共查询到18条相似文献,搜索用时 264 毫秒
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采用基于第一性原理密度泛函理论的平面波赝势方法,对0.5NdAlO3-0.5CaTiO3晶体进行结构优化,并对其能带结构,态密度和光学性质进行了理论计算.结构优化后晶格参数与实验数据相符合,误差小于1%;能带计算结果表明0.5NdAlO3-0.5CaTiO3为间接带隙,带隙值为0.52eV;费米面附近的能带由Nd-4f,O-2p,Nd-4p,Al-3p,Ti-4d层的电子态密度确定.同时也计算了该结构的介电函数,反射率和复折射率等光学性质. 相似文献
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稀土正铁氧体YFeO3呈正交钙钛矿结构,其晶体和纳米晶材料在电极材料、 传感器和光催化领域具有重要的应用价值.用平面波赝势方法,采用广义梯度近似、改进的Perdew-Burke-Emzerhof交换-关联势、 实空间超软赝势计算方案,研究了YFeO3晶体的几何结构、电子结构和光学性质. 计算得到的晶格参量与报道的实验结果一致.通过对能带结构、态密度、介电函数、吸收系数和光电导率的计算和分析, 确定YFeO3是直接能隙半导体,能隙Eg约为2.22 eV,阐明了YFeO3晶体和纳米晶具有较好的可见光催化性能. 相似文献
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本文计算了Heusler合金Li2AlGa和Li2AlIn的晶格参数、体积模量、体积模量的一阶导数、 电子能带结构、声子色散曲线和声子态密度,并与密度泛函理论中的广义梯度近似计算结果进行比较. 计算的晶格参数与文献有很好的一致性. 两个Heusler合金的电子能带结构表明它们是半金属结构. 并利用声子色散曲线和声子密度图研究Heusler合金晶格动力学. Li2AlGa和Li2AlIn Heusler合金在基态呈现动力学稳定. 相似文献
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采用基于密度泛函理论的第一性原理方法, 在广义梯度近似(GGA)和GGA+U方法下对尖晶石型LiMn2O4及其Al掺杂 的尖晶石型LiAl0.125Mn1.875O4晶体的结构和电子性质进行了计算. 结果表明: 采用GGA方法得到尖晶石型LiMn2O4是立方晶系结构, 其中的Mn离子为+3.5价, 无法解释它的Jahn-Teller 畸变. 给出的LiMn2O4能带结构特征也与实验结果不符. 而采用GGA+U方法得到在低温下的LiMn2O4和其掺杂 体系LiAl0.125Mn1.875O4的晶体都是正交结构, 与实验一致. 也能明确地确定Mn的两种价态Mn3+/Mn4+的分布并且能够说明Mn3+O6的z方向有明显的Jahn-Teller 畸变, 而Mn4+O6则没有畸变. LiMn2O4的能带结构与实验比较也能够符合. 采用GGA+U方法对Al掺杂体系的LiAl0.125Mn1.875O4的研究表明, 用Al替换一个Mn不会明显地改变晶体的电子性质, 但可以有效地消除Al3+O6 八面体的Jahn-Teller畸变, 从而改善正极材料LiMn2O4的性能, 这与电化学实验的观察结果相一致. 相似文献
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采用基于密度泛函理论的第一性原理方法对未掺杂以及不同浓度过渡金属Fe,Co,Ni,Zn掺杂金红石TiO2的超晶胞体系进行了几何优化,并讨论了其晶格常数,电子能带结构和光学性质.研究结果表明:掺杂前后的晶格参数与实验值偏差在3.6%以下;适量的过渡金属掺杂不但影响体系能带结构,拓宽光吸收范围,而且扮演着俘获电子的重要角色,有利于光生电子-空穴对的有效分离以及增强光吸收能力;Fe,Co,Ni,Zn最佳理论掺杂体系分别为Ti0.75Fe0.25O2,Ti0.75Co0.25O2,Ti0.75Ni0.25O2,Ti0.83Zn0.17O2;Fe,Co,Ni3d态分裂为t2g和eg态,分别贡献于价带高能级和导带低能级部分,促进了电子-空穴对的生成,从而可提高TiO2的光催化性能;Zn3d态电子成对填满轨道,不易被激发,故光催化活性无明显提高. 相似文献
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采用坩埚下降法生长了Yb: CaF2-SrF2晶体,测试了该晶体的吸收和荧光光谱 以及在不同温度下晶体的热扩散系数和热膨胀系数,并且计算了晶体的热膨胀系数以及在常温下的热导率. 采用对比的方法,对晶体的吸收光谱,荧光光谱,热学性能进行了分析.从吸收和荧光光谱结果表明: 在掺杂相对较高浓度的SrF2的混晶中, Yb3+吸收截面和发射截面比较大. Yb: CaF2-SrF2 (19%)晶体在1040 nm附近的发射截面比较大,光谱也比较宽. 这说明在掺杂相同浓度Yb时,混晶中CaF2, SrF2的比例不同,晶体的光谱性质不同, 主要原因是在混晶中晶体的无序度不同,晶体对称性降低,形成低对称光学中心. 从热扩散系数计算的热导率结果看出晶体具有比较好的热导率. 相似文献
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This study investigates the optical properties of selected metal oxides due to their high dielectric constants. The local-spin-density approximation plus Hubbard U (commonly called LDA+U) is used in a study of the structural, mechanical and optical properties of UO2. The inclusion of a Hubbard U correction to 5f electrons of uranium changes UO2 from a metal to an insulator and, therefore, has a dramatic effect on the localisation of the electron spin and charge density of uranium. However although the band gap can be reproduced using the effective U parameter, which is equal to 3.5 eV and optical properties were calculated in our previous work, it is difficult to calculate ionic contribution to the static dielectric constant within LDA+U formalism for this compound. It is shown in the present work that the electronic structures of both ceria and thoria exhibit similarities to urania within LDA or PBE functional implementations. Within this functional and linear response theory one can easily calculate static dielectric permittivity and it is shown that in agreement with experiment the predicted values are an order of magnitude larger than the dielectric constant of SiO2. In this work, high accuracy, first-principles calculations are also used to compare properties of urania versus ceria and thoria and how these similarities can help in understanding these compounds. It is also shown that the B3LYP functional predicts slightly overestimated band gaps for ceria and thoria as well as smaller than experimentally observed electronic contribution to the static dielectric constant, while the index of refraction is well reproduced for thoria. 相似文献
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Through first principles calculations, we investigated the electronic structure and lattice vibrational properties of BaHfO3. The optimized lattice constant of BaHfO3 is in agreement with experimental and theoretical results. Our results show that cubic BaHfO3 is an insulator with an indirect band gap of 3.5 eV. Besides, the calculation using the screened exchange local density approximation (sX-LDA) has been performed with the predicted minimum gap of 5.3 eV. The phonon dispersion curves of BaHfO3 were also calculated. All positive phonon frequencies in the Brillouin zone were found, indicating the stability of BaHfO3 structure. 相似文献
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Using quantum mechanics GASTEP software package based on the first principle density function theory, the electronic structure and optical properties of Ga1−xAlxAs at different Al constituent are calculated. Result shows that with the increase of Al constituent, the band gap of Ga1−xAlxAs increases and varies from direct band gap to indirect band gap; the absorption band edge and the absorption peak move to high-energy side; the static reflectivity decreases. With the increasing of the incident photon energy, Ga1−xAlxAs shows metal reflective properties in certain energy range. With the increasing of Al constituent, static dielectric constant decreases and the intersection of dielectric function and the x-axis move towards high-energy side; the peak of energy loss function move to low-energy side and the peak value reduces. 相似文献
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Suleyman Cabuk 《哲学杂志》2020,100(5):601-618
ABSTRACTBased on first principles computations, the structural, mechanical, electronic band structure, and optical properties of SeZnO3 compound have been predicted. The dependence of selected observables of SeZnO3 compound on the effective U (the Hubbard on-site Coulomb repulsion) parameter has been investigated in detail. The elastic constant, Young’s modulus, bulk modulus, shear modulus, Poisson ratio, anisotropic factor, acoustic velocity, and Debye temperature have been computed. The calculated electronic band structure and density of states indicate that SeZnO3 is a semiconductor material and has indirect band gap. The computations of the optical spectra, as a function of the incident photon radiation in 0–35?eV energy range has also been performed and the interband transitions are examined. The results indicate that Hubbard parameter plays a crucial role in explaining mechanical, electronic, and optical properties of SeZnO3. 相似文献
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The structure, electronic structure, elastic and optical properties of pure CaF2 and Eu:CaF2 are investigated by performing the generalized gradient approximation in the frame of density functional theory. The obtained lattice constant, band structure, elastic constants and imaginary part of dielectric function of pure CaF2 agree well with the experimental and other theoretical results. These properties of Eu:CaF2 are also calculated, and it follows that Eu doping leads to the crystal structure distorted, as well as the spin polarization of the system. Especially an impurity band is introduced in the bandgap, above the Fermi level, in the band structure of the Eu:CaF2, narrowing the bandgap. In addition, it is observed that the optical peaks of Eu:CaF2 shift towards the longer wavelength side, and the peak intensities drop compared with pure CaF2. Furthermore, Eu doping induces a series of new peaks in the optical properties, which is probably caused by the transitions of the 4f electrons of the Eu atoms. It is worth mentioning that the effect of pressure on the optical properties of Eu:CaF2 is also studied, we can hold that the optical peaks will have a blueshift. 相似文献
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用GULP程序拟合出α-Pu2O3的Pu-O作用BMH经验势参数.结合氧离子壳模型势,运用分子静力学和动力学计算出PuO2和α-Pu2O3理想晶体的结构参数和光学性质.结果显示:它们的空间群、晶胞参数、密度和熵等,与文献报道值接近,相对误差均小于1.2%;并计算出PuO2和α-Pu2O3的高频和静态介电张量、红外介电函数谱、晶格振动
关键词:
2')" href="#">PuO2
2O3')" href="#">α-Pu2O3
光学性质 相似文献
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采用基于密度泛函理论(DFT)的第一性原理平面波超软赝势(USPP)法, 在广义梯度近似(GGA)下计算了本征β-Ga2O3和Si掺杂β-Ga2O3的能带结构、电子态密度、差分电荷密度和光学特性. 在蓝宝石衬底(0001)晶面上用脉冲激光沉积(PLD)法制备了本征β-Ga2O3和Si掺杂β-Ga2O3薄膜, 测量了其吸收光谱和反射光
关键词:
第一性原理
超软赝势
密度泛函理论
2O3')" href="#">Si掺杂β-Ga2O3 相似文献
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The electronic density of states (DOS), band structure and optical properties of orthorhombic SbTaO4 are studied by first principles full potential-linearized augmented plane wave (FP-LAPW) method. The calculation is done in the framework of density functional theory with the exchange and correlation effects treated using generalized gradient approximation (GGA). We find an indirect band gap of 1.9 eV at the R→Γ symmetry direction of the Brillouin zone in SbTaO4. It is observed that there is a strong hybridization between Ta-5d and O-2p electronic states which is responsible for the electronic properties of the system. Using the projected DOS and band structure we have analyzed the interband contribution to the optical properties of SbTaO4. The real and imaginary parts of the dielectric function of SbTaO4 are calculated, which correspond to electronic transitions from the valence band to the conduction band. The band gap obtained is in close agreement with the experimental data. 相似文献