NKLNx-KBT-BZ无铅压电陶瓷的电性能研究

采用传统固相烧结法制备0.92(Na0.51K0.49-xLix)NbO3-0.02K0.5Bi0.5TiO3-0.06BaZrO3(简写为NKLNx-KBT-BZ,x=0.00～0.05)系无铅压电陶瓷.用X射线衍射仪、扫描电子显微镜、精密阻抗分析仪及铁电性能测试仪等研究了Li+含量对该体系陶瓷的晶相、显微结构和电性能的影响.结果表明:在研究组成范围内,陶瓷均具有单一的钙钛矿结构,随着Li+含量的增加,晶体结构从菱方转变为四方结构,并且经过菱方-四方两相共存的准同型相界(MPB)组成区域0.01 ＜x ＜0.03.在MPB区域的四方相边界x=0.03处获得优异的电性能:d33=227 pC/N,kp=39.3;,Qm=69,εT33/ε0=1642,tanδ =2;,Pr=13.3μC/cm2,Ec=1.64 kV/mm.     

BNT-BKT-BiFeO3无铅压电陶瓷的压电性能和退极化温度

采用传统陶瓷制备方法,制备了系列新型无铅压电陶瓷材料(1-x-y)Bi0.5Na0.5TiO3-xBi0.5K0.5TiO3-yBiFeO3(简写为BNT-BKT-BF-x/y).研究了该体系陶瓷微观结构、压电性能和退极化温度变化规律.结果表明:在所研究的组成范围内,所制备的材料均能够形成纯钙钛矿固溶体,陶瓷三方、四方共存的准同型相界(MPB)成分为x=0.18～0.21,y=0～0.05,在准同型相界成分附近该体系陶瓷压电性能达到最大值:d33=171pC/N,kp=0.366.采用平面机电耦合系数kp和极化相位角θmax与温度的关系来确定退极化温度,得到的结果基本相同,陶瓷的退极化温度随BF含量的增加一直降低,随BKT含量的增加先降低后升高.     

溶胶-凝胶法制备Na0.5Bi0.5TiO3-K0.5Bi0.5TiO3体系无铅压电陶瓷的研究

采用溶胶-凝胶法制备(1-x)Na0.5Bi0.5 TiO3-xK0.5Bi0.5TiO3体系无铅压电陶瓷.XRD分析表明,用溶胶-凝胶法可以在650℃下合成具有钙钛矿结构的(1-x)Na0.5Bi0.5TiO3-xK0.5Bi0.5TiO3粉体,且在x=0.18～0.30之间存在三方-四方准同型相界(MPB).陶瓷的压电性能参数表明,该体系在MPB组成范围内具有最佳的压电性能:x=0.30时,压电常数d33达到最大值(d33=150 Pc·N-1),平面机电耦合系数kp与介电常数εH33T/ε0均在x=0.26时达到最大值,分别为36.7;和1107.     

CeO2掺杂KNN-LiNbO3无铅压电陶瓷的压电与介电性能研究

采用传统固相烧结法制备了0.98K0.5Na0.5NbO3-0.02LiNbO3-xCeO2(0.98KNN-0.02LN+xCeO2)无铅压电陶瓷.研究了不同CeO2掺杂含量(x=0、0.01、0.02、0.03、0.04)对0.98KNN-0.02LN陶瓷显微结构和电学性能的影响.研究结果表明:当CeO2掺杂含量从x=0.00到x=0.01和从x=0.02到x=0.03时,样品出现了正交-四方相转变.当x=0.00和x=0.02时,样品都处于正交与四方两相共存状态.CeO2少量掺杂时Ce4+完全进入晶格,表现为"受主"掺杂的特性;而大量CeO2掺杂时,有杂相的生成,主要起到烧结助剂的作用.样品在1080℃下烧结,当掺杂含量为x=0.02时取得最佳的综合性能:d33=104pC/N,Qm=2201,kp=0.24423,εr=804.2,tanδ=8.748;.     

Sb掺杂K0.5Na0.5NbO3无铅压电陶瓷相结构和电学性能的研究

采用传统固相烧结法,在1060 ℃制备(K0.5Na0.5)Nb1-xSbxO3(KNNS,x=0、0.01、0.02、0.03和0.04)无铅压电陶瓷,研究了Sb掺杂对KNN陶瓷物相结构、微观形貌和电学性能的影响.研究结果表明:Sb可以取代钙钛矿结构中B位的Nb位置,Sb取代Nb的最大量为0.03≤x≤0.04,当x=0.04时产生杂相;通过XRD图谱分析表明,x=0时陶瓷为单一的正交相结构,0.02≤x≤0.03时为正交-四方相共存,x=0.04时转变为三方相结构.Sb的掺杂具有细化晶粒的作用,随着Sb含量的增加,晶粒平均尺寸减小,晶粒大小变得均匀,介电性能增强.     

稀土掺杂Pb(Mg1/3Nb2/3)O3-PbTiO3压电陶瓷的烧结特性研究

在传统的固相反应制备工艺中,固相反应的烧结温度直接影响着陶瓷的物相结构、陶瓷致密度以及介电性能等.本文采用固相反应法制备x; Sm3掺杂PMN-PT压电陶瓷,通过控制不同的烧结温度,制备了一系列Sm-PMNPT陶瓷样品.利用X射线衍射仪、介电温谱以及准静态d33测量仪对陶瓷结构、介电性能、压电系数等性能进行表征.研究结果表明:烧结温度在1250℃,x=1.875mol;～2.5mol;,陶瓷样品的钙钛矿含量最大,压电系数最高可达1254 pC/N,kp=0.58,相对介电常数高达30000左右,密度达到8.48 g/cm3.     

(1-x)(K0.49Na0.51)(Nb0.97Ta0.03)O3-xBi0.5Na0.5ZrO3无铅压电陶瓷的结构与电性能研究

采用固相法制备了(1-x)(K0.49Na0.51)(Nb0.97 Ta0.03) O3-xBi0.5 Na0.5 ZrO3(KNNT-BNZ,x=0,0.01,0.02,0.03,0.04,0.05)无铅压电陶瓷,研究了Bi0.5 Na0.5ZrO3 (BNZ)的掺杂量对KNNT-BNZ陶瓷相结构、微观结构和电性能的影响.结果表明:KNNT-BNZ陶瓷具有纯的钙钛矿结构,随着BNZ掺杂量x的增加,陶瓷从正交相转变为四方相,并在0.03≤x≤0.04出现正交-四方两相共存的多型相转变区域.在该多型相转变区域靠近四方相的边界x =0.04处,陶瓷具有优异的电性能:压电常数d33 =317 pC/N,机电耦合系数kP=36.4;,机械品质因数Qm=68,介电常数ε3T/ε0=1225,介电损耗tanδ =3.1;,剩余极化强度Pr=20.5 μC/cm2,矫顽场Ec=1.16 kV/mm,居里温度Tc=310℃.     

Sb掺杂对0.96(K0.49Na0.51)(Nb0.97-xTa0.03Sbx)O3-0.04Bi0.5(Na0.8K0.2)0.5ZrO3无铅压电陶瓷结构与电性能的影响研究

采用固相法制备了0.96(K0.49 Na0.51)(Nb0.97-xTa0.03Sbx) O3-0.04Bi0.5(Na0.8K0.2)0.5ZrO3(0.96KNNTSx-0.04BNKZ,x=0,0.01,0.02,0.03,0.04)无铅压电陶瓷,研究了Sb掺杂量对0.96KNNTSx-0.04BNKZ陶瓷相结构、微观结构和电性能的影响规律.X射线衍射(X-ray Diffraction,XRD)分析结果表明:0.96KNNTSx-0.04BNKZ陶瓷具有纯钙钛矿结构,随着Sb掺杂量x的增加,陶瓷由正交-四方两相共存逐渐转变为四方相,在x≤0.01时,陶瓷为正交-四方两相共存的多型相转变(Polymorphic Phase Transition,PPT)结构,而当x≥0.02时,陶瓷则转变为四方相结构.在PPT向四方相转变的组成边界x=0.02处,陶瓷具有优异的电性能:压电常数d33=345 pC/N,机电耦合系数kp=39.2;,机械品质因数Qm=51,介电常数ε33T/ε0=1520,介电损耗tanδ =2.7;,剩余极化强度Pr=15.4 μC/cm2,矫顽场Ec =1.09kV/mm,居里温度Tc=275℃.     

熔盐法制备高性能铌酸钾钠无铅压电陶瓷

用熔盐法合成铌酸钾钠(Na0.52K0.48NbO3,N52K48N)陶瓷粉体,用传统固相烧结工艺制备N52K48N陶瓷.研究了熔盐含量和烧结温度对N52K48N陶瓷粉体及其所制备陶瓷的相结构、微观形貌及电学性能的影响.结果发现,熔盐法在750℃就合成了单一钙钛矿结构的N52K48N陶瓷粉体;随熔盐含量增加,N52K48N陶瓷粉体粒径增大,粉体团聚现象明显减弱.当熔盐与反应物质量之比为1∶5,烧结温度T=1050℃时,所制备的N52K48N陶瓷具有优异的电学性能:压电常数d33=137 pC/N,机电耦合系数kp=32.6;,居里温度Tc=410℃,表明熔盐法是一种很有前途的铌酸钾钠陶瓷制备方法.     

BiMnO_3改性BNT-BKT压电陶瓷的研究

为了提高BNT基压电陶瓷的电性能,采用传统的陶瓷制备方法,制备了一种Bi基的钙钛矿型无铅压电陶瓷 (1-x)Bi_(0.5)(Na_(0.82)K_(0.18))_(0.5)TiO_3-xBiMnO_3 (简写为BNKT-BMx).研究了Bi基铁电体BiMnO_3对该体系陶瓷微观结构和压电介电性能的影响.结果表明:在所研究的组成范围内陶瓷材料均能够形成纯钙钛矿固溶体,微量BiMnO_3不改变该体系陶瓷的晶体结构,但促进晶粒生长.随着BiMnO_3含量增加,低温介电反常峰消失,高温介电峰出现频率分散性.随BiMnO_3含量增加,压电常数d_(33)和机电耦合系数k_p先增加后降低,在x=0.01时,k_p=0.333,x=0.015时,d_(33)=170 pC/N,为该体系陶瓷压电性能的最优值.     

具有准同型相界(MPB)组成的化合物(Sr1-x Bax)2NaNb5O15的晶体生长及性质研究

用Czochralski方法生长出铁电钨青铜型单晶(Sr1-xBax)2NaNb5O15(简称SBNN),晶体沿c轴方向生长.正交-四方相的准同型相界(简称为MPB)存在于x=0.45～0.50之间;SBNN晶体是不一致熔融的化合物,在晶体成长过程中,Sr2+的分凝系数比Ba2+的大,因此具有高浓度Ba2+的SBNN晶体很难生长.晶体的居里温度是243℃,在此温度下的相变是弥散的,随频率的增加,介电常数降低.     

Sr1+xSm1-xAl1-xTixO4微波陶瓷介电性能研究

以SrCO3,Sm12 O3,Al2O3,TiO2为原料,采用固相反应法制备了Sr1+xSm1-xAl1-xTixO4(x=0,0.1,0.2,0.3)陶瓷,研究了SrTiO3掺人量对其显微结构和微波介电性能的影响.结果表明:SrSmAlO4晶相中固溶SrTiO3,晶胞出现了明显的膨胀;SrSmAlO4陶瓷中固溶SrTiO3相,可降低其烧结温度和陶瓷烧结体的密度;SrSmAlO4陶瓷中固溶SrTiO3相后,可提高其介电常数和品质因素,但对其温频系数影响较小.在1420C/2 h烧结条件下,Sr1.2Sm0.8Al08Ti0 2 O4陶瓷微波介电性能达到:εr=28,Q×f=52600 GHz,τf=4 ppm/℃.     

Electrical and Optical Properties of Oriented (CH)x

We have measured the optical and electrical properties of both graphoepitaxially grown and shear-flow polymerized polyacetylene filmzs. The former show a pronounced optical anisotrop;y whereas the latter do not. This result is is correlated with the orientation of the chain axes relative to the fibra axes relative to the fibre axis, which is preferentially parallel in graphoepitaxially grown films. The electrical anisotropy was found to be rather weak. Optical measurements on doped (CH)_x indicate that both the characteristic IR modes at 0.11 eV and 0.17 eV and the mid-gap absorption around 0.5 eV, which have been attributed to solitonic defects, persist up to the metallic level. This result shows that both the IR modes and the mid-gap absorption are not necessarily signatures for solitonic defects. furthermore we conclude that the impurity potential is more effective than hitherto assumed.     

An effective growth method to improve the homogeneity of relaxor ferroelectric single crystal Pb(In1/2Nb1/2)O3‐ Pb(Mg1/3Nb2/3)O3‐PbTiO3

Compositional segregation usually has negative effects on the growth of solid solution ferroelectric single crystals of Pb(In_1/2Nb_1/2)O₃‐Pb(Mg_1/3Nb_2/3)O₃‐PbTiO₃ (abbr. PIN‐PMN‐PT or PIMNT). A modified Bridgman method was adopted in this work to control the segregation and improve the compositional homogeneity significantly. The characteristic of this work is to use multiround growths and gradient composition raw materials in order to keep the PbTiO₃ concentration constant during the crystal growth. As an example, the two‐round growth of ternary PIN‐PMN‐PT single crystal is conducted in the same Pt crucible with gradient raw materials, where the first‐round boule was used as the seed crystal for the second‐round growth. Our results show that the as‐grown (Ф80 mm × 270 mm) PIN‐PMN‐PT crystals exhibit higher phase transition temperatures (T_c∼180 °C, T_r/t∼110 °C) and larger coercive field (E_c∼5–5.5 kV/cm), which are much better than the performances of Pb(Mg_1/3Nb_2/3)O₃‐PbTiO₃ crystals, and similar dielectric and piezoelectric performances (ε∼5000, tanδ∼1.25%, d₃₃∼1500 pC/N, k_t∼60%). And about 85 percent of the crystal boule grown by the two‐round growth technique could maintain its compositions around the morphotropic phase boundary.     

Pb(Mg1/3Nb2/3)O3-0.33PbTiO3晶体三方相的压电性能研究

以坐标系二次旋转为理论基础研究了PMN-0.33PT晶体三方相的常用压电模量d15、d24、d31、d33、d36和机电耦合系数k15、k24、k31、k33、k36在三维空间的变化规律.通过MATLAB编程求得以上各系数关于坐标系旋转角度的函数表达式,绘制出了它们的三维空间分布图,并一一求得这些系数的最大值,以及与最大值相对应的旋转角.发现除d33和k33外,d31、d36、k31和k36也在空间变化显著.d31和k31旋转后的最大值比原坐标系下的数值分别扩大了15倍和6倍,对应的旋转角分别为(-4.5°/90°)、(22.5°/270°).d36 和k36在原坐标系下不存在,经旋转后的最大值可分别达到1340 pC/N 和0.73.该研究结果对PMN-0.33PT晶体在压电传感器、换能器中的应用具有重要的理论价值.     

Electrical and dielectric behavior of the system Gd1‐xBaxCoO3 (x = 0.00, 0.10, 0.20) synthesized by chemical route

The samples in the system Gd_1‐xBa_xCoO₃ (x = 0.00, 0.10, 0.20) were prepared by chemical route. These samples form single‐phase materials, which were confirmed by XRD and TGA studies. The presence of interfacial polarization is responsible for high value of dielectric constant in these materials. The conductivity observed in Gd_1‐xBa_xCoO₃ system may be due to mobile holes created by excitation of an electron from the π* band to an acceptor level.