Defect Engineering of Graphene for Dynamic Reliability

The interface between two-dimensional (2D) materials and soft, stretchable polymeric substrates is a governing criterion in proposed 2D materials-based flexible devices. This interface is dominated by weak van der Waals forces and there is a large mismatch in elastic constants between the contact materials. Under dynamic loading, slippage, and decoupling of the 2D material is observed, which then leads to extensive damage propagation in the 2D lattice. Herein, graphene is functionalized through mild and controlled defect engineering for a fivefold increase in adhesion at the graphene-polymer interface. Adhesion is characterized experimentally using buckling-based metrology, while molecular dynamics simulations reveal the role of individual defects in the context of adhesion. Under in situ cyclic loading, the increased adhesion inhibits damage initiation and interfacial fatigue propagation within graphene. This work offers insight into achieving dynamically reliable and robust 2D material-polymer contacts, which can facilitate the development of 2D materials-based flexible devices.     

Strain-Engineered Anisotropic Optical and Electrical Properties in 2D Chiral-Chain Tellurium

Atomically thin materials, leveraging their low-dimensional geometries and superior mechanical properties, are amenable to exquisite strain manipulation with a broad tunability inaccessible to bulk or thin-film materials. Such capability offers unexplored possibilities for probing intriguing physics and materials science in the 2D limit as well as enabling unprecedented device applications. Here, the strain-engineered anisotropic optical and electrical properties in solution-grown, sub-millimeter-size 2D Te are systematically investigated through designing and introducing a controlled buckled geometry in its intriguing chiral-chain lattice. The observed Raman spectra reveal anisotropic lattice vibrations under the corresponding straining conditions. The feasibility of using buckled 2D Te for ultrastretchable strain sensors with a high gauge factor (≈380) is further explored. 2D Te is an emerging material boasting attractive characteristics for electronics, sensors, quantum devices, and optoelectronics. The results suggest the potential of 2D Te as a promising candidate for designing and implementing flexible and stretchable devices with strain-engineered functionalities.     

Fabrication and electrical characterization of circuits based on individual tin oxide nanowires

Two-?and four-probe electrical measurements on individual tin oxide (SnO(2)) nanowires were performed to evaluate their conductivity and contact resistance. Electrical contacts between the nanowires and the microelectrodes were achieved with the help of an electron-?and ion-beam-assisted direct-write nanolithography process. High contact resistance values and the nonlinear current-bias (I-V) characteristics of some of these devices observed in two-probe measurements can be explained by the existence of back-to-back Schottky barriers arising from the platinum-nanowire contacts. The nanoscale devices described herein were characterized using impedance spectroscopy, enabling the development of an equivalent circuit. The proposed methodology of nanocontacting and measurements can be easily applied to other nanowires and nanometre-sized materials.     

Graphene in the Design and Engineering of Next‐Generation Neural Interfaces

Neural interfaces are becoming a powerful toolkit for clinical interventions requiring stimulation and/or recording of the electrical activity of the nervous system. Active implantable devices offer a promising approach for the treatment of various diseases affecting the central or peripheral nervous systems by electrically stimulating different neuronal structures. All currently used neural interface devices are designed to perform a single function: either record activity or electrically stimulate tissue. Because of their electrical and electrochemical performance and their suitability for integration into flexible devices, graphene‐based materials constitute a versatile platform that could help address many of the current challenges in neural interface design. Here, how graphene and other 2D materials possess an array of properties that can enable enhanced functional capabilities for neural interfaces is illustrated. It is emphasized that the technological challenges are similar for all alternative types of materials used in the engineering of neural interface devices, each offering a unique set of advantages and limitations. Graphene and 2D materials can indeed play a commanding role in the efforts toward wider clinical adoption of bioelectronics and electroceuticals.     

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect Transistors

2D transition metal dichalcogenides (TMDCs) have emerged as promising candidates for post‐silicon nanoelectronics owing to their unique and outstanding semiconducting properties. However, contact engineering for these materials to create high‐performance devices while adapting for large‐area fabrication is still in its nascent stages. In this study, graphene/Ag contacts are introduced into MoS₂ devices, for which a graphene film synthesized by chemical vapor deposition (CVD) is inserted between a CVD‐grown MoS₂ film and a Ag electrode as an interfacial layer. The MoS₂ field‐effect transistors with graphene/Ag contacts show improved electrical and photoelectrical properties, achieving a field‐effect mobility of 35 cm² V^?1 s^?1, an on/off current ratio of 4 × 10⁸, and a photoresponsivity of 2160 A W^?1, compared to those of devices with conventional Ti/Au contacts. These improvements are attributed to the low work function of Ag and the tunability of graphene Fermi level; the n‐doping of Ag in graphene decreases its Fermi level, thereby reducing the Schottky barrier height and contact resistance between the MoS₂ and electrodes. This demonstration of contact interface engineering with CVD‐grown MoS₂ and graphene is a key step toward the practical application of atomically thin TMDC‐based devices with low‐resistance contacts for high‐performance large‐area electronics and optoelectronics.     

Recent Advances in Synthesis and Applications of 2D Junctions

Recent progress in the methods of integration of 2D materials is reviewed. Integrated 2D circuits are one of the most promising candidates for advanced electronics and flexible devices. Specifically, methods such as mechanical transfer, chemical vapor deposition growth, high temperature conversion, phase engineering, surface doping, electrostatic doping, and so on to fabricate 2D heterostructures are discussed in detail. Applications of these integrated 2D heterostructures in p–n junctions, ohmic contact, high‐performance transistors, and phototransistors are also highlighted. Finally, challenges and opportunities of methods to integrate 2D materials are proposed.     

Direct Growth of High Mobility and Low‐Noise Lateral MoS2–Graphene Heterostructure Electronics

Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all‐2D electronic circuitry. This study employs seed‐free consecutive chemical vapor deposition processes to synthesize high‐quality lateral MoS₂–graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS₂–graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS₂–metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS₂–graphene in‐plane heterostructures are promising materials for the scale‐up of all‐2D circuitry with superlative electrical performance.     

The Role of Graphene and Other 2D Materials in Solar Photovoltaics

2D materials have attracted considerable attention due to their exciting optical and electronic properties, and demonstrate immense potential for next‐generation solar cells and other optoelectronic devices. With the scaling trends in photovoltaics moving toward thinner active materials, the atomically thin bodies and high flexibility of 2D materials make them the obvious choice for integration with future‐generation photovoltaic technology. Not only can graphene, with its high transparency and conductivity, be used as the electrodes in solar cells, but also its ambipolar electrical transport enables it to serve as both the anode and the cathode. 2D materials beyond graphene, such as transition‐metal dichalcogenides, are direct‐bandgap semiconductors at the monolayer level, and they can be used as the active layer in ultrathin flexible solar cells. However, since no 2D material has been featured in the roadmap of standard photovoltaic technologies, a proper synergy is still lacking between the recently growing 2D community and the conventional solar community. A comprehensive review on the current state‐of‐the‐art of 2D‐materials‐based solar photovoltaics is presented here so that the recent advances of 2D materials for solar cells can be employed for formulating the future roadmap of various photovoltaic technologies.     

Toward Robust Macroscale Superlubricity on Engineering Steel Substrate

“Structural superlubricity” is an important fundamental phenomenon in modern tribology that is expected to greatly diminish friction in mechanical engineering, but now is limited to achieve only at nanoscale and microscale in experiment. A novel principle for broadening the structural superlubricating state based on numberless micro-contact into macroscale superlubricity is demonstrated. The topography of micro-asperities on engineering steel substrates is elaborately constructed to divide the macroscale surface contact into microscale point contacts. Then at each contact point, special measures such as pre-running-in period and coating heterogeneous covalent/ionic or ionic/ionic nanocomposite of 2D materials are devised to manipulate the interfacial ordered layer-by-layer state, weak chemical interaction, and incommensurate configuration, thereby satisfying the prerequisites responsible for structural superlubricity. Finally, the robust superlubricating states on engineering steel–steel macroscale contact pairs are achieved with significantly reduced friction coefficient in 10⁻³ magnitude, extra-long antiwear life (more than 1.0 × 10⁶ laps), and good universality to wide range of materials and loads, which can be of significance for the industrialization of “structural superlubricity.”     

Tailoring Surface Properties via Functionalized Hydrofluorinated Graphene Compounds

A new compound material of 2D hydrofluorinated graphene (HFG) is demonstrated whose relative hydrogen/fluorine concentrations can be tailored between the extremes of either hydrogenated graphene (HG) and fluorinated graphene (FG). The material is fabricated through subsequent exposures to indirect hydrogen plasma and xenon difluoride (XeF₂). Controlling the relative concentration in the HFG compound enables tailoring of material properties between the extremes offered by the constituent materials and in‐plane patterning produces micrometer‐scale regions with different surface properties. The utility of the technique to tailor the surface wettability, surface friction, and electrical conductivity is demonstrated. HFG compounds display wettability between the extremes of pure FG with contact angle of 95° ± 5° and pure HG with contact angle of 42° ± 2°. Similarly, the HFG surface friction may be tailored between the two extremes. Finally, the HFG electrical conductivity tunes through five orders of magnitude when transitioning from FG to HG. When combined with simulation, the electrical measurements reveal the mechanism producing the compound to be a dynamic process of adatom desorption and replacement. This study opens a new class of 2D compound materials and innovative chemical patterning with applications for atomically thin 2D circuits consisting of chemically/electrically modulated regions.     

Emerging Porous Two-Dimensional Materials: Current Status,Existing Challenges,and Applications

Two-Dimensional (2D) materials have attracted immense attention in recent years. These materials have found their applications in various fields, such as catalysis, adsorption, energy storage, and sensing, as they exhibit excellent physical, chemical, electronic, photonic, and biological properties. Recently, researchers have focused on constructing porous structures on 2D materials. Various strategies, such as chemical etching and template-based methods, for the development of surface pores are reported, and the porous 2D materials fabricated over the years are used to develop supercapacitors and energy storage devices. Moreover, the lattice structure of the 2D materials can be modulated during the construction of porous structures to develop 2D materials that can be used in various fields such as lattice defects in 2D nanomaterials for enhancing biomedical performances. This review focuses on the recently developed chemical etching, solvent thermal synthesis, microwave combustion, and template methods that are used to fabricate porous 2D materials. The application prospects of the porous 2D materials are summarized. Finally, the key scientific challenges associated with developing porous 2D materials are presented to provide a platform for developing porous 2D materials.     

2D Electrets of Ultrathin MoO2 with Apparent Piezoelectricity

Since graphene, a variety of 2D materials have been fabricated in a quest for a tantalizing combination of properties and desired physiochemical behavior. 2D materials that are piezoelectric, i.e., that allow for a facile conversion of electrical energy into mechanical and vice versa, offer applications for sensors, actuators, energy harvesting, stretchable and flexible electronics, and energy storage, among others. Unfortunately, materials must satisfy stringent symmetry requirements to be classified as piezoelectric. Here, 2D ultrathin single-crystal molybdenum oxide (MoO₂) flakes that exhibit unexpected piezoelectric-like response are fabricated, as MoO₂ is centrosymmetric and should not exhibit intrinsic piezoelectricity. However, it is demonstrated that the apparent piezoelectricity in 2D MoO₂ emerges from an electret-like behavior induced by the trapping and stabilization of charges around defects in the material. Arguably, the material represents the first 2D electret material and suggests a route to artificially engineer piezoelectricity in 2D crystals. Specifically, it is found that the maximum out-of-plane piezoresponse is 0.56 pm V⁻¹, which is as strong as that observed in conventional 2D piezoelectric materials. The charges are found to be highly stable at room temperature with a trapping energy barrier of ≈2 eV.     

Coulomb oscillations and Hall effect in quasi-2D graphite quantum dots

We perform low-temperature electrical transport measurements on gated, quasi-2D graphite quantum dots. In devices with low contact resistances, we use longitudinal and Hall resistances to extract carrier densities of 9.2-13 x 10(12) cm(-2) and mobilities of 200-1900 cm(2)/V.s. In devices with high resistance contacts, we observe Coulomb blockade phenomena and infer the charging energies and capacitive couplings. These experiments demonstrate that electrons in mesoscopic graphite pieces are delocalized over nearly the whole graphite piece down to low temperatures.     

Supramolecular Chiral 2D Materials and Emerging Functions

Chiral materials are widely applied in various fields such as enantiomeric separation, asymmetric catalysis, and chiroptical effects, providing stereospecific conditions and environments. Supramolecular concepts to create the chiral materials can provide an insight for emerging chiro-optical properties due to their well-defined scaffolds and the precise functionalization of the surfaces or skeletons. Among the various supramolecular chiral structures, 2D chiral sheet structures are particularly interesting materials because of their extremely high surface area coupled with many unique chemical and physical properties, thereby offering potential for the next generation of functional materials for optically active systems and optoelectronic devices. Nevertheless, relatively limited examples for 2D chiral materials exhibiting specific functionality have been reported because incorporation of molecular chirality into 2D architectures is difficult at the present stage. Here, a brief overview of the recent advances is provided on the construction of chiral supramolecular 2D materials and their functions. The design principles toward 2D chirality and their potential applications are also discussed.     

Tunable Tribotronic Dual‐Gate Logic Devices Based on 2D MoS2 and Black Phosphorus

With the Moore's law hitting the bottleneck of scaling‐down in size (below 10 nm), personalized and multifunctional electronics with an integration of 2D materials and self‐powering technology emerge as a new direction of scientific research. Here, a tunable tribotronic dual‐gate logic device based on a MoS₂ field‐effect transistor (FET), a black phosphorus FET and a sliding mode triboelectric nanogenerator (TENG) is reported. The triboelectric potential produced from the TENG can efficiently drive the transistors and logic devices without applying gate voltages. High performance tribotronic transistors are achieved with on/off ratio exceeding 106 and cutoff current below 1 pA μm^–1. Tunable electrical behaviors of the logic device are also realized, including tunable gains (improved to ≈13.8) and power consumptions (≈1 nW). This work offers an active, low‐power‐consuming, and universal approach to modulate semiconductor devices and logic circuits based on 2D materials with TENG, which can be used in microelectromechanical systems, human–machine interfacing, data processing and transmission.     

Many‐Body Complexes in 2D Semiconductors

2D semiconductors such as transition metal dichalcogenides (TMDs) and black phosphorus (BP) are currently attracting great attention due to their intrinsic bandgaps and strong excitonic emissions, making them potential candidates for novel optoelectronic applications. Optoelectronic devices fabricated from 2D semiconductors exhibit many‐body complexes (exciton, trion, biexciton, etc.) which determine the materials optical and electrical properties. Characterization and manipulation of these complexes have become a reality due to their enhanced binding energies as a direct result from reduced dielectric screening and enhanced Coulomb interactions in the 2D regime. Furthermore, the atomic thickness and extremely large surface‐to‐volume ratio of 2D semiconductors allow the possibility of modulating their inherent optical, electrical, and optoelectronic properties using a variety of different environmental stimuli. To fully realize the potential functionalities of these many‐body complexes in optoelectronics, a comprehensive understanding of their formation mechanism is essential. A topical and concise summary of the recent frontier research progress related to many‐body complexes in 2D semiconductors is provided here. Moreover, detailed discussions covering the aspects of fundamental theory, experimental investigations, modulation of properties, and optoelectronic applications are given. Lastly, personal insights into the current challenges and future outlook of many‐body complexes in 2D semiconducting materials are presented.     

Laser-Induced Phase Transition and Patterning of hBN-Encapsulated MoTe2

Transition metal dichalcogenides exhibit phase transitions through atomic migration when triggered by various stimuli, such as strain, doping, and annealing. However, since atomically thin 2D materials are easily damaged and evaporated from these strategies, studies on the crystal structure and composition of transformed 2D phases are limited. Here, the phase and composition change behavior of laser-irradiated molybdenum ditelluride (MoTe₂) in various stacked geometry are investigated, and the stable laser-induced phase patterning in hexagonal boron nitride (hBN)-encapsulated MoTe₂ is demonstrated. When air-exposed or single-side passivated 2H-MoTe₂ are irradiated by a laser, MoTe₂ is transformed into Te or Mo₃Te₄ due to the highly accumulated heat and atomic evaporation. Conversely, hBN-encapsulated 2H-MoTe₂ transformed into a 1T′ phase without evaporation or structural degradation, enabling stable phase transitions in desired regions. The laser-induced phase transition shows layer number dependence; thinner MoTe₂ has a higher phase transition temperature. From the stable phase patterning method, the low contact resistivity of 1.13 kΩ µm in 2H-MoTe₂ field-effect transistors with 1T′ contacts from the seamless heterophase junction geometry is achieved. This study paves an effective way to fabricate monolithic 2D electronic devices with laterally stitched phases and provides insights into phase and compositional changes in 2D materials.     

Recent Advances of Spatial Self‐Phase Modulation in 2D Materials and Passive Photonic Device Applications

Optical nonlinearity in 2D materials excited by spatial Gaussian laser beam is a novel and peculiar optical phenomenon, which exhibits many novel and interesting applications in optical nonlinear devices. Passive photonic devices, such as optical switches, optical logical gates, photonic diodes, and optical modulators, are the key compositions in the future all‐optical signal‐processing technologies. Passive photonic devices using 2D materials to achieve the device functionality have attracted widespread concern in the past decade. In this Review, an overview of the spatial self‐phase modulation (SSPM) in 2D materials is summarized, including the operating mechanism, optical parameter measurement, and tuning for 2D materials, and applications in photonic devices. Moreover, some current challenges are also proposed to solve, and some possible applications of SSPM method are predicted for the future. Therefore, it is anticipated that this summary can contribute to the application of 2D material‐based spatial effect in all‐optical signal‐processing technologies.     

1D and 2D Field Effect Transistors in Gas Sensing: A Comprehensive Review

Rapid progress in the synthesis and fundamental understanding of 1D and 2D materials have solicited the incorporation of these nanomaterials into sensor architectures, especially field effect transistors (FETs), for the monitoring of gas and vapor in environmental, food quality, and healthcare applications. Yet, several challenges have remained unaddressed toward the fabrication of 1D and 2D FET gas sensors for real-field applications, which are related to properties, synthesis, and integration of 1D and 2D materials into the transistor architecture. This review paper encompasses the whole assortment of 1D—i.e., metal oxide semiconductors (MOXs), silicon nanowires (SiNWs), carbon nanotubes (CNTs)—and 2D—i.e., graphene, transition metal dichalcogenides (TMD), phosphorene—materials used in FET gas sensors, critically dissecting how the material synthesis, surface functionalization, and transistor fabrication impact on electrical versus sensing properties of these devices. Eventually, pros and cons of 1D and 2D FETs for gas and vapor sensing applications are discussed, pointing out weakness and highlighting future directions.     

Evaluation of metal-nanowire electrical contacts by measuring contact end resistance

It is known, but often unappreciated, that the performance of nanowire (NW)-based electrical devices can be significantly affected by electrical contacts between electrodes and NWs, sometimes to the extent that it is really the contacts that determine the performance. To correctly understand and design NW device operation, it is thus important to carefully measure the contact resistance and evaluate the contact parameters, specific contact resistance and transfer length. A four-terminal pattern or a transmission line model (TLM) pattern has been widely used to measure contact resistance of NW devices and the TLM has been typically used to extract contact parameters of NW devices. However, the conventional method assumes that the electrical properties of semiconducting NW regions covered by a metal are not changed after electrode formation. In this study, we report that the conventional methods for contact evaluation can give rise to considerable errors because of an altered property of the NW under the electrodes. We demonstrate that more correct contact resistance can be measured from the TLM pattern rather than the four-terminal pattern and correct contact parameters including the effects of changed NW properties under electrodes can be evaluated by using the contact end resistance measurement method.