共查询到19条相似文献,搜索用时 218 毫秒
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忆阻器作为一种新型电子元件,具有尺寸小、读写速度快、非易失性和易于与CMOS电路兼容等特性,是实现非易失性存储器最具发展前景的技术之一。但是已有的多值存储交叉阵列存在电路结构复杂、漏电流和存储密度低等问题,影响了多值存储交叉阵列的实用性。该文提出一种基于异构忆阻器的多值存储交叉阵列,其中存储单元由1个MOS管和两个具有不同阈值电压和Ron阻值的异构忆阻器构成(1T2M),可实现单个电压信号完成4值读写的操作,减少电流通路的同时简化了电路结构。通过PSpice进行仿真验证,表明所提出的1T2M多值存储器交叉阵列与已有工作相比,电路结构更简单,读写速度更快,并较好地克服了漏电流问题。 相似文献
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忆阻器作为一种新型电子元件,具有尺寸小、读写速度快、非易失性和易于与CMOS电路兼容等特性,是实现非易失性存储器最具发展前景的技术之一.但是已有的多值存储交叉阵列存在电路结构复杂、漏电流和存储密度低等问题,影响了多值存储交叉阵列的实用性.该文提出一种基于异构忆阻器的多值存储交叉阵列,其中存储单元由1个MOS管和两个具有不同阈值电压和Ron阻值的异构忆阻器构成(1T2M),可实现单个电压信号完成4值读写的操作,减少电流通路的同时简化了电路结构.通过PSpice进行仿真验证,表明所提出的1T2M多值存储器交叉阵列与已有工作相比,电路结构更简单,读写速度更快,并较好地克服了漏电流问题. 相似文献
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《固体电子学研究与进展》2015,(3)
忆阻器是纳米级尺寸、非易失性的两端无源性器件,在数据存储、图像处理和模拟神经网络突触等方面有很大的优势。为了研究忆阻器的特性,在理想的忆阻器模型的基础下,搭建了2种不同窗函数的忆阻器Simulink模型。通过Matlab仿真研究了不同的输入激励以及模型的变化对忆阻器的影响,获得了关于忆阻器的许多新特性和一些重要的结果,并与已知的忆容器和忆感器的输入输出特性作了对比,说明忆阻器与忆容器、忆感器具有相似的特性。仿真结果表明忆阻器在应用方面的具有很大的潜力。 相似文献
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目前,忆阻器模拟器的研究主要集中在磁控忆阻器,对荷控忆阻器模拟器的研究不多,双曲函数型的荷控忆阻器模拟器也很少涉及。因此,该文提出一种基于双曲函数的通用型荷控忆阻器模拟器。模拟器通过电压-电流的相互转换电路,实现电路中电压和电流信号之间的相互转换,再通过电路中对应的电路模块对产生的信号进行计算,最终得到通用型双曲荷控忆阻器模型。模拟器能够实现双曲正弦、双曲余弦以及双曲正切函数对应的荷控忆阻器模型。通用型双曲函数荷控忆阻器模拟器对应的等效电路,主要由运算放大器、电阻、电容、三极管等基本元件组成。分析模拟器在不同幅值以及不同频率的输入信号下的伏安特性曲线,得出荷控忆阻器模拟器符合记忆元件的基本特性。该文提出的通用型双曲函数荷控忆阻器模型,对忆阻器模型的发展具有一定的参考意义。 相似文献
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忆阻器是一种具有类似突触特性、记忆特性的新型非线性器件,它具有无源性,低耗能,记忆特性以及纳米尺度等特点,因此常用于构建结构简单、权值灵活可调、集成度高的人工神经网络。而人工神经网络是现代信息处理和智能控制领域的一个重要方法,将忆阻器应用于人工神经网络方面将会加速实现人工智能时代的到来。此方面的研究有许多,比如忆阻器实现神经元电路的研究,忆阻器的智能PID控制器等,本文列举概括了忆阻器在人工神经网络方面的研究应用。 相似文献
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Truly Electroforming‐Free and Low‐Energy Memristors with Preconditioned Conductive Tunneling Paths
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Jung Ho Yoon Jiaming Zhang Xiaochen Ren Zhongrui Wang Huaqiang Wu Zhiyong Li Mark Barnell Qing Wu Lincoln J. Lauhon Qiangfei Xia J. Joshua Yang 《Advanced functional materials》2017,27(35)
1S1R (1 selector and 1 memristor) is a laterally scalable and vertically stackable scheme that can lead to the ultimate memristor density for either memory or neural network applications. In such a scheme, the memristor device needs to be truly electroforming‐free and operated at both low currents and low voltages in order to be compatible with a two‐terminal selector. In this work, a new type of memristor with a preconditioned tunneling conductive path is developed to achieve the required performance characteristics, including truly electroforming‐free, low current below 30 µA (potentially <1 µA), and simultaneously low voltage ≈±0.7 V in switching operations. Such memristors are further integrated with two types of recently developed selectors to demonstrate the feasibility of 1S1R integration. 相似文献
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The memristor is considered as the fourth fundamental circuit element along with resistor, capacitor and inductor. It is a two-terminal passive circuit element whose resistance value changes based on the amount of charge flowing through it. Another property of the memristor is that its resistance change is non-volatile in nature, and hence can be used for non-volatile memory applications. Researchers have been exploring memristors from various perspectives such as logic design and storage applications. In this paper, a slicing crossbar architecture for the efficient mapping of Boolean functions is proposed which exploits gate level parallelism using the memristor aided logic (MAGIC) design style. A Boolean function is first represented as a Binary Decision Diagram (BDD). The BDD nodes are expressed as netlists of NOR and NOT gates, and are mapped to the proposed slicing crossbar architecture with parallel node evaluation where possible. This is the first approach that combines BDD-based synthesis with MAGIC gate evaluation on memristor crossbar, while at the same time avoiding crossbar-related problems using a slicing architecture. Experimental evaluations on standard benchmark functions show considerable improvement in the solutions. 相似文献
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In Hyuk Im Seung Ju Kim Ji Hyun Baek Kyung Ju Kwak Tae Hyung Lee Jin Wook Yang Da Eun Lee Jae Young Kim Hee Ryeong Kwon Do Yeon Heo Soo Young Kim Ho Won Jang 《Advanced functional materials》2023,33(8):2211358
Halide perovskites (HPs) can be the effective functional materials for the sneak-path current issue in the memristive crossbar array. Herein, an efficient strategy is proposed to integrate the HPs-based bidirectional threshold and bipolar resistive switches (TS and RS). The resistance change characteristics from volatile threshold to nonvolatile resistive switching are modulated by controlling Ag doping concentration in the MAPbI3. HPs provide the diffusive condition and the quantity of Ag regulates the radius of its network. A low amount of Ag contributes to weak network with a short lifetime. However, when the amount of Ag increases, the conductive filament becomes more robust, showing a long lifetime. A MAPbI3:Ag TS with a low Ag content is developed, showing a steep switching slope (1 mV per decade), fast switching speed (< 80 ns), and low off-current (10 nA). And, a MAPbI3:Ag RS with a high Ag content is developed, showing multilevel storage capability and long retention time (1400 s). Finally, these TS and RS coupled into the 1S-1R integrated component, resulting the development of the maximum crossbar array size to 1.4 × 1012. This study offers an efficient methodology for tailoring the resistance change characteristics and a promising strategy for practical HPs-based memristive crossbar application. 相似文献
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Ying-Chen Chen Chih-Yang Lin Hyojong Cho Sungjun Kim Burt Fowler Jack C. Lee 《Journal of Electronic Materials》2020,49(6):3499-3503
Bilayer selectorless resistive random-access memories (RRAM) have been demonstrated by utilizing the intrinsic nonlinear resistive switching (RS) characteristics, without additional transistor or a selector integration. The bilayer structures, i.e. high-k layer/low-k layer stacks, are highly scalable while suppressing the sneak path currents (SPC) and reading error in the crossbar RRAM array. The nonlinearity (NL) modulation is also investigated by different operating schemes, and a multilevel cell application is demonstrated with the current-sweep method. The results provide additional insights into the development and optimization of bilayer selectorless RRAMs with high nonlinearity, good memory window, and low switching energy (∼ 40 pJ/bit), which enable the high-density storage and low-power crossbar array memory applications. 相似文献
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忆阻器作为一种非易失性的新型电路元件,在数字逻辑电路中具有良好的应用前景。目前,基于忆阻器的逻辑电路主要涉及全加器、乘法器以及异或(XOR)和同或(XNOR)门等研究,其中对于忆阻乘法器的研究仍比较少。该文采用两种不同方式来设计基于忆阻器的2位二进制乘法器电路。一种是利用改进的“异或”及“与”多功能逻辑模块,设计了一个2位二进制乘法器电路,另一种是结合新型的比例逻辑,即由一个忆阻器和一个NMOS管构成的单元门电路设计了一个2位二进制乘法器。对于所设计的两种乘法器进行了比较,并通过LTSPICS仿真进行验证。该文所设计的乘法器仅使用了2个N型金属-氧化物-半导体(NMOS)以及18个忆阻器(另一种为6个NMOS和28个忆阻器),相比于过去的忆阻乘法器,减少了大量晶体管的使用。 相似文献
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From Deep Blue to AlphaGo, artificial intelligence and machine learning are booming, and neural networks have become the hot research direction. However, due to the size limit of complementary metal–oxide–semiconductor (CMOS) transistors, von Neumann-based computing systems are facing multiple challenges (such as memory walls). As the number of transistors required by the neural network increases, the development of neural networks based on the von Neumann computer is limited by volume and energy consumption. As the fourth basic circuit element, memristor shines in the field of neuromorphic computing. The new computer architecture based on memristor is widely considered as a substitute for the von Neumann architecture and has great potential to deal with the neural network and big data era challenge. This article reviews existing materials and structures of memristors, neurophysiological simulations based on memristors, and applications of memristor-based neural networks. The feasibility and advancement of implementing neural networks using memristors are discussed, the difficulties that need to be overcome at this stage are put forward, and their development prospects and challenges faced are also discussed. 相似文献
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This paper presents a scheme for designing a memristor-based look-up table (LUT) in which the memristors are connected in rows and columns. As the columns are isolated, the states of the unselected memristors in the proposed scheme are not affected by the WRITE/READ operations; therefore, the prevalent problems associated with nanocrossbars (such as the write half-select and the sneak path currents) are not encountered. Extensive simulation results of the proposed scheme are presented with respect to the WRITE and READ operations; its performance is compared with previous LUT schemes using memristors as well as SRAMs. It is shown that the proposed scheme is significantly better in terms of WRITE time and energy dissipation for both memory operations (i.e. WRITE and READ); moreover it is shown that the READ delay is nearly independent of the LUT dimension. Simulation using benchmark circuits for FPGA implementation show that the proposed LUT offers significant improvements also at this level. 相似文献
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《Microelectronics Journal》2014,45(11):1401-1415
Memristors have uses as artificial synapses and perform well in this role in simulations with artificial spiking neurons. Our experiments show that memristor networks natively spike and can exhibit emergent oscillations and bursting spikes. Networks of near-ideal memristors exhibit behaviour similar to a single memristor and combine in circuits like resistors do. Spiking is more likely when filamentary memristors are used or the circuits have a higher degree of compositional complexity (i.e. a larger number of anti-series or anti-parallel interactions). 3-memristor circuits with the same memristor polarity (low compositional complexity) are stabilised and do not show spiking behaviour. 3-memristor circuits with anti-series and/or anti-parallel compositions show richer and more complex dynamics than 2-memristor spiking circuits. We show that the complexity of these dynamics can be quantified by calculating (using partial auto-correlation functions) the minimum order auto-regression function that could fit it. We propose that these oscillations and spikes may have similar phenomena to brainwaves and neural spike trains and suggest that these behaviours can be used to perform neuromorphic computation. 相似文献