Temperature dependence of twinning stress – Analogy between Cu–Ni–Al and Ni–Mn–Ga shape memory single crystals

Abstract

To obtain a direct non-magnetic analogy to Ni–Mn–Ga 10M martensite with highly mobile twin boundaries, we present the recalculation of twinning systems in Cu–Ni–Al martensite. In this approach, the twinning planes denoted as Type I, Type II and compound have similar orientations for both alloys (Ni–Mn–Ga and Cu–Ni–Al). In Cu–Ni–Al, compound twinning exhibits the twinning stress of 1 to 2 MPa comparable to twining stress of Ni–Mn–Ga. In contrast Type II twinning stress of Cu–Ni–Al is approximately 20 MPa, i.e. much higher than twinning stress for Type II in Ni–Mn–Ga (0.1 to 0.3 MPa). Similarly to Ni–Mn–Ga, the twinning stress of Type II in Cu–Ni–Al is temperature independent. Moreover, no temperature dependence was found also for compound twinning in Cu–Ni–Al.     

Local structure around Zn and Ga in solution‐processed In–Ga–Zn–O and implications for electronic properties

We study by X‐ray absorption spectroscopy the local structure around Zn and Ga in solution‐processed In–Ga–Zn–O thin films as a function of thermal annealing. Zn and Ga environments are amorphous up to 450 °C. At 200 °C and 450 °C, the Ga atoms are in a β‐Ga₂O₃ like structure, mostly tetrahedral gallium oxide phase. Above 300 °C, the Zn atoms are in a tetrahedral ZnO phase for atoms inside the nanoclusters. The observed formation of the inorganic structure above 300 °C may be correlated to the rise of the mobility for IGZO TFTs. The Zn atoms localized at the nanocluster boundary are undercoordinated with O. Such ZnO cluster boundary could be responsible for electronic defect levels. Such defect levels were put in evidence in the upper half of the band gap. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Structure, phase formation, and wetting behavior of BaO–SiO2–B2O3 based glass–ceramics as sealants for solid oxide fuel cells

In the present study, glasses from the three different compositional triangles in the BaO–B₂O₃–SiO₂ system with fixed B₂O₃/SiO₂ ratio and different BaO/SiO₂ molar ratios (designated as Ba32, Ba37, and Ba42) were prepared, and suitability of them as sealant in solid oxide fuel cells were investigated. Structure of the glasses was characterized with Raman spectroscopy. According to the results, the structure of the glass with 32 % molar BaO (Ba32) predominantly consisted of Q² structural species. In glasses with 37 and 42 % molar BaO (Ba37 and Ba42), with the substitution of SiO₂ by BaO, distribution of Qⁿ units widened, silicate glass network depolymerized, and concentration of Q¹ structural units increased at the expense of Q² units. X-ray diffraction analyses revealed that in samples Ba32 and Ba37, initially, Ba₃Si₅O₁₃ and Ba₅Si₈O₂₁ phases were crystallized, respectively, and it seemed they acted as the sites for the subsequent growth of BaSi₂O₅ phase. In contrast, the dominant phase in sample Ba42 was Ba₂Si₃O₈. Sintering, wetting, and crystallization behavior of the glasses were studied using hot-stage microscopy and differential thermal analysis, respectively. Delay in the crystallization accompanied by depolymerization of the structure led into deformation at lower temperatures and greater wettability on the steel for Ba37 glass. All the glasses wetted AISI430 alloy at temperatures higher than 1,000 °C.     

Non-stoichiometric zinc-ferrite spinel nanoparticles

When prepared as a bulk material, ZnFe₂O₄ has a normal spinel structure with Zn²⁺ incorporated almost exclusively at the tetrahedral lattice sites and Fe³⁺ at the octahedral sites ((Zn)[Fe₂]O₄). Due to its “rigid” structure, its composition is also closely defined at Zn²⁺/Fe³⁺ ≅ 0.5. However, when prepared as nanoparticles, a significant proportion of Zn can enter the zinc-ferrite structure at the octahedral sites, resulting in a flexibility of the composition. In this work, the non-stoichiometry of zinc-ferrite nanoparticles was studied as a function of the particle size. Nanoparticles with a narrow size distribution were synthesized using co-precipitation in water-in-oil microemulsions. The zinc-ferrite nanoparticles with a size of ~9 nm retained the single-phase spinel structure when Zn/Fe was between 0 and ~0.8. With a decrease in the particle size the compositional range of the zinc-ferrite spinel broadened. The process of structural rearrangement during the heating of the nanoparticles was also studied.

     

In–Ga–Zn–O MESFET with transparent amorphous Ru–Si–O Schottky barrier

Rectifying transparent amorphous Ru–Si–O Schottky contacts to In–Ga–Zn–O have been fabricated by means of reactive sputtering without any annealing processes nor semiconductor surface treatments. The ideality factor, effective Schottky barrier height and rectification ratio are equal to 1.6, 0.9 eV and 10⁵ A/A, respectively. Ru–Si–O/In–Ga–Zn–O Schottky barriers were employed as gate electrodes for In–Ga–Zn–O metal–semiconductor field‐effect transistors (MESFETs). MESFET devices exhibiting on‐to‐off current ratio at the level of 10³ A/A in a voltage range of 2 V, with subthreshold swing equal to 420 mV/dec were demonstrated. A channel mobility of 7.36 cm²/V s was achieved. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

A study of the microstructure,thermal properties and wetting kinetics of Sn–3Ag–<Emphasis Type="Italic">x</Emphasis>Zn lead-free solders

Microstructure, thermal properties and wetting kinetics of Sn–3Ag–xZn solders (x = 0.4, 0.6, 0.8, 1, 2 and 4 wt%) were systematically investigated. The results indicate that a small amount of Zn (Zn wt% ≤ 1 wt%) has a rather moderate effect on the microstructure morphology of the Sn–3Ag–xZn solders. The microstructures are composed of a β-Sn phase and the mixture of Ag₃Sn and ζ-AgZn particles. However, the β-Sn phase reduces its volume fraction in the entire microstructure and the intermetallic compounds population increases with the increasing of Zn content. The microstructure is dramatically changed with a further increase in the Zn content. The γ-AgZn phase is formed in a Sn–3Ag–2Zn solder. The ε-AgZn phase is formed in a Sn–3Ag–4Zn solder. The melting temperature and the undercooling of the Sn–3Ag–xZn solder alloys decrease with the increase in Zn content, reach to a minimum value when the content of Zn is 1 wt%, and then increase with further increase in Zn content. The Sn–3Ag–1Zn demonstrates the minimum value of 228.13 °C in the melting temperature and 13.87 °C in undercooling. The wetting kinetics of the main spreading stage features the power law of R ⁿ  ~ t (n = 1), which is controlled by chemical reactions at the triple line.     

Carrier tuning of type-I clathrate single crystals

A method to precisely control the carrier properties for single crystalline type-I clathrate is investigated. Polycrystalline samples are synthesized first according to the theoretical ratio for carrier control, and followed by Ga flux single crystal growth process. The composition of single crystals was determined by Inductively Coupled Plasma Atomic Emission Spectrometry (ICP), and the detailed structure was determined by using high-resolution X-ray diffraction. The carrier type and concentration can be tuned by changing the Ba/Ga composition for Ba₈Ga₁₆Ge₃₀ (BGG), while only n-type carrier can be achieved in Sr₈Ga₁₆Ge₃₀ (SGG). X-ray diffraction analysis shows that the different occupancy factors of the endohedral chemical species may be the reason for this carrier difference between BGG and SGG.     

Trace Metals Analysis of Legal and Counterfeit Cigarette Tobacco Samples Using Inductively Coupled Plasma Mass Spectrometry and Cold Vapor Atomic Absorption Spectrometry

ABSTRACT

A closed-vessel microwave-digestion method was developed for the determination of trace amounts of Be, V, Cr, Mn, Co, Ni, Cu, Zn, As, Se, Mo, Cd, Sb, Ba, Tl, and Pb by inductively coupled plasma mass spectrometry and Hg by cold-vapor atomic absorption spectrometry in cigarette tobacco samples. In order to gauge the effectiveness of the digestion procedure, recovery studies were conducted using solutions prepared from National Institute of Standards and Technology Standard Reference Material 1573a Trace Elements in Tomato Leaves and Polish Certified Reference Material Virginia Tobacco Leaves. Limits of detection were below 1 µg g^?1 for all elements studied. Samples from two genuine-brand and three counterfeit packs were analyzed. The mean amounts of Be, As, Mo, Cd, Sb, Tl, Pb, and Hg were higher in counterfeit cigarettes, while the amounts of V, Cr, Mn, Co, Cu, Zn, Se, and Ba were comparable among legal and counterfeit cigarettes; the amount of Ni was higher in the legal cigarettes. Evaluation of Be, As, Mo, Cd, Sb, Tl, Pb, and Hg with their potential hazards for smokers is briefly discussed.     

GaP低阻欧姆接触层的AES和SIMS分析

本文用AES和SIMS分析讨论了p-GaP与三层金属膜Pd/Zn/Pd形成良好欧姆接触层的性质.     

Synthesis and luminescent properties of hexagonal BaZnSiO4:Eu2+ phosphor

A green-emitting phosphor of hexagonal BaZnSiO₄:Eu²⁺ was prepared by a combustion-assisted synthesis method and an efficient green emission from ultraviolet to visible light was observed. The luminescence and crystallinity were investigated by using luminescence spectrometry and X-ray diffractometry. In the hexagonal structure of BaZnSiO₄:Eu²⁺ phosphor, Eu²⁺ ions occupy three different lattice sites by substitution for Ba²⁺ ions. Eu²⁺ ions on Ba (1) and Ba (2) sites gave emissions at about 505 nm while Eu²⁺ ions on Ba (3) sites showed an emission band at 403 nm. The excitation spectrum is a broad band extending from 260 to 465 nm, which matches the emission of ultraviolet light-emitting diodes. The critical quenching concentration of Eu²⁺ in BaZnSiO₄:Eu²⁺ phosphor is about 0.05 mol. The value of the critical transfer distance is calculated as 10.97 Å. The corresponding concentration quenching mechanism is verified to be the electric multipole–multipole interaction. The CIE coordinates of the optimized sample $\mathrm{Ba}_{0.95}\mathrm{ZnSiO}_{4}{:}\mathrm{Eu}_{0.05}^{2+}$ were calculated as (x,y)=(0.172,0.463).     

Structure,composition and optical properties of ZnO:Ga films electrodeposited on flexible substrates

Thin films of ZnO:Ga are electrodeposited on stainless steel from zinc chloride solutions containing gallium with a Ga/Zn molar ratio in the range 1–10%. The surface morphology, structure, composition, and the optical properties of these films are studied using SEM, XRD, EDX, XPS, photoluminescence and transmittance spectroscopy. Results reveal that films with embedded platelets can be grown with a Ga/Zn molar ratio up to 60%. In as-grown films, Ga is present in the form of oxide, hydroxide or hydroxychloride compounds which decompose by annealing. Films annealed at 400°C are composed only from ZnO and Ga₂O₃ phases. The incorporation of Ga in ZnO films does not make a considerable change in the optical transmittance and the photoluminescence properties of the films.     

Preparation and characterization of LiNi<Subscript>0.495</Subscript>M<Subscript>0.01</Subscript>Mn<Subscript>0.495</Subscript>O<Subscript>2</Subscript> (M = Zn,Co, and Y) for lithium ion batteries

Layered structured LiNi_0.5Mn_0.5O₂ and LiNi_0.495M_0.01Mn_0.495O₂ (M = Zn, Co, and Y) compounds were prepared by PVP (poly(vinyl pyrrolidone))-assisted sol-gel method, and their structural, morphological, vibrational, transport, and electrochemical properties were characterized by XRD, SEM, FTIR, Raman, AC impedance, and galvanostatic charge and discharge analysis. XRD patterns reveal that doping does not change the crystal structure of the LiNi_0.5Mn_0.5O₂ compound. SEM images show that the average size of the particle is in sub-micron ranges. The AC impedance studies shows an electrical conductivity of ～2.5 × 10^?7 S/cm for the parent compound. The introduction of Zn/Co/Y at equivalent sites increased the electrical conductivity by one order ～10^?6 S/cm. The compound LiNi_0.495Co_0.01Mn_0.495O₂ shows the highest electrical conductivity of 2.85 × 10^?6 S/cm and delivers a specific discharge capacity of 110 mAh/g at the end of the 25th cycle in the voltage window of 2.5–4.4 V for a current density of 30 mA/g.     

Electronic structure and local interactions on a S(100) 2×1 surface with submonolayer Ba overlayers

The electronic structure and ionization energy for the system Ba/Si(100)2×1 have been studied as functions of the submonolayer coverage. It is found that there is an energy gap in the surface states spectrum and that the Ba/Si(100)2×1 interface is semiconducting up to 1.5 monolayers of Ba. Two surface bands induced by Ba adsorption have been detected. The evolution of the spectrum with increasing degree of Ba coverage points to the existence of two nonequivalent “adsorption sites,” which differ in binding energy by 0.11 eV. The development of the Ba-induced bands is found to terminate at a coverage corresponding to the minimum ionization energy and close to one monolayer. The adsorption bond is shown to have a primarily covalent character. Zh. éksp. Teor. Fiz. 114, 2145–2152 (December 1998)     

Out-of-equilibrium Sm–Fe based phases

Structure and magnetic properties of nanocrystalline P6/mmm out-of-equilibrium precursors of hard magnetic R-3m Sm₂(Fe,M)₁₇C (M=Ga,Si,) and I4/mmm Sm(Fe,Co,Ti)₁₁ equilibrium phases, are presented. Their structure is explained with a model ground on the R_1???s T_5?+?2s formula (R=rare-earth, s=vacancy rate, T=transition metal) where s Sm atoms are statistically substituted by s transition metal pairs. The Rietveld analysis (RA) provides the stoichiometry of the precursors, 1:9 and 1:10, respectively precursor of 2:17 and 1:12 phases. The interpretation of the Mössbauer spectra of the 1:9 and 1:10 phases, is based on the correlation between δ and the Wigner–Seitz Cell volumes, calculated from the structural parameters. The δ behaviour of each crystallographic site versus Co content, defines the Co location while it confirms that of Si and Ga obtained by RA. Substitution occurs in 3 g site, whatever Co or M. The Sm(Fe,Co,Ti)₁₀ and Sm(Fe,M)₉C Curie temperature (T_c) are compared to those of the equilibrium phases, the effects of Fe substitution and C addition are discussed. The maximum μ ₀H_c is obtained for low M or Co content, for auto-coherent diffraction domain size ～30 nm. SmFe_8.75Ga_0.25C and SmFe_8.75Si_0.25C with T_c of 680 and 690 K, show respectively M_r and μ ₀H_c of 58 emu/g, 27 kOe and 95 emu/g, 15 kOe, values higher than those obtained for Sm₂(Fe,M)₁₇ carbides.     

Electric field gradients at 151Eu sites in GaN

The electric field gradients at Eu sites in GaN have been investigated in conversion electron Mössbauer spectroscopy (CEMS) in which ¹⁵¹Eu probe ions were implanted into an undoped GaN layer grown on a sapphire substrate. The sample was implanted with 120 keV ¹⁵¹Eu ions to a fluence of 1 × 10¹⁵, and annealed at 1,200 K. CEMS spectra of the ¹⁵¹Eu 21.6 keV transition were collected, of the GaN sample as well as of a Si sample implanted with overlapping profiles of ¹⁵¹Eu and O. The GaN spectra were fitted with two symmetric doublets, D1 and D2, with isomer shifts and quadrupole splittings of δ?=??0.27 mm/s (relative to Eu₂O₃), ΔE _Q?= 0.85 (3) mm/s; and δ?=?? 0.22 mm/s, ΔE _Q?= 2.90 (5) mm/s, respectively. D1 is attributed to Eu at substitutional Ga lattice sites; D2 to Eu at or near substitutional sites but with extensive lattice damage. The splittings of D1 and D2 correspond to quadrupole coupling frequency of 15 (2) and 50 (4) MHz, consistent with measurements of ⁶⁹Ga, ⁷¹Ga and ¹¹¹In in GaN.     

NiFe LDH-CoPc/CNTs as novel bifunctional electrocatalyst complex for zinc–air battery

A new type of composite electrocatalyst was designed and prepared with NiFe layered double hydroxides (LDHs) for oxygen evolution reaction (OER) and CoPc for oxygen reduction reaction (ORR) supported on carbon nanotubes (CNTs). The NiFe LDH–CoPc/CNT composite exhibits higher electrocatalytic activity and stability than the commercial precious metal catalyst Pd/C + Ru/C in 6 M KOH electrolyte. The resulting rechargeable Zn–air battery showed high discharge voltage at 195 mW cm^?2. The discharge voltage is around 1.08~0.95 V and the charge voltage is lower, 2.07 V, after the cycle of 300 h at 80 mA cm^?2, indicating that zinc–air battery possessed high reversibility and durability over long charge and discharge cycles.     

Magneto-crystalline properties of BaFe12−2x M x Sn x O19 (M = Sn, Ni, Zn) ferrite powders

BaFe_12?2x M _x Sn _x O₁₉ compounds, where M?=?Sn²⁺, Ni²⁺ or Zn²⁺ ions, were synthesized by mechanical milling and partially by citrate precursor methods. Analysis of magneto-crystalline structure has been carried out by Mössbauer spectroscopy. The Sn⁴⁺ ions replace Fe³⁺ ions on 2b and slightly on 2a?+?4f₁ sites, Zn²⁺ ions strongly prefer 4f₁ sites, Sn²⁺ ions prefer 4f₁ sites too and Ni²⁺ ions occupy 4f₂ and 12k or 2a sites. The magnetic properties were evaluated by the vibrating sample magnetometry and the thermomagnetic analysis. A large variation of the intrinsic coercivity H _c (330 to 78 kA/m) and of temperature coefficient of coercivity of ΔH _c /Δ? (0.39 to 0.22 kA/m°C) were achieved as a function of the (Zn–Sn) and (Sn–Sn) substitutions, respectively. The Curie temperature T _c decreased with the (Ni–Sn) substitution from 447 to 399°C.     

Binding Study of Phenformin with Bovine Serum Album Using a Combined Technique of Equilibrium Dialysis with Flow-Injection Chemiluminescence Detection

ABSTRACT

The interaction between phenformin hydrochloride and bovine serum albumin (BSA) was investigated by the methods of chemiluminescence combined with equilibrium dialysis technique. A novel N-bromosuccinimide (NBS)–eosin Y (EY) chemiluminescence (CL) method was established for the determination of phenformin. The mechanism of this chemiluminescence system was proposed. Optimization studies were performed to determine the phenformin. Under the optimal conditions, the CL intensity was linear for a phenformin concentration over the range of 4.6 × 10^?8 to 5.0 × 10^?5 g/mL. The detection limit was 1.5 × 10^?8 g/mL. The data obtained by the present equilibrium dialysis–CL system were analyzed using the Klotz plot and the Scatchard analysis. The results showed that the Klotz plot and the Scatchard plot are linear with good correlation coefficient, indicating that the phenformin has only one type of binding site on BSA. The binding parameters were the number of the binding sites n (1.02) and the estimated association constant K (2.66 × 10⁴ L/mol). The chemiluminescence system combined with equilibrium dialysis developed in this work demonstrated its use for determination of interaction between drug and protein by using relatively simple instrument.     

Control of tensile stress on inducing formation and tunability of (100) oriented Pb x Sr1−x TiO3 thin films

(100) Oriented Pb _x Sr_1?x TiO₃ (PSTO) thin films are prepared on indium tin oxide (ITO)/glass substrates by sol–gel technique while inserting doped PbTiO₃ (PTO)-inducing layer in between. The effect of tensile stress in PSTO on tunability and (100) orientation of the thin films was investigated using X-ray diffraction, scanning electron microscopy, transmission electron microscope, and atomic force microscope, respectively. Results show that PSTO thin film deposited on doped PTO has (100) oriented structure while it is randomly oriented when deposited directly on the ITO/glass substrate. Lattice mismatch between PSTO and PTO appears, in which the in-plane lattice constant c is 0.3922–0.3924 nm in the former and 4.02–4.07 nm in the latter, respectively, contributing tensile stress in the PSTO due to different lattice constants between them. The stress in the PSTO thin film is 3.04, 3.15, 3.59 and 4.47 GPa when the doped PTOs are Fe–PTO, Tb–PTO, Co–PTO and Zn–PTO, respectively. The orientation degrees of PSTO thin films are from 89.63, 90.31, 91.92 to 93.29 % with increasing stress of PSTO on Fe–PTO, Tb–PTO, Co–PTO and Zn–PTO, respectively. Tunabilities of the well-oriented PSTO thin films increase in ascending order of 63 < 65 < 69 < 73 % when induced by oriented PTO layers of Fe–PTO, Tb–PTO, Co–PTO and Zn–PTO, respectively, which is in accordance with the degree of (100) orientation appearing in the thin films. The high tunability appears in the PSTO thin film while high (100) orientation is derived from the tensile stress. It is much higher than that of randomly oriented PSTO thin film.     

Amount of valence charge of Al- and Zn-based quasicrystals and related approximant crystals evaluated by chemical shift observations and Bader analysis

The amounts of decreased charge at Al sites of Al-based (Al–Pd–Cr–Fe, Al–Si–Mn, and Al–Re–Si) and at Zn sites of Zn-based (Zn–Mg–Zr) quasicrystals and approximant crystals were estimated. The evaluation was done by comparisons between chemical shifts experimentally observed by soft-X-ray emission spectroscopy and the amount of valence charge obtained by Bader analysis for first principle calculations of reference materials (Al, α-Al₂O₃, Zn, and ZnO). Decreased charges at Al sites of Al-based quasicrystals and at Zn sites of Zn-based quasicrystals were evaluated to be 1.0–2.5 e^–/atom and 1.1–1.2 e^–/atom, respectively. A covalent bonding nature alloy of Al–Re–Si also showed a decrease in valence charge at Al sites.