椭圆偏振技术研究VHF-PECVD高速沉积微晶硅薄膜的异常标度行为

采用VHF-PECVD技术高速沉积了不同生长阶段的微晶硅薄膜,通过椭圆偏振技术研究了生长过程中微晶硅薄膜表面粗糙度的演化.实验结果表明,沉积气压P_g=300 Pa时,β=0.81,其超出标度理论中β最大值为0.5范围,出现异常标度行为.这表明微晶硅薄膜高速生长中还存在其他粗糙化增加的因素,此粗糙化增加的因素与阴影作用有关. 关键词： 微晶硅薄膜 椭偏光谱法 生长机制 表面粗糙度     

块体非晶合金的黏度与玻璃形成能力的关系

基于经典结晶理论讨论了非晶合金的晶化动力学因素和晶化热力学因素对玻璃形成能力（GFA）的影响.分析表明,合金的等温转变（TTT）曲线“鼻尖”温度T_n对应的黏度与晶化阻力因子成正比;重新加热时晶化开始温度T_x对应的黏度与晶化驱动力因子成反比.由此得到了新的GFA参数ω₀=（T_g-T₀）/（T_x-T₀）-（T_g-T₀）/（T_n-T₀）,其中T_g为玻璃转变温度,T₀为理想玻璃转变温度.统计结果显示,ω₀与临界冷却速率具有较高的相关性,R²高达09626.进一步分析表明：新提出的ω₀参数可以合理地解释过冷熔体的黏度、脆性、液相稳定性、热稳定性以及T_rg、ΔT_x、γ、γ_m、ΔT_rg、α、β、δ和φ等参数与GFA的关系. 关键词： 块体非晶合金 黏度 脆性 玻璃形成能力     

沉积速率对甚高频等离子体增强化学气相沉积制备微晶硅薄膜生长标度行为的影响

本文采用甚高频等离子体增强化学气相沉积技术制备了沉积速率系列不同生长阶段的微晶硅薄膜,通过椭圆偏振技术研究了生长过程中微晶硅薄膜表面粗糙度的演化.实验结果表明:沉积速率为0.08和0.24nm/s的低速沉积时,硅薄膜表面粗糙度接近,生长指数分别为β=0.21和β=0.20,对应有限扩散生长模式,此时沉积速率对硅薄膜生长影响不大,原因是低速沉积时成膜先驱物有足够时间迁移到能量低的位置;当沉积速率增加到0.66nm/s时,硅薄膜表面粗糙度明显增加,生长指数β=0.81,大于0.5,出现了异常标度行为,与低速沉积的生长模式明显不同,原因是高速沉积时成膜前驱物来不及扩散就被下一层前驱物覆盖,降低了成膜前驱物在薄膜表面的扩散,使表面粗糙度增加和生长指数β增大.β大于0.5的异常标度行为与阴影效应有关.     

微晶硅薄膜的表面粗糙度及其生长机制的X射线掠角反射研究

采用等离子体增强化学气相沉积技术沉积一系列处于不同生长阶段的微晶硅薄膜.通过同步辐射X射线掠角反射技术研究微晶硅薄膜的表面粗糙度随时间等的演化，探讨微晶硅薄膜的生长动力学过程及其生长机制.研究结果表明，在衬底温度为200 ℃，电极间距为2 cm，沉积气压为6.66×1０² Pa，射频功率密度为0.22 W/cm²，氢稀释度分别为99%和98%的沉积条件下，在玻璃衬底上生长的微晶硅薄膜生长指数β分别为0.21±0.01和0.24±0.01.根据KPZ模型，微晶硅薄膜的生长机制为有限扩散生长. 关键词： X射线掠角反射 微晶硅薄膜 表面粗糙度 生长机制     

关于MgB2/Al2O3超导薄膜电阻转变和各向异性的研究

利用电子束蒸发方法将MgB₂超导薄膜沉积到Al₂O₃(001)衬底上.采用标准的四引线法研究了磁场平行和垂直超导薄膜ab平面下的电阻转变.一个激活能模型 U(T,H)=U₀(1-T/(T_c+δ))ⁿ(1-H/H 关键词： 2/Al₂O₃')" href="#">MgB₂/Al₂O₃ 超导体 电阻转变 各向异性     

应力作用下EuTiO3铁电薄膜电热效应的唯象理论研究

基于Laudau-Devonshire的热动力学模型, 计算了EuTiO₃铁电薄膜材料的电热效应. 结果显示在外加应力的调控下, 电极化、电热系数以及绝热温差都会随之变化. 外加垂直于表面的张应力加大, 薄膜的相变温度升高, 绝热温差增加, 最大绝热温差所对应的工作温度向高温区移动. 对于二维平面失配应变u_m =-0.005的薄膜, 当外加张应力σ₃ = 5 GPa时, 其最大电热系数为1.75×10^-3 C/m²·K, 电场变化200 MV/m 时室温下绝热温差ΔT 的最大值可达到14 K 以上, 绝热温差ΔT ≥13 K 的工作温区超过120 K, 表明可以通过调控外部应力来获取室温时较大的绝热温差. 此结果预示着铁电EuTiO₃ 薄膜在室温固态制冷方面可能具有较好的应用前景.     

Co(S1-xSex)2系统中的铁磁量子相变

针对Co(S_1-xSe_x)₂系统在x=0.11附近发生的铁磁金属到顺磁金属相变,制备了一系列不同Se替代浓度的多晶样品.通过对其结构和电阻率-温度ρ(T)关系的系统观测,结果发现,样品铁磁相变温度T_C随着Se替代浓度x值的增加,以(1-x)^1/2关系单调下降,其二级铁磁相变转变为一级相变 关键词： 量子相变 自旋量子涨落 1-xSe_x)₂')" href="#">Co(S_1-xSe_x)₂     

钙钛矿型锰氧化物(La$lt;sub$gt;0.8$lt;/sub$gt;Eu$lt;sub$gt;0.2$lt;/sub$gt;)$lt;sub$gt;4/3$lt;/sub$gt;Sr$lt;sub$gt;5/3$lt;/sub$gt;Mn$lt;sub$gt;2$lt;/sub$gt;O$lt;sub$gt;7$lt;/sub$gt;的磁性和电性研究

采用传统固相反应法制备钙钛矿型锰氧化物 (La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇多晶样品, X-射线衍射分析表明, 样品(La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇结构呈现良好的单相. 通过磁化强度随温度的变化曲线(M-T)、不同温度下磁化强度随磁场的变化曲线(M-H)和电子自旋共振谱发现: 在300 K以下, 随着温度的降低, 样品先后经历了二维短程铁磁有序转变 (T_C^2D ≈ 282 K)、三维长程铁磁有序转变(T_C^3D ≈ 259 K)、奈尔转变(T_N ≈ 208K)和电荷有序转变(T_CO ≈ 35 K); 样品 (La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇在T_N以下, 主要处于反铁磁态; 在T_C^3D达到370 K时, 样品处于铁磁-顺磁共存态, 在370 K以上时样品进入顺磁态. 此外, 分析电阻率随温度的变化曲线(ρ-T)得到: 样品在金属-绝缘转变温度(T_P ≈ 80 K)附近出现最大磁电阻值, 其位置远离T_C^3D, 表现出非本征磁电阻现象, 其磁电阻值约为61%. 在T_CO以下, 电阻率出现明显增长, 这是由于温度下降使原本在高温部分巡游的e_g电子开始自发局域化增强所致. 通过对 (La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇的ρ-T 曲线拟合, 发现样品在高温部分的导电方式基本遵循小极化子的导电方式. 关键词： 磁性 电性 金属-绝缘转变温度 电子自旋共振     

椭偏透射法测量氢化非晶硅薄膜厚度和光学参数

针对多角度椭偏测量透明基片上薄膜厚度和光学参数时基片背面非相干反射光的影响问题,报道了利用椭偏透射谱测量等离子增强化学气相沉积法(PECVD)制备的a-Si:H薄膜厚度和光学参数的方法,分析了基片温度T_s和辉光放电前气体温度T_g的影响.研究表明,用椭偏透射法测量的a-Si:H薄膜厚度值与扫描电镜(SEM)测得的值相当,推导得到的光学参数与其他研究者得到的结果一致.该方法可用于生长在透明基片上的其他非晶或多晶薄膜. 关键词： 椭偏测量 透射法 光学参数 氢化非晶硅薄膜     

含氮氟化类金刚石(FN-DLC)薄膜的研究：(Ⅲ)疏水性能分析

不同沉积条件下，在单晶硅基底上沉积了含氮氟化类金刚石(FN-DLC)薄膜，用静滴接触角/表面张力测量仪测量了水与FN-DLC膜表面的接触角.用X射线光电子能谱、Raman光谱和傅里叶变换吸收红外光谱(FTIR)分析了薄膜的组分和结构.用原子力显微镜观测了薄膜的表面形貌.结果表明，FN-DLC薄膜疏水性能主要取决于薄膜表面的化学结构、薄膜表面极化强度的强弱、以及薄膜的表面粗糙度的大小.sp³/sp²的比值减小，CF₂基团含量增加，薄膜粗糙度增加，接触角增大；反之，则接触角减小.在工艺上，沉积温度和功率的减小，气体流量比r(r=CF4/［CF₄+CH₄］)的增加，都会使水的浸润性变差，接触角增大. 关键词： 氟化类金刚石膜 疏水性 接触角     

Atomic force microscopy study of growth kinetics: Scaling in TiN-TiB2 nanocomposite films on Si(1 0 0)

We used the reactive unbalanced close-field dc-magnetron sputtering growth of TiN-TiB₂ on Si(1 0 0) at room temperature to determine if scaling theory provides insight into the kinetic mechanisms of two-phase nanocomposite thin films. Scaling analyses along with height-difference correlation functions of measured atomic force microscopy (AFM) images have shown that the TiN-TiB₂ nanocomposite films with thickness ranging from 70 to 950 nm exhibit a kinetic surface roughening with the roughness increasing with thickness exponentially. The roughness exponent α and growth exponent β are determined to be ∼0.93 and ∼0.25, respectively. The value of dynamic exponent z, calculated by measurement of the lateral correlation length ξ, is ∼3.70, agreeing well with the ratio of α to β. These results indicate that the surface growth behavior of sputter-deposited TiN-TiB₂ thin films follows the classical Family-Vicseck scaling and can be reasonably described by the noisy Mullins diffusion model, at which surface diffusion serves as the smoothing effect and shot noise as the roughening mechanism.     

Growth dynamics of ZnPc and TiOPc thin films: Effect of crystallinity on anomalous scaling behavior

The surface morphology evolution and scaling behavior of zinc phthalocyanine (ZnPc) and titanyl phthalocyanine (TiOPc) thin films have been studied using atomic force microscopy, X-ray diffraction and height difference correlation function analysis. In contrast to the large growth exponent (β) values and anomalous scaling behavior previously reported for other crystalline molecular thin films, significantly small β and anomaly values were observed for amorphous TiOPc thin films. The relatively small anomaly value of ZnPc thin films, though larger than that of TiOPc thin films, is also rationalized by the lack of crystallographic ordering at the initial stage of growth.     

Surface morphology of sputter deposited low melting point metallic thin films

This paper describes the development of surface morphology of thin InSn(90/10), In, Sn and Cr films, deposited on unheated glass substrates by d.c. magnetron sputtering, with the film thickness. The experiments show that the surface morphology of metallic films with low melting pointsT _m[InSn(90/10)–150°C, In–156.6°C, Sn–231.8°C] and that with high melting pointT _m [Cr–1875°C] strongly differ. InSn(90/10) and Sn films with thickness greater than about 30 nm and also In films with even lower thickness of about 20 nm have a rough surface, milky color and matt appearance. On the contrary, Cr films of the same thickness have a smooth and shiny surface. It is due to a large difference in normalized temperaturesT/T _m for low-T _m films [Sn–0.59, In–0.70, InSn(90/10) –0.71] and for high-T _m films [Cr–0.14] deposited at low temperatures close to room temperature (RT). High values of the ratioT/T _m>0.5 clearly indicate that just the low melting point materials can crystallize at low temperatures close to RT. A crystallization of lowT _m films results in rough surface, milky color and matt appearance of these films.This work was supported in part by the Grant Agency of Czech Republic under Grant No. 202/93/0508.     

Effect of substrate interactions on the melting behavior of thin polyethylene films

Polymer films have been known to change their physical properties when film thickness is decreased below a certain value. The cause of this phenomenon is still unclear but it has been suggested that interactions and/or chain free-volume changes at the surface of the films are largely responsible for this behavior. In this paper, the effect of substrate interactions on the behavior of polymer thin films is evaluated quantitatively. The infrared spectra of nanothin polyethylene (PE) films were recorded as a function of temperature and amount of substrate covering the surface of the film. The evolution of specific bands in the CH₂ rocking region of the spectra was used to determine the melting temperature (T _m ) of the material. Results show different variations in T _m depending on the nature of the substrate, indicating that interactions dominate free-volume considerations in PE thin films. By varying the amount of surface coverage, a quantitative estimate of the heat of interaction was determined, which confirmed the importance of surface interactions.     

Deposition pressure effect on the surface roughness scaling of microcrystalline silicon films

The scaling behaviour of surface roughness evolution of microcrystalline silicon (μc-Si:H) films prepared by very-high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) has been investigated by using a spectroscopic ellipsometry (SE) technique. The growth exponent β was analysed for the films deposited under different pressures P_g. The results suggest that films deposited at P_g = 70 Pa have a growth exponent β about 0.22, which corresponds to the definite diffusion growth. However, abnormal scaling behaviour occurs in the films deposited at P_g = 300 Pa. The exponent β is about 0.81 that is much larger than 0.5 of zero diffusion limit in the scaling theory. The growth mode of μ c-Si:H deposited at P_g= 300 Pa is clearly different from that of μc-Si:H at P_g = 70 Pa. Monte Carlo simulations indicate that the sticking process and the surface diffusion of the radicals are two key factors to affect the growth mode under different pressures. Under P_g= 300 Pa, β>0.5 is correlated with the strong shadowing effect resulting from the larger sticking coefficient.     

Effect of substrate temperature on microstructure and optical properties of single-phased Ag2O film deposited by using radio-frequency reactive magnetron sputtering method

Using a radio-frequency reactive magnetron sputtering technique,a series of the single-phased Ag2O films are deposited in a mixture of oxygen and argon gas with a flow ratio of 2:3 by changing substrate temperature(T s).Effects of the T s on the microstructure and optical properties of the films are investigated by using X-ray diffractometry,scanning electron microscopy and spectrophotometry.The single-phased Ag2O films deposited at values of T s below 200℃ are(111) preferentially oriented,which may be due to the smallest free energy of the(111) crystalline face.The film crystallization becomes poor as the value of T s increases from 100℃ to 225℃.In particular,the Ag2O film deposited at T s = 225℃ loses the 111 preferential orientation.Correspondingly,the film surface morphology obviously evolves from a uniform and compact surface structure to a loose and gullied surface structure.With the increase of T s value,the transmissivity and the reflectivity of the films in the transparent region are gradually reduced,while the absorptivity gradually increases,which may be attributed to an evolution of the crystalline structure and the surface morphology of the films.     

Block persistence

We define a block persistence probability p _l (t) as the probability that the order parameter integrated on a block of linear size l has never changed sign since the initial time in a phase-ordering process at finite temperature T<T _c . We argue that in the scaling limit of large blocks, where z is the growth exponent (), is the global (magnetization) persistence exponent and f(x) decays with the local (single spin) exponent for large x. This scaling is demonstrated at zero temperature for the diffusion equation and the large-n model, and generically it can be used to determine easily from simulations of coarsening models. We also argue that and the scaling function do not depend on temperature, leading to a definition of at finite temperature, whereas the local persistence probability decays exponentially due to thermal fluctuations. These ideas are applied to the study of persistence for conserved models. We illustrate our discussions by extensive numerical results. We also comment on the relation between this method and an alternative definition of at finite temperature recently introduced by Derrida [Phys. Rev. E 55, 3705 (1997)]. Received: 25 February 1998 / Revised: 24 July 1998 / Accepted: 27 July 1998     

Growth, microstructure and electrical properties of sputter-deposited hafnium oxide (HfO2) thin films grown using a HfO2 ceramic target

Hafnium oxide (HfO₂) thin films have been made by radio-frequency (rf) magnetron-sputtering onto Si(1 0 0) substrates under varying growth temperature (T_s). HfO₂ ceramic target has been employed for sputtering while varying the T_s from room temperature to 500 °C during deposition. The effect of T_s on the growth and microstructure of deposited HfO₂ films has been studied using grazing incidence X-ray diffraction (GIXRD), and high-resolution scanning electron microscopy (HR-SEM) coupled with energy dispersive X-ray spectrometry (EDS). The results indicate that the effect of T_s is significant on the growth, surface and interface structure, morphology and chemical composition of the HfO₂ films. Structural characterization indicates that the HfO₂ films grown at T_s < 200 °C are amorphous while films grown at T_s > 200 °C are nanocrystalline. An amorphous-to-crystalline transition occurs at T_s = 200 °C. Nanocrystalline HfO₂ films crystallized in a monoclinic structure with a (−1 1 1) orientation. An interface layer (IL) formation occurs due to reaction at the HfO₂-Si interface for HfO₂ films deposited at T_s > 200 °C. The thickness of IL increases with increasing T_s. EDS at the HfO₂-Si cross-section indicate that the IL is a (Hf, Si)-O compound. The electrical characterization using capacitance-voltage measurements indicate that the dielectric constant decreases from 25 to 16 with increasing T_s. The current-voltage characteristics indicate that the leakage current increases significantly with increasing T_s due to increased ILs.     

Magnetic properties of thin epitaxial Gd films on Nb

We investigated the magnetic properties of Gd films by magnetization measurements with the transverse magnetooptic Kerr effect in the temperature range from 2 to 295 K and for magnetic field up to 0.3 T. The thicknessd _Gd of the Gd films was varied between 11 and 1000 Å. For thick films (d _Gd500 Å) the form of the hysteresis curves and especially the nonmonotonic temperature dependence of remanence and coercivity can be qualitatively reproduced with a simple model employing theT dependence of the easy-axis direction. TheT dependence of the saturation magnetizationM _s of the thick films (d _Gd>=150 Å) strongly resembles the behavior of bulk crystals, whereas for the thinnest filmsM _s approximately depends linearly onT up to the Curie temperatureT _C . The thickness dependence ofT _C follows approximately a power law with an exponent 1.6 close to the theoretical value.     

Effect of lower growth temperature on C incorporation in GeC epilayers on Si(0 0 1) grown by MBE

Effect of lower growth temperature T_s on C incorporation to substitutional sites in Ge_1−xC_x/Si(0 0 1) grown by molecular beam epitaxy was investigated. To enhance the non-equilibrium growth condition, the temperature T_s was lowered from 600°C down to 300°C. The C incorporation into substitutional sites of GeC epilayers was very sensitive to T_s. X-ray diffraction (XRD) measurement indicated that the substitutional C composition x increased with decrease in T_s from 600°C to 400°C. At T_s350°C, the estimation of x by the XRD analysis was impossible because of polycrystallization. The Raman shift measurement enables to estimate x for T_s350°C, as consequently larger x than that grown at T_s=400°C was verified. The enhancement of non-equilibrium growth condition by decreasing T_s was important to increase x.