端到端安全机制的研究

IMS（IP多媒体子系统）是3G系统核心网（CN）的一部分,核心特点是采用SIP协议和与接入方式的无关性。文章首先分析了IMS系统中存在的安全问题,并阐述了IMS的接入安全和网络域安全。端到端（或用户到用户）的安全可以被认为是一种更安全的机制,因为只有两个实体可被攻击,可以采用基于口令的跨服务器认证密钥交换协议来实现。     

Volte网络下的SIP攻击检测和分析

为满足中国移动语音业务需求,中国移动进行Volte(Voice over LTE)商用网络建设,Volte使用SIP协议的IMS网络(IP multimedia subsystem).IMS网络的引入将电信运营商进入到互联网时代,互联网典型的洪泛攻击也将成为IMS中不可忽视的威胁之一.本文讨论IMS网络中的SIP安全性问题,分析SIP攻击并提出如何取检测这种攻击.     

SIP安全威胁及安全机制分析

会话初始化协议(SIP)是近年来的研究热点.SlP的安全问题一直是SIP应用的主要问题之一.首先分析了SIP面临的安全威协.指出要保证SIP安全性需要保证信息的机密性和完整性,提供UA和Server验证机制防止DoS攻击.此外分析了SIP安全机制,指出了SIP安全机制的不足.     

P2P-SIP安全认证机制研究

会话初始协议（SIP）是VoIP在3GPP中的标准协议,也是3GPP的多媒体子系统（IMS）的重要组成部分。传统的SIP通信都是基于C/S模式,因此能够将VoIP技术与P2P结合无疑是一种新的尝试。面对复杂、开放的因特网环境,P2P和SIP的结合,带来了新的安全隐患,P2P-SIP的安全性有待进一步改进和提高。文章首先分析了P2P-SIP面临的注册攻击和拆卸会话攻击这两种安全威胁,接着又提出了相应的安全解决方案：基于网络层模型的安全机制,检测网络层的状态,用于判定是否有Attacker攻击,以及基于TLS的注册流程,面向连接的传输层安全服务。     

基于IMS网络拓扑隐藏机制的加密算法的研究

IMS是3G系统中核心网的一部分,它通过会话初始协议SIP发起会话。IMS是基于IP的网络,由于IP网络的漏洞和缺陷,基于IMS的下一代网络存在潜在的安全问题。拓扑隐藏机制可以通过加密SIP消息中的一些内部地址和其他网络信息达到隐藏的目的。本文将就IMS安全中的拓扑隐藏机制及其AES-CBC模式的加密算法进行研究。     

统一IMS业务实现的关键技术

介绍了统一IMS系统中的业务功能架构，并以Presence业务引擎为例介绍基于SIP协议实现业务时的业务引擎，然后分析IMS系统中SIP协议的特点，并简单描述了基于SIP AS的业务实现流程，最后分析了统一IMS业务实现的技术难点并展望了统一IMS业务的美好未来。     

改进的HTTP摘要认证方案的设计与实现

由于现有的认证机制不能有效解决会话初始协议(SIP)消息传送时网络侦听的问题,因此SIP网络传输时存在易遭受异常消息攻击、数据包被侦听、密文被分析等诸多安全威胁.文章经比较分析、研究改进,应用一个并行多进程的SIP非法消息检测流程,扩展了SIP认证头域,引进了密文隐写系统,能有效保证应用层的安全.实验结果验证了该方案的有效性.     

SIP注册劫持攻击及安全机制研究

SIP协议是会话初始协议,因为其自身和应用环境的特点面临着许多安全威胁。论文针对其中一种主要安全威胁—注册劫持,用两种方法实现此种攻击,并实验对带有摘要认证的SIP的注册劫持攻击,最后提出防范注册劫持攻击的安全机制。     

UMTS中IP多媒体子系统体系结构

为提供基于IP的传统语音业务和其他新型移动多媒体业务，UMTS R5版本中引入IP多媒体子系统（IMS）。在介绍IMS的体系框架、网元和接口模型的基础上，详细论述了IMS多媒体会话中的SIP信令流程，并针对IMS的Qos问题、安全机制和业务模型进行了分析。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.