带抽头的微带交指滤波器初始设计流程

带抽头的微带交指滤波器初始设计方法繁多,但设计不够全面、简洁,同时精度不高,因此给出了一套详细、简洁的初始设计流程。设计步骤为:指标“规范化”,确定低通原型滤波器,求解滤波器阶数,求解归一化电导值,设计抽头的线长和线宽,设计谐振器的线宽,设计非输入输出谐振器的线长,设计相邻谐振器间距,设计输入输出谐振器的线长和抽头的位置,交指滤波器整体建模仿真。最后以Ka波段滤波器为案例进行初始设计,初始设计结果显示中心频率在30.19 GHz附近,通带比29.40~31.00 GHz略大,通带内最大插入损耗为4.22 dB,最小回波损耗为9.32 dB,27.00 GHz和33.40 GHz的带外抑制大于30.00 dB,已经基本满足设计指标,后续只需要稍加优化就能完全满足设计指标,验证了此套设计流程的可行性及其较高的精度。     

一种高选择性可调带通与带阻可切换滤波器

设计了一种高选择性可调带通与带阻可切换微带滤波器。在微带谐振器及枝节末端加载变容二极管实现中心频率的可调;在输入与输出端口馈线之间,利用PIN二极管实现滤波器阻带和通带特性的切换。采用奇偶模的方法对滤波器结构进行分析,通过对奇偶模频率的调节实现了频率调节过程中的恒定绝对带宽。同时,在输入与输出馈线间引入源与负载耦合,使得频带两侧各有一个传输零点,且传输零点在整个频率调谐范围内相对位置几乎不变。因此,在整个频率调节范围内,滤波器实现了高选择性及良好的带外抑制能力。最终设计出的可调带阻滤波器的频率调谐范围为5.58～5.89 GHz,绝对带宽80 MHz±5 MHz,阻带衰减优于14 dB;可调带通滤波器的频率调谐范围为5.42～5.79 GHz,绝对带宽120 MHz±5 MHz,插入损耗1.69～2.25 dB,回波损耗优于13 dB。同时,该滤波器具有0.28λ_g×0.62λ_g（λ_g是可调频率范围中心频率的波长）的紧凑结构尺寸。实验和仿真结果一致性较好。     

方环结构的宽频可调超材料滤波器

采用微控制电路加载技术控制超材料的等效介电常数和等效磁导率在不同时间的空间分布形式,实现空间滤波器中心频率的可调.设计了一种方环缝隙结构超材料滤波器,单元结构尺寸为18.5mm×18.5mm,通过在单元结构上加载变容二极管实现X波段内的连续可调.当变容二极管电容值从0.15pF增大到0.70pF时,仿真结果表明滤波器的中心频率从11.8GHz逐渐减小到10.5GHz,工作带宽为16.3%(10.2~12.0GHz),通带内的回波损耗最小值为22dB,插入损耗最大值为0.6dB.测试结果表明滤波器的中心频率从11.7GHz逐渐减小到10.3GHz,工作带宽为17.2%(10.1~12.0GHz),且通带内的回波损耗最小值为25dB,插入损耗最大值为0.5dB.     

VHF波段超窄带超导滤波器的设计及其时域调谐

低频超窄带滤波器要求谐振器间的耦合极弱,设计受到薄膜面积限制,其性能对基片介电常数的均匀性极为敏感且受制作和封装精度的限制.这些因素将导致的滤波器中心频率偏移和带内性能恶化.对此,时域调谐提供了很好的解决途径.我们采用嵌套双螺旋型谐振器,在37mm×12mm的MgO基片上设计制作了4节超导滤波器,中心频率为166.9 MHz,相对带宽仅为0.29%.由于基片厚度或介电常数的偏差及不均匀性会导致滤波器中各谐振的谐振频率偏移,使通带性能受到很大影响.我们提出了将机械调谐与时域分析相结合的方法,通过机械调谐纠正各谐振器的谐振频率,改善滤波器性能.同时为了解决多信道滤波器系统中,各滤波器工作于同一温度下,系统频率一致性问题,通过时域调谐获得频率可调范围信息.对上述0.5 MHz带宽的VHF波段滤波器应用时域调谐方法,得到的可调范围为0.7 MHz,测试结果表明该滤波器具有优异性能,带内插损小于0.4 dB,反射损耗达到14.8 dB,带外抑制大于-70 dB.     

高温超导滤波器频带偏移研究——以L波段滤波器为例

基于阶跃阻抗谐振器(SIR)设计了一款工作于L波段的十四阶高温超导带通滤波器,借助交叉耦合结构在通带两侧引入两对传输零点以提高带边陡度,使得滤波器的60 dB/3 dB矩形度优于1.25。滤波器制备在双面涂覆YBCO薄膜、厚度为0.500 mm的MgO基片上。70 K温度下的测试结果表明：其带外抑制优于80 dB,插入损耗优于0.31 dB,反射损耗优于14.8 dB,通带范围为1.235～1.271 GHz。与设计指标1.250～1.286 GHz相比,通带范围往低频端整体偏移15 MHz。梳理滤波器的研制流程,经分析后认为频带偏移主要源于光刻、刻蚀中线条变窄效应和超导薄膜在超导状态下的动态电感效应。     

WCDMA系统用窄带高温超导滤波器设计

本文在耦合矩阵的基础上设计了一个适用于WCDMA系统的12节窄带高温超导带通滤波器.滤波器基于镀有双面YBCO超导薄膜的蓝宝石基片设计,尺寸为47.54mm×18.12mm,中心频率为1940MHz,相对带宽为0.5%.滤波器采用具有非相邻耦合较弱特点的双层环带结构谐振器,抑制了不可控传输零点的出现.设计结果显示高频端和低频端的通带带边陡峭度分别达到了27.3dB/MHz和30dB/MHz,带内插损小于0.07dB,带外抑制达到100dB.本文同时讨论了交叉耦合对滤波器性能的影响.     

CDMA移动通信用高温超导滤波器的研制

本文提出了一种新型H型环带谐振器,具有结构紧凑,尺寸小,Q值高,非相邻耦合弱等优点.该谐振器在一侧设置了一个开口,改变开口位置,可以在较大范围内改变谐振器谐振频率,并且能够改变基频和二倍谐频之间的频率间隔.对于直连型馈线引入方式,H型环带谐振器容易实现外部Q值的匹配,同时对输入/输出端谐振器的谐振频率影响很小.本文还基于H型环带谐振器,采用2英寸双面YBCO高温超导薄膜设计并制作了用于CDMA移动通信系统的12节高温超导滤波器.该滤波器的中心频率为832MHz,相对带宽为1.6%.在70K温度下的测试结果显示滤波器的带内插入损耗低于0.28dB,反射损耗优于-15.5dB,带外抑制约为75dB,通带低频端带边陡峭度超过30dB/MHz,高频端带边陡峭度超过20dB/MHz.     

具有二次谐波抑制的小型高温超导滤波器设计

采用全波电磁仿真分析方法,设计制作了8阶高温超导带通滤波器。通过在半波长发夹型谐振器的基础上引入分形及插指结构,使得滤波器整体体积较小,同时可有效解决滤波器二倍频处寄生通带问题。最终滤波器的版图大小为22mm×11mm,达到了滤波器小型化的目的。在77K温度下,测得未经调谐的滤波器中心频率为2451.6MHz,通带宽度为108MHz,通带内插入损耗小于0.28dB,回波损耗优于11.74dB,带外抑制大于45dB,二次谐波寄生通带被抑制到三倍频之外。     

低射频窄通带高温超导滤波器设计

本文在双面YBCO高温超导薄膜上设计了12节低射频窄通带超导带通滤波器.中心频率385MHz,相对带宽1.3%,考虑到窄带滤波器对衬底介电常数的敏感性,采用MgO基片以避免基片孪晶造成的介电常数非均匀性带来的影响.为了能在不大于2英寸的基片上制备出如此低频的高性能超导滤波器,设计中选用了1/4波长的螺旋形谐振结构.设计结果的带边陡峭度达到了50dB/MHz,带内插损小于0.014dB,带外抑制达到100dB,二倍频处抑制度优于130dB.     

S波段高温超导滤波器的研制

本文采用全波电磁仿真分析方法,在YBCO/LAO/YBCO双面超导薄膜(介电常数为23.5)上设计并研制了具有内部耦合的8级高温超导(HTSC)小型化多曲折滤波器,在77K时基本未经调谐测得其中心频率为3.6GHz,带宽为200MHz,通带内插入损耗<0.2dB,回波损耗优于-20dB,带外抑制优于50dB.本文研制的S波段高温超导滤波器在移动通讯和卫星通讯领域具有广泛的应用前景,测试结果表明,滤波器具有较为优异的性能.     

C-band three-port tunable band-pass thin film optical filter with low polarization-sensitivity

According to the oblique incidence characteristics of thin film narrowband filter, the stack of 100 GHz DWDM four cavities angle-tuned thin film filter has been designed and optimized. The two polarization modes’ central wavelengths of the thin film filter can be centered at the same one in oblique incidence, and it has a stable tuning range of 20 nm without the phenomenon of polarization central wavelength separation. Using this kind of angle-tuned thin film filter and the polarization beam-splitters, the tuning range of the angle-tuned thin film filter can be further expanded due to the reason that it can transmit only the s-polarization light. In this paper we also developed a three-port bandpass tunable filter device with new structure, which tuning range can cover the whole C-band and its adjacent channel isolation degree is high. The experiments show that the three-port tunable filter has an effective tuning range of 33 nm, and its adjacent channel isolation degree is more than 35 dB. It has a bright application opportunity for its flexibility and effective performance.     

Design of non-polarization angle-tuned narrowband thin film filter

Angle-tuned thin film bandpass filter is widely used in DWDM system. In oblique incidence, the bandwidths and central wavelengths of the P-polarization and S-polarization light will separate obviously, which will cause serious polarization dependent loss. These phenomena of the polarization sensitivities are analyzed and a novel non-polarization 100 GHz four-cavity narrowband dielectric thin film stack used in oblique incidence is proposed. The simulation results show that it can eliminate the polarization bandwidths and central wavelengths separation within the incident angle from 0° to 25°, and its tunable range can cover the whole C-band.     

A compact sharp-edge wide bandpass near-infrared filter based on graded-index sinusoidally corrugated photonic crystal

In this study, a wide-bandpass near-infrared filter is devised based on a novel sinusoidally corrugated multilayer structure. The presented structure exhibits a wider bandpass and higher average transmission amplitude than the conventional triangular design. Cut-on frequency of the proposed bandpass filter can be tuned by the variation of horizontal lattice constant. Thus it can be applied as a tunable multichannel filter. Particle swarm optimization procedure was carried out to find the optimal arrangement of dielectric materials to eliminate the undesired fluctuations in the transmission spectrum at the beginning of the passband region. We compared the bandpass filtering behavior of the simple/graded sinusoidal photonic structures with and without anti-reflective double layer coating. Utilization of the optimized graded-index Quasi-periodic photonic crystal results in a sharper cut-on wavelength as well as flatter transmission spectrum than the application of the anti-reflective double-layer coating.     

Novel Bandpass Filter Configuration Using Coupled Linear Tapered Line Resonators

A novel tapped bandpass filter composed of twocoupled linear taperedline resonators (LTLRs) is proposed. Multistepped resonators are applied to analyzing LTLRs, which are difficult to analyze directly. Through this analysis method, fundamental characteristics of LTLRs and their filter design parameters can be easily derived. This new filter has insertion loss less than 0.6dB at 1.9 GHz, the return loss less than 18dB in the range 1.81.93GHz and 12.3% 3dB bandwidth. Experimental results of fabricated filter are in good agreement with the design results.     

Bias stress effect in low-voltage organic thin-film transistors

The bias stress effect in pentacene organic thin-film transistors has been investigated. The transistors utilize a thin gate dielectric based on an organic self-assembled monolayer and thus can be operated at low voltages. The bias stress-induced threshold voltage shift has been analyzed for different drain-source voltages. By fitting the time-dependent threshold voltage shift to a stretched exponential function, both the maximum (equilibrium) threshold voltage shift and the time constant of the threshold voltage shift were determined for each drain-source voltage. It was found that both the equilibrium threshold voltage shift and the time constant decrease significantly with increasing drain-source voltage. This suggests that when a drain-source voltage is applied to the transistor during gate bias stress, the tilting of the HOMO and LUMO bands along the channel creates a pathway for the fast release of trapped carriers.     

The effects of substrate temperatures on the electrical properties of CaZrO3 thin films prepared by RF magnetron sputtering

The radio frequency magnetron sputtering technology (RFMS) was employed to deposit perovskite structure orthogonal phase CaZrO₃ thin films on Pt/Ti/SiO₂/Si substrates. The effects of substrate temperatures on structure and electrical properties of these films were investigated in detail. The CaZrO₃ thin films were systematically characterized by means of X-ray diffraction (XRD), Scanning electron microscope (SEM), Multi-frequency LCR meter (HP4294A) and Radiant Precision Workstation to study the phase structure, cross-section morphology, dielectric and ferroelectric properties at different substrate temperatures. The result indicates that these films can withstand 80 V DC Bias voltage and have excellent stability of frequency, voltage and temperature. The CaZrO₃ thin film prepared at 550 °C turned out to be mainly orthorhombic CaZrO₃ phase with high permittivity, low dielectric loss, extremely low leakage current (at 1 MHz, the dielectric constant is 39.42, the dielectric loss is 0.00455, the quality factor is 220 and the leakage current density is 9.11 × 10⁻⁷A/cm² at 80 V applied voltage.). This work demonstrates that higher substrate temperature can boost the formation of orthorhombic CaZrO₃ phase and the CaZrO₃ thin film prepared by RF magnetron sputtering is a very promising paraelectric material in the application of thin film capacitor.     

一种有效提高薄膜滤光片型密集波分复用器器件性能的方法及其实验研究

对光梳状滤波器加薄膜滤光片型模块制作密集波分复用器(DWDM)的两种应用方案进行了研究,提出了一种提高插损一致性、信道隔离度及减小串扰的结构方案。对新结构方案与常规结构方案进行了理论分析及实验研究,结果表明新结构可将级联次级峰由大于-30dB降至-50dB以下。用16波50GHz的密集波分复用器件拼接进行的实验表明最终器件的插损减小0．869dB,插损一致性减小2．005dB,相邻信道隔离度提高1．004dB,非相邻信道隔离度提高42．903dB．总串扰提高1．68dB。该方案不仅可以应用到光梳状滤波器与薄膜滤光片型模块拼接高性能的超密集波分复用器件．同样也可适用于阵列波导光栅等类型的密集波分复用器件中以降低工艺难度,提高性能指标。     

Design of a varactor-tunable metamaterial absorber

In this paper, we design a varactor-tunable metamaterial absorber （MA）. The tunable MA is based on a mushroom-type high impedance surface （HIS）, in which varactors are loaded between adjacent metal patches to adjust the capacitance and tune the resonance frequency, the primary ground plane is etched as the bias network to bias all of the varactors in parallel, and another ultra-thin grounded film is attached to the bottom. Its absorption characteristics are realized for electrically dielectric loss. The simulated values of a sample indicate that a tunable frequency range from 2.85 GHz to 2.22 GHz is achieved by adjusting the varactor capacitance from 0.1 pF to 2.0 pF, and better than 0.97 absorbance is realized; in addition, the tunable frequency range is expanded from 4.12 GHz to 1.70 GHz after optimization.     

一种用于60 GHz通信的S型结构左手材料的设计

基于对S型结构的理论分析,将中心频率设置为60 GHz,通过合理的改变单元结构中相应的尺寸以实现所需电谐振和磁谐振频率,并且经过优化以实现负介电常量和负磁导率的重合频段尽可能理想. 运用反演参量提取方法进行电磁参量提取,可以得到本设计在58.1~61.4 GHz频段内其ε和μ同时为负,即左手频段. 分析散射参量的仿真结果,在58~62 GHz频段内S₂₁大于-3 dB,在59.8~60.4 GHz频段内,S₁₁小于-20 dB,因此该设计结果可以运用于60 GHz通信滤波器和天线等器件的研究与设计.