基于斜投影的DOA估计和盲信号识别协同算法

阵列信号处理领域中,经常需要分析阵列接收信号的波达方向(DOA)和波形信息。在缺乏信号先验DOA和波形信息的情况下,提出了一种新的斜投影DOA估计和盲信号识别协同算法,实现对未知阵列接收信号的自适应分析。该算法交替地采用斜投影空域滤波技术将阵列接收信号拆分为单信号群组,在每个单信号群组内进行DOA和波形联合估计。算法适用于主瓣干扰存在的情况,并且在中小快拍数下有较好的估计性能。理论分析和仿真实验证实了文中算法的有效性。     

基于压缩感知的单端口高分辨率DOA估计

基于空间目标空域的稀疏性,提出一种基于压缩感知(CS)的单端口波达方向(DOA)估计算法.在单端口阵列的基础上,验证了其压缩感知模型的感知矩阵满足约束等容(RIP)的条件,并利用丹茨格选择器(DS)恢复原始信号.该算法在一个射频端口的情况下,可在低快拍数情况下有效估计任意相干性信号的DOA,算法具有高的估计精度及角度分辨率,其性能优于传统DOA估计算法.仿真结果验证了该算法的有效性和优越性.     

一种改进的MVDR相干信源DOA估计算法

最小方差无失真响应(MVDR)算法是一种经典的波束形成算法,同时也能实现DOA估计,但是其分辨力往往比较低.针对这一不足,提出了一种改进的MVDR相干信源DOA估计算法.该算法首先对阵列接收数据阵进行共轭重排构造出增广数据矩阵,然后利用奇异值分解(SVD)求出增广矩阵的伪逆,再用传统的MVDR算法进行DOA估计.仿真结果表明,与传统的MVDR算法和前后向空间平滑算法相比,在阵元数较少和快拍数较低的情况下,该算法具有更高的DOA估计精度和分辨力,因而是一种很好的相干信号DOA估计算法.     

基于互相关抽样分解的分布式非圆信号DOA快速估计

在非相干分布式非圆信号波达方向(DOA)估计中,针对利用信号非圆特性后输出矩阵维数扩展带来的较大运算量问题,该文提出一种基于互相关抽样分解的DOA快速估计算法。该算法仅需要从子阵间的扩展互相关矩阵中抽样出少量行元素和列元素,构成两个低维子矩阵,进而通过低秩近似分解便可快速地同时求出左右奇异矢量,即分别对应两个子阵的信号子空间,避免了计算整个互相关矩阵及其奇异值分解运算;最后利用两个子阵信号子空间的旋转不变性通过最小二乘得到DOA估计。仿真分析表明,当行列抽样数大于信源数的两倍时,所提算法与直接基于互相关矩阵奇异值分解的非相干分布式非圆信号DOA估计算法性能相近,但复杂度得到了大幅度降低;而相比于传统的低复杂度非相干分布源DOA估计算法,所提算法利用信号非圆特性具有更高的估计性能。     

互质阵列DOA估计性能综合分析北大核心CSCD

互质阵列是近年来兴起的新型阵列,能显著提高阵列自由度,处理信源数大于阵元数时的波达方向(DOA)估计,且能提高角度分辨率和测角精度。文中根据互质阵物理阵元和虚拟阵元特点,结合多重信号分类(MUSIC)算法提出适用于互质阵基于物理阵列和虚拟阵列的DOA估计方法。该方法以非相干信号源为研究对象,利用互质阵列建立信号接收模型,基于物理阵列的DOA估计方法根据互质阵物理阵元位置特点推导其导向矢量,然后根据导向矢量计算回波信号数据和信号协方差矩阵,最后利用MUSIC算法进行DOA估计。基于虚拟阵列的DOA估计方法根据其虚拟阵元数据特点在向量化协方差矩阵并去冗余后选取连续虚拟阵元接收数据,然后对新协方差矩阵进行一维Toeplitz平滑重构,最后利用MUSIC算法或求根MUSIC算法进行DOA估计。与等阵元数的均匀线阵进行对比,仿真实验验证了互质阵列DOA估计性能的优越性。     

无参考信号条件下基于MSWF的DOA估计算法

现有基于多级维纳滤波(MSWF)的子空间法波达方向(DOA)估计算法复杂度较低,但需要先验的参考信号.论文从MSWF求解线性预测问题入手,将基于MSWF的线性预测和子空间两种不同的DOA估计方法结合起来,提出了一种实用的低复杂度DOA估计算法.该算法无需构造专门的参考信号,在低信噪比或信源数估计不准的情况下,算法依然具有较好的稳健性和估计性能.仿真实验验证了本文的结论.     

非均匀噪声背景下混合信号DOA估计算法

针对非均匀噪声背景下非相关信源与相干信源并存时波达方向(DOA)估计问题，提出了基于迭代最小二乘和空间差分平滑的混合信号DOA估计算法。首先，该算法利用迭代最小二乘方法得到噪声协方差矩阵估计，然后对数据协方差矩阵进行“去噪”处理，利用子空间旋转不变技术实现非相关信源DOA估计；其次，基于空间差分法消除非相关信号并构造新矩阵进行前后向空间平滑，利用求根MUSIC算法估计相干信源DOA。相比于传统算法，该算法能估计更多的信源数，在低信噪比情况下DOA估计性能更优越。仿真实验结果验证了该算法的有效性。      

基于协方差矩阵加权截断核范数的DOA估计

针对互质阵列通过差联合处理得到具有高自由度的虚拟阵列存在空洞位置,导致子空间类算法不适用、阵元利用率不足等问题,文中提出了一种基于加权截断核范数的协方差矩阵重构的波达方向(DOA)估计算法。该算法首先根据虚拟域信号表达式和空洞位置构建待填充矩阵;然后,利用最小化加权截断核范数实现阵列插值;最后,迭代重构接收信号协方差矩阵得到角度功率谱估计。仿真结果表明：所提算法可快速准确地实现DOA参数估计,相比基于最小化核范数和截断核函数正则化的DOA估计算法,该算法具有良好的鲁棒性,在快拍数小和信噪比低的情况下均具有较高的估计精度。     

分数阶傅里叶变换的多项式相位信号DOA估计

针对多项式相位信号波达方向(DOA)估计研究较少的问题,提出了一种基于分数阶傅里 叶变换(FRFT)的多项式相位信号(PPS)的DOA估计算法。该算法首先通过多项式相位变换,估 计出PPS的最高阶相位系数,从而可以消除最高阶项。运用这一降阶思想,依次消除高阶项 ,这样PPS可降为线性调频(LFM)信号,然后将宽带的LFM信号转化为分数阶Fourier域窄带的 平稳信号。在相应的分数阶Fourier域,运用求根MUSIC算法对信号进行DOA估计,从而把LFM 信号的DOA估计推广到了PPS的DOA估计。理论分析和仿真实验表明,该方法能很好地估计出P PS的DOA,并且简洁。     

稳健性虚拟波达角算法研究

现有研究表明,利用高阶累积量可以对实际阵列进行虚拟孔径扩展,从而产生了例如MUSIC-LIKE、VMUSIC与VESPRIT等波达角(DOA)算法。然而这些算法只有在信号数已知前提下才能工作,这并不符合实际情况,因此有很大的应用局限性。为了解决这一问题,文中对一种稳健性虚拟波达角算法进行了研究。该算法在入射信号数未知的条件下,能够利用四阶累积量矩阵构造恒定维数的噪声子空间,并由此估计出备选DOA信息,进而根据一定的准则筛选出真实DOA。计算机仿真试验表明新算法有着良好DOA估计性能,并能给出对入射信号数的稳健性估计。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.