磁性隧道结中的量子相干输运研究

采用散射矩阵的方法研究了铁磁/绝缘层/半导体/绝缘层/铁磁(FM/I/SM/I/FM)磁性双隧道结的量子相干输运特性.研究发现当隧穿电子平均自由程(l_p)和中间层半导体厚度(L)可比拟时双结隧道磁阻(TMR)将随L的变化产生量子振荡,当l_p远大于L时振荡拐点处出现cut-off波矢,分析表明cut-off波矢主要是来自于隧道结两边的铁磁和半导体层隧穿电子动量波矢的高度不匹配性,随着L关键词： cut-off 波矢 量子相干 振荡 隧道磁阻     

有机电致发光器件的动态电学特性

利用交流阻抗谱技术，研究了有机发光二极管ITO/Alq₃(90 nm)/Al的载流子传导机理.根据器件对不同频率的响应曲线及其等效电路模型，该器件可看作是由并联的电阻R_p和电容C_p再与电阻R_s串联而成，并根据实验数据求出了R_p，C_p和R_s的数值.实验结果表明器件的载流子传输机理属于指数分布式的陷阱电荷限制电流，其介电弛豫时间随偏压的增加而逐渐减小. 关键词： 3')" href="#">Alq₃ 陷阱电荷限制电流 交流阻抗谱 有机发光二极管     

HgCdTe器件中载流子扩散长度的硼离子注入效应研究

报道了非直接接触、高分辨率的激光束诱导电流谱表征技术在检测半导体材料、器件工艺中的应用.研究结果表明:p型HgCdTe薄膜经硼离子注入后形成的n型区面积大于实际的离子注入区域；对不同注入剂量系列单元不同区域载流子扩散长度进行了提取,表明n区载流子扩散长度随硼离子注入剂量增加而减小.     

格子Boltzmann方法分析加热尺寸和瑞利数对可变形开口腔内自然对流的影响

采用格子Boltzmann方法对可变形腔体内自然对流问题进行数值研究，给出平均努赛尔数的经验关系式.腔体左壁加热长度分为左壁面的整个区域（H）和左壁面的中间区域（0.5H）两种情况，右壁向外界环境开放，上下边界绝热且可以上下移动，以此调节右出口尺寸.主要研究瑞利数（10⁴ ≤ Ra ≤ 10⁶），右出口尺寸（1.0H ≤ L ≤ 2.0H），左壁加热尺寸（L_h=0.5H或L_h=H）对腔体内等温线、流线、局部努塞尔数和平均努赛尔数的影响.结果表明：腔体内换热随着瑞利数的增大越来越强烈，表现为椭圆形准静止区域更加靠近上绝热壁，且热分层厚度逐渐变小，平均努赛尔数增加.而右出口尺寸的增加，对于两种加热尺寸下腔内的换热效果有不同程度影响，其中与加热尺寸为左壁面的全部区域L_h=H相比，加热尺寸为左壁面的中间情况L_h=0.5H时，右侧开口尺寸的增加对换热效果的影响不显著.此外，左壁加热尺寸为0.5H时显示出比加热尺寸为H时更高的平均传热效率.最后，针对不同的加热尺寸，提出加热面平均努赛尔数与Ra数及右壁面开口尺寸L^*之间函数关系的经验预测，拟合效果满足工程实践与设计需要.     

最短轨道凝聚模型的相变

应用重整化群计算最短轨道模型的生长几率分布{P_α,i}及其构型权重C_α(2×2原胞和3×3原胞),从而得出多分形热力学的配分函数Z(q,L),自由能F(q,L),能量E(q,L),比热c(q,L)和广义维数D_q,结果表明该模型在q=q_c≈0处发生相变,即当q < q_c时,生长几率分布{P_α,i}不具有多分形性质。     

HT-7托卡马克大功率低混杂波电流驱动的实验研究

在HT-7超导托卡马克成功进行了大功率（P_LHW=100—800 kW,f=2.45 GHz）低混杂波电流驱动实验.研究了不同入射功率和等离子体密度下的低混杂波电流驱动效率.获得了以平均电子密度增加、氘阿尔法（D_α）线辐射减少为特征的粒子约束改善;粒子约束时间τ_p增加了约1.5倍.仔细研究了能量约束时间与等离子体密度和低混杂波功率的关系. 关键词： 托卡马克 低混杂波 约束改善 电流驱动效率     

高次谐波的Guo-Åberg-Crasemann理论及其截断定律

将Guo-Åberg-Crasemann形式散射理论推广到高次谐波产生过程, 获得了高次谐波产生概率公式. 利用这一公式, 计算了不同惰性气体原子的高次谐波谱. 理论分析和数值计算显示高次谐波有新的截断定律q_cħω = (9 -4√2) U_p + (2√2-1) I_p ≈ 3.34 U_p + 1.83 I_p, 其中, U_p 为电子的有质动能, I_p 为原子电离能, ħω 为激光光子能量, q_c 为高次谐波的截断阶数. 这一截断定律与近期Popmintchev等 (Popmintchev et al. 2012 Science 336 1287) 的实验观测符合得很好.     

具有分形结构的SiC/SiO2界面的粗糙散射

用结构函数的方法建立了SiC粗糙表面的分形模型,用rms粗糙度Δ,分形维数D,以及相关长度L三个参量来刻画表面高度的自协方差函数,并提出了参数的计算方法.在此分形模型的基础上,能计算出SiC/SiO₂界面对沟道电子的粗糙散射.     

电子辐照下GaAs/Ge太阳电池载流子输运机理研究

通过地面模拟辐照试验获得不同能量电子辐照下GaAs/Ge太阳电池电学参数退化的基本规律, 在此基础上使用PC1 D模拟程序分析太阳电池内部的载流子输运机理, 建立不同能量的电子辐照下GaAs/Ge太阳电池中多数载流子浓度和少数载流子扩散长度随辐照粒子注量变化的基本规律. 研究结果表明: 多数载流子浓度和少数载流子扩散长度均随入射电子注量的增大而减小, 多数载流子去除率和少数载流子扩散长度损伤系数均随电子能量的增高而增大, 多数载流子去除效应和少数载流子扩散长度缩短分别是电池开路电压和短路电流退化的主要原因.     

Study on the structural characteristics of HgCdTe photodiodes using laser beam-induced current

The structural characteristics of typical n⁺-on-p HgCdTe photodiodes have been studied by laser beam-induced current (LBIC). The dependence of LBIC on laser wavelength, junction depth and localized leakage has been presented. The diffusion length of minority carrier of p-type region is extracted by the exponential decay fitting of the curve of LBIC. It is found that the peak magnitude of LBIC and junction depth approximate to a linear relationship for practical values of device fabrication. The diffusion length monotonously increases with the junction depth. A notable shift of LBIC profile is observed when localized leakage exists. This provides a useful explain for LBIC applying to characterize the structure and process uniformity of HgCdTe infrared detectors.     

Determination of diffusion length in photovoltaic crystalline silicon by modelisation of light beam induced current

The diffusion length of minority carriers is one of the most important electrical parameters to qualify silicon for photovoltaic applications. One way to evaluate this parameter is to analyse the decay of the current induced when a focused beam is scanned away from the collector using Light Beam Induced Current (LBIC) technique. The LBIC signal was numerically calculated with 2D-DESSIS software under different boundary conditions, as a function of material thickness and surface recombination velocity in order to verify the limitations of analytical models and to fit the LBIC signal measured in thin silicon samples. Samples with thickness ranging from 55 μm to 2500 μm were evaluated with diffusion length values ranging from 70 μm to 2.5 mm. Analytical expressions of the Internal Quantum Efficiency (IQE) were also used to extract the minority carrier bulk and effective diffusion lengths from surface averaged spectral response and reflectivity data in thick solar cells.     

Laser beam induced current microscopy and photocurrent mapping for junction characterization of infrared photodetectors

For non-destructive optical characterization, laser beam induced current(LBIC) microscopy has been developed into as a quantitative tool to examine individual photodiodes within a large pixel array. Two-dimensional LBIC microscopy, also generally called photocurrent mapping(PC mapping), can provide spatially resolved information about local electrical properties and p-n junction formation in photovoltaic infrared(including visible light) photodetectors from which it is possible to extract material and device parameters such as junction area, junction depth, diffusion length, leakage current position and minority carrier diffusion length etc. This paper presents a comprehensive review of research background, operating principle, fundamental issues, and applications of LBIC or PC mapping.     

Defect detection in solar cells via electroluminescence,LBIC, and EBIC methods

Structural defects affecting the efficiency of multicrystalline silicon solar cells are investigated by the electron-beam-induced current (EBIC) mode of a scanning electron microscope and the laser-beam-induced current (LBIC) method. It is experimentally demonstrated that the LBIC technique is more sensitive to electrically active 2D defects than the EBIC approach at large values of the diffusion length and excitation-beam penetration depth. The comparison of LBIC (or EBIC) and electroluminescence images enables us to reveal the correlation between solar-cell short circuits and electrically active structural defects.     

Coarsening in a driven Ising chain with conserved dynamics

We study the low-temperature coarsening of an Ising chain subject to spin-exchange dynamics and a small driving force. This dynamical system reduces to a domain diffusion process, in which entire domains undergo nearest-neighbor hopping, except for the shortest domains-dimers-which undergo long-range hopping. This system exhibits anomalous ordering dynamics due to the existence of two characteristic length scales: the average domain length L(t) approximately t(1/2) and the average dimer hopping distance l(t) approximately square root[L(t)] approximately t(1/4). As a consequence of these two scales, the density of short domains decays as t(-5/4), instead of the t(-3/2) decay that would arise from pure domain diffusion.     

P-Ga(1-x)InxAsyP1-y/InP材料的扩散长度测量

用激光扫描和电荧光衰减法测定了液相外延片p-Ga1-xInxAsyP1-y/InP(x=0.74,y=0.61)的少子扩散长度Im,并对这二种测试结果进行了比较,结果符合得很好。从这二种独立的实验结果获得表面复合速率S。S为6-7×104cm/s,扩散长度Lm为1.6～2.2μm。此外对p-Gε1-xInxAsyP1.y与InP衬底间的少数载流子行为进行了讨论。     

Relaxation of nuclear magnetization in a nonuniform magnetic field gradient and in a restricted geometry

We study the influence of restriction on Carr-Purcell-Meiboom-Gill spin echo response of magnetization of spins diffusing in a bounded region in the presence of a nonuniform magnetic field gradient. We consider two fields in detail-a parabolic field which, like the uniform-gradient field, scales with the system size, and a cosine field which remains bounded. Corresponding to three main length scales, the pore size, L(S), the dephasing length, L(G), and the diffusion length during half-echo time, L(D), we identify three main regimes of decay of the total magnetization: motionally averaged, localization, and short-time. In the short-time regime (L(D) < L(S), L(G)), we confirm that the leading order behavior is controlled by the average of the square of the gradient, (nablaB(z))(2), and in the motionally averaged regime (MAv), where L(S) < L(D), L(G), by (integral dxB(z))(2). We verify numerically that two different fields for which those two averages are identical result in very similar decay profiles not only in the limits of short and long times but also in the intermediate times, with important practical implications. In the motionally averaged regime we found that previous estimates of the decay exponent for the parabolic field, based on a soft-boundary condition, are significantly altered in the presence of a more realistic, hard wall. We find the scaling of the decay exponent in the MAv regime with pore size to be L(2)(S) for the cosine field and L(6)(S) for the parabolic field, as contrasted with the linear gradient scaling of L(4)(S). In the localization regime, for both the cosine and the parabolic fields, the decay exponent depends on a fractional power of the gradient, implying a breakdown of the second cumulant or the Gaussian phase approximation. We also examined the validity of time-evolving the total magnetization according to a distribution of effective local gradients and found that such approximation works well only in the short-time regime and breaks down strongly for long times. Copyright 2000 Academic Press.     

一种低损耗的对称双楔形太赫兹混合表面等离子体波导

本文研究了一种适用于太赫兹频段的对称双楔形混合等离子体波导.采用有限元法对其混合模式特征进行数值模拟,阐述了波导的传播长度、归一化有效模场面积和品质因子等特性随波导几何参数的变化规律.结果表明,对称双楔形混合等离子体波导在太赫兹频段可获得良好的模场约束能力和低损耗特性,在有效模场面积达到λ2/10280时,传播长度达到51 × 103 μm.波导参数最优时的平行对称楔形波导在忽略波导间串扰时,波导间距小于16 μm时的耦合长度约为8958 μm.通过对比发现,相比于先前的对称微楔形波导结构和对称蝴蝶结波导结构,对称双楔形混合等离子体波导在传输特性和耦合特性方面都具有更大的优势,将在光学力捕获、生物分子传输以及高密度集成电路设计等方面具有潜在的应用前景.     

Mixing by polymers: experimental test of decay regime of mixing

By using high molecular weight fluorescent passive tracers with different diffusion coefficients and by changing the fluid velocity we study the dependence of a characteristic mixing length on the Peclet number, Pe, which controls the mixing efficiency. The mixing length is found to be related to Pe by a power law, L(mix) proportional, variant Pe0.26+/-0.01, and increases faster than expected for an unbounded chaotic flow. The role of the boundaries in the mixing length abnormal growth is clarified. The experimental findings are in good quantitative agreement with recent theoretical predictions.