高效率紧凑紫外355nm激光器

报道一种激光二极管(LD)端面抽运的Nd:YAG激光晶体腔外三倍频355 nm紫外激光器,实验中采用声光调Q技术,选用结构紧凑的平平腔结构,在腔外对1 064 nm基波采用了Ⅰ类相位匹配Li3B3O5(LBO)晶体二倍频、Ⅱ类相位匹配LBO晶体实现了三倍频,获得了较好的光束质量的准连续355 nm紫外激光输出,在激光二极管泵浦功率为28 W时,声光Q开关调制频率为10 kHz时,获得了8.1 W的红外1 064 nm红外激光,紫外单脉冲能量165μJ,脉宽6 ns,峰值功率27.5 kW,808 nm到355 nm的光-光转换率为5.89%,整个系统长度控制在150 mm以内,该激光器结构紧凑,适合产品化。     

LD抽运355-nm准连续紫外激光器

报道了激光二极管(LD)侧面抽运Nd:YAG激光晶体腔内三倍频355 nm紫外激光器.实验中采用声光调Q技术,选用结构简单、紧凑的三镜折叠、平一凹腔设计,在腔内对1064 nm基波采用Ⅰ类相位匹配LiB3O5(LBO)晶体二倍频、Ⅱ类相位匹配LBO晶体实现三倍频,获得了较好光束质量的准连续紫外激光输出.在激光二极管抽运功率为155 W,声光调Q的调制频率为5.40 kHz的工作条件下,获得脉宽为45 ns,最高平均输出功率为2.14 W,光场均匀分布的355 nm准连续紫外激光,808 nm抽运光到355 nm紫外激光的光-光转换效率达到1.38%,1 h内输出稳定性为3.30%.此外,对影响腔内三倍频转换效率的因素进行了相应的分析研究.     

LD端面泵浦355 nm紫外激光器

采用大功率激光二极管模块光纤耦合端面泵浦Nd∶YVO4晶体,声光调Q,腔外三倍频方式实现355 nm紫外激光输出。通过计算设计了高效稳定基频谐振腔,在腔外采用LBOⅠ类相位匹配和LBOⅡ类相位匹配的方式倍频与和频,并采用4 f系统对1064 nm基频光和532 nm倍频光进行聚焦,减小了球差效应对光束的影响以提高和频效率。在泵浦功率32.3 W,得到15.9 W 1064 nm连续基频激光输出,光光效率49%。在20 kHz调制频率下,得到1.45 W355 nm紫外激光输出。通过Spiricon光束质量分析仪进行测试,在大功率输出时,紫外激光光束质量因子M2x=1.6,M2y=1.56。     

大功率准连续355nm紫外全固态激光器的研究

报道了一台激光二极管(LD)侧面抽运Nd:YAG腔内倍频与和频准连续355 nm紫外激光器。采用双头Q开关调制的LD侧面抽运Nd:YAG激光器,通过在腔内置入I类非临界相位匹配的三硼酸锂(LBO)晶体进行倍频获得532 nm波长准连续激光,置入两块II类相位匹配的LBO晶体对基频光和倍频光进行两次和频,从而获得了大功率准连续355 nm紫外激光输出。在注入电功率为939.6 W、重复频率为8 kHz时,355 nm激光最大输出功率为15.3 W,脉宽为90 ns,总转换效率为1.63%,其光束质量M2x,M2y分别为4.23和4.56,功率不稳定度为±2.7%。     

高效腔内色散调Q Nd:YAG紫外激光器

采用避免激光器不稳定的色散调Q YAG激光谐振腔设计,用Ⅰ类非临界相位匹配LBO晶体,在腔内产生二次谐波,产生的532nm与腔内1064nm在腔内经过Ⅱ类临界相位匹配LBO晶体产生355nm的紫外激光。为了提高谐波转化效率,分别在腔内插入了λ／4波片、偏振片,得到在泵浦捕运光功率约为120W时输出2．5W的355nm紫外激光,功率稳定性RMS在3h内小于0．8％。     

La3Ga5SiO14晶体电光调Q高重复频率瓦级紫外激光器

报道了一台激光二极管(LD)双端面抽运Nd:YVO4晶体腔内三倍频355 nm紫外激光器.采用La3Ga5SiO14(LGS)高重复频率电光调Q技术,U型平凹腔结构设计,在腔内用I类相位匹配的LiB3O5(LBO)晶体实现二倍频,Ⅱ类相位匹配的LBO晶体实现三倍频,获得了高效率、高峰值功率、高重复频率的355 nm紫外...     

激光二极管泵浦高功率Nd：YAG紫外激光器

对半导体侧面泵浦Nd:YAG准连续高功率紫外激光器进行实验研究,首次采用新颖谐振腔型对基波进行非线性转换获得稳定的355nm紫外激光输出.在主谐振腔中,3列相互呈120°放置的激光二极管线阵对中心处直径3mm的Nd:YAG晶体棒进行连续泵浦,实现了1064nm基频光稳定振荡;在子腔中,使用对基频光双程倍频双程和频的方法提高转换效率,实现了高功率准连续355nm紫外激光单向稳定输出;实验使用角度调谐的Ⅰ类相位匹配LB0晶体与Ⅱ类相位匹配LBO晶体,当调制频率5.4kHz时,355nm紫外激光最高平均输出功率1.89W,脉冲宽度小于65ns,1h内输出功率抖动低于7%.     

LD 泵浦全固体连续蓝紫光激光器的实验研究

报道了利用最大输出功率为500mW的LD纵向泵浦Cr：LiSAF／LBO、利用平凹腔结构获得430nm连续蓝紫光激光输出的实验研究。Cr：LiSAF激光晶体厚度为1．01mm、掺杂浓度为2．2％。在LD泵浦功率为320mW时，基频光860nm的最大输出功率为53mW。此时，采用LBO倍频晶体Ⅰ类临界相位匹配进行腔内倍频获得倍频光430nm的最大输出功率为0．54mW，激光阈为101mW，斜效率为0．14％。     

LD端面泵浦千赫兹多波长激光器

报道了一台用于大气探测激光雷达系统的LD脉冲端面泵浦Nd∶YAG激光晶体的腔外倍频千赫兹多波长激光器.采用紧凑介稳腔设计和电光调Q方式,获得具有高动静比的1064 nm基频光脉冲输出.腔外采用Ⅰ类相位匹配LBO晶体倍频,Ⅱ类相位匹配LBO晶体和频,实现了355 nm和频光输出,同时对355 nm和频光单脉冲能量的影响因素进行了理论分析和实验研究.当倍频转换效率为53％时,获得重复频率为1 kHz的三波长激光分束输出,对应的单脉冲能量分别为1.18 mJ@1064 nm、1.06 mJ@532 nm、0.73 mJ@355 nm;脉冲宽度分别为3.49 ns@1064 nm、3.42 ns@532 nm、3.02 ns@355 nm;光束质量因子分别为Mx2=1.70、Mx2=1.75@1064 nm,Mx2=1.57、Mx2=1.41@532 nm,Mx2=1.51、Mx2=1.38@355 nm.     

高效率高功率全固态紫外激光器

报道了采用大功率国产光纤束模块端面抽运Nd∶YVO4激光晶体的腔外三倍频紫外激光器,用声光调Q技术实现了高功率高光束质量基频光输出。采用LBOⅠ类相位匹配和LBOⅡ类相位匹配的腔外倍频方法,并利用凹面反射镜的方式进行聚焦,避免了1064nm和532nm激光聚焦时由于波长的不同而产生的色差效应,有效地提高了三倍频的倍频效率。最终在注入抽运光功率为23.3W,声光调Q激光器的调制频率为20kHz的工作条件下,基频光输出功率为7.28W时,得到紫外激光输出功率为1.86W,1064nm基频光到355nm紫外激光的光-光转换效率为25.5%,此外,对紫外激光光束质量的测试表明,该紫外激光器具有高功率输出的同时仍有很好的光束质量。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.