掺杂偶氮化合物的PMMA光折变聚合物的拉曼光谱分析

光折变聚合物具有良好的光折变效应,采用以惰性聚合物PMMA为基体,掺杂偶氮化合物染料的光折变聚合物具有较好的光学非线性和稳定性。文章主要介绍使用激光拉曼光谱仪对合成聚合物的各单体和聚合物薄膜进行拉曼光谱扫描,对比分析各个单体成分的特征谱峰与聚合物薄膜特征谱峰,肯定了实验中得到的光折变聚合物薄膜与理论上要求得到的一致性。     

掺杂浓度与溶剂对偶氮聚合物薄膜全光开关

用重复旋转涂膜法制备了乙基红(ER)偶氮染料与聚甲基丙烯酸甲酯(PMMA)掺杂聚合物薄膜和乙基橙(EO)与聚乙烯醇(PVA)掺杂聚合物薄膜.测量了两种聚合物薄膜样品全光开关特性,比较分析了薄膜样品的掺杂浓度和溶剂对全光开关效应的影响,实验结果表明:增加掺杂浓度和溶剂,极性薄膜样品的全光开关效应增强且开关的本底信号增大,但对开关的响应速度影响很小;选择合适的掺杂浓度和强极性溶剂,在室温和几个mW的弱功率控制光条件下聚合物薄膜具有毫秒级开关响应时间和40%以上的开关调制深度,最大的调制深度达72%以上.     

聚合物薄膜中生色团分子间的相互作用对其宏观二阶非线性的影响

制备了3-(1,1-二氰基噻吩)-1-苯-4,5-二羟基-H-噻唑(DCNP)与聚醚醚酮(PEK-c)组成的主客掺杂聚合物薄膜,用Maker条纹法测量了不同掺杂浓度下薄膜的二阶非线性系数χ₃₃⁽²⁾.实验结果表明,聚合物中生色团的含量高到一定程度,其宏观二阶非线性随生色团含量的增加反而下降.本文在考虑聚合物中生色团分子相互作用的情况下,修正了聚合物宏观二阶非线性与生色团的含量之间的关系,此时聚合物宏观二阶非线性与生色团的含量已非简单的正比关系.讨论了生色团分子间 关键词：     

硅掺杂辉光放电聚合物薄膜的热稳定性研究

采用等离子体辉光放电聚合技术,在不同四甲基硅烷(TMS)流量条件下制备了硅掺杂辉光放电聚合物(Si-GDP)薄膜,采用傅里叶变换红外光谱、X射线光电子能谱和热重(TG)分析技术分析了不同TMS流量对Si-GDP薄膜结构与热稳定性的影响.结果表明:随着TMS流量在0–0.06 cm³/min范围变化,Si-GDP薄膜中Si的原子含量C_Si为0–16.62%;含Si红外吸收峰的相对强度随TMS流量的增加而明显增大;Si-GDP薄膜的TG分析显示,温度在300 ℃时,随TMS流量的增加,Si-GDP薄膜的失重减少,热稳定性增强. 关键词： 硅掺杂辉光放电聚合物薄膜 X射线光电子能谱 热稳定性     

基于聚合物共混的有机场效应晶体管光电性能研究

采用聚合物共混的方法制备了体异质结薄膜,将其作为光敏半导体层制备了有机场效应光晶体管.利用原子力显微镜表征了共混薄膜的分相情况,探究了器件提高激子解离效率的机理,并对比了聚合物共混前后有机场效应晶体管的光电性能变化和相分离情况.结果表明：制备的聚合物共混光晶体管在微弱光线条件下(0.038 mW/cm²,808 nm)具有较高的光敏性(为10⁶).通过共混聚合物半导体材料制备体异质结薄膜可以有效地提高激子解离的效率,通过双层绝缘层能进一步降低光晶体管的暗电流,从而提高器件的光敏性.     

简单反射法测量聚合物薄膜线性电光系数的研究

简单反射法是电光聚合物薄膜研究中测量线性电光系数(Pockels系数)的一种简单而常采用的方法,但文献中关于在调制电场作用下s光和p光光程差和位相差改变的计算有不尽完善之处,线性电光系数的表达结果也不尽相同.在充分考虑各种因素的情况下,对该方法给出了合理的理论处理,得出了简单反射法更为严格的线性电光系数表达式.并测量对比了几种聚合物线性电光系数的结果.讨论了简单反射法测量聚合物薄膜线性电光系数的局限性.     

低玻璃化转变温度的光折变聚合物中光敏剂作用研究

通过对光敏剂C₆₀含量不同的低玻璃化转变温度的光折变聚合物聚乙烯咔唑掺杂2,5-二甲基-4-(4′-硝基苯偶氮基)苯甲醚、N-乙基咔唑和C₆₀的空间相移角和二波耦合系数的测量,研究了光敏剂在此类光折变聚合物中的作用- 关键词：     

基于多形貌银纳米颗粒的多波长相干随机激光研究

采用溶剂热法分别制备了球形银纳米颗粒和多形貌银纳米颗粒,其中球形银纳米颗粒具有400 nm的窄带等离激元共振峰,而多形貌银纳米颗粒的共振区间在400～700 nm之间,将它们分别掺入R6G与PVP的混合溶液中,利用旋涂法在玻璃基板上制备银纳米颗粒嵌入染料掺杂聚合物薄膜随机激光器。采用纳秒脉冲激光进行随机激光泵浦实验,实验结果表明球形银纳米颗粒染料掺杂聚合物薄膜只有自发辐射峰,而多形貌银纳米颗粒染料掺杂聚合物薄膜具有线宽<0.8 nm的相干随机激光发射光谱,其阈值为1.9 mJ·cm-2, 这可能是由于银纳米颗粒的等离激元共振区间与R6G的发射光谱重叠,支持局域等离激元效应的形成,明显的局域场增强有效地改善了与附近分子的相互作用,从而激发了更多的辐射光子,促进了高增益的形成。进一步,利用多形貌银纳米颗粒在银纳米颗粒染料掺杂聚合物薄膜中随机分布的特性,通过改变泵浦位置,实现了20 nm范围内的随机激光输出波长的调控,具体输出范围为590.1～610.4 nm。认为这是由于多形貌银纳米颗粒在不同位置的组成和分布不同,改变了表面等离激元的相互作用和光子的散射能力,从而形成不同的增益效应和不同的封闭光振荡路径。此外,考虑到多形貌银纳米颗粒的共振波长较宽,探究了其用于输出其他颜色光的可能性。以与上述银纳米颗粒R6G染料掺杂聚合物薄膜相似的制备方法,制备了多形貌银纳米颗粒掺杂DCJTB染料聚合物薄膜,并且进行随机激光泵浦实验。结果表明,可以有效的产生波长为675 nm,半高宽<0.8 nm的相干红光随机激光,并且阈值仅为0.98 mJ·cm-2。研究结果在宽带可调谐随机激光器研究以及多色随机激光器研究领域具有重要的参考价值。     

纳米晶聚合物复合薄膜PbTiO3-PEK-c的电光特性及其弛豫过程的研究

制备了掺杂型纳米晶聚合物钛酸铅聚醚醚酮 (PbTiO3 PEK c)复合薄膜 ,采用简单透射技术测量了该复合薄膜的线性电光系数 ,并研究了该复合薄膜的电光特性的弛豫过程     

紫外转化的PPV薄膜电致发光性质的研究

PPV是一种常用的高荧光效率的黄绿色的电致发光共轭聚合物,因为PPV不易溶解于有机溶剂,所以在有机电致发光(OLEDs)中PPV薄膜的制备通常是PPV的预聚体旋涂成膜,然后在高温、真空条件下转化成PPV薄膜。这种高温转化制膜的方法无法对其进行掺杂,限制了PPV在OLED中的应用。文章利用紫外光照射,PPV预聚体薄膜在室温和真空条件下转化成PPV薄膜,它与热处理得到的PPV薄膜的光致发光(PL)和拉曼(Raman)光谱一致;利用这种方法制备了非掺杂和红色荧光染料掺杂的有机电致发光器件,实现了以PPV为主体和能量给体的不同染料的掺杂发光,并获得绿色和橙色的电致发光。电致发光器件的发光效率和发光强度还有待进一步提高。     

Optical constants of thin oxide films on titanium

Thin oxide films on titanium formed by heating were studied by the ellipsometric method. To obtain the complex refractive index and film thicknesses, the ellipsometric measurements were performed by means of the immersing method: each sample was measured first in air and then in a liquid of known refractive index (in our case CCl₄). The optical constants and the oxide film thickness were computed by means of a computer from two pairs of ellipsometric values. To state the optical constants of clean titanium surface the graphic-computational method was proposed and applied. The measurements were carried out at two wavelengths on oxide films grown in air and dry oxygen by thermal oxidation at temperatures from 150 to 700 °C. It has been shown that when increasing the film thickness the refractive index of the film decreases, whereas the absorption coefficient is independent on the film thickness. Optical constants of oxide films growing in dry oxygen are smaller than those growing in air.     

Temperature effects on optical properties of InN thin films

Transmission measurements have been carried out on InN thin films grown by radio frequency magnetron sputtering on a sapphire (0001) substrate at 10–300 K. With the aid of a novel procedure developed for analyzing the transmission spectra, the effect of temperature on optical properties, such as the absorption coefficient, band-gap, Urbach bandtail characteristics, refractive index and extinction coefficient, of InN thin films has been determined. The wavelength and temperature dependence of the absorption coefficient in both the Urbach and intrinsic absorption regions has been described by a series of empirical formulae. The temperature dependence of the refractive index dispersion below the band-gap is also found to follow a Sellmeier equation. These formulae are very useful for the characterization and device design of InN films. The free-electron concentration in the InN thin film determined here is also found to be in good agreement with that obtained from infrared reflection measurements. PACS 78.66.Fd; 78.40.Fy; 78.20.Bh; 78.20.Ci     

Analysis of codeposited Gd2O3/SiO2 composite thin films by phase modulated spectroscopic ellipsometric technique

Tailoring of the refractive index of optical thin films has been a very fascinating as well as challenging topic for developing new generation optical coatings. In the present work a novel Gd₂O₃/SiO₂ composite system has been experimented and probed for its superior optical properties through phase modulated spectroscopic ellipsometry, spectrophotometry and atomic force microscopy. The optical parameters of the composite films have been evaluated using Tauc-Lorentz (TL) formulations. In order to derive the growth dependent refractive index profiles, each sample film has been modeled as an appropriate multilayer structure where each sub-layer was treated with the above TL parameterizations. All codeposited films demonstrated superiority with respect to the band gap and morphological measurements. At lower silica mixing compositions such as in 10-20% level, the composite films depicted superior spectral refractive index profile, band gap as well as the morphology. This aspect highlighted the fact that microstructural densifications in composite films can override the chemical compositions while deciding the refractive index and optical properties in such thin films.     

Synthesis and optical characterization of nanocrystalline CdTe thin films

From several years the study of binary compounds has been intensified in order to find new materials for solar photocells. The development of thin film solar cells is an active area of research at this time. Much attention has been paid to the development of low cost, high efficiency thin film solar cells. CdTe is one of the suitable candidates for the production of thin film solar cells due to its ideal band gap, high absorption coefficient. The present work deals with thickness dependent study of CdTe thin films. Nanocrystalline CdTe bulk powder was synthesized by wet chemical route at pH≈11.2 using cadmium chloride and potassium telluride as starting materials. The product sample was characterized by transmission electron microscope, X-ray diffraction and scanning electron microscope. The structural characteristics studied by X-ray diffraction showed that the films are polycrystalline in nature. CdTe thin films with thickness 40, 60, 80 and 100 nm were prepared on glass substrates by using thermal evaporation onto glass substrate under a vacuum of 10⁻⁶ Torr. The optical constants (absorption coefficient, optical band gap, refractive index, extinction coefficient, real and imaginary part of dielectric constant) of CdTe thin films was studied as a function of photon energy in the wavelength region 400–2000 nm. Analysis of the optical absorption data shows that the rule of direct transitions predominates. It has been found that the absorption coefficient, refractive index (n) and extinction coefficient (k) decreases while the values of optical band gap increase with an increase in thickness from 40 to 100 nm, which can be explained qualitatively by a thickness dependence of the grain size through decrease in grain boundary barrier height with grain size.     

Nanosecond surface interferometry measurements on designed and commercial polymers

The effect of the ablation mechanism on surface morphology changes during an ablation process was studied by comparing three different polymers: a triazene polymer, a polyimide and poly(methylmethacrylate) (PMMA) with nanosecond surface interferometry. The triazene polymer, for which only indications for a photochemical ablation mechanism had been detected in previous studies, revealed no surface swelling, which could be attributed to a thermal ablation mechanism. For polyimide, a photothermal ablation mechanism is usually used to describe the ablation process at irradiation wavelengths 248 nm. However, the interferometric measurements do not show any surface swelling, which would be a clear indication for a thermal ablation mechanism. A surface swelling was only detected for PMMA with irradiation at 248 nm and fluences below the threshold of permanent surface modification. The detected phase shift, which is proportional to the change of the film thickness and the refractive index, can be explained by the opposite signs of the thermal expansion coefficient and the thermal refractive-index coefficient. PACS 52.38.Mf; 42.87.Bg; 71.20.Rv     

Determination of the thickness and optical constants of amorphous Ge–Se–Bi thin films

The effect of varying bismuth concentration on the optical constants of amorphous Ge₂₀Se_{80? x} Bi _x (where x = 0, 3, 6, 9 and 12 at%) thin films prepared by thermal evaporation has been investigated. The transmission spectra T(λ) of the films at normal incidence were obtained in the spectral region from 400 to 2500 nm. An analysis proposed by Swanepoel [J. Phys. E: Sci. Instrum. 16 (1983) p.1214], based on the use of the maxima and minima of the interference fringes, was applied to derive the real and imaginary parts of the complex index of refraction and also the film thickness. Increasing bismuth content was found to affect the refractive index and extinction coefficient of the Ge₂₀Se_{80? x} Bi _x films. Optical absorption measurements show that the fundamental absorption edge is a function of composition. With increasing bismuth content, the refractive index increases while the optical band gap decreases.     

Thermal annealing effect of on optical constants of vacuum evaporated Se75S25−xCdx chalcogenide thin films

Chalcogenide glasses are interesting materials due to their infrared transmitting properties and photo induced effects exhibited by them. Thin films with thickness of 3000 Å of the glasses Se₇₅S_25−xCd_x with x=6, 8 and 10 at% prepared by melt quench technique were evaporated by thermal evaporation onto glass substrates under a vacuum of 10⁻⁶ Torr. The optical constants (absorption coefficient, refractive index and extinction coefficient) of as-prepared and annealed films have been studied as a function of photon energy in the wave length region 400-1000 nm. Analysis of the optical absorption data shows that the rule of non-direct transitions predominates. It has been found that the absorption coefficient and optical band gap increase with increasing annealing temperatures. The refractive index (n) and the extinction coefficient (k) were observed to decrease with increasing annealing temperature.     

Change in optical path length of saturable absorbing dye-doped polymer films under laser irradiation

The cause of the change in the optical path lengthΔ(nd) of the saturable absorbing dye-doped polymer films under laser irradiation is investigated using polyvinyl alcohol and gelatin films doped with erythrosin B. The temperature rise of the dye-doped films, the changes in optical path length, film thickness, the refractive index and the optical density of the dye-doped films are measured under laser irradiation. The thermal expansion due to the temperature rise of the dye-doped films caused by the irradiation has greater effect on theΔ(nd) than the fading of dye molecules due to the irradiation of laser beams.     

Characterization of evaporated selenide semiconductor alloy on p-type substrates

The properties of chalcogenides that are most important for applications as infrared transmitting materials are reported and their mutual relationships are given. Si₅Se₈₀In₁₅ films were produced by means of thermal evaporation. The refractive index and the optical energy gap were determined by transmission measurements. Parameters considered in this study are density, molar volume, transition temperatures, electrical properties, infrared transmission, extinction coefficient and refractive index. This composition has no extrinsic and intrinsic absorption between 14 and 20 μm and the value of absorption coefficient is estimated lower than 10⁻³ cm⁻¹ at 10.6 μm. This glass is also suitable for infrared optical elements. A p-n junction is observed due to evaporated thin film of alloy on p-type Ge substrate.     

Optical constants for Ge30− x Se70Ag x (0 ≤ x ≤ 30 at%) thin films based only on their reflectance spectra

In this paper, different homogenous compositions of Ge_{30? x} Se₇₀Ag _x (0?≤?x?≤?30 at%) thin films were prepared by thermal evaporation. Reflection spectra, R(λ), for the films were measured in the wavelength range 400–2500?nm. A straightforward analysis proposed by Minkov [J. Phys. D: Appl. Phys. 22 (1989) p.1157], based on the maxima and minima of the reflection spectra, allows us to derive the real and imaginary parts of the complex index of refraction and the film thickness of the studied films. Increasing Ag content at the expense of Ge atoms is found to affect the refractive index and the extinction coefficient of the films. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple–DiDomenico model. Optical absorption measurements were used to obtain the fundamental absorption edge as a function of composition. With increasing Ag content, the refractive index increases while the optical band gap decreases. The compositional dependence of the optical band gap for the Ge_{30? x} Se₇₀Ag _x (0?≤?x?≤?30) thin films is discussed in terms of the chemical bond approach.