共查询到19条相似文献,搜索用时 171 毫秒
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采用溶胶凝胶法制备了LaMnOx(LMO)薄膜,系统研究了不同烧结温度、纵向直流磁场后退火和生长膜层数对LMO薄膜的巨磁阻抗效应的影响。结果表明,烧结温度、膜的层数以及纵向磁场后退火处理均有效提高了LMO的巨磁阻抗比,其中纵向直流磁场后退火处理提高薄膜阻抗比效果最显著,经过10Oe、400℃恒温1h磁场后退火处理后,在频率5MHz、100Oe外磁场下其磁阻抗比达15.8%,相比未后处理样品磁阻抗比提高了一倍,其对应的磁场灵敏度为0.16%/Oe。同时,实验发现磁场后退火不仅影响薄膜的巨磁阻抗比,也会改变阻抗比极大值所对应的激励频率,这一现象目前仍在探究中。 相似文献
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用高频溅射法制备了FeZrBNb合金薄膜,研究了制备条件、制备工艺对薄膜样品巨磁阻抗效应的影响.结果表明,增大薄膜的厚度可以提高样品的阻抗比,13 MHz下,厚度为10.8 μm的薄膜样品的最大纵向阻抗比为2.5%;在制备过程中加磁场可以在薄膜中感生出磁各向异性场,进而提高薄膜的阻抗比.同时,退火可以提高材料的软磁特性,增强薄膜的巨磁阻抗效应,对薄膜进行退火处理后,薄膜的纵向和横向阻抗比分别提高到1.7%和1.5%. 相似文献
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CoSiN薄膜可以作为超大规模集成电路Cu布线互连材料使用。利用磁控溅射技术制备了CoSiN/Cu/CoSiN/SiO2/Si薄膜,利用四探针测试仪、薄膜测厚仪、原子力显微镜、X射线光电子能谱仪等来检测多层膜电阻率、薄膜厚度、表面形貌、元素含量及价态等。考察亚45 nm级工艺条件下CoSiN薄膜对Cu的扩散阻挡性能。实验结果表明,在氩气气氛条件下经500℃,30 min热退火处理后多层膜的电阻率和成分没有发生明显变化,CoSiN薄膜能够保持良好的铜扩散阻挡性能;经600℃,30 min热退火处理后,Cu大量出现在表面,CoSiN薄膜对Cu失去扩散阻挡性能。 相似文献
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FeCuNbCrSiB薄膜的制备及其巨磁阻抗效应研究 总被引:1,自引:1,他引:0
采用磁控溅射方法,在玻璃基片上制备了非晶的Fe73.5Cu1Nb3Cr0.5Si13B9薄膜及三明治结构M/C/M(M为Fe73.5Cu1Nb3Cr0.5Si13B9;C为Cu)的多层膜。在频率(1~40)MHz下,研究了薄膜材料的巨磁阻抗(GMI)效应随外加磁场的变化关系。结果表明:单层膜的GMI效应较小,只有4.4%;而三明治结构多层膜的GMI效应,比单层膜有较大幅度的提高,在5MHz、120Oe下,纵向和横向GMI效应分别达–17.4%和–20.7%。薄膜材料的纵向GMI效应随外加磁场变化呈现先增后减,而横向GMI效应随外加磁场的增加而单调递减,其变化规律与薄膜的易轴取向有很大关系。 相似文献
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W. H. Lee Y. K. Ko B. J. Kang B. S. Cho H. J. Yang G. S. Chae H. S. Soh J. G. Lee 《Journal of Electronic Materials》2002,31(8):857-860
The effect of annealing in an O2 ambient on Cu(Mg)/SiO2/Si multilayer films was investigated. As-deposited Cu(Mg)/SiO2/Si multilayer samples with film thicknesses in the 1,000–3,000 ? range were annealed for 30 min in oxygen ambients at pressures
ranging from vacuum to 100 mtorr. The results showed that annealing in an 8-mtorr O2 ambient significantly decreased the electrical resistivity of a 1,000 ? sample from 10.5 μΩ-cm to 3.7 μΩ-cm. Annealing in
the O2 ambient enhanced Mg diffusion to the surface in comparison to vacuum annealing. Furthermore, O2 ambient annealing leads to excessive grain growth. However, the effect of O2 ambient annealing on resistivity is less when the thickness of the film increases. 相似文献
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ZnO/Cu/ZnO transparent conductive multilayer films are prepared by simultaneous RF sputtering of ZnO and DC sputtering of Cu. The properties of the multilayer films are studied at different substrate temperatures. Sheet resistance of the multilayer film decreased initially with increase of substrate temperature and increased further with increase of substrate temperature beyond 100 °C. However, transmittance of the multilayer film increased with increase of substrate temperature. Good transparent conductive film of sheet resistance 9.3 Ω/sq and transmittance of 85% was found at a substrate temperature of 100 °C. The performance of the multilayer film was evaluated using a figure of merit. The observed property of the multilayer film is suitable for the application of transparent conductive electrodes. 相似文献
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采用磁控溅射方法在Si(111)基底上沉积不同调制周期的Cu/TaN多层膜,用X射线衍射仪(XRD)与原子力显微镜(AFM)表征薄膜微结构与表面形貌,研究了不同调制周期L薄膜的微结构与表面形貌.结果表明:不同L的TaN调制层均为非晶结构,多晶Cu调制层的晶粒取向组成随着L改变而变化; Cu调制层的表面粗糙度Rrms.大于TaN调制层的Rrms;与Cu单层膜相比,最外层为Cu调制层的Cu/TaN多层膜的Rrms较小;与TaN单层膜相比,最外层为TaN调制层的Cu/TaN多层膜的/Rrms较大;随着L增加,多层膜与对应的单层膜之间的兄Rrms差值逐渐减小. 相似文献
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为了获得具有一定厚度的四面体非晶碳薄膜,利用过滤阴极真空电弧(FCVA)沉积技术,通过交替改变衬底偏压的方法制备了多层四面体非晶碳(ta?鄄C)薄膜。多层膜由富sp2子膜层Ai与富sp3子膜层Bi交替组成(i=1,2,3),各子膜层厚度比dAi/dBi约为1.0,总的膜厚约为1 m。根据Stoney公式计算多层膜的各子膜层压应力呈交替起伏变化。多层四面体非晶碳膜在500 ℃以下的真空退火处理后,可见光Raman谱表明,多层膜的富sp3杂化结构基本保持不变,纳米压痕测量的薄膜硬度与杨氏模量略微增加,纳米划擦实验表明,多层膜具有优良的耐磨性与附着性。因此,多层ta?鄄C膜具有优良的力学性能和热稳定性,是一种优异的航空航天用光学元件的表面保护膜。 相似文献
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D. P. Belozorov A. G. Ravlik B. Z. Rameev S. T. Roschenko I. G. Shipkova S. I. Tarapov 《Journal of Infrared, Millimeter and Terahertz Waves》2000,21(10):1627-1638
High frequency resonance technique was applied to study of magnetic multilayer Co/Cu films possess the giant magnetoresistance. The results of the ferromagnetic resonance study in 60GHz-80GHz and 1OGHz bands revealed low temperature changes of g-factor after annealing and a very small value of high frequency saturation magnetization. An abrupt change of the specimen impedance was registered in low field low field range for 10GHz. The static magnetic characteristics as hysteresis and magnetoresistance loops were obtained at room temperature for the planar orientation of external magnetic field. 相似文献
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针对在柔性衬底上制备非晶软磁薄膜的技术难题,该文研究并制作了一种基于柔性聚酰亚胺(PI)衬底的磁声表面波(MSAW)谐振器。通过在柔性PI衬底上溅射沉积了非晶FeCoSiB磁致伸缩薄膜和ScAlN压电薄膜,光刻制备了叉指电极,并形成IDT/ScAlN/FeCoSiB/PI层状结构,成功获得了柔性MSAW谐振器。采用X线衍射(XRD)和原子力显微镜(AFM)分析了薄膜的结构和表面形貌及利用振动样品磁强计(VSM)和短路微带线法测试了FeCoSiB薄膜的静态磁性和高频磁谱特性,最后在探针台上利用矢量网络分析仪对器件进行测试,并与COMSOL仿真结果进行对比。实验结果表明,该MSAW器件有两个谐振峰,其中瑞利波出现在28.32 MHz,兰姆波出现在93.69 MHz。 相似文献
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Ping Liu 《Microelectronic Engineering》2008,85(10):1984-1987
Carbon nanotubes/copper (CNTs/Cu) composite thin films were fabricated by combined electrophoresis and electroplating techniques. Electrical properties and structure of both CNTs/Cu thin films and the reference pure Cu thin films were investigated after annealing at different temperatures. The sheet electrical resistance of CNTs/Cu films decreases faster than that of pure Cu films with increase of annealing temperature. The grain size of CNTs/Cu film becomes much larger than that of pure Cu film at the same annealing temperature. The peak relative intensity of Cu (1 1 1) plane in CNTs/Cu film was stronger than that of pure Cu film. CNTs/Cu composite thin films, with better electrical properties than that of conventional pure Cu thin films, have been fabricated by electrophoresis and electroplating deposition techniques. 相似文献
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Improvements of resonance characteristics due to thermal annealing of Bragg reflectors in ZnO-based FBAR devices 总被引:2,自引:0,他引:2
The effects of thermal annealing of W/SiO/sub 2/ multilayer Bragg reflectors on the resonance characteristics of ZnO-based film bulk acoustic resonator (FBAR) devices are presented for the first time. The resonance characteristics could be significantly improved due to thermal annealing. FBAR devices with Bragg reflectors annealed at 400/spl deg/C/30 min show excellent resonance characteristics in terms of return loss and Q-factor. 相似文献