霍尔式微位移传感器与材料线膨胀系数的测定

线膨胀系数是材料的一个重要参数，准确而且简捷地对其进行测量，具有现实意义．本文将从霍尔式微位移传感器出发，提出一种新的线膨胀系数测量的方法．一、霍尔位移传感器工作原理霍尔元件置于磁场中，在一定电流的激励下就可以产生霍尔电势UH＝KIB如果保持霍尔元件的激励电流不变，而使其在一个均匀梯度的磁场中移动时，则输出的霍尔电势只决定于它在磁场中的位移量，据此，即可对微位移进行测量．均匀梯度磁场的产生机理如图1所示．选用两块相同的磁性材料（一般选用秋铁硼材料），磁极相对而放，两磁极之间留一空隙，霍尔元件水平放于…     

基于霍尔效应测量电磁辐射的研究

电磁辐射带来的危害近些年来逐渐引起人们的关注,研究便携式电磁辐射检测仪成为当下的一个热点。为了探究利用霍尔效应测量电磁辐射的方法与效果,我们利用AH49E线性霍尔传感器进行实验。首先让霍尔元件表面垂直于磁场方向,分别对静磁场和交变磁场的强度进行了测量,实验结果很好地验证了利用霍尔元件测量电磁辐射的可行性;接着,让3个霍尔元件相互正交,从而得到一个简易的全向探头;将全向探头固定在与磁场方向呈不同夹角的位置,进行验证实验,结果显示全向探头可以很好地测量任意方向的磁场强度。     

霍尔效应测量中的不等位热扩散电势差

尽管常规换向直流法可消除已知副效应干扰并得到霍尔电压，但它掩盖了存在未知附加电势的实验事实。将4次换向测量归纳为磁场与样品电流同相组合和反相组合，根据在磁场中样品电流和热扩散电流具有相似物理行为，必须考虑不等位热扩散电势差的影响。这一方案不仅更清晰地解释4次换向测量平均的物理原理，还通过同相测量平均和反相测量平均之差与和得到不等位热扩散电势差与确定且可重复的霍尔电压。实验事实及分析结果表明，引入不等位热扩散电势差才能完整描述霍尔测量中所有副效应的贡献。     

径向磁场对霍尔推力器性能影响的数值模拟研究

霍尔推力器由于推力密度大、结构简单等特点,在商业航天领域具有广泛的应用前景.为了进一步提升小功率霍尔推力器的性能,克服低轨卫星用小功率霍尔推力器性能受限于输入功率和最大磁场强度的问题,本文利用数值模拟和理论分析方法研究了霍尔推力器放电通道中径向磁场分布对推力器性能的影响.在轴向磁场分布和最大径向磁场强度一定的情况下,通过改变径向磁场梯度实现径向磁场对推力器性能影响的研究.结果表明,在放电参数、推进剂流率以及轴向磁场不变的情况下,加速区的电势随着径向距离的增加而减小.因此,靠近推力器放电通道内壁侧的径向磁场梯度越大,离子沿着轴向漂移到达推力器出口的动能越大,推力器的推力越大.本文的研究结果为霍尔推力器的磁场设计,性能优化提供了理论支撑.     

霍尔推力器磁场位形及其优化的数值研究

基于麦克斯韦方程,在轴对称假设下建立了霍尔推力器磁场的数学模型.用有限差分方法对模型进行了离散.给出了数值求解模型的迭代法.通过对模型的数值求解,得到了相应的数值结果.通过对所得数值结果的分析,研究了磁场线圈电流变化对霍尔推力器磁场位形的影响.通过调整磁场线圈电流的大小找到了理想磁场位形.研究表明,对于理想磁场位形,内通道的磁镜比在3—3.5之间,外通道的磁镜比在0.4—0.9之间;增加磁场线圈的电流,出口的磁场强度随着增加,但不能增加磁镜比.通道内部的磁场强度几乎不随着磁场线圈电流的变化而变化. 关键词： 霍尔推力器 磁场位形 磁场线圈电流 磁镜比     

霍尔效应实验数据的新应用——提取副效应与螺线管参数

基于霍尔效应测量通电螺线管内部磁场的实验数据,提出了评估霍尔元件副效应的方法,包括霍尔元件的不等势电压降以及能斯托效应和里纪-勒杜克效应引起的附加电势,并详细讨论了它们对结果的影响.进一步,借助Origin软件,利用通电螺线管磁场分布的理论公式拟合相应的实验数据,非常准确地估测了螺线管的基本参数,包括螺线管总匝数、长度及平均半径等.     

可调梯度磁场下霍尔位置传感器与弯曲法杨氏模量的测量

在利用霍尔位置传感器采用弯曲法测量杨氏模量实验中,由于梯度磁场线性范围小于2mm,要求实验中霍尔元件必须在限定的±2 mm内移动。若操作不当,霍尔元件进入磁场非线性区,会致使实验数据的不准确测量,导致实验误差偏大。所测量杨氏模量值相对误差往往高于10%,甚至会高达40%。针对实验中梯度磁场线性范围小导致测量误差大的问题,采用反亥姆赫兹线圈实现梯度可调节大范围均匀梯度磁场的构建对仪器进行改进。结果表明,改进后的实验装置显著提高了实验测量结果的精度,并可实现较易形变固体材料杨氏模量的测量,并且可方便研究较易形变固体材料的应力及应变的关系。     

演示小位移传感器的装置制作

本文介绍了半导体材料的霍尔效应及磁阻效应,讨论了霍尔磁阻元件的特性,提出位移传感器的工作原理、结构设计,并详细说明安装和调试过程.演示装置结构简单、物理概念清晰、易于操作.它将磁场的变化无接触转化为材料的电阻变化,从而把与磁场变化相联的位移形式转化为电信号输出,形成位移传感器.由实验数据和图示曲线表明:测量桥路输出电压随磁钢和霍尔片之间的距离变化而变化;另外,测量桥路的测量灵敏度随工作电流IC增加而提高.通过本装置可以对霍尔磁阻效应、一种小位移测量传感器原理和方法进行演示和探究.在课堂教学、课程设计等场合,直观显示霍尔元件的各种效应和技术应用,有着良好的教学效果.     

磁场强度对霍尔推力器放电特性影响的实验研究

为探索霍尔推力器通道内优化磁场的标准,本文研究了磁场强度对其放电特性的影响规律.通过在保持磁场形貌不变（“聚焦”形）下改变磁场强度的大小,使用朗缪尔探针、光谱仪等测量手段分析了工作于不同磁安特性曲线段的推力器放电特性.研究表明：当磁场强度小于优化值时,电子横越磁场的传导以近壁传导机制为主;反之,当磁场强度大于优化值时,放电电流反常变化,而现有的电子输运传导机制不能解释这种现象. 关键词： 霍尔推力器 磁场强度 放电特性     

高性能石墨烯霍尔传感器

本文回顾了石墨烯霍尔传感器的相关研究工作.通过改善石墨烯生长转移和霍尔元件的微加工工艺,石墨烯霍尔元件和霍尔集成电路都展示出超越传统霍尔传感器的优异性能.石墨烯霍尔元件的灵敏度、分辨率、线性度和温度稳定性等重要指标都优于传统商用霍尔元件.通过开发一套钝化工艺,霍尔元件的稳定性有了明显提升.结合石墨烯材料的特点,展示了石墨烯在柔性磁传感和多功能传感领域的新颖应用.此外,成功实现了石墨烯/硅互补型金属-氧化物-半导体(CMOS)混合霍尔集成电路,并进行了应用展示.通过发展一套低温加工工艺(不超过180℃),将石墨烯霍尔元件制备在硅基CMOS芯片的钝化层上,从而与硅基CMOS电路实现了单片集成.本文的研究结果表明石墨烯在霍尔磁探测方向拥有重大的性能优势,在产业化应用中有巨大发展潜力.     

A Hall effect angle detector for solid-state NMR

We describe a new method for independent monitoring of the angle between the spinning axis and the magnetic field in solid-state NMR. A Hall effect magnetic flux sensor is fixed to the spinning housing, so that a change in the stator orientation leads to a change in the angle between the Hall plane and the static magnetic field. This leads to a change in the Hall voltage generated by the sensor when an electric current is passed through it. The Hall voltage may be measured externally by a precision voltmeter, allowing the spinning angle to be measured non-mechanically and independent of the NMR experiment. If the Hall sensor is mounted so that the magnetic field is approximately parallel to the Hall plane, the Hall voltage becomes highly sensitive to the stator orientation. The current angular accuracy is around 10 millidegrees. The precautions needed to achieve higher angular accuracy are described.     

Planar Hall effect in biosensor with a tilted angle of the cross-junction

A typical planar Hall effect (PHE) sensor junction consists of two Hall bars that the bars appear normal to each other and the junction can have the required four terminals for current and voltage measurements. We are now introducing a tilted angle of the cross-junction and studying the role of the PHE therein. The results show that although there is a tilted angle of the cross-junction, the PHE voltage is remained constant. The result is interpreted by assuming the sensor material with the behavior of a basic single domain structure under the external magnetic field reversals. The calculations of the model are found to be in good concurrence with the experimental results.     

基于PID算法的磁场闭环控制技术研究

已有的束流磁场控制方法大多采用开环的方式,即根据磁场需求直接设置磁铁电源输出的电流或电压值。但开环状态的磁场在现场噪声以及磁铁自身涡流效应的影响下,极容易发生偏移。针对此问题,设计了基于PID算法的磁场闭环控制系统。该系统以偏转磁铁为控制对象,使用霍尔传感器获取磁场值作为反馈,磁铁电源励磁电流的输出作为控制系统的输入量。控制器使用PID算法对磁铁电源输出进行自动调整,从而实现对磁场的闭环控制。最终结果表明,在PID参数调试得当的情况下,使用磁场在线测量值作为反馈信号,去实时调节磁铁电源的励磁电流大小的闭环控制方法,可以有效地降低磁场偏移。     

Interaction between Vacuum Arcs and Transverse Magnetic Fields with Application to Current Limitation

The interaction between diffuse vacuum arcs and magnetic fields applied transverse to the electrode axis has been investigated both theoretically and experimentally. For arc currents < 6 kA, Hall electric fields, generated by the interaction, bow the plasma out of contact with the anode and raise the arc voltage. In the presence of a parallel capacitor, the arc current falls to zero and the arc is extinguished. For arc currents of 6 to 15 kA, arc extinction can be achieved with an oscillatory magnetic field; during such extinctions the arc voltage remains in phase with the magnitude of the field. Arc extinction via magnetic field/vacuum arc interaction could have applications to ac-current limiters and dc breakers. The fault current limiter application is discussed in this paper.     

Multipeak Kondo effect in one- and two-electron quantum dots

We have fabricated a few-electron quantum dot that can be tuned down to zero electrons while maintaining strong coupling to the leads. Using a nearby quantum point contact as a charge sensor, we can determine the absolute number of electrons in the quantum dot. We find several sharp peaks in the differential conductance, occurring at both zero and finite source-drain bias, for the one- and two-electron quantum dot. We attribute the peaks at finite bias to a Kondo effect through excited states of the quantum dot and investigate the magnetic field dependence of these Kondo resonances.     

Quantum hall effect in an antidot lattice: Macroscopic limit

The quantum Hall effect in a 2D system with antidots is studied. The antidots are assumed to be large compared with the quantum and relaxation lengths. In this approximation the electric field in the system can be described by the continuity equation. It is found that the electric field in a system without conducting boundaries can be expressed in terms of the same system without a magnetic field. Specific problems of the electric field and current in structures containing one or two antidots and in a circular disk with point contacts are solved. The effective Hall and longitudinal conductivities in a sample containing a large number of randomly distributed antidots are found. In the limit of zero local longitudinal conductivity, the effective longitudinal conductivity also vanishes, and the Hall conductivity is equal to the local conductivity. The corrections to the conductivity tensor which are due to the finiteness of the local conductivity are obtained. Breakdown of the quantum Hall effect in a lattice of antidots is studied on the basis of the assumption that a high current density in narrow locations of the system results in overheating of the electrons. Local and nonlocal models of over-heating are studied. The high-frequency effective conductivity of a system with antidots and the shift of the cyclotron resonance frequency are found.     

自旋轨道耦合系统中的自旋流与自旋霍尔效应

作为自旋电子学的重要研究内容,如何在固态系统中产生、操控以及探测自旋流引起了研究人员的广泛兴趣。基于自旋轨道耦合的自旋霍尔效应为在非磁性半导体中产生自旋流提供了一种有效途径。然而,在具有自旋轨道耦合的系统中,自旋流并不守恒。如何理解这点并恰当地表述相应的连续性方程,成为自旋输运研究的基本问题之一。本文主要综述自旋轨道耦合系统中自旋流与自旋霍尔效应方面的研究进展。引入SU(2)规范势后,自旋流满足协变形式的连续性方程,该方程保证了SU(2)Kubo公式在不同规范固定下的自洽性。利用SU(2)场强张量,可以直接得到自旋密度和自旋流在SU(2)外场中受到的自旋力,该力在只有U(1)磁场时对应于Stern-Gerlach力。由于依赖杂质散射的外在自旋霍尔效应很难被利用,内在自旋霍尔效应的概念被提出:在非磁半导体中,U(1)电场会诱导出自旋流并导致系统边缘处的自旋积累。自旋霍尔效应已经在半导体和金属材料中被观察到。虽然在干净的二维电子气中自旋霍尔电导率是一普适常数e/8π,但杂质对它的影响却引起了人们的高度关注。通过引入退相干效应,自旋霍尔效应中杂质效应的一些令人困惑的理论结果,则得到清晰的解释。此外,本文还将介绍具有层间隧穿的双层二维电子气中的自旋输运现象。在能量简并点附近,自旋霍尔电导率和隧穿自旋电导率均会出现共振现象。当两层间的杂质势强度存在差异时,隧穿自旋电导率随门压的变化曲线呈现出非对称性,显示出自旋二极管效应。     

自旋轨道耦合系统中的自旋流与自旋霍尔效应

作为自旋电子学的重要研究内容,如何在固态系统中产生、操控以及探测自旋流引起了研究人员的广泛兴趣.基于自旋轨道耦合的自旋霍尔效应为在非磁性半导体中产生自旋流提供了一种有效途径.然而,在具有自旋轨道耦合的系统中,自旋流并不守恒.如何理解这点并恰当地表述相应的连续性方程,成为自旋输运研究的基本问题之一.本文主要综述自旋轨道耦合系统中自旋流与自旋霍尔效应方面的研究进展.引入SU(2)规范势后,自旋流满足协变形式的连续性方程,该方程保证了SU(2)Kubo公式在不同规范固定下的自洽性.利用SU(2)场强张量,可以直接得到自旋密度和自旋流在SU(2)外场中受到的白旋力,该力在只有U(1)磁场时对应于Stern-Gerlach力.由于依赖杂质散射的外在自旋霍尔效应很难被利用,内在自旋霍尔效应的概念被提出:在非磁半导体中,U(1)电场会诱导出自旋流并导致系统边缘处的自旋积累.自旋霍尔效应已经在半导体和金属材料中被观察到.虽然在干净的二维电子气中自旋霍尔电导率是一普适常数e/8π,但杂质对它的影响却引起了人们的高度关注.通过引入退相干效应,自旋霍尔效应中杂质效应的一些令人困惑的理论结果,则得到清晰的解释.此外,本文还将介绍具有层间隧穿的双层二维电子气中的自旋输运现象.在能量简并点附近,自旋霍尔电导率和隧穿白旋电导率均会出现共振现象.当两层间的杂质势强度存在差异时,隧穿自旋电导率随门压的变化曲线呈现出非对称性,显示出自旋二极管效应.     

Electrical measurement of spin Hall current in mesoscopic ring: inhomogeneous Rashba effect

We investigate theoretically the spin Hall current in an inhomogeneous Rashba mesoscopic ring attached to four terminals. It is shown that a voltage drop can be tuned by adjusting the gate voltage due to the inhomogeneous Rashba effect, and provides us a tool to measure spin Hall current electrically. The spin Hall current and the ratio of the probe voltages can survive and keep their obvious relationship even in the presence of disorder. The regular relationship between the spin Hall conductance and the ratio of the probe voltages will be destroyed by the interference between different channels in multi-channel ring.     

Hall effect and negative magnetoresistance in thin crystals of NbSe<Subscript>3</Subscript>

We have measured the Hall effect and the transverse magnetoresistance in NbSe₃ single crystals. In the liquid helium temperature range we observed an absolute negative magnetoresistance (NMR) — the value of the resistance under magnetic field being much lower than that at zero field — in NbSe₃ single crystals with a thickness less than 5 μm with the magnetic field oriented in the (b, c) plane. We show that this NMR effect is observed in the magnetic field range in which the Hall constant changes its sign. The results are qualitatively explained by the change of the surface scattering contribution to the magnetoconductance in the magnetic field range near the Hall voltage zero crossing.