Piezoelectric properties of Pb(Mn1/3Nb2/3)O3–PbZrO3–PbTiO3 ceramics with sintering aid of 2CaO–Fe2O3 compound

Since the electromechanical devices move towards enhanced power density, high mechanical quality factor (Q_m) and electromechanical coupling factor (k_p) are commonly needed for the high powered piezoelectric transformer with Q_m≥2000 and k_p=0.60. Although Pb(Mn_1/3Nb_2/3)O₃–PbZrO₃–PbTiO₃ (PMnN–PZ–PT) ceramic system has potential for piezoelectric transformer application, further improvements of Q_m and k_p are needed. Addition of 2CaO–Fe₂O₃ has been proved to have many beneficial effects on Pb(Zr,Ti)O₃ ceramics. Therefore, 2CaO–Fe₂O₃ is used as additive in order to improve the piezoelectric properties in this study. The piezoelectric properties, density and microstructures of 0.07Pb(Mn_1/3Nb_2/3)O₃–0.468PbZrO₃–0.462PbTiO₃ (PMnN–PZ–PT) piezoelectric ceramics with 2CaO–Fe₂O₃ additive sintered at 1100 and 1250 °C have been studied. When sintering temperature is 1250 °C, Q_m has the maximum 2150 with 0.3 wt.% 2CaO–Fe₂O₃ addition. The k_p more than 0.6 is observed for samples sintered at 1100 °C. The addition of 2CaO–Fe₂O₃ can significantly enhance the densification of PMnN–PZ–PT ceramics when the sintering temperature is 1250 °C. The grain growth occurred with the amount of 2CaO–Fe₂O₃ at both sintering temperatures.     

Effect of sintering and poling conditions on the properties of 0·125Pb (Mg1/3Nb2/3)O3−0.875Pb(Zr0·5Ti0·5)O3 ceramics doped with 4PbO. B2O3

The influence of sintering and poling conditions on dielectric properties and microstructures of the system 0·125Pb(Mg_1/3Nb_2/3)O₃−0·875Pb (Zr_0·5Ti_0·5)O₃ was investigated. Specimens were prepared by the conventional mixed-oxide technique. On account of eliminating the pyrochlore phase and lowering the sintering temperature, the calcined 0·125PZT−0·875PMN ceramic was doped with 4PbO.B₂O₃ glass powder. The 4PbO.B₂O₃ glass frit not only has a low flow temperature, but also a high polarizability. Additions of 4PbO.B₂O₃ to the perovskite 0·125PMN–0·875PZT solid solution will form a liquid phase, which served as a densification aid for the ceramics. With additions of 0·2 wt% glass frit, densities in excess of 98% of theoretical were obtained after sintering at 115°C. By variation of the fabrication processes, the influence of sintering and poling conditions on the properties of the ceramics was studied.     

Sintering behavior and microwave dielectric properties of Bi2O3–ZnO–Nb2O5-based ceramics sintered under air and N2 atmosphere

The sintering behavior and dielectric properties of the monoclinic zirconolite-like structure compound Bi₂(Zn_1/3Nb_2/3)₂O₇ (BZN) and Bi₂(Zn_1/3Nb_2/3−xV_x)₂O₇ (BZNV, x = 0.001) sintered under air and N₂ atmosphere were investigated. The pure phase were obtained between 810 and 990 °C both for BZN and BZNV ceramics. The substitution of V₂O₅ and N₂ atmosphere accelerated the densification of ceramics slightly. The influences on microwave dielectric properties from different atmosphere were discussed in this work. The best microwave properties of BZN ceramics were obtained at 900 °C under N₂ atmosphere with _r = 76.1, Q = 850 and Q_f = 3260 GHz while the best properties of BZNV ceramics were got at 930 °C under air atmosphere with _r = 76.7, Q = 890 and Q_f = 3580 GHz. The temperature coefficient of resonant frequency τ_f was not obviously influenced by the different atmospheres. For BZN ceramics the τ_f was −79.8 ppm/°C while τ_f is −87.5 ppm/°C for BZNV ceramics.     

Temperature dependence of electrical and electromechanical properties of Pb(Mg1/3Nb2/3)O3–Pb(Ni1/3Nb2/3)O3–Pb(Zr,Ti)O3 thin films

The electrical and electromechanical properties of Pb(Mg_1/3Nb_2/3)O₃–Pb(Ni_1/3Nb_2/3)O₃–Pb(Zr,Ti)O₃ (PMN–PNN–PZT, PMN/PNN/PZT = 20/10/70) on Pt/Ti/SiO₂/Si substrates by chemical solution deposition was investigated. The PMN–PNN–PZT films annealed at 650 °C exhibited slim polarization hysteresis curves and a high dielectric constant of 2100 at room temperature. A broad dielectric maximum at approximately 140–170 °C was observed. The field-induced displacement was measured by scanning probe microscopy, the bipolar displacement was not hysteretic, and the effective piezoelectric coefficient (d₃₃) was 66 × 10⁻¹² m/V. The effective d₃₃ decreased with temperature, but the value at 100 °C remained 45 × 10⁻¹² m/V.     

Low-temperature sintering of PZT ceramics

The required sintering temperature of Pb(Zr_0·52Ti_0·48)O₃ ceramics (abbreviated as PZT 52/48) can be lowered to about 1000°C by incorporating Li₂CO₃, Na₂CO₃ or Bi₂O₃. A dielectric constant of about 1000 and a planar coupling factor of between 45% and 65% are obtained in PZT 52/48 ceramics sintered at 1025°C, with added Li₂CO₃ and Bi₂O₃. The optimal amount of the additives, which can be deduced from the densification, the dielectric and piezoelectric properties of the sintered PZT 52/48 ceramics, is 0·375 wt% of Li₂CO₃ together with an equal mole fraction of Bi₂O₃. A planar coupling factor of 65% is obtained. This is explained, with the aid of X-ray diffraction (XRD) analysis, by a maximum c/a ratio and consequently by a large spontaneous polarization. The PZT 52/48 ceramics sintered with Li₂CO₃ and Bi₂O₃ under the optimal conditions can have ε₃₃^T of about 1000, k_p higher than 60%, Q_m around 100 and tan δ less than 2·0%.     

Effects of addition of Pb(Y1/2Nb1/2)O3 (PYN) on microstructure and piezoelectric properties of Pb(Zr0.53Ti0.47)O3

Pure and Pb(Y_1/2Nb_1/2)O₃ (PYN)-doped Pb(Zr_0.53Ti_0.47)O₃ have been characterized. The samples were prepared by conventional mixed-oxide ceramic technology. PYN dopant was added to PZT at content levels ranging from 1 to 2.5 mol%. The microstructures of the samples were examined using SEM and TEM. The average grain size was observed to decrease as the dopant content increased. Herringbone-like and wedge-shaped domain patterns were observed in all the samples. The piezoelectric properties of PZT were greatly improved by the addition of PYN. The highest piezoelectric constant d₃₁ was nearly twice that of pure PZT.     

Effect of glass additions on the sintering and microwave properties of composite dielectric ceramics based on BaO–Ln2O3–TiO2 (Ln = Nd, La)

Ten weight percent BBZS (Bi₂O₃, B₂O₃, ZnO and SiO₂) glass was added to x(Ba₄Nd_9.333Ti₁₈O₅₄) − (1 − x)(BaLa₄Ti₄O₁₅) (BNLT, 0 ≤ x ≤ 1) composite dielectric ceramics to lower their sintering temperature whilst retaining microwave properties useful for low temperature co-fired ceramic and antenna core technology. With the addition of 10 wt% BBZS glass, dense BNLT composite ceramics were produced at temperatures between 950 and 1140 °C, depending on composition (x), an average reduction of sintering temperature by 350 °C. X-ray diffraction, scanning and transmission electron microscopy and Raman spectroscopy studies revealed that there was limited inter-reaction between BLT/BNT and the BBZS glass. Microwave property measurement showed that the addition of BBZS glass to BNLT ceramics had a negligible effect on _r and τ_f, although deterioration in the measured quality factor (Qf) was observed. The optimised composition (xBNT − (1 − x)BLT)/0.1BBZS (x = 0.75) had _r  61, τ_f  38 ppm/°C and Qf  2305 GHz.     

Temperature-dependent dielectric, impedance and tunability studies on bismuth zinc niobate ((Bi1.5Zn0.5)(Nb1.5Zn0.5)O7) ceramics

Bi₂O₃–ZnO–Nb₂O₅-based pyrochlore ceramics are receiving increasing attention due to their excellent dielectric properties in the microwave frequency range. Site disorder at the pyrochlore A-site is well known for lone pair active cations like Bi³⁺ and is attributed as the reason for this material's high dielectric constant and tunability. Bismuth zinc niobate ((Bi_1.5Zn_0.5)(Nb_1.5Zn_0.5)O₇) [BZN] ceramics are prepared by the conventional solid-state reactions. The relative permittivity (_r) and the dielectric loss tangent (tan δ) of the BZN ceramics sintered at 1000 °C are found to be around 130 and 0.0004, respectively at a frequency of 1 MHz measured at room temperature. The impedance spectroscopy measurements are conducted at different temperatures to separate grain and grain boundary contributions to the dielectric constant. The tunability of these ceramics is studied under a constant dc bias voltage.     

Investigation of some niobate-based dielectrics in view of base metal co-sintering

Bearing in mind the excellent dielectric properties at high frequency of some niobates like ZnNb₂O₆, Zn₃Nb₂O₈, BaNb₂O₆, Ba₅Nb₄O₁₅ (_r 20–45, tan δ < 10 × 10⁻⁴ and ρ_i > 10¹⁰ Ω cm), synthesis, sintering and properties of these oxides are reported. The lowering of their sintering temperature has been investigated for these four ceramics using sintering aids. Using appropriate additive, it is possible to densify these ceramics at a temperature for which base metal electrodes, e.g. Cu and Ag can be employed. Two formulations were found to be sinterable at 1000 °C (lower than the copper melting point) whereas a third formulation is co-sinterable with silver electrodes. For this later, the dielectric properties are globally maintained in comparison with the pure compound sintered at 1200 °C. This result makes this formulation suitable for silver based passive components devices manufacturing.     

Grain growth in TiO2-added ZnO–Bi2O3–CoO–MnO ceramics prepared by chemical processing

The effect of TiO₂ on the grain growth of the ZnO–Bi₂O₃–CoO–MnO ceramic system prepared by chemical coprecipitation, was studied between 1150 and 1300 °C in air. Bi₂O₃ melts during firing, and then TiO₂ dissolves into Bi₂O₃-rich liquid. TiO₂ initially reacts with Bi₂O₃ to form Bi₄Ti₃O₁₂. Above ≈1050 °C, Bi₄Ti₃O₁₂ reacts with ZnO to form Zn₂TiO₄ spinel phase. The kinetic study of grain growth carried out using the expression Gⁿ–G_oⁿ=K_o·t·exp(−Q/RT) gave grain exponent (n) value as 6 and the apparent activation energy (Q) as 226.46 kJ/mol. 1.00 mol% TiO₂ addition increased the grain growth exponent value from 6 to 7 and apparent activation energy with 1.00 mol% TiO₂ addition was found to be 197.10 kJ/mol. The ZnO grain size gradually increases with increasing TiO₂ content. Addition of TiO₂ may increase the reactivity of the Bi₂O₃-rich liquid towards the ZnO grain, thus affecting the ZnO grain growth.     

PREPARATION OF PEROVSKITE 0.75Pb(Ni1/3Nb2/3)O3-0.25PbTiO3 CERAMICS USING SEMICHEMICAL METHODS AND RELATED REACTION MECHANISMS

This article discusses a mechanism for preparing perovskite powders, 0.75Pb(Ni_1/3Nb_2/3)O₃-0.25PbTiO₃ (PNN-PT), using a semichemical method (SCM).Precursors were prepared by adding aqueous Ni(Ac)₂ solutions to an alcohol slurry of PbO, Nb₂O₅, and TiO₂. The TG-DTG and DSC analysis of the precursors and XRD analysis of the powders at different thermal treatment temperatures showed that the reaction mechanisms in this method differ from those in the conventional mixed-oxide method. The aqueous Ni(Ac)₂ solution reacted with PbO to form Pb(Ac)₂ · Pb(OH)₂ · H₂O and Ni(OH)₂, which decomposed to form nascent PbO and NiO, thereby improving the reactivity and distribution of PbO and NiO. Pb₃Nb₂O₈ and NiNb₂O₆ formed and were easily converted into the perovskite phase during the thermal treatment process. At a thermal treatment temperature of 850°C, the content of the perovskite phase reached 98%. Pyrochlore-free PNN-PT ceramic was obtained after 2 h of sintering at 1100°C, and its dielectric properties were found to be excellent at temperatures ranging between -55 and 120°C.     

Sm掺杂Pb(Mg1/3Nb2/3)O3-PZT压电陶瓷的研究

本文通过一步反应合成法制备了铌镁-锆钛酸铅(Pb(Mg_1/3Nb_2/3)O₃-Pb(Zr,Ti)O₃,PMN-PZT)压电陶瓷,研究了稀土元素钐(Sm)掺杂对PMN-PZT(x%(摩尔分数)Sm-PMN-PZT)结构与电学性能的影响规律,得到了具有高压电性、高机电耦合系数和高居里温度的压电陶瓷。当x=2.0时,压电常数d₃₃=611 pC/N,机电耦合系数k_p=0.68,介电损耗tan δ=1.65%,相对介电常数ε_r=2 650,居里温度T_C=283 ℃。测试压电陶瓷电致应变性能,在3 kV/mm下单极电致应变达到0.20%,显示出其大应变材料的特征。结果表明,Sm掺杂PMN-PZT压电陶瓷具有优异的综合电学性能,有望在换能器、传感器以及致动器等领域广泛应用。     

Effects of the sintering atmosphere on Nb-based dielectrics

The effects of a forming atmosphere on the stability, the sintering and the dielectric properties of Ba₅Nb₄O₁₅, BaNb₂O₆, ZnNb₂O₆ and Zn₃Nb₂O₈ ceramics were investigated, because of the primary importance of the sintering atmosphere in relation to copper sintering. These Nb-based materials were sintered in air and in Ar/H₂10%. Zn-containing samples are very sensitive to the reductive atmosphere. ZnO volatilises at 800–850 °C and the resulting compound does not exhibit the expected properties. BaNb₂O₆ and Ba₅Nb₄O₁₅ are more stable in term of relative weight loss. Nevertheless, the phase analysis reveals a modification of the BaNb₂O₆ phase, what induces the degradation of the dielectric property stability versus temperature. The properties of Ba₅Nb₄O₁₅ are not modified by a sintering in reductive atmosphere. A relative permittivity of 38.8, a permittivity temperature coefficient of −150 ppm °C⁻¹ and an insulating resistivity of 10^10.9 Ω cm were obtained for this latter.     

Synthesis and properties of Bi0.5(Na1−x−yKxAgy)0.5TiO3 lead-free piezoelectric ceramics

Bi_0.5(Na_1−x−yK_xAg_y)_0.5TiO₃ piezoelectric ceramics were prepared by conventional ceramic processes. X-ray diffraction patterns show a pure perovskite structure, indicating that the K⁺ and Ag⁺ ions substitute for the Na⁺ ions in Bi_0.5Na_0.5TiO₃. The temperature dependence of the dielectric constant and dissipation factor shows all ceramics to experience two phase transitions: from ferroelectric to anti-ferroelectric and from anti-ferroelectric to paraelectric. The transition temperature from ferroelectric to anti-ferroelectric and the temperature at which the dielectric constant reaches its maximum value decrease with the increase of K⁺ amount. At room temperature, the ceramics containing 17.5–20 mol% K⁺ and 2 mol% Ag⁺ exhibit high piezoelectric constant (d₃₃ = 180 pC/N) and high electromechanical coupling factor (k_p = 35%).     

Oxidation behavior of hot-pressed Si3N4 with Re2O3 (Re=Y, Yb, Er, La)

Four different β-Si₃N₄ ceramics with silicon oxynitrides [Y₁₀(SiO₄)₆N₂, Yb₄Si₂N₂O₇, Er₂Si₃N₄O₃, and La₁₀(SiO₄)₆N₂, respectively] as secondary phases have been fabricated by hot-pressing the Si₃N₄–Re₄Si₂N₂O₇ (Re=Y, Yb, Er, and La) compositions at 1820°C for 2 h under a pressure of 25 MPa. The oxidation behavior of the hot-pressed ceramics was characterized and compared with that of the ceramics fabricated from Si₃N₄–Re₂Si₂O₇ compositions. All Si₃N₄ ceramics investigated herein showed a parabolic weight gain with oxidation time at 1400°C and the oxidation products of the ceramics were SiO₂ and Re₂Si₂O₇. The Si₃N₄–Re₄Si₂N₂O₇ compositions showed inferior oxidation resistance to those from Si₃N₄–Re₂Si₂O₇ compositions, owing to the incompatibility of the secondary phases of those ceramics with SiO₂, the oxidation product of Si₃N₄. Si₃N₄ ceramics from a Si₃N₄–Er₄Si ₂N₂O₇ composition showed the best oxidation resistance of 0·198 mg cm⁻² after oxidation at 1400°C for 192 h in air among the compositions investigated herein.     

The reaction sequence and dielectric properties of BaSm2Ti4O12 ceramics

To establish the correct reaction sequence of BaO–Sm₂O₃–4TiO₂, phases present in different calcining temperatures are identified by X-ray diffraction patterns. When different calcining temperatures are used, the source phase BaO (BaCO₃) consumes below 850°C, the source phases TiO₂ and Sm₂O₃ consume at 1000 and 1150°C; the intermediate phases BaTiO₃, BaTi₄O₉, and Sm₂Ti₂O₇ consume at 1050, 1200, and 1250°C, respectively. The BaSm₂Ti₄O₁₂ phase starts to reveal at the 1100°C-calcined powder. The integrating intensity of BaSm₂Ti₄O₁₂ phase increases with the raising of calcining temperatures, accompanying with the decrease of integrating intensities of the source and intermediate phases. As the sintering temperature increases, the densities, quality values, and dielectric constants of BaSm₂Ti₄O₁₂ ceramics increase and saturate at 1325^oC. The BaSm₂Ti₄O₁₂ ceramics sintered at 1325°C have the properties of Q^*f=5180,_r=81.8, and τ_f=−19.2 ppm/°C.     

Relationships between crystal structure and microwave dielectric properties of (Zn1/3B2/3)xTi1 − xO2 (B = Nb, Ta) ceramics

Dependence of microwave dielectric properties on the crystal structure of (Zn_1/3B_2/3⁵⁺)_xTi_1 − xO₂ (B⁵⁺ = Nb, Ta) ceramics was investigated as a function of Zn_1/3B_2/3⁵⁺O₂ (B⁵⁺ = Nb, Ta) content (0.4 ≤ x ≤ 0.7). Dielectric constant (K) and the temperature coefficient of resonant frequency (TCF) of sintered specimens were strongly dependent on the structural characteristics of oxygen octahedra in rutile structure. Cation rattling and the distortion of oxygen octahedra were dependent on the bond length ratio of apical (d_apical)/equatorial (d_equatorial) of oxygen octahedra. The quality factor (Qf) was dependent on the reduction of Ti ion as well as the microstructure of the sintered specimens.     

Phase diagram of the Al2O3–ZrO2–Nd2O3 system

The phase diagram of the Al₂O₃–ZrO₂–Nd₂O₃ system was constructed in the temperature range 1250–2800 °C. The liquidus surface of the phase diagram reflects the preferentially eutectic interaction in the system. Two new ternary and one new binary eutectics were found. The minimum melting temperature is 1675 °C and it corresponds to the ternary eutectic Nd₂O₃·11Al₂O₃ + F-ZrO₂ + NdAlO₃. The solidus surface projection and the schematic of the alloy crystallization path confirm the preferentially congruent character of phase interaction in the ternary system. The polythermal sections present the complete phase diagram of the Al₂O₃–ZrO₂–Nd₂O₃ system. No ternary compounds or regions of remarkable solid solution were found in the components or binaries in this ternary system.     

Electrical properties of (Bi2O3)0.75(RE2O3)0.25 ceramics (RE=Dy, Y, Ho, Er and Yb)

Five kinds of rare earth stabilized bismuth oxide ceramics, (Bi₂O₃)_0.75(RE₂O₃)_0.25 (RE=Dy, Y, Ho, Er and Yb), were synthesized by sintering a mixture of Bi₂O₃ and RE₂O₃ at 900–1100 °C and their electrical properties were investigated. The bulk density and the lattice constant linearly increased with an increase in the atomic weight of RE and the ionic radius of RE³⁺, respectively. The electrical conductivity at 300 °C slightly increased with the increasing ionic radius of RE³⁺, while at 500 and 700 °C, it was constant regardless of the ionic radius of RE³⁺. The migration activation energy and the association activation energy showed a maximum value and a minimum value at RE=Er, respectively.     

Role of sintering on magneto-electric effect in CuFe1.8Cr0.2O4–Ba0.8Pb0.2Ti0.8Zr0.2O3 composite ceramics

Magnetoelectric composites containing CuFe_1.8Cr_0.2O₄–Ba_0.8Pb_0.2Ti_0.8Zr_0.2O₃ phases have been prepared by sintering them at different firing temperatures. The particle size for either phase of the composite was found to increase, whereas porosity decreases with increase in sintering temperature. This is due to the increase in the grain size with increase in sintering temperature. Resistivity of the composite decreases with increase in either sintering temperature or with increase in CuFe_1.8Cr_0.2O₄ content. The variation of dielectric constant (′) with temperature reflects DPT type behaviour. The peak value of dielectric constant (′_max) for a composite decreased with increase in its sintering temperature. The maximum value of the magnetoelectric conversion factor (dE/dH)_max equal to 182.7 μV/(cm*Oe) is obtained for 70% Ba_0.8Pb_0.2Ti_0.8Zr_0.2O₃–30% CuFe_1.8Cr_0.2O₄ composite when sintered at 1000°C.