照明用大功率LED的封装与出光

研究了照明用大功率LED封装对出光的影响,分析了大功率LED封装结构对提高外量子效率的影响,同时比较了不同LED封装材料对LED出光的影响。提出了用左手材料替代目前广泛采用的电极和封装材料的大功能LED封装思路,并分析了其可行性。     

远程荧光粉与芯片的间距对白光LED性能的影响

荧光粉转换白光LED具有高能效、低成本、长寿命等优势，广泛应用于照明领域，提高荧光粉转换白光LED的光效一直是该领域的研究热点。为了对白光LED的高性能封装进行设计优化和制备，采用模拟仿真以及实验测试相结合的方式，对LED芯片封装进行研究分析，采用了特制支架和双芯片封装，提高灯珠光效，在此基础上，改进了荧光粉涂覆工艺，提高了荧光粉激发效率，整体提高LED光效约6%，且研究了远程荧光粉与芯片的距离变化时LED的光效变化。     

大功率LED封装的散热分析

建立大功率LED的三维封装模型, 利用有限元方法对LED的温度场分布进行模拟计算, 通过改变LED封装的相关参数, 分析得到了键合材料和基板厚度等对LED封装散热的影响, 这一设计方法对优化LED的封装具有一定的指导意义。     

大功率LED明星秀

从1962年第一只LED问世至今的40多年的时间里，LED的封装形态发生了多次的演变。从20世纪60年代的玻壳封装，到70年代的环氧树脂封装，到90年代中后期的四脚食人鱼封装、贴片式SMD封装、大功率封装、芯片阵列式COB封装等，每一次都是因应用领域的拓展和封装技术的进步而改变。近年来出现的大功率LED，更是由于其在半导体照明应用中的重要地位，在短短的几年里封装形态已发生了多次的变化，     

LED封装中的散热研究

文章论述了大功率LED封装中的散热问题,说明它对器件的输出功率和寿命有很大的影响,分析了小功率、大功率LED模块的封装中的散热对光效和寿命的影响。对封装及应用而言,增强它的散热能力是关键技术,指出对大功率LED和LED模块散热设计很重要,因为大功率白光LED的光效和寿命取决于其散热。目前大功率LED的重点是提高散热能力,说明封装结构和封装材料在提高大功率LED散热中的影响,LED模块的散热是未来的重点。通过选用高热导率材料可以使温度得到显著控制,重点论述了封装的关键技术,最后指出了未来LED封装技术的发展趋势。     

LED封装结构对出光率的影响

出光率是影响LED发光效率的重要因素之一,优化LED出光率可以提高LED的器件发光效率。文章利用TracePro软件模拟分析了封装结构对LED出光率的影响,分析结果表明:封装腔体的形状与出光率关系不大,而封装腔体的张角、封装腔体顶面的凹凸性与出光率有较大关系,另外出光率还与腔体的高度、封装腔体的反射率、腔体的母线均相关。总之LED封装结构会影响LED出光率,在进行LED封装时,要选择合适的封装结构才能获得较高的LED出光率。     

2008年中国LED产业发展概况分析

LED完整产业链条分为LED外延片，LED芯片，LED封装，LED应用．估计到2010年，整个中国LED产业产值将超过1500亿元。LED产业链中，LED外延片跟LED芯片大概占行业70％的利润，LED封装大概10％-20％，LED应用大概10％～20％。08年LED产业市场将达到68亿美元（美国市场研究公司（CIR）预测），平均每年增长20％～30％，     

基于COB技术的LED散热性能分析

当前,散热问题已成为影响LED寿命、光效、光衰和色温等技术参数的重要因素。文章在综合分析散热技术和LED封装对散热性能影响的基础上,利用COB(板上芯片)封装技术,将LED芯片直接封装在铝基板上,研制成了一种基于COB封装技术的LED。与SMD封装LED进行比较,分析了其散热性能。分析结果表明:基于COB封装技术的LED减少了LED器件的结构热阻和接触热阻,使其具有良好的散热性能。     

高性能LED封装点胶中流体运动与胶液喷射研究

LED照明具有高亮度、低能耗、体积小、环保等特点,因此被认为是未来替代传统照明方式的最佳光源。而对于高粘度、高频、微量、高一致性的LED荧光粉点胶,目前还存在无法出胶、点胶性能不稳定、胶滴一致性不好等问题。首先阐述了LED照明的应用特点以及当前照明封装产业的技术水平,随后结合将来主流的喷射式点胶技术,利用Flow-3D软件建立了LED喷射点胶过程的计算机仿真模型。随后得到了点胶过程中胶液在喷胶阀内的流动情况,在此基础上又探讨了各因素对胶液喷射的影响规律。其结果可以为后续的研究奠定基础,同时对具体的LED工业生产及封装装备制造也有一定的参考价值。     

层压封装平面LED光源的耐候实验

研究了层压封装的平面LED光源在高温高湿与水下环境的可靠性。平面LED光源采用标准层压工艺封装,对封装后的LED模组进行高温高湿耐候试验与水下环境试验,并与未封装的LED模组进行对比实验。实验结果表明,在环境温度为80℃、相对湿度为80%,模组工作电流为300 mA,连续33天高温高湿条件下,层压封装的平面LED模组的照度变化和温度均高于未封装的LED模组。在40℃水下环境下连续工作400 h,层压封装的平面LED模组的照度略有变化,且光衰小于1%。因此,层压封装能有效阻断外界高温高湿环境对LED模组可靠性的影响,更适合在常温水下照明应用。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.