Ni-Mn-Ga铁磁性形状记忆薄膜研究进展

Ni-Mn-Ga合金兼有铁磁性和形状记忆效应,有望成为继压电陶瓷和磁致伸缩材料之后的新一代驱动与传感材料。但是由于合金脆性较大,难以切割,限制了其在微机电系统中的应用。系统阐述了薄膜的化学成分、组织结构、相转变、形状记忆效应及其影响因素,指出目前Ni-Mn-Ga合金薄膜研究中,各个元素对性能影响的探索存在不足,制备出的薄膜主要存在磁性能、磁致应变量偏低以及磁致形状记忆效应不可逆等缺点。可以通过调整薄膜化学成分、热处理工艺、膜厚或者元素替换来提高薄膜的性能。     

热处理对Ti-Mo-V-Nb-Al合金微观结构的影响

形状记忆合金由于其优良的超弹性和形状记忆效应而在医学上有着广泛的应用，其中由于NiTi形状记忆合金相较其它形状记忆合金具有更好的超弹性和生物相容性而得到了广泛的应用。但由于镍元素的毒性，使得开发一种生物相容性更好、无镍且具有良好力学性能的形状记忆合金成为必需。Ti-Mo-V-Nb-Al五元合金就是为此而开发的一种新型形状记忆合金。本研究用X射线衍射（XRD）、透射电子显微镜（TEM）和高分辨电子显微镜（HREM）研究了不同热处理条件对Ti-Mo-V-Nb-Al形状记忆合金微观结构的影响。     

衬底负偏压对Ni-Mn-Ga形状记忆薄膜成分及形貌的影响

采用能谱仪(EDS)和原子力显微镜(AFM)对不同衬底负偏压下射频磁控溅射法制备的Ni-Mn-Ga形状记忆薄膜进行了成分和形貌的分析.研究发现:当衬底负偏压在5～30V范围变化时,薄膜中的Ni含量随偏压的增加呈先减少后增加的趋势,在偏压为10V时,达到最小值52.84％(摩尔分数,下同).Ga含量的变化趋势恰好与Ni相...     

Ⅲ A元素掺杂对ZnO电子结构的影响

采用基于密度泛函理论的第一性原理缀加投影波赝势法,分别对ZnO、掺B、Al、Ga、In的ZnO的电子结构进行计算.与未掺杂ZnO相比,Ⅲ A族元素掺杂ZnO的光学带隙变宽,可见光透光能力增强、费米能级进入导带,导电能力提高,适合作透明导电膜,其中Ga掺杂ZnO的透明性和导电性更好,最适合做透明导电膜.     

重掺杂能带结构的变化对突变HBT电流影响

基于禁带变窄量在导带和价带之间的分布比例与掺杂浓度相关的Jain-Roulston模型,研究了重掺杂能带结构的变化对突变异质结HBT电流影响.研究表明:禁带变窄量在导、价带间分布模型选用的不同,计算结果之间有明显的差别,基于Jain-Roulston分布模型的结果同实验测量符合很好.因此对于突变HBT性能分析,必须精确考虑重掺杂禁带变窄量在能带上的具体分布.     

Ag对Sn-Pb电子钎料合金性能的影响

研究了Ag的合金化对Sn-Pb钎料合金材料性能的影响。并从钎料的润湿性能，机械性能及抗腐蚀性能等方面讨论了Ag的有利作用，研究表明，在一些特定条件下的电子元件的焊接，Sn-Pb-Ag钎料可部分地或全部地替代昂贵的遗金属钎料合金。     

梯度掺杂与分层退火对AZO薄膜结构与性能的影响

用sol-gel法在玻璃基片上分别制备了不同Al浓度掺杂和Al梯度掺杂的掺铝氧化锌(AZO)薄膜,并研究了分层退火和一次性退火对薄膜结构和性能的影响.结果表明:梯度掺杂与分层退火都能促进薄膜的(002)择优取向.Al掺杂摩尔分数为1.5％的薄膜和经分层退火处理的Al梯度掺杂的薄膜在395 nm处均有很强的紫外发射峰,但...     

Cu掺杂对Cu-Mn-Co-Ni-O薄膜结构和性能的影响

通过金属有机物热分解法制备了结构为Ag/NTC/SiO_2/Si的薄膜NTC(负温度系数)热敏电阻,研究了Cu掺杂对Cu_xMn_(1.56)Co_(0.96)Ni_(0.48)O_(4+y)[x=0～0.25,(x+3)/(4+y)=3/4]薄膜结构和性能的影响,并对其导电机理进行了分析。结果表明,少量Cu(x≤0.2)掺杂可以迅速降低薄膜的室温电阻值,过量则会导致薄膜产生孔隙和缺陷; Cu主要以Cu~+形式存在并占据A位;随着Cu掺杂量的增加,会使Cu~+和Mn~(3+)/Mn~(4+)离子对的含量占比均增加,促进两种电子跳跃机制导电。当x=0.2时,薄膜电阻有最佳的性能:R_(25)=0.082 MΩ,B_(25/50)=3250 K。     

复合掺杂对NiCuZn铁氧体磁性能的影响

为了获得高初始磁导率(μi)、低损耗的NiCuZn铁氧体,研究了复合掺杂微量元素对其磁性能、电阻率和微观结构的影响。实验中加入了四组不同含量的微量元素,用了尼龙罐与钢罐两种球磨罐,结果表明:当掺入的Bi2O3,PbO,TiO2及Co3O4质量分数分别为0.11%,0.30%,0.01%及0.20%,在950℃烧结时,所获铁氧体的磁性能为:μi为480,电阻率为4×109Ω·m,Hc为44.5A/m。且钢罐球磨料的综合性能优于尼龙罐。     

退火及掺杂对空穴传输层PEDOT:PSS电学特性的影响

采用匀胶机旋转涂成膜的方法,在手套箱中制备PEDOT聚对苯乙烯磺酸(PSS)薄膜。详细研究了退火和掺杂对薄膜电学特性的影响,结果发现,在本实验范围内,薄膜的电导率随退火的温度和时间增加均呈现出最大值,这与薄膜的表面形貌是密切相关的;并且,由于材料的亲水性,导致真空下比N2和空气条件下退火薄膜的电导率要高;通过掺杂N,N-二甲基甲酰胺(DMF)和乙二醇,使薄膜的电导率提高了近3个量级。     

Influence of boron doping on the properties of amorphous and microcrystalline SiC films prepared using ECR-CVD

Hydrogenated silicon carbide films (SiC:H) were deposited using the electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) method from a mixture of methane, silane, and hydrogen, with diborane as the doping gas. The effect of changes in the percentage of the diborane to reactant gas mixture on the deposition rate, optical bandgap, and photoconductivity were investigated. There is evidence from Raman scattering analysis to show that films deposited at a low microwave power of 150 W were all amorphous and the bandgap decreases as the diborane level is increased whereas films deposited at a high microwave power of 800 W at low diborane levels are highly photoconductive and contain microcrystalline silicon inclusions. These films become amorphous as the diborane level is increased, while the optical bandgap remains relatively unaffected throughout the entire range of diborane levels investigated. The effect of the microwave power was also investigated. The conductivity increases rapidly to a maximum, followed by rapid reduction at high microwave powers. Raman scattering analysis showed evidence of the formation and increase of microcrystalline silicon inclusions and diamond-like components in the films, the former of which could account for the rapid increase and the latter the subsequent decrease in the conductivity.     

Sm~(3+)掺杂对MnZn铁氧体显微结构及性能的影响

采用传统固相法,制备了Sm3+掺杂的MnZn铁氧体。借助XRD、SEM和Agilent 8722 ET网络分析仪等表征手段,研究了微量Sm3+掺杂对其显微结构及电磁性能的影响。结果表明,当n(Sm3+)为0.03mol,其晶格常数a增加到0.84491nm。当n(Sm3+)为0.03mol,MnZn铁氧体的复介电常数和复磁导率显著提高,ε″和μ″损耗峰值分别提高到2.15和5.52。     

Microstructure and thermal expansion properties of invar-type Cu-Zn-Al shape memory alloys

The effects of grain size, volume fraction of the α (fcc) phase in the β (bcc) matrix, and thermal stability on low thermal expansion (LTE) properties of Cu-Zn-Al shape memory (SM) alloys induced by cold rolling were investigated by dilatometry, optical microscopy, differential scanning calorimetry, and electrical conductivity measurements. The alloys with the larger grains showed a superior two-way memory (TWM) effect, wider LTE temperature intervals with excellent thermal stability under 80°C. The α+β two-phase alloys also exhibited a good combination of cold workability and LTE properties. These results suggest that the Cu-Zn-Al alloys with high electrical conductivity of about 20% International Annealed Copper Standard (%IACS) have high potential as a new class of Invar alloys that can be applied in various fields.     

掺杂位置对基于马赫-曾德尔干涉的硅光调制器的消光比的影响

在基于马赫-曾德尔干涉的硅光调制器中,载流子吸收会极大的影响器件的消光比。并且,不同的掺杂位置会引起注入的载流子的分布不一样,从而导致不同的消光比。从实验上研究了这一现象,实验中的器件采用0.18 μm CMOS工艺制作在SOI材料上。实验表明,掺杂位置离脊波导的边沿0.5 μm左右时,器件会获得最佳的消光比。     

Effect of doping concentration on the properties of bismuth doped tin sulfide thin films prepared by spray pyrolysis

Bismuth doped tin sulfide (SnS:Bi) thin films were deposited onto glass substrates by the spray pyrolysis technique at the substrate temperature of 350 °C. The effect of doping concentration [Bi/Sn] on their structural, optical and electrical properties was investigated as a function of bismuth doping between 0 and 8 at%. The XRD results showed that the films were polycrystalline SnS with orthorhombic structure and the crystallites in the films were oriented along (111) direction. Atomic force microscopy revealed that the particle size and surface roughness of the films increased due to Bi-doping. Optical analysis exhibited the band gap value of 1.40 eV for SnS:Bi (6 at%) which was lower than the band gap value for 0 at% of Bi (1.60 eV). The film has low resistivity of 4.788×10⁻¹ Ω-cm and higher carrier concentration of 3.625×10¹⁸ cm⁻³ was obtained at a doping ratio of 6 at%.