p型方钴矿化合物BayFeCo3Sb12的热电性能研究

用两步固相反应法合成了单相的p型BayFeCo3Sb12化合物,并系统地研究了Ba不同填充分数对方钴矿化合物热电性能的影响:化合物载流子浓度强烈地依赖于填充原子的填充分数,随Ba填充分数y的增加,载流子浓度及电导率降低;塞贝克系数随温度T的上升而增加,比CoSb3的塞贝克系数有一定程度的提高,尤其是在中温部分有大幅度提高,得到的最大塞贝克系数由CoSb3的107μVK-1提高到Ba1.0FeCo3Sb12的235μVK-1晶格热导率随Ba的填充分数y的增加而进一步下降,Ba08FeCo3Sb12甚至降到2.2 Wm1K1;Ba08FeCo3Sb12化合物显示最大热电性能指数,在850K左右其最大无量纲热电性能指数ZT值达0.75.     

制备工艺对Ca_3Co_4O_9/Bi_2Ca_2Co_2O_y复合热电材料组织和性能的影响

采用助熔剂法和固相反应法分别合成了Ca_3Co_4O_9和Bi_2Ca_2Co_2O_y粉体。配比后分别通过冷压、冷等静压、热压三种制备工艺制得组织取向和致密度不同Ca_3Co_4O_9/Bi_2Ca_2Co_2O_y块体复合材料,测量表征了其热电性能和物相形貌。结果表明,冷等静压工艺减弱了材料中颗粒的取向,降低了热导率,973 K时为1.35 W·K~(–1)·m~(–1);热压工艺提高了样品的致密度,降低了电阻率,973 K时功率因子达到了4.0×10~(–4) W·m~(–1)·K~(–2)。     

微波烧结法制备Bi_2O_3-ZnO-Ta_2O_5陶瓷

研究了三元体系Bi2O3-ZnO-Ta2O5微波陶瓷的微波烧结情况,从烧结机理、陶瓷结构、显微形貌和介电性能等方面对微波烧结的样品和常规烧结样品进行了比较.实验结果表明,微波烧结大幅度缩短了烧结时间,并且很好地促进了Bi2O3-ZnO-Ta2O5陶瓷的致密化,制成的样品晶粒细小均一,且介电性能在一定程度上得到了优化.     

提高热电优值的途径和方法研究

如何调节热电功率、电导率和热导率以实现热电优值(ZT值)的大幅增加一直是个尚未有效解决的研究课题。介绍了通过提高功率因子和降低热导率这两种途径来提高热电材料的热电优值的方法,阐述了有关热电材料的一些重要理念以及影响热电性能的因素。     

Na掺杂Bi_2O_3-ZnO-Nb_2O_5基陶瓷的性能

采用固相反应法制备了(Bi2–xNax)(Zn1/3Nb2/3)O7陶瓷,研究了Na+替代Bi3+对Bi2(Zn1/3Nb2/3)2O7基陶瓷烧结性能、显微结构和介电性能的影响。替代后样品的烧结温度从960℃降至约880℃;当替代量x≤0.20时,相结构保持单一的单斜焦绿石相,随替代量进一步增加出现立方相;温度为–30～+130℃,替代后样品出现明显的介电弛豫现象,弛豫过程中的激活能约为0.40eV。用缺陷偶极子和晶格畸变对Na掺杂Bi2(Zn1/3Nb2/3)2O7基陶瓷的介电弛豫现象作出简要解释。     

低维Bi_2Te_3热电材料的制备与性能研究

用溶剂热法制备了直径在100nm以内的一维针状及厚20～30nm、长几微米的二维花朵状Bi2Te3热电材料,分析了不同形貌产物的生长机理,并对其热电性能进行了比较。结果表明,添加剂的分子结构对产物形貌起决定性作用。不同形貌产物的热电性能随温度变化的机制不同,一维纳米结构Bi2Te3产物的功率因子随温度升高而增加,最大值为143.1μΩ·m–1K–2。而二维纳米结构的Bi2Te3产物虽然在室温附近有较大的Seebeck系数,约100μV/K,但由于其电导率较低,功率因子在较宽的温度范围内保持在23μΩ·m–1K–2左右。     

Bi_2O_3掺杂对BLTN微波介质陶瓷性能影响研究

主要采用固相反应法,将原料粉体经过混料、球磨、预烧、成型和烧结后制备Ba_3La_2Ti_2Nb_2O_(15)(BLTN)微波介质陶瓷。研究了不同量的Bi_2O_3掺杂对BLTN微波介质陶瓷烧结行为、显微结构和介电性能的影响。结果表明:Bi_2O_3的添加不仅能有效降低BLTN陶瓷的烧结温度,而且显著提高了其相对介电常数(ε_r)和品质因数。当Bi_2O_3添加量为0.2%(质量分数)时,陶瓷的烧结温度由1440℃降低到1360℃,并呈现较好的微波介电性能:ε_r=55,Q·f=13 500 GHz(4.71 GHz),τ_f=–2.35×10~(-6)℃~(-1)。     

Ca_3Co_4O_9热电材料前驱体制备及性能表征

分别采用固相反应法和空间俘获法制备了Ca3Co4O9前驱体,并经冷等静压后常压烧结工艺制备了块体陶瓷样品。利用TG-DSC、XRD、SEM等方法对前驱体进行了表征,同时测试了陶瓷样品的热电性能。结果表明:空间俘获法可获得纯相、晶粒较小的前驱粉体,同时降低了合成温度,而且合成样品的Seebeck系数和功率因子明显高于固相反应法。在976 K获得最大Seebeck系数和功率因子分别为179μV/K、7.5×10–7 W/(cm·K2),较固相反应优化60%、16倍;电阻率略有升高。     

无机及有机高分子材料的热电特性测量

为了发展无污染的热电转换清洁能源,近年来国内外加速对无机和有机热电材料的研究,而对于高阻值无机和有机热电材料的宽温区热电转换性能测试方面,目前很多研究学者仍遇到一些困难。本文论述了最新研制的一种高阻值、宽温区塞贝克系数测量系统,该系统设计制造了具有高真空度和多重电磁屏蔽的真空测试环境,一个高稳定度、高精度的温差控制平台以及在高阻条件下的微弱电压信号检测的电路系统,从而为无机、有机高分子材料薄膜或块状样品提供一种准确、稳定、精度高?操作方便、快速的测量装置,实现温度从低温 80Ｋ到高温大于500Ｋ的宽温区范国内连续变化,可准确测量超高电阻>1012Ω的材料的塞贝克系数。     

制备工艺对新型热电材料制冷性能的影响

通过取点法得到了由Ingot法、BM法、S-MS法和Te-MS法制备的四种新型p型热电材料(Bi0.5Sb1.5)Te3的变物性参数拟合公式,分析了温度对不同方法制备的热电材料的影响,得到了热电材料无量纲优值与绝对温度的关系曲线.从热力学方面研究了制备工艺对基于新型热电材料的热电制冷器最大制冷系数的影响.结果表明:由Te-MS法制备的新型p型热电材料(Bi0.5Sb1.5)Te3具有最大的优值系数,基于该材料的热电制冷器最大制冷系数可达2.49,较其他三种方法制备的热电材料分别提升了 34.59％,37.57％和25.76％.     

Electrodeposition of MWNT/Bi2Te3 Composite Thermoelectric Films

The effect of multiwalled carbon nanotubes (MWNTs) on the electrochemical behavior of the Bi-Te binary system in nitric acid baths was investigated by means of cyclic voltammetry and electrochemical impedance spectroscopy. Based on the results, MWNT/Bi₂Te₃ composite thermoelectric films were prepared by potentiostatic electrodeposition at room temperature. The morphology, composition, and structure of the MWNT/Bi₂Te₃ composite films were analyzed by environmental scanning electron microscopy, energy-dispersive spectroscopy, and x-ray diffraction. The results show that addition of MWNTs to the electrolyte did not change the electrochemical reduction mechanisms of Bi³⁺, HTeO ₂ ⁺ or their mixture, but the reduction processes of Bi³⁺, HTeO ₂ ⁺ , and their mixture become easier. MWNT/Bi₂Te₃ composite thermoelectric films can be obtained by potentiostatic electrodeposition at a wide range of potentials with subsequent annealing. The MWNTs in the films act as nucleation sites for Bi₂Te₃ compound and thereby elevate the film deposition rate. The content of Bi element and MWNTs in the films increased as the potential was shifted negatively. In addition, the MWNTs can enhance the crystallization of Bi₂Te₃ film.     

添加Bi2ZnB2O7的CLST陶瓷的低温烧结

采用固相法在700℃合成单一相Bi2 ZnB2 O7 (BZB).添加BZB使16CaO-9Li2 O-12Sm2 O3-63TiO2(CLST)陶瓷的烧结温度降至1 050℃.随着烧结温度的升高,样品的体积密度先升高后趋于稳定.介电常数(εr)随着BZB添加量的增大先增大后略有减小,介电损耗(tan δ)则一直降低....     

Preparation of Rectangular WO3·H2O Nanotubes Under Mild Conditions

WO₃·H₂O nanotubes are successfully synthesized with the aid of intercalated polyaniline (PANI) under relatively mild conditions. More interestingly, the WO₃·H₂O nanotubes have a rectangular cross‐section structure formed through a rolling mechanism. Scanning electron microscopy, transmission electron microscopy, X‐ray diffraction, thermogravimetric analysis, Fourier‐transform infrared analysis, UV‐vis‐near‐IR spectroscopy, selected‐area electron diffraction, and vibrating‐sample magnetometry analysis are employed to characterize the morphology, structure, and properties of the nanotubes.     

Preparation and Thermoelectric Properties of Doped Bi2Te3-Bi2Se3 Solid Solutions

Since Bi₂Te₃ and Bi₂Se₃ have the same crystal structure, they form a homogeneous solid solution. Therefore, the thermal conductivity of the solid solution can be reduced by phonon scattering. The thermoelectric figure of merit can be improved by controlling the carrier concentration through doping. In this study, Bi₂Te_2.85Se_0.15:D _m (D: dopants such as I, Cu, Ag, Ni, Zn) solid solutions were prepared by encapsulated melting and hot pressing. All specimens exhibited n-type conduction in the measured temperature range (323 K to 523 K), and their electrical conductivities decreased slightly with increasing temperature. The undoped solid solution showed a carrier concentration of 7.37 × 10¹⁹ cm^?3, power factor of 2.1 mW m^?1 K^?1, and figure of merit of 0.56 at 323 K. The figure of merit (ZT) was improved due to the increased power factor by I, Cu, and Ag dopings, and maximum ZT values were obtained as 0.76 at 323 K for Bi₂Te_2.85Se_0.15:Cu_0.01 and 0.90 at 423 K for Bi₂Te_2.85Se_0.15:I_0.005. However, the thermoelectric properties of Ni- and Zn-doped solid solutions were not enhanced.     

Pb/Bi复掺对Y2O3-2TiO2微波介质陶瓷性能的影响

研究了PbTiO3和Bi2Ti2O7复合掺杂对新型的具有中介电常数的Y2O3-2TiO2系微波介质陶瓷物相组成、介电性能和烧结温度的影响。结果表明,掺杂后的陶瓷材料主晶相仍为A2B2O7型烧绿石结构,未发现第二相,Bi3+和Pb2+共同占据Y3+所在的A位。Pb/Bi复合掺杂有效降低了陶瓷的烧结温度,当w(PbTiO3)=2%和w(Bi2Ti2O7)=8%时,烧结温度降低为1 260℃,且陶瓷具有较好的介电性能,即介电常数rε≈64,介质损耗tanδ≈3.6×10-3,品质因数与频率的乘积Q×f≈2 438 GHz。     

Sm2O3掺杂对BZN基陶瓷介电性能的影响

研究了Sm2O3掺杂的Bi2O3-ZnO-Nb2O5(BZN)基陶瓷(Bi1.5–SmxZn0.5)(Zn0.5Nb1.5)O7(0≤x≤1.5,BSZN)的结构x和介电性能。实验采用传统的固相反应法制备陶瓷样品,XRD分析样品的相结构。结果表明:未掺杂的BZN陶瓷其结构为立方焦绿石单相;当Sm2O3掺杂量较少(0相似文献   

熔盐法制备Bi4Ti3O12的研究

采用NaCl-KCl熔盐法制备了各向异性的Bi4Ti3O12粉体和陶瓷，研究了熔盐含量对粉体尺寸、形貌以及陶瓷的显微组织结构和介电性能的影响。结果表明采用熔盐法可制备出纯Bi4Ti3O12相的粉体和陶瓷，随熔盐含量增加，钛酸铋粉体尺寸及各向异性的程度明显增大；烧结后的Bi4Ti3O12陶瓷晶粒呈片状，且随熔盐含量的增加，钛酸铋陶瓷产生织构；对陶瓷介电性能的研究表明随熔盐含量增加，钛酸铋陶瓷的绝缘电阻率和介电常数增大，介电损耗减小．     

Y3+取代对La2Ti2O7压电陶瓷性能的影响

采用传统固相法合成了不同取代量的类钙钛矿结构YxLa2-xTi2O7陶瓷,研究了Y3+取代对La2Ti2O7压电陶瓷相结构及电性能的影响.结果表明,Y3+的最大固溶量是x=0.20,在固溶极限以下所合成的陶瓷为单一的四层类钙钛矿纯相;A位Y3+的取代使得La2 Ti2 O7陶瓷的介电常数增加,介电损耗减小,且取代后陶瓷...