金刚石层厚度对复合片(PDC)残余应力的影响

 通过X射线应力测试和有限元分析相结合的方法,研究了金刚石层厚度对聚晶金刚石复合片（PDC）残余应力的影响,并根据实验测试结果推导出了PDC表面中心与边缘的应力随金刚石层厚度变化的关系式。随着金刚石层厚度由0.5 mm增加到2.0 mm,PDC表面中心的压应力从1 800 MPa下降至700 MPa左右,而边缘部分的应力逐渐由压应力转为拉应力。金刚石层加厚虽然对边缘部分的最大拉应力影响不大,但使PDC边缘拉应力区宽度由0.76 mm增加到了2.85 mm。金刚石层厚度的增加还使得PDC边缘界面附近y方向的最大拉应力和位于界面边缘处的最大剪应力显著加大,这是金刚石层较厚的PDC界面容易产生裂纹的主要原因。     

涂层界面结合强度检测研究（I）：涂层结合界面应力的理论分析

利用激光划痕测试法和弯曲应力理论，建立了涂层结合界面应力的理论模型，推导出结合界面剪应力、正应力和剥离应力分布公式，分析了结合界面应力产生的机理．理论分析结果表明，界面正应力主要集中在界面中心区域内，而在界面边缘附近，正应力迅速下降，在界面边缘处其值降为0；剪应力和剥离应力主要集中在界面边缘区域内，在远离界面边缘区域，剪应力和剥离应力则迅速下降；涂层中正应力和涂层厚度、基体厚度以及杨氏模量无关，界面间剪应力以及剥离应力随涂层厚度增加而增加，并且由涂层与基体厚度以及杨氏模量所共同决定．     

涂层界面结合强度检测研究(Ⅰ):涂层结合界面应力的理论分析

利用激光划痕测试法和弯曲应力理论，建立了涂层结合界面应力的理论模型，推导出结合界面剪应力、正应力和剥离应力分布公式，分析了结合界面应力产生的机理.理论分析结果表明，界面正应力主要集中在界面中心区域内，而在界面边缘附近，正应力迅速下降，在界面边缘处其值降为0；剪应力和剥离应力主要集中在界面边缘区域内，在远离界面边缘区域，剪应力和剥离应力则迅速下降；涂层中正应力和涂层厚度、基体厚度以及杨氏模量无关，界面间剪应力以及剥离应力随涂层厚度增加而增加，并且由涂层与基体厚度以及杨氏模量所共同决定.     

基于XRD的镀锌钝化膜残余应力试验研究

利用XRD技术测试了镀锌钝化膜结合界面的残余应力，同时通过电解抛光法检测了其厚度方向残余应力的分布规律，分析了残余应力对镀锌钝化膜结合强度的影响. 试验结果表明，镀锌钝化膜的残余应力均表现为压应力，并随着基体表面残余应力的增大而减小；钝化膜在2—10μm厚度方向的残应力为-274.5—-428.3MPa，其应力为梯度分布；镀锌钝化膜与基体的界面结合强度与其残余应力成反比，减小薄膜残余应力，有利于提高镀锌钝化膜与基体的结合强度. 关键词： X射线衍射法(XRD) 镀锌钝化膜 结合强度 残余应力     

X射线在金-硅界面剂量增强系数与金和硅厚度关系的模拟研究

用蒙特卡罗(Monte Carlo)方法计算不同能量的X射线在金-硅(Au-Si)界面处中产生的剂量增强系数（DEF）与金(Au)和硅(Si)厚度的关系.结果表明：界面一侧Si中的DEF与Au和Si的厚度有关。当Au厚度分别取1μm、2μm、4μm、8μm时,界面处最大剂量增强系数分别为：19.78、24.78、24.78、32.3,界面处的DEF随Au厚度的增加而增大;当Si厚度分别取1μm、2μm、4μm、8μm时,界面处最大剂量增强系数分别为：24.5、25.91、27.84、30.09,界面处的DEF随Si厚度的增加而增大.并且研究了Au为2μm、4μm时界面下不同位置处的DEF随能量的变化关系,界面处的DEF最大,离界面越远剂量增强效应越小.     

X射线在金-硅界面剂量增强系数与金和硅厚度关系的模拟研究

用蒙特卡罗(Monte Carlo)方法计算不同能量的X射线在金-硅(Au-Si)界面处中产生的剂量增强系数（DEF）与金(Au)和硅(Si)厚度的关系.结果表明：界面一侧Si中的DEF与Au和Si的厚度有关。当Au厚度分别取1μm、2μm、4μm、8μm时,界面处最大剂量增强系数分别为：19.78、24.78、24.78、32.3,界面处的DEF随Au厚度的增加而增大;当Si厚度分别取1μm、2μm、4μm、8μm时,界面处最大剂量增强系数分别为：24.5、25.91、27.84、30.09,界面处的DEF随Si厚度的增加而增大.并且研究了Au为2μm、4μm时界面下不同位置处的DEF随能量的变化关系,界面处的DEF最大,离界面越远剂量增强效应越小.     

界面原子扩散对SmCo/Fe交换弹簧双层膜磁性能影响的微磁学研究

本文通过三维微磁学数值模拟,研究了界面处原子扩散形成的界面层对易轴平行和垂直膜面取向SmCo/Fe双层膜磁性能的影响.当易轴取向平行膜面时,体系成核在第二象限.随着界面层厚度的增加,尽管剩磁逐渐减小,而成核场和钉扎场逐渐增加,以致最大磁能积先增加后减小,直至体系由交换弹簧磁体过渡到刚性磁体.当易轴取向垂直膜面时,随着界面层厚度的增加,体系成核由第一象限逐渐过渡到第二象限,虽然钉扎场从减小、不变到略有增加,但成核场和剩磁逐渐增加,导致最大磁能积逐渐增加.在退磁过程中,膜面内自旋偏转:易轴平行膜面取向系统显示了 flower态和C态的产生与消失的过程;而易轴垂直膜面取向系统显示了vortex态的产生与消失的过程.随着易轴平行膜面SmCo/Fe双层膜界面层中SmCo原子扩散比例的增加,成核场和钉扎场增加但剩磁减小,最大磁能积先增加后降低.当易轴两种取向时,对任一界面层厚度,成核场随界面交换耦合常数的增大而增大,这表明界面层的存在增强了硬磁/软磁层之间的交换耦合作用.本文建立的模型很好地模拟了相关的实验结果[2007 Appl. Phys. Lett. 91 072509].     

金刚石薄膜的结构特征对薄膜附着性能的影响

在不同实验条件下，用微波等离子体化学气相沉积设备在硬质合金(WC+6%Co)衬底上沉积了 具有不同结构特征的金刚石薄膜.用Raman谱表征薄膜的品质和应力，用压痕实验表征薄膜的 附着性能，考察了薄膜中sp²杂化碳含量、形核密度、薄膜厚度对薄膜附着性能 的影响.结 果表明：sp²杂化碳的缓冲作用使薄膜中sp²杂化碳的含量对薄膜中 残余应力有较大的影 响，从而使薄膜压痕开裂直径统计性地随sp²杂化碳含量的增加而减小；仅仅依 靠超声遗 留的金刚石晶籽提高形核密度并不能有效改变薄膜与硬质合金基体之间的化学结合状况，从 而不能有效提高薄膜在衬底上的附着性能；在薄膜较薄时，晶粒之间没有压应力的存在，开 裂直径并不明显随厚度增加而增加，只有当薄膜厚度增加到一定值，晶粒之间才有较强压应 力存在，开裂直径随厚度的增加而较为迅速地增加. 关键词： 金刚石薄膜 附着性能 2杂化碳')" href="#">sp²杂化碳 成核密度 薄膜厚度     

两种纤维增强复合材料与连续激光耦合规律

 利用双积分球-光电管系统，开展了不同厚度的芳纶纤维/环氧、碳纤维/环氧复合材料在不同强度（低于烧蚀阈值）的1.319 mm连续激光辐照下的能量耦合规律研究。结果表明：芳纶纤维/环氧复合材料的反射率、能量耦合率随材料厚度增加而增大，透射率随材料厚度增加而减小；在材料厚度一定时，反射率、透射率随激光强度增加而增大，能量耦合率随激光强度增加而减小；体吸收系数随材料厚度的增加而减小，激光强度的变化对其没有影响。碳纤维/环氧复合材料的反射率随激光强度增加而增大，能量耦合率随激光强度的增加而减小，材料厚度对反射率和能量耦合率的影响不大。     

附着铜膜的内应力及屈服强度

用X-射线衍射和热循环基片弯曲方法测量了附着在基体上纯铜膜的内应力和屈服强度。内应力为张应力且随工作气体（氩气）压强的增加而减小但随膜厚的增加而增加。钢基体上铜膜的张屈服强度与膜厚的倒数成反比。压屈服强度也同样依赖于膜厚，即膜越薄，压屈服强度越高。     

Erosion damage in diamond coatings by high velocity sand impacts

For a diamond-coated component, the shear stresses at the coating–substrate interface, generated by solid particle impingement, are known to affect interfacial integrity. If these stresses are of sufficient magnitude, coating-debonding caused by interfacial crack propagation can be initiated, which can later lead to catastrophic failure of the coating. This paper describes a set of experiments conducted on CVD diamond coatings at a constant particle impingement velocity (250 m/s), using sieved silica sand varying in diameter from 125 to 500 µm. The objective of this work was to examine the influence of the stress field on the integrity of the coating by varying the depth at which the maximum shear stress occurred. Detailed studies of the coating failure time with respect to the normalized depth of maximum shear stress show that particle impacts generating a maximum shear stress at, or close to, the coating–substrate interface results in rapid debonding of the coating. Coatings thick enough to contain the maximum shear stress within the coating and away from the interface exhibit the longest life when subjected to solid particle impacts. The results are also compared to other erosion studies and the differences between them are explained.     

Fracture and debonding behavior of coated brittle alumina layer on ductile aluminum substrate wire

The fracture and debonding behavior of the Al₂O₃ layer coated on a ductile aluminum substrate wire was studied experimentally and analytically. When tensile strain was applied, the brittle Al₂O₃ coating layer showed multiple cracking perpendicular to the tensile axis. After the multiple cracking, compressive fracture of the Al₂O₃ layer arose in the circumferential direction when the layer was thinner than around 30 μm, while interfacial debonding between the Al₂O₃ layer and aluminum substrate arose when it was thicker. Such a difference in behavior between thin and thick layers could be accounted for by the difference in the layer thickness-dependence of the tensile radial stress at the interface and the compressive hoop stress of the Al₂O₃ layer calculated by the finite element method; the former stress increases while the latter one decreases with increasing layer thickness.     

单层单晶石墨烯与柔性基底界面性能的实验研究

单晶石墨烯具有更优异的力学及电学性能,有望成为新一代柔性电子器件的核心材料.因此,有必要从实验的角度精细分析化学气相沉积法制得的大尺度单晶石墨烯与柔性基底复合结构的界面力学行为.本文通过显微拉曼光谱实验方法测量了不同长度的单层单晶石墨烯/PET(聚对苯二甲酸乙二醇酯)基底的界面力学性能参数及其在长度方向上界面边缘的尺度效应.实验给出了石墨烯在PET基底加载过程中与基底间黏附、滑移、脱黏三个界面状态的演化过程与应力分布规律.实验发现,单晶石墨烯与柔性基底间由范德瓦耳斯力控制的界面应变传递过程存在明显的边缘效应,并且与石墨烯的长度有关.界面的切应力具有尺度效应,其值随石墨烯长度的增加而减小,而石墨烯界面传递最大应变以及界面脱黏极限则不受试件尺度的影响.     

Microstructural and domain effects in epitaxial CoFe2O4 films on MgO with perpendicular magnetic anisotropy

CoFe₂O₄ (CFO) epitaxial thin films of various thicknesses were grown on MgO substrates using the pulsed electron-beam deposition technique. The films have excellent in-plane coherence with the substrate, exhibit layer-by-layer growth and have well-defined thickness fringes in x-ray diffraction measurements. Atomic force microscopy (AFM) measurements indicate that misfit dislocations form in thicker films and the critical thickness for the dislocation formation is estimated. Perpendicular magnetic anisotropy in CFO due to epitaxial in-plane tensile strain from the substrate was found. A stripe-like domain structure in the demagnetized state is demonstrated using magnetic force microscopy (MFM), in agreement with previous predictions. Coercivity increased in thicker films, which is explained by domain wall pinning due to misfit dislocations at the CFO/MgO interface.     

Investigations on macroscopic intrinsic stress in amorphous binary-alloy films

Macroscopic tensile and compressive mechanical stresses in the film plane are observed during the growth of amorphous binary-alloy films of ZrCo and TbCo prepared by the condensation of the metal vapours from two electron-beam evaporators. The mechanical stress is measured by a capacitive cantilever beam technique. Both kinds of stresses are affected by composition and substrate temperature, but the compressive stress additionally depends on the film thickness, evaporation rate and substrate material. The results are discussed in terms of a model for the growth of amorphous films published earlier.     

The preparation and evaluation of graded multilayer ta-C films deposited by FCVA method

In this study, a series of graded multilayer ta-C films were investigated by varying their sublayer thickness ratios, in which each film sublayer was prepared at different substrate bias by filtered cathode vacuum arc (FCVA) method. The experimental results show that the graded multilayer film structure can effectively decrease the internal stress level of deposited ta-C film, and meanwhile the graded multilayer ta-C films still have high sp³ fractions. The applied substrate bias voltage and sublayer thickness ratio can apparently influence the microstructure characteristics and internal stress of the graded multilayer ta-C films. The graded multilayer ta-C film has larger sp³ fraction when applying a larger negative substrate bias voltage and having a thicker outer sublayer during the film deposition process. However, the internal stress in the as-deposited film also increases with larger thickness of the outer sublayer, and the optimal ratio of sublayer thicknesses is 1:1:1:1 for graded ta-C film with four sublayers.     

Al2O3陶瓷衬底碳离子预注入对金刚石薄膜应力的影响研究

通过对Al2O3陶瓷衬底进行碳离子预注入，大大降低了Al2O3陶瓷衬底上金刚石薄膜的应力，且金刚石薄膜中的压应力随碳离子注入剂量的增加而线性下降.通过对Al2O3陶瓷衬底注入前后的对比分析表明，高能量的碳离子注入Al2O3陶瓷衬底以后，并没有产生过渡层性质的新相，而是大量累积在Al2O3晶格的间隙位，使Al2O3晶格发生畸变.而且，随着碳离子注入剂量的增加，Al2O3基体内晶格畸变加剧，注入层残余压应力也随之上升.当金刚石薄膜沉积以后，在降温的过程中衬底这部分残余应力得到释放，从而部分弛豫了金刚石薄膜中的 关键词： 金刚石薄膜 应力 离子注入 Al2O3陶瓷     

Two hardening mechanisms in single crystal thin films studied by discrete dislocation plasticity

Two-dimensional discrete dislocation plasticity simulations of the evolution of thermal stress in single crystal thin films on a rigid substrate are used to study size effects. The relation between the residual stress and the dislocation structure in the films after cooling is analyzed using dislocation dynamics. A boundary layer characterized by a high stress gradient and a high dislocation density is found close to the impenetrable film-substrate interface. There is a material-dependent threshold film thickness above which the dislocation density together with the boundary layer thickness and stress state are independent of film thickness. In such films the stress outside the boundary layer is on average very low, so that the film-thickness-independent boundary layer is responsible for the size effect. A larger size effect is found for films thinner than the threshold thickness. The origin of this size effect stems from nucleation activity being hindered by the geometrical constraint of the small film thickness, so that by decreasing film thickness, the dislocation density decreases while the stress in the film increases. The size dependence is only described by a Hall–Petch type relation for films thicker than the threshold value.