Damascene Array Structure of Phase Change Memory Fabricated with Chemical Mechanical Polishing Method

A damascene structure of phase change memory （PCM） is fabricated successfully with the chemical mechanical polishing （CMP） method, and the CMP of Ge2Sb2Te5 （GST） and Ti films is investigated. The polished surface of wafer is analysed by scanning electron microscopy （SEM） and an energy dispersive spectrometer （EDS）. The measurements show that the damascene device structure of phase change memory is achieved by the CMP process. After the top electrode is deposited, dc sweeping test on PCM reveals that the phase change can be observed. The threshold current of array cells varies between 0.90mA and 1.15mA.     

Model of workpiece erosion for electrical discharge machining process

The previously published step-wise model (SWM) of cold electrodes erosion of electric arc heaters (EAHs) was modified for the calculation of workpiece removal rate (WRR) in electrical discharge machining (EDM) process. Modified model applies both relations the step-wise erosion model and the point heat source erosion model and takes into account the discharge current, the discharge pulse/pause time and thermophysical properties of machined material. The results of calculations show a reasonable agreement with data obtained experimentally by different authors about different materials and conditions.     

Ultrafast laser ablation for restoration of heritage objects

Powerful ultrafast laser pulses have a unique capability to ablate material from the surface without heat propagation into the bulk due to the non-linear nature of the laser-surface interaction. This quality offers a new application of ultrafast lasers for restoration of objects of art and heritage artefacts. We discuss the laser-based cleaning methods used in art restoration, analyse the potential advantages and challenges of using ultrafast laser pulses, and present new encouraging results on using ultrafast lasers in the field of heritage conservation.     

Deep InP Gratings for Opto-Electronic Devices Etched by C12/CH4/Ar Inductively Coupled Plasma

Deep InP gratings are etched by C12/CH4/Ar inductively coupled plasma （ICP） at room temperature. A comparison is made between SiNz mask patterns formed by wet and dry etching. SF6 reactive ion etching is adopted for smooth and vertical sidewall. The etching conditions of C12/CH4/Ar ICP are optimized for high anisotropy, and a 1.7-μm-deep InP grating with an aspect ratio of 10：1 is demonstrated. The technique is then used for the fabrication of 1.55-μm laterally coupled distributed feedback A1GMnAs-InP laser.