高功率半导体激光泵浦源研究进展

高功率半导体激光器是固体激光器和光纤激光器的主要泵浦源。激光泵浦源性能的大幅提升直接促进了固体激光器、光纤激光器等激光器的发展。主要介绍了8xx nm和9xx nm系列半导体激光泵浦源的最新研究进展,8xx nm单管输出功率已达18.8 W@95μm,巴条输出功率已达1.8 kW(QCW),9xx nm单管输出功率已达35 W@100μm,巴条输出功率已达1.98 kW(QCW)。谱宽<1 nm的窄谱宽半导体激光器输出功率可达14 W。展望了未来半导体激光器泵浦源的发展趋势。     

闪耀光栅外腔反馈压窄半导体激光器线宽技术的研究

在讨论半导体激光线宽压窄理论的基础上,利用闪耀光栅作为外部反馈元件,介绍了由中心波长为949.6nm、原始线宽为1.2THz的单管半导体激光器构成的反馈外腔,它能够很好的改善半导体激光器的性能。实验得到了中心波长稳定的、单纵模的高质量激光输出,边模抑制比大于30dB,线宽优于1.2MHz(Δλ<3.6×10-6nm)。实验证实了强反馈能够很好地改善外腔半导体激光器的动态特性。     

不同形状的光斑触发砷化镓光导开关

为研究使用不同形状光斑触发光导开关对光电导特性的影响,研制了12 mm间隙的半绝缘砷化镓光导开关,在不同的偏置电压下,使用波长为1 064 nm的不同能量的激光触发光导开关并进行了光电导测试。使用了不同形状的光斑(包括面状、线状和点状光斑)触发光导开关并进行了光电导特性的比较,讨论了触发光参数对光导开关特性的影响。对处于开关电极间不同位置的线状光斑触发特性进行了比较,结果显示,本征光电导和非本征光电导情况下光斑位置对光电流的影响正好相反。     

SESAM‐free mode‐locked semiconductor disk laser

Experimental demonstration of semiconductor saturable absorber‐free mode‐locked optically pumped semiconductor disk laser is presented. The origin of pulsed operation is attributed to the intensity dependent Kerr lens effect arising in the semiconductor gain medium. Achieved results represent a novel method to mode‐lock this type of laser opening new application opportunities. The laser worked stably in both hard and soft aperture configurations. No semiconductor saturable absorber was used in the laser cavity and the operation was self‐starting. The laser was mode‐locked at 210 MHz repetition rate with 1.5 W average output power and 930 fs pulse width at 985 nm. A record high 6.8 kW peak power was achieved. Measured data is presented along with a discussion of the Kerr lens effect in the cavity.     

920nm光抽运垂直外腔面发射半导体激光器结构设计(英文)

设计并优化了一种用808nm的大功率激光二极管为抽运光源,In0.09Ga0.91As量子阱结构为增益介质的920nm光抽运半导体垂直外腔面发射激光器。运用有限元方法,对激光器的电特性方程和光特性方程求自洽解,计算了器件各种特性参量。分析了单个周期内不同阱的个数(1,2和3)、不同阱深、不同垒宽、不同非吸收层组分、不同非吸收层尺寸条件下,器件性能的改变,特别是模式、阈值和光-光转换效率的改变,从而选择一个最佳的结构。     

Study on the Near Field of the Semiconductor Laser by Using Scanning Near Field Optical Microscope

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AuSn焊料组分对半导体激光器件性能的影响

为了提高半导体激光器件的可靠性,研究了AlN过渡热沉上AuSn焊料不同配比对半导体激光器器件性能的影响。利用MOCVD 生长975 nm芯片,通过对半导体激光器器件表面形貌、空洞、光谱特性、热阻特性以及寿命测试,Au组分比重低于72%的AlN过渡热沉封装器件表面颜色明显不同于组分相对较高的,空洞较多,平均波长红移约5 nm,在寿命试验中过早失效,最终得出AuSn焊料中Au组分比重最好大于72%,小于80%,才能保证封装器件焊接质量,为实际生产和使用提供了指导意义。     

A Micro Blue-violet Laser by Frequency Doubling of Semiconductor Laser

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体布拉格光栅外腔半导体激光器光谱特性研究

用体布拉格光栅(VBG)作为反馈元件与瓦级半导体激光器(LD)以及快轴准直柱透镜构成一个可以将半导体激光器的工作波长稳定在体布拉格光栅布拉格波长处的外腔激光器。测量了体布拉格光栅外腔激光器的波长稳定性与其工作电流、热汇温度、激光束准直装置等因素的关系。分析了波长稳定效果与半导体激光器增益谱特性、外腔结构参量等因素的关系。研究表明,在相同的工作电流、热汇温度下,当准直柱透镜直径为0.4 mm时的波长稳定效果较好;在此情况下,当热汇温度控制在30℃,工作电流从0.5 A增加到1.5 A的测量范围内,以及当工作电流固定在1.5 A,热汇温度从20℃增加到35℃时,测得的光谱特性表明,半导体激光器的工作波长可以很好地稳定在体布拉格光栅的布拉格波长处。与该激光器在同样条件下自由运转的光谱比较,可以看到,自由运转激射波长与体布拉格光栅的布拉格波长差值小于2.6 nm情况下,可以获得很好的波长稳定效果。实验也表明,当该值大于4.8 nm时波长稳定效果变差。     

A Micro Blue-violet Laser by Frequency Doubling of Semiconductor Laser

In this paper, a micro blue-violet laser by frequency doubling of a semiconductor laser with a new nonlinear organometallic complex cadmium mercury thiocyanate crystal (CMTC) is reported. At room temperature, the blue-violet laser output of 11.8 mW at 404 nm and the conversion4efficiency of the second harmonic generation (SHG) of 0. 60% were obtained with a 1. 98 W, 808 nm semiconductor laser and a 4 mm crystal.     

间隔可调多波长光纤激光器的实验研究

半导体光放大器(SOA)的非均匀加宽特性对产生多波长激光非常有利。本文对两段式立奥-萨尼亚克(Lyot-Sagnac)滤波器进行了详细的理论分析,实现了一种基于半导体光放大器的新型多波长光纤激光器。它利用立奥-萨尼亚克滤波器的波长选择性,在室温下得到了约18个具有30 dB信噪比的多波长激光输出。波长范围1556~1577 nm。通过调节立奥-萨尼亚克环内的偏振控制器,多波长激光的波长间隔可在两种国际电信联盟(ITU)标准波长间隔(0.4 nm和0.8 nm)间选择。这种构型的光纤激光器具有稳定性好、波长间隔可控、信噪比高等优点。     

程控宽带连续调谐外腔半导体激光器特性分析

对宽带调谐外腔半导体激光器进行了理论及实验研究,分析了其最大调谐范围和连续调谐条件,为宽带可调谐激光器的设计提供了依据。完成了实用化的程控宽带连续调上腔激光器,该器件调谐范围超过７５ｎｍ,波长重复性精度为１ｎｍ,分辨率为０．０１ｎｍ。     

A Semiconductor Laser of the Visible Range as an Exciting Source of Raman Scattering

A possibility of application of semiconductor lasers of the visible range as exciting sources for Raman spectroscopy is studied. An experimental set-up for measuring Raman spectra of polycrystalline dielectrics and broad-gap semiconductors excited by a semiconductor laser with a wavelength of 640 nm was created. The conditions under which the spectral width of the lasing line of a semiconductor laser was within 10^-3 cm^-1 in the continuous mode with a power of 10 mW are realized. The characteristics of various types of exciting sources used in Raman spectroscopy are compared. The results of studies of the characteristic Raman spectra excited with a semiconductor laser in polycrystalline sulfur are presented.     

Femtosecond mode-locked holmium fiber laser pumped by semiconductor disk laser

We report on a 2085 nm holmium-doped silica fiber laser passively mode-locked by semiconductor saturable absorber mirror and carbon nanotube absorber. The laser, pumped by a 1.16 μm semiconductor disk laser, produces 890 femtosecond pulses with the average power of 46 mW and the repetition rate of 15.7 MHz.     

Speckle control using high-frequency signal superposition to semiconductor laser

Speckle contrast of images generated by a red semiconductor laser was measured precisely utilizing a state-of-the-art speckle measurement system with a cooled CCD camera with auto-light-power-level adjustments. By using high-frequency signal (～500 MHz) superposition to the single-mode semiconductor laser, the 3 dB spectrum of the laser beam was broadened from 0.1 to 2.3 nm. As a result, the speckle contrast value was drastically reduced from 0.9 to 0.2.     

Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

A KGd(WO?)? Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5.6 W of absorbed diode pump power, and output power up to 0.8 W at 1143 nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157 nm.     

Coherent bisection of 141 THz using sum frequency generation of 1064 and 709 nm radiation

The frequency interval (141 THz) that exists between 1064 nm radiation and the unusual semiconductor wavelength of 709 nm has been coherently divided by using an optical phase-locked loop to control a slave laser lying at the mean frequency of these two wavelengths. The 709 nm radiation has been generated by a combination of wavelength tuning in an extended cavity and temperature tuning of a ridge-waveguide semiconductor laser with a nominal wavelength of 728 nm. Two nonlinear processes have been used to produce the coherent division: the sum frequency mixing of 1064 and 709 nm radiation to produce 425 nm radiation and the second harmonic generation of 851 nm light to produce the same wavelength radiation.     

115 kHz tuning repetition rate ultrahigh-speed wavelength-swept semiconductor laser

We demonstrate an ultrahigh-speed wavelength-swept semiconductor laser using a polygon-based wavelength scanning filter. With a polygon rotational speed of 900 revolutions per second, a continuous wavelength tuning rate of 9200 nm/ms and a tuning repetition rate of 115 kHz were achieved. The wavelength tuning range of the laser was 80 nm centered at 1325 nm, and the average polarized output power was 23 mW.     

低阈值852nm半导体激光器的温度特性

通过金属有机化学气相淀积(MOCVD)和半导体后工艺技术制备了852 nm半导体激光器,它在室温下的阈值电流为57.5 m A,输出的光谱线宽小于1 nm。测试分析了激光器的输出光功率、阈值电流、电压、输出中心波长随温度的变化。测试结果表明,当温度变化范围为293~328 K时,阈值电流的变化速率为0.447m A/K,特征温度T0为142.25 K,输出的光功率变化率为0.63 m W/K。通过计算求得理想因子n为2.11,激光器热阻为77.7 K/W,中心波长漂移速率是0.249 29 nm/K,实验得出的中心波长漂移速率与理论计算结果相符。实验结果表明,该半导体器件在293~303 K的温度范围内,各特性参数能够保持相对良好的状态。器件如果工作在高温环境,需要添加控温设备以保证器件在良好状态下运行。     

Raman fiber laser pumped by a semiconductor disk laser and mode locked by a semiconductor saturable absorber mirror

A 1.6μm mode-locked Raman fiber laser pumped by a 1480nm semiconductor disk laser is demonstrated. Watt-level core pumping of the single-mode fiber Raman lasers with low-noise disk lasers together with semiconductor saturable absorber mirror mode locking represents a highly practical solution for short-pulse operation.