Effect of electron traps on long afterglow behavior of Sr3Al2O6:Eu0.012+,Dy0.02-x3+,Hox3+

The long persistent phosphors Sr3Al2O6:Eu0.012+,Dy0.02-x3+,Hox3+ (x=0, 0.01, 0.02) were prepared by a high temperature solid state reaction. All samples showed a broad band emission peaking at ~510 nm, which could be ascribed to Eu2+ transition between 4f65d1 and 4f7 electron configurations. With the increase of substitution of Ho3+ ions for the Dy3+ ions in the as-prepared phosphors Sr3Al2O6:Eu0.012+,Dy0.02-x3+,Hox3+ (x=0, 0.01, 0.02), the initial intensity of the afterglow obviously decreased. From the thermoluminescence (TL) curves of the samples, we concluded that codoped Ho3+ ions led to a decline of the trap depth and redistribution of the trap. This may be responsible for the change of afterglow of Sr3Al2O6:Eu0.012+,Dy0.02-x3+,Hox3+ (x=0, 0.01, 0.02).     

Properties of red-emitting phosphors Sr2MgSi2O7:Eu3+ prepared by gel-combustion method assisted by microwave

Novel red-emitting phosphors Sr2MgSi2O7:Eu3+ were prepared by gel-combustion method assisted by microwave. The phase struc-ture and luminescent properties of as-synthesized phosphors were investigated by XRD and fluorescence spectrophotometer, respectively. The results showed that the as-synthesized sample was Sr2MgSi2O7 with tetragonal crystal structure. The excitation spectrum of Sr2MgSi2O7:Eu3+ was composed of two major parts: one was the broad band between 200 and 350 nm, which belonged to the charge transfer of Eu3+-O2-; the other consisted of a series of sharp lines between 350 and 450 nm, ascribed to the f-f transition of Eu3+. The emission spec-trum consisted of two emission peaks at 593 and 616 nm, which was attributed to 5D0→7F1 and 5D0→7F2 of Eu3+, respectively. The concen-tration of Eu3+ (x) had great effect on the emission intensity of Sr2-xMgSi2O7:Eu3+x. When x varied in the range of 0.04-0.18, the intensity of emission peaks at 593 and 616 nm increased gradually with the concentration of Eu3+ increasing. It was interesting that no concentration quenching occurred. Moreover, the luminescent intensity could be greatly enhanced with incorporation of charge compensator Li+ ions.     

Enhancement of photoluminescence of Ba2SiO4：Eu^2＋ by co-doping of La^3＋ or Y^3＋

Green light-emitting Ba2SiO4:Eu2+ phosphors co-doped with La or Y were synthesized by conventional solid-state reaction technique in reductive atmosphere (a mixture of 5% H2 and 95% N2). The results showed that the co-doping of La and Y could greatly enhance the fluorescence intensity of Ba2SiO4:Eu2+ phosphors. The optimum doping concentration expressed by the x value in (Ba0.985-1.5xREx)2SiO4: 0.03Eu2+ (RE=La or Y) was determined to be of 0.05. The excitation and emission peaks of all as-synthesized phosphors were wide bands. The excitation bands ranged from 250 to 400 nm, which matched well with the wavelength of near ultraviolet white light-emitting diodes (LED) chip and could be used as a potential candidate for the fabrication of white LED. The emission bands from 450 to 550 nm were typical 5d-4f transition emission of Eu2+ and displayed un-symmetry profiles because of the two substitution sites of Ba2+ with Eu2+.     

Luminescent properties of SrSi2N2O2:Ce3+,Tb3+-a potential phosphor for white light emitting diodes

Ce3+ and Tb3+ co-doped SrSi2N2O2 phosphors were prepared by solid-state reaction. The X-ray diffraction pattern exhibited that the phosphor consisted mainly of oxygen-rich SrSi2N2O2. The optical properties of SrSi2N2O2:Ce3+, SrSi2N2O2:Tb3+ and SrSi2N2O2:Ce3+,Tb3+ were studied, respectively. The emission intensity of Tb3+ at 541 nm was remarkably enhanced by Ce3+ in SrSi2N2O2:Ce3+,Tb3+ phosphor, which was attributed to the energy transfer from Ce3+ to Tb3+. The chromaticity coordinates of phosphors were investigated as a function of Tb3+ concentration. When the Ce3+ and Tb3+ concentrations were 0.02 and 0.18 mol per formula unit, respectively, the chromaticity coordinate was (0.257, 0.337) in the CIE 1931 chromaticity diagram. SrSi2N2O2Ce3+,Tb3+ phosphors could be used for white light emitting diodes.     

Luminescence studies of MBrCl： Eu2＋ （M=Ca, Sr, Ba）

Europium doped MBrCl (M=Ca, Sr, and Ba) phosphors were prepared by solid state reaction in reductive atmosphere. Photolu-minescence (PL), photostimulated luminescence (PSL) after X-ray irradiation and optical absorption studies of MBrCl:Eu2+ (M=Ca, Sr, and Ba) revealed that: (1) blue light emission, under the excitation of 300 nm, was observed in all these phosphors; (2) the shape of the emission spectra in CaBrCl:Eu2+ could be changed by varying the bromine/chlorine ratio during synthesis, while that in SrBrCl:Eu2+ and BaBrCl:Eu2+ showed no change; and (3) PSL was observed in SrBrCl:Eu2+ and BaBrCI:Eu2+ after X-ray irradiation. Difference absorption spectrum (DAS) in SrBrCl:Eu2+ showed two broad bands centered at about 470 and 570 nm, and DAS in BaBrCI:Eu2+ showed two bands at about 550 and 675 nm, respectively. This enabled the use of He-Ne laser (633 nm) or even semiconductor light-emitting diodes (LED) instead of gas lasers for photostimulation.     

Luminescent properties of red phosphors K2Ba（MoO4）2：Eu3＋ for white light emitting diodes

K2Ba(MoO4)2:Eu3+ phosphors were synthesized by solid-state reaction. The emission and excitation spectra of K2 Ba(MoO4)2:Eu3+ phosphors exhibited that the phosphors could be effectively excited by near ultraviolet (394 nm) and blue (465 nm) light, and emitted red light at 616 nm. The influence of Eu3+concentration, sintering temperature and charge compensators (K+, Na+ or Li+ ) on the emission intensity were investigated. The results indicated that concentration quenching of Eu3+ was not observed within 30mol.% Eu 3+, 600 oC was a suitable sintering temperature for preparation of K2 Ba(MoO4)2:Eu3+phosphors, and K+ ions gave the best improvement to enhance the emission intensity. The CIE chromaticity coordinates of K2 Ba(MoO4)2:0.05Eu3+phosphor were calculated to be (0.68, 0.32), and color purity was 97.4%.     

Photoluminescence properties of M2ZnSi2O7:Eu2+（M=Sr,Ba）

The hardystonite phosphors of Eu2+ activated M2ZnSi2O7(M=Sr,Ba) were synthesized by combustion-assisted method.They were systematically characterized by photoluminescence excitation and emission spectra.The emission spectra of these two phosphors showed that the main emission peaks are at 475 and 503 nm due to 4f65d1→4f7 transition of Eu2+.Both phosphors could be efficiently excited in the wavelength range of 250-425 nm where the near ultraviolet light-emitting diode was well matched.The(x,y) color coordinates were determined with the emission values(x,y)=(0.41,0.21) and(0.16,0.45) for the M2ZnSi2O7:Eu2+(M=Sr,Ba) phosphors.     

Luminescent properties of MMgP_2O_7：Eu~（3＋）（M=Ca,Sr,Ba） phosphor

A series of red phosphors Eu3+-doped MMgP2O7(M=Ca,Sr,Ba) were synthesized by solid-state reaction method.X-ray powder diffraction(XRD) analysis confirmed the formation of pure CaMgP2O7,SrMgP2O7 and BaMgP2O7 phase.Photoluminescence spectra of MMgP2O7(M=Ca,Sr,Ba):Eu3+ phosphors showed a strong excitation peak at around 400 nm,which was coupled with the characteristic emission(350-400 nm) from UV light-emitting diode.The CaMgP2O7:Eu3+,SrMgP2O7:Eu3+ and BaMgP2O7:Eu3+ phosphors showed strong emission bands peaking at 612,593 and 587 nm,respectively.Due to the difference of the ion sizes between Ba2+(0.142 nm),Sr2+(0.126 nm),Ca2+(0.112 nm),Mg2+(0.072 nm) and Eu3+(0.107 nm),Eu3+ ions were expected to substitute for different sites in CaMgP2O7,SrMgP2O7 and BaMgP2O7 lattice.     

Intense blue-emitting Ca₂PO₄Cl:Eu²⁺ phosphor for near-ultraviolet converting white light-emitting diodes

A blue phosphor Ca2PO4Cl:Eu2+(CAP:Eu2+) was synthesized by solid state reaction.The Ca2PO4Cl:Eu2+ exhibited high quantum efficiency and excellent thermal stability.The luminescent intensity of Ca2PO4Cl:Eu2+ was found to be 128% under excitation at 380 nm,149% under 400 nm,and 247% under 420 nm as high as that of BaMgAl10O17:Eu2+.The optimal doping concentration was observed to 11 mol.% of CAP:Eu2+.The energy transfer between Eu2+ ions in CAP were occurred via electric multipolar interaction,and the critical transfer distance was estimated to be 1.26 nm.A mixture of blue-emitting Ca2PO4Cl:Eu2+,green-emitting(Ba,Sr)2SiO4:Eu2+ and red-emitting CaAlSiN3:Eu2+ phosphors were selected in conjunction with 400 nm chip to fabricate white LED devices.The average color-rendering index Ra and correlated color temperature(Tc) of the white LEDs were found to be 93.4 and 4590 K,respectively.The results indicated that it was a promising candidate as a blue-emitting phosphor for the near-UV white light-emitting diodes.     

阳离子引入对CsPF6:Mn4+红色荧光粉发光性能的影响

采用共沉淀法在室温条件下合成了CsPF₆:Mn4+荧光粉,研究了Li+、Na+、K+阳离子的引入对CsPF₆:Mn4+荧光粉发光强度的影响。所制备的系列荧光粉样品均为立方结构纯相。在蓝光激发下,呈现最强峰位于634 nm处的一系列窄带红色发射。加入K+和Li+后,发光强度增强,加入Na+后发光强度有所减弱,其中加入K+的CsPF₆:Mn4+荧光粉发光强度最强。CsPF₆:Mn4+, K+荧光粉的发射强度随着温度的上升先增强然后由于非辐射跃迁的增加而降低,在423 K时达到最大值,发射强度相较于未引入阳离子的荧光粉发射强度亦增强。阳离子的引入可以有效提升CsPF₆:Mn4+荧光粉的发光性能。      

Preparation and luminescence properties of the red-emitting phosphor（Sr1-xCax）2Si5N8：Eu^2＋ with different Sr/Ca ratios

A series of Eu2+-doped ternary nitride phosphors, with a formula of (Sr1-xCax)2Si5N8: Eu2+, were synthesized by high-temperature solid-state method. The structure and luminescence properties were characterized, indicating the potential application as a red phosphor in the phosphor-converted white light-emitting diodes. The X-ray diffraction patterns showed that the Sr2Si5N8 and Ca2Si5N8 phases were generated at each end of (Sr1-xCax)2Si5N8: Eu2+ and coexisted in the range of 0.5≤x≤0.75. The emission spectra showed broad emission bands originating from the 4f65d1→4f7 transition of Eu2+ ions. The emission peak changed with the variations in Ca2+ concentration.     

Enhancement of luminescence and afterglow in Ca0.8Zn0.2TiO3:Pr3+ by Nb5+ substitution for Ti4+

Nb5+ doped Ca0.8Zn0.2TiO3:Pr3+ red long afterglow phosphors were synthesized by solid-state reaction methods. X-ray diffraction, photoluminescence spectroscopy and thermally stimulated spectrometry were used to investigate the effects of Nb5+ content on the crystal characteristics and luminescent properties of Ca0.8Zn0.2Ti1-xNbxO3:Pr3+ phosphors. The results showed that the addition of a small quantity of Nb5+ had negligible effect on the crystal characteristics of Ca0.8Zn0.2Ti1-xNbxO3:Pr3+, but it could change the trapping parameters (the depth of trap, frequency factors and the concentration of trapped charges at t=0) of Ca0.8Zn0.2Ti1-xNbxO3:Pr3+ phosphors, and then led to the enhance-ment of red fluorescence and phosphorescence at 612 nm originating from 1D2→3H4 transition of Pr3+. Both of the red fluorescence intensity and afterglow time reached the largest values in the sample of Ca0.8Zn0.2Ti1-xNbxO3:Pr3+ with x=0.05. The afterglow time of Ca0.8Zn0.2Ti0.95Nb0.05O3:Pr3+ phosphors lasted for over 24 min (≥1 mcd/m2) when the excited source was cut off.     

Effect of gadolinium incorporation on optical characteristics of YNbO_4：Eu~（3＋） phosphors for lamp applications

Eu3+-doped (Y,Gd)NbO4 phosphor was synthesized by solid-state reaction for possible application in cold cathode fluorescent lamps. A broad absorption band with peak maximum at 272 nm was observed which was due to the charge transfer between Eu3+ ions and neighboring oxygen anions. A deep red emission at the peak wavelength of 612 nm was observed which could be attributed to the 5D0→7F2 transition in Eu3+ ions. The highest luminance for Y1-x-yGdyNbO4:Eux3+ under 254 nm excitation was achieved at Eu3+ concentration of 18 mol.% (x=0.18) and Gd3+ concentration of 8.2 mol.% (y=0.082). The luminance of Y0.738Gd0.082NbO4:Eu3+0.18 was higher than that of a typical commercial phosphor Y2O3:Eu3+ and the CIE chromaticity coordinate was (0.6490, 0.3506), which was deeper than that of Y2O3:Eu3+. The particle size of the synthesized phosphors was controlled by the NaCl flux and particle size as high as 8 μm with uniform size distribution of particles was obtained.     

Synthesis of Long Afterglow Phosphors MAl2O4:Eu2+, Dy3+(M=Ca, Sr, Ba) by Microemulsion Method and Their Luminescent Properties

Long afterglow phosphors MAl2O4:Eu2 , Dy3 (M=Ca, Sr, Ba) were synthesized by microemulsion method, and their crystal structure and luminescent properties were compared and investigated. XRD patterns of samples indicate that phosphors CaAl2O4:Eu2 , Dy3 and SrAl2O4:Eu2 , Dy3 are with monoclinic crystal structure and phosphor BaAl2O4:Eu2 , Dy3 is with hexagonal crystal structure. The wide range of excitation spectrum of phosphors MAl2O4:Eu2 , Dy3 (M=Ca,Sr,Ba) indicates that the luminescent materials can be excited by light from ultraviolet ray to visible light and the maximum emission wavelength of phosphors MAl2O4:Eu2 , Dy3 (M=Ca, Sr, Ba) is found mainly at λem of 440 nm (M=Ca), 520 nm (M=Sr) and 496 nm (M=Ba) respectively, the corresponding colors of emission light are blue, green and cyna-green respectively. The afterglow decay tendency of phosphors can be summarized as three processes: initial rapid decay, intermediate transitional decay and very long slow decay. Afterglow decay curves coincide with formula I=At-n, and the sequence of afterglow intensity and time is Sr＞Ca＞Ba.     

溶胶-凝胶法制备Sr2SiO4:Tb3+绿色荧光粉及其发光性能

采用溶胶-凝胶法合成了一系列适合紫外-近紫外激发的(1-X)Sr₂SiO₄:XTb3+(X=0,0.01,0.02,0.03,0.04,0.05,0.06)绿色荧光粉,并采用X射线衍射(XRD)、扫描电子显微镜(SEM)和荧光光谱(PL)研究了样品的结构及发光性能.由XRD的检测结果可知,合成样品属于单斜晶系的β-Sr₂SiO₄相.由SEM图可知,所有样品都呈无规则块状结构.当监测波长为546 nm,样品的激发光谱的主峰位于370 nm处,属于Tb3+的4f-4f特征跃迁吸收.当激发波长分别为285 nm和250 nm,所有样品在488 nm,547 nm,586 nm,623 nm处都出现了1个强发射峰,分别对应Tb3+的5D₄→7F₆、5D₄→7F₅、5D₄→7F₄和5D₄→7F₃电子跃迁.最强发射峰位于547 nm处,呈现特征为绿光发射.随Tb3+掺杂量增大,发射强度呈现出先增大后减小的变化趋势,即存在浓度猝灭效应.当Tb3+掺杂量为X=0.03时,样品的发光强度最大.      

Effects of Sr²⁺ on structure and luminescent properties of BaAl₁₂O₁₉:Eu phosphors

Ba0.9-ySryAl12O19:Eu0.1 phosphors were prepared by sol-gel technique,the crystalline structures of samples characterized by XRD,and the luminescence properties were investigated.The influence of crystallographic positions on the luminescent properties of Sr2+-doped BaAl12O19:Eu was investigated in detail.The results indicated that the crystal lattice of BaAl12O19:Eu was not influenced by the Sr2+ and doping Sr2+ in BaAl12O19:Eu enhanced the luminescent properties of the phosphors at the proper concentration of Sr2+.With the increasing of concentration of Sr2+ doped in BaAl12O19:Eu,the relative luminescent intensity of Ba0.9-ySryAl12O19:Eu0.1 strengthened and blue-shifted.     

Y2MgTiO6:Mn4+/Nd3+的制备及近红外发光性能

采用传统的高温固相反应制备了一系列Y₂MgTiO₆:Mn4+/Nd3+下转换材料。利用稳态激发发射光谱以及瞬态荧光寿命等进行了分析, 在Mn4+→Nd3+能量传递过程中, 在331 nm激发下Nd3+产生885 nm和1 085 nm的红外发射对应于4F_3/2→4I_11/2与4F_3/2→4I_9/2能级跃迁。研究结果证实, 双掺Mn4+/Nd3+的Y₂MgTiO₆在1 085 nm荧光强度比其单掺Nd3+的Y₂MgTiO₆增强了5倍。还进一步阐释了Mn4+→Nd3+能量传递主要是共振能量传递的偶极-偶极机制。近红外发光的下转换材料Y₂MgTiO₆:Mn4+/Nd3+对晶体硅太阳能电池的荧光转换层具有很好的应用价值。      

Effects of Eu3+ and Dy3+ doping or co-doping on optical and structural properties of BaB2Si2O8 phosphor for white LED applications

A series of Eu3+ and Dy3+ doped/co-doped as well as un-doped BaB2Si2O8 phosphors were synthesized via solid state reaction method. The PL result showed typical blue and green emission from Dy3+ and red emission from Eu3+. The f-f transitions involving the lanthanide ions along with dopant site occupancy were discussed thoroughly. Phonon assisted energy transfer process was observed from Eu3+ to Dy3+, which enhanced the emissions of Dy3+. Combinations of the emissions from Eu3+ and Dy3+ showed a possible white to red tuneable emission on the CIE diagram. The white warmth emissions of the phosphor were revealed to be adjustable through designing the dopant concentration and excitation wavelengths. An unusual energy transfer that originated from Eu3+ to Dy3+ was also discovered and the energy transfer mechanism was discussed. Proposed energy transfer mechanism was investigated using luminescence decay lifetime. All the phosphor exhibited efficient excitation in the UV range which matched well with the emissions from Ga N-based LED chips. This presented the Ba B2Si2O8 phosphor as a promising candidate for white LED applications. The effects of doping on the structural properties and the optical band gap of Ba B2Si2O8 phosphor were also discussed in this study.     

Luminescence properties of Mn2） ions doped Lu2CaMg2Si3O1） garnet phosphors

Yttrium aluminum garnet structure phosphors Lu2CaMg2Si3O12:Mn2+ were synthesized by conventional high temperature solid-state reaction in reductive atmosphere. The structure and optical properties of samples were characterized by application of powder X-ray diffraction (XRD) and photoluminescence spectroscopy. Results of X-ray diffraction (XRD) analysis showed that the phosphors mainly presented garnet structure with a few weak peaks of impurity phases. Lu2-xCaMg2Si3O12:xMn2+ (x=0.01-0.8) phosphors showed a broad emission band peaking at around 590 nm under ultraviolet (UV) light of 408 nm when Mn2+ concentration was less than 0.08 mol. With an increase in the Mn2+ concentration (above 0.08), another broad emission band peaking at 720 nm besides 590 nm was observed, which may be due to manganese ion having different valence and occupying different host lattice. The critical quenching concentrations of manganese ion in the wavelength of 590 and 720 nm were about 0.06 and 0.2 mol, respectively. With 408 nm excitation wavelength, emission color of the samples had a red shift trend as the Mn2+ concentration increased. All the results indicated that the Lu2CaMg2Si3O12:Mn2+ phosphors could be applicable to n-UV based white LEDs.     

Photoluminescent properties of Sr2SiO4:Eu3+ and Sr2SiO4:Eu2+ phosphors prepared by solid-state reaction method

Eu2+ and (or) Eu3+ doped Sr2SiO4 phosphors particles were synthesized by a conventional solid-state reaction technique, and their structural and optical properties were investigated. The X-ray diffraction (XRD) results showed that the obtained phosphors were composed of orthorhombic α'-Sr2SiO4 and monoclinic β-Sr2SiO4 phase. When excited under 256 nm, Sr2SiO4:Eu3+ phosphors showed intense emission in the red region. Sr2SiO4:Eu3+ phosphors exhibited white emissions (x=0.30, y=0.40, TC=6500 K) ranging from 425 to 650 nm when it was excited by near-ultraviolet (near-UV) light, indicating that Sr2SiO4:Eu2+ was a good light-conversion phosphor candidate for near-UV chip.