Sub-1-V swing internal bus architecture for future low-power ULSIs

A bus architecture is proposed for reducing the operating power of future ULSIs. It uses new types of bus driver circuits and bus receiver circuits to reduce the bus signal swing while maintaining a low standby current. The bus driver circuit has a source offset configuration, achieved by the use of low-V_T MOSFETs and an internal supply voltage corresponding to the reduced signal swing. The bus receiver circuit has a symmetric configuration with two-level conversion circuits, each of which consists of a transmission gate and a cross-coupled latch circuit. Fast level conversion is achieved without increasing the standby current. The combination of the new bus driver and receiver enables the bus swing to be reduced to one-third that of the conventional architecture while maintaining high-speed data transmission and a low standby current. A test circuit designed and fabricated using 0.3-μm processes verifies the operation of the proposed architecture. Further improvements in the speed performance are possible with device optimization     

Low-power and high-performance techniques in global interconnect signaling

In this article, two accurate and efficient approaches are proposed to optimize the power and delay of global interconnects in VLSI ICs. We modify the conventional buffer insertion and low swing methods for delay and power optimization of various lengths of the global interconnects. As such, we address non-equidistance buffer insertion (NEBI) and current-mode driver and receiver (CMDR) techniques along with our smart optimization procedure. It is shown that the optimized low swing CMDR technique is efficient for global interconnects of the length equal or longer than 5 mm, and the improved buffer insertion technique, NEBI, is a perfect choice for the short global interconnects. Additionally, a random search algorithm known as simulated annealing (SA), improved by an intelligent method using a piecewise linear and exponential cost function, is employed for optimization of the power and delay. To this end, we have implemented a smart CAD tool that works interactively with HSPICE to achieve accurate and reliable design results. For verification purposes, several circuits are designed and simulated in 0.25, 0.18, and 0.13 μm CMOS technologies. The simulation results verify a significant reduction in the power and delay of global interconnects compared to other methods in the literature.     

平板显示器驱动芯片高低电压转换电路

LCD、PDP、VFD等各类平板显示器已越来越受到人们关注与喜爱,但大多数平板显示器需要专用的功率驱动芯片来驱动其发光显示,各类专用功率驱动芯片又离不开高低电压转换电路,高低电压转换电路性能的好坏直接影响到驱动芯片的稳定性和功耗等。通过比较平板显示器驱动芯片的几种典型高低压转换电路,设计出一种带有电流源的CMOS型高低压转换电路,它具有最佳的性能指标,该电路不但可以为平板显示器驱动芯片使用,还可以作为其他各类驱动芯片的高低压转换模块使用,最后给出一种具体的平板显示驱动芯片高压CMOS器件结构。     

A 2-Gbaud 0.7-V swing voltage-mode driver and on-chip terminatorfor high-speed NRZ data transmission

A large-swing, voltage-mode driver and an on-chip termination circuit are presented for high-speed nonreturn-to-zero (NRZ) data transmission through a copper cable. The proposed driver with active pull-up and pull-down can generate a 700-mV signal to deliver a 2 Gbaud serial NRZ data stream. Low output impedance offered by simple negative-feedback resistors alleviates the detrimental effect of the parasitic capacitance by supplying fast current impulses. A proposed on-chip termination circuit provides termination impedance to a mid-supply termination voltage with the benefit of reduced parasitic capacitance and better termination characteristics compared with off-chip termination. The driver and termination circuits have been incorporated in a 2 Gbaud transceiver chip and fabricated in 0.35 μm CMOS technology. Measurements show a 1.4 V differential swing with a slew rate of 2.5 V/ns at the receiver output and a 65% reduction of reflection by the on-chip termination circuit with power consumption of 191 mW at 3.3 V supply     

A Low-Power 5-Gb/s Current-Mode LVDS Output Driver and Receiver with Active Termination

In this work, a novel circuit topology for a Low-Voltage Differential Signaling (LVDS) output driver with reduced power consumption is proposed. Also, a low-signal current version of the LVDS driver working with lower supply voltage is proposed along with a compatible differential current-mode receiver. Both the drivers and the receiver feature active-terminated ports that eliminate the need for a dedicated passive terminator for matching. An asymmetric impedance network on the output side of the driver selectively eliminates any reflections coming from the channel while providing a high output impedance to the outgoing signal. For a target signal swing at the receiver input, the proposed termination scheme helps to reduce the driver signal current to up to a third of the current required by a conventional LVDS driver using a passive termination at the output. The asymmetric impedance network consists of a scaled-down replica driver that drives a common drain stage acting as the load for the main driver. The proposed driver topology meeting all LVDS specifications has been implemented in 3.3-V thick-gate CMOS technology. Simulation results show an achievable data rate of 5 Gb/s while transmitting over a 7.5-in FR4 PCB backplane trace for a target BER of 10⁻¹⁵, with power consumption equal to 17.8 mW, which is 25% less than a conventional LVDS driver with passive source end termination producing the same voltage swing at the receiver input. The low-current version of the driver has been implemented in 0.18-μm 1.8-V digital CMOS technology and shows similar performance over the same channel with a power consumption of 4.5 mW.     

A 4-Gb/s/pin low-power memory I/O interface using 4-level simultaneous bi-directional signaling

This paper presents a simultaneous bi-directional (SBD) 4-level I/O interface for high-speed DRAMs. The data rate of 4 Gb/s/pin was demonstrated using a 500-MHz clock generator and a full CMOS rail-to-rail power swing. The power consumed by the I/O circuit was measured to be 28 mW/pin, when connected to a 10-pF load, at a 1.8-V supply voltage. The transmitter uses a 4-level push-pull linear output driver and a 4-level automatic impedance controller, achieving the reduction of driver currents and the voltage margin as large as 200 mV. The receiver employs a hierarchical sampling scheme, wherein a differential amplifier selects three out of six reference voltage levels. This scheme ensures minimized sampling power and a wide common-mode sampling range. The 6-level reference voltage for sampling is generated by the combination of the transmitter replica. The proposed I/O interface circuits are fabricated using a 0.10-/spl mu/m, 2-metal layers DRAM process, and the active area is 330 /spl times/ 66 /spl mu/m/sup 2/. It exhibits 200 mV /spl times/ 690 ps eye windows on the given channel with a 1.8-V supply voltage.     

Power minimization and technology comparisons for digitalfree-space optoelectronic interconnections

This paper investigates the design optimization of digital free-space optoelectronic interconnections with a specific goal of minimizing the power dissipation of the overall link, and maximizing the interconnect density. To this end, we discuss a method of minimizing the total power dissipation of an interconnect link at a given bit rate. We examine the impact on the link performance of two competing transmitter technologies, vertical cavity surface emitting lasers (VCSELs) and multiple quantum-well (MQW) modulators and their associated driver-receiver circuits including complementary metal-oxide-semiconductor (CMOS) and bipolar transmitter driver circuits, and p-n junction photodetectors with multistage transimpedance receiver circuits. We use the operating bit-rate and on-chip power dissipation as the main performance measures. Presently, at high bit rates (>800 Mb/s), optimized links based on VCSELs and MQW modulators are comparable in terms of power dissipation. At low bit rates, the VCSEL threshold power dominates. In systems with high bit rates and/or high fan-out, a high slope efficiency is more important for a VCSEL than a low threshold current. The transmitter driver circuit is an important component in a link design, and it dissipates about the same amount of power as that of the transmitter itself. Scaling the CMOS technology from 0.5 μm down to 0.1 μm brings a 50% improvement in the maximum operating bit rate, which is around 4 Gb/s with 0.1 μm CMOS driver and receiver circuits. Transmitter driver circuits implemented with bipolar technology support a much higher operating bandwidth than CMOS technology; they dissipate, however, about twice the electrical power. An aggregate bandwidth in excess of 1 Tb/s-cm² can be achieved in an optimized free-space optical interconnect system using either VCSELs or MQW modulators as its transmitters     

Data-dependent logic swing internal bus architecture forultralow-power LSI's

A reduced-swing internal bus scheme is proposed for achieving ultralow-power LSI's. The proposed data-dependent logic swing bus (DDL bus) uses charge sharing between bus wires and an additional bus wire to reduce its voltage swing. With this technique, the power dissipation of the proposed bus is reduced to 1/16 that of a conventional bus when used for a 16-b-wide bus. In addition, a dual-reference sense-amplifying receiver (DRSA receiver) has been developed to convert a reduced-swing bus signal to a CMOS-level signal without loss of noise margin or speed. Experimental circuits fabricated using 0.5-μm CMOS process verify the low-power operation of the proposed bus at an operating frequency of 40 MHz with a supply voltage of 3.3 V     

Full-swing BiCMOS logic circuits with complementaryemitter-follower driver configuration

Various full-swing BiCMOS logic circuits with complementary emitter-follower driver configurations are described. The performance of the circuits is demonstrated in a 1.2 μm complementary BiCMOS technology with a 6 GHz n-p-n and a 2 GHz p-n-p transistor. For the basic circuit, gate delay (fan-in=2, fan-out=1) is 366 ps and driving capability is 288 ps/pF at 4 V. Delay-power tradeoffs that depend on characteristics of the clamping diode between two base nodes of the complementary emitter-follower driver, parasitic capacitances at the two base nodes, and a technique that can be used to achieve full swing have been identified for these circuits. These circuits show leverage over the conventional BiCMOS circuit for reduced power-supply voltages     

Design and characterization of a CMOS off-chip driver/receiver withreduced power-supply disturbance

A CMOS off-chip signal driver that achieves a 2.5-3 times smaller di/dt noise than the conventional design while not incurring the penalty of signal delay is described. It minimizes L di/dt effects by reducing the output signal swing by about a factor of 2 and by providing a controlled ramp rate for the output current. The circuit has a nearly constant output resistance for source termination of transmission lines, and includes a receiver designed for the smaller signal swing. Simulations show a driver-receiver delay of 3 ns for a 7.5-cm line on a multichip package with a peak di/dt of only 12 mA/ns. Driver-receiver delay and noise measurements are also presented     

Exploring the design space of mixed swing quadrail for low-powerdigital circuits

This paper describes and explores the design space of a mixed voltage swing methodology for lowering the energy per switching operation of digital circuits in standard submicron complementary metal-oxide-semiconductor (CMOS) fabrication processes. Employing mixed voltage swings expands the degrees of freedom available in the power-delay optimization space of static CMOS circuits. In order to study this design space and evaluate the power-delay tradeoffs, analytical polynomial formulations for power and delay of mixed swing circuits are derived and HSPICE simulation results are presented to demonstrate their accuracy. Efficient voltage scaling and transistor sizing techniques based on our analytical formulations are proposed for optimizing energy/operation subject to target delay constraints; up to 2.2× improvement in energy/operation is demonstrated for an ISCAS'85 benchmark circuit using these techniques. Experimental results from HSPICE simulations and measurements from an And-Or-Invert (AO1222) test chip fabricated in the Hewlett-Packard 0.5 μm process are presented to demonstrate up to 2,92× energy/operation savings for optimized mixed swing circuits compared to static CMOS     

中功率Ku波段光纤延迟线

介绍了光纤延迟线的工作原理.详细叙述了中功率Ku波段光纤延迟线的研制过程,其中包括:光发射模块、光接收模块、低噪声前置放大器、中功率线性放大器的研制及整个系统链路的设计链接调试等.最后给出了中功率Ku波段光纤延迟线的测试结果.     

High Speed and Low Energy Capacitively Driven On-Chip Wires

We present circuits for driving long on-chip wires through a series capacitor. The capacitor improves delay through signal pre-emphasis, offers a reduced voltage swing on the wire for low energy without a second power supply, and reduces the driven load, allowing for smaller drivers. Sidewall wire parasitics used as the series capacitor improve process tracking, and twisted and interleaved differential wires reduce both coupled noise as well as Miller-doubled cross-capacitance. Multiple drivers sharing a target wire allow simple FIR filters for driver-side pre-equalization. Receivers require DC bias circuits or DC-balanced data. A testchip in a 180 nm, 1.8 V process compared capacitively-coupled long wires with optimally-repeated full-swing wires. At a 200 mV swing, we measured energy savings of 3.8x over full-swing wires. At a 50 mV swing, we measured energy savings of 10.5x. Throughput on a 14 mm wire experiment due to capacitor pre-emphasis improved 1.7x using a 200 mV swing.     

On the design and optimization of symmetric low swing to high swing level converter for on-chip interconnects

This paper reports a series of symmetric high performance, low to full swing level converters (udld1-converter to udld5-converter) for recovering signal levels at the receiver end of the global interconnects with large capacitive loads. The proposed udld5-converter provides a matching receiver for the up-down low swing voltage driver (UDLD) signaling style for driving the global interconnect lines. When implemented on 0.13 μm CMOS 1.2 V technology, the udld5-converter performs 16% faster, reduces the energy per switching event by 4%, the energy-delay product by 19%, and the active area by 10%, when compared with a counterpart up low swing voltage driver (ULD) level converter (uld-converter). The proposed level converter receivers, each provide a different performance energy saving trade off. The paper also provides comparative performance evaluation of the various proposed level converters and uld-converter.     

Power Efficient Gigabit Communication Over Capacitively Driven RC-Limited On-Chip Interconnects

This paper presents a set of circuit techniques to achieve high data rate point-to-point communication over long on-chip RC-limited wire-pairs. The ideal line termination impedances for a flat transfer function with linear phase (pure delay) are derived, using an s-parameter wire-pair model. It is shown that a driver with series capacitance on the one hand and a resistive load on the other, are fair approximations of these ideal terminations in the frequency range of interest. From a perspective of power efficiency, a capacitive driver is preferred, as the series capacitance reduces the voltage swing along the line which reduces dynamic power consumption. To reduce cross-talk and maintain data integrity, parallel differential interconnects with alternatingly one or two twists are used. In combination with a low offset dynamic sense amplifier at the receiver, and a low-power decision feedback equalization technique with analog feedback, gigabit communication is demonstrated at very low power consumption. A point-to-point link on a 90 nm CMOS test chip achieves 2 Gb/s over 10 mm long interconnects, while consuming 0.28 pJ/bit corresponding to 28 fJ/bit/mm, which is much lower than competing designs.      

A reduced clock-swing flip-flop (RCSFF) for 63% power reduction

A reduced clock-swing flip-flop (RCSFF) is proposed, which is composed of a reduced swing clock driver and a special flip-flop which embodies the leakage current cutoff mechanism. The RCSFF can reduce the clock system power of a VLSI down to one-third compared to the conventional flip-flop. This power improvement is achieved through the reduced clock swing down to 1 V. The area and the delay of the RCSFF can also be reduced by a factor of about 20% compared to the conventional flip-flop. The RCSFF can also reduce the RC delay of a long RC interconnect to one-half     

Half-swing clocking scheme for 75% power saving in clockingcircuitry

We propose a half-swing clocking scheme that allows us to reduce power consumption of clocking circuitry by as much as 75%, because all the clock signal swings are reduced to half of the LSI supply voltage. The new clocking scheme causes quite small speed degradation, because the random logic circuits in the critical path are still supplied by the full supply voltage. We also propose a clock driver which supplies half-swing clock and generates half V_DD by itself. We confirmed that the half-swing clocking scheme provided 67% power saving in a test chip fabricated with 0.5 μm CMOS technology, ideally 75%, in the clocking circuitry, and that the degradation in speed was only 0.5 ns by circuit simulation. The key to the proposed clocking scheme is the concept that the voltage swing is reduced only for clocking circuitry, but is retained for all other circuits in the chip. This results in significant power reduction with minimal speed degradation     

Low Power and High Speed Multi Threshold Voltage Interface Circuits

Employing multiple supply voltages (multi- V_DD) is an effective technique for reducing the power consumption without sacrificing speed in an integrated circuit (IC). In order to transfer signals among the circuits operating at different voltage levels specialized voltage interface circuits are required. Two novel multi-threshold voltage (multi-V_th) level converters are proposed in this paper. The new multi-V_th level converters are compared with the previously published circuits for operation at different supply voltages. When the circuits are individually optimized for minimum power consumption, the proposed level converters offer significant power savings of up to 70% as compared to the previously published circuits. Alternatively, when the circuits are individually optimized for minimum propagation delay, the speed is enhanced by up to 78% with the proposed voltage interface circuits in a 0.18- mum TSMC CMOS technology.     

Characteristics of driver and receiver circuits with a passivetransmission line in RSFQ circuits

We report simulated results of-rapid single flux quantum (SFQ) circuits having driver, receiver, and passive transmission lines for propagating SFQ pulses to investigate the design criteria. We have studied the equivalent input/output resistance of the driver/receiver in various bias conditions and found that the resistance is almost proportional to the bias current of the driver/receiver. Furthermore, we have proposed inserting a series resistor at the end of the superconducting passive transmission line (PTL) for avoiding undesirable flux trapping in the loop and for isolation in regard to the DC current. We also found that the reduction of the bias margin due to the resistance is rather small when the resistance is much smaller than the impedance of the PTL. An operating margin of more than 30% was obtained in the driver/receiver circuits including the PTL and the series resistor     

LVDS I/O interface for Gb/s-per-pin operation in 0.35-μm CMOS

This paper presents the design and the implementation of input/output (I/O) interface circuits for Gb/s-per-pin operation, fully compatible with low-voltage differential signaling (LVDS) standard. Due to the differential transmission technique and the low voltage swing, LVDS allows high transmission speeds and low power consumption at the same time. In the proposed transmitter, the required tolerance on the dc output levels was achieved over process, temperature, and supply voltage variations with neither external components nor trimming procedures, by means of a closed-loop control circuit and an internal voltage reference. The proposed receiver implements a dual-gain-stage folded-cascode architecture which allows a 1.2-Gb/s transmission speed with the minimum common-mode and differential voltage at the input. The circuits were implemented in a 3.3-V 0.35-μm CMOS technology in a couple of test chips. Transmission operations up to 1.2 Gb/s with random data patterns and up to 2 Gb/s in asynchronous mode were demonstrated. The transmitter and receiver pad cells exhibit a power consumption of 43 and 33 mW, respectively