射频磁控溅射Al掺杂ZnO薄膜的退火性质分析

采用射频磁控溅射技术制备了高度择优取向的Al掺杂ZnO(ZAO)薄膜,并对所制备的薄膜在纯氩气氛中进行了400℃、1h和2h的退火处理,将前者再于空气中相同温度下退火1h.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、光谱仪和四探针测试仪等对退火前后薄膜进行了表征和光学、电学性能研究.研究表明,退火处理对ZAO薄膜的晶体、光学和电学性能有影响.原位沉积的薄膜电阻率为2.59Ω·cm,可见光区透过率约70%.400℃纯Ar气氛中退火1h后,ZAO薄膜的平均晶粒有所长大,薄膜内应力有所减小;薄膜可见光区平均透过率从70%提高到将近80%;薄膜的电阻率变化不明显,从2.59Ω·cm降低到1.37Ω·cm.400℃纯Ar气氛中退火2h后,薄膜的可见光区透过率和电阻率分别为75%和14.7Ω·cm.400℃纯氩气氛中退火1h再经过空气中退火1h后,薄膜的可见光区透过率和电阻率分别为80%左右和0.69Ω·cm.     

溅射功率对射频磁控溅射Al掺杂ZnO（ZAO）薄膜性能的影响

用射频磁控溅射技术,在纯氩气氛中不同溅射功率（120 W~210 W）下于玻璃衬底上制备了Al掺杂ZnO（ZAO）薄膜。利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）、光谱仪和四探针测试仪等对所制备的薄膜进行了晶体结构、光学和电学性能分析。结果表明,纯氩气氛中不同溅射功率下玻璃衬底上原位沉积的ZAO薄膜具有明显的c轴择优取向性,它没有改变ZnO的六角纤锌矿结构;ZAO薄膜的可见光区平均透光率不强烈依赖于溅射功率,为75%左右;原位沉积ZAO薄膜的电阻率达到102Ω.cm数量级范围,随溅射功率由120 W增大到210 W时,薄膜电阻率从132.67Ω.cm降低到21.08Ω.cm。     

纯Ar气氛中退火对Al掺杂ZnO薄膜性能的影响

用射频磁控溅射技术制备了高度择优取向的Al掺杂ZnO(ZAO)薄膜,并对薄膜在纯氩气中进行了400～600℃的退火处理.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)、光谱仪和四探针测试仪等对退火前后薄膜进行了表征和光学、电学性能研究.研究表明,纯氩气中退火处理对ZAO薄膜的晶体、光学和电学性能有影响.原位沉积的薄膜电阻率2.59Ωcm,可见光区透过率约70%.500℃纯Ar气氛中退火1h后,ZAO薄膜的平均晶粒有所长大,薄膜内应力达到最小,接近于松弛状态;薄膜可见光区平均透过率从70%提高到80%左右;而薄膜的电阻率变化不明显,从2.59Ωcm降低到1.13Ωcm.     

ZnO:Al(ZAO)薄膜的制备与特性研究

采用磁控溅射技术制备了ZnO:Al(ZAO)薄膜.研究了不同的工艺参数对薄膜的组织结构和光电特性的影响.实验结果表明,多晶ZAO薄膜具有(001)择优取向且呈柱状生长,能量机制决定其微观生长状态.讨论了薄膜的内应力,高的沉积温度和低的溅射功率可有效减小薄膜的内应力.优化的ZAO薄膜电阻率和在可见光区的平均透射率可分别达到3×10-4-4×10-4Ω·cm和80％以上.     

透明导电氧化物ZnO:Al(ZAO)薄膜的研究

用磁控反应溅射法制备了ＺｎＯ：Ａｌ薄膜,研究了薄膜方块电阻空间分布的均匀性及微观形貌,并对ＺｎＯ：Ａｌ薄膜表面各元素的化学状态和深度分布进行了ＸＰＳ和ＡＥＳ分析,同时也讨论了薄膜的光学电学性能。     

射频反应磁控溅射法制备ZnO:Al透明导电薄膜的光电性能

室温下采用射频(RF)反应磁控溅射技术在玻璃衬底上沉积具有(002)择优取向的透明导电Al掺杂ZnO(AZO)薄膜。XRD结果表明,制备的AZO薄膜为多晶,具有c轴择优取向。退火处理能提高其结晶度。在Al靶射频功率为40W,ZnO靶射频功率为250W,氩气流量为15mL/min的条件下,获得200nm厚的薄膜电阻率约3.8×10-3?·cm,在可见光范围内有很好的光透过率。     

Fe-Zr-B非晶薄膜退火后的组织与性能

用直流磁控溅射法成功制备了Fe—Zr—B非晶薄膜。用X-射线衍射、透射电镜研究了薄膜不同退火温度后的组织与性能。研究结果表明，薄膜在550℃退火时，其磁感应强度最高，主要原因是因为其结构发生了有利于磁化的bcc相的转变。     

氧化工艺对真空电弧沉积TiN薄膜组织与性能的影响

研究了各种氧化工艺对真空电弧沉积TiN薄膜组织与性能的影响。结果表明，TiN薄膜在400℃于不同时间整体氧化时，表面Ti液滴和TiN相发生不同程度的氧化，转变成具有金红石型的TiO2薄膜，提高了膜层表面的致密性，而TiN薄膜的整体组织结构未发生较大改变。随着氧化时间的延长，在40min后硬度才略有下降，内应力下降，膜层的结合力提高，并具有较好的耐磨性能。     

掺铝氧化锌薄膜的红外性能及机制

采用中频交流磁控溅射氧化锌铝(ZnO 2％Al2O3)陶瓷靶材的方法制备了掺铝氧化锌ZAO(ZnO：Al)薄膜．利用红外光谱仪测试了薄膜的红外反射性能,研究了薄膜厚度、基体温度和氩气压力对ZAO薄膜红外反射性能的影响规律,确定了制备具有高红外反射率的ZAO薄膜的工艺参数．     

Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films

Highly conductive and transparent Al-doped ZnO (AZO) thin films were prepared from a zinc target containing Al (1.5 wt.%) by direct current (DC) and radio frequency (RF) reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment (at 300 and 400 ℃, respectively) were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as tering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.     

退火温度对磁控溅射Mo薄膜结构和性能的影响

采用磁控溅射技术在石英基体上制备了厚度为600 nm的Mo薄膜,并在不同温度下(400～ 900℃)对其进行退火处理.通过XRD、SEM、四探针测试仪对Mo薄膜的结构和性能进行了分析.结果表明,随着退火温度的升高,(110)晶面择优取向特性增强.Mo薄膜在退火温度为800℃时电阻率达到最小值3.56×10-5 Ω·cm,在900℃退火时薄膜出现宽度约为50 nm的微裂纹且薄膜电阻率较大.     

Effect of annealing treatment onoptical and electrical properties of ZnO films

The ZnO-Al films were prepared by R. F. magnetron sputtering system using a Zn-Al target (with purity of 99.99 %). The obtained films were characterized by X-ray diffraction, SEM and optical and electrical measurements. The experimental results show that the properties of ZnO films can be further improved by annealing treatment. The crystallinity of ZnO films becomes better, and the optical gap energy is decreased, but thermoelectric power is enhanced after heat treatment. The optical gap energy decreases from 3.75 eV to 3.68 eV when the annealing temperature increases from 25℃ to 400℃. This can be ascribed to the decrease of carrier concentration, resulting in Burstein shift.     

Concentration-dependent behavior of hydrogen in Al-doped ZnO thin films

The Al-doped ZnO thin films were synthesized by aerosol-assisted chemical vapor deposition. The concentration-dependent behavior of hydrogen in the films was discussed, finding that as hydrogen is introduced at a relatively low level, it tends to take the oxygen vacancy site and form a hydrogen-oxygen vacancy complex which behaves as a shallow donor, on the other hand it reduces the solubility of the substitutional Al; then higher hydrogen concentration results in the formation of H₂ neutral molecular complex.     

退火条件对H13钢球化组织与力学性能的影响

采用扫描电镜观察H13钢不同退火条件退火过程中残留碳化物及退火组织中碳化物形态与分布特征,利用图像处理软件定量分析了碳化物数量、体积分数及大小,并研究了不同退火条件对其相应的回火态力学性能的影响。结果表明,H13钢缓慢冷却退火,选择Ac1~Ac3温度区间短时保温,可获得均匀分布的细小球状残留碳化物,在退火时即使冷却速度较快也可获得球状碳化物均匀分布的退火组织,并保持较好的力学性能。     

退火处理对ITO和ITO:Zr薄膜性能的影响

利用磁控溅射在室温条件下沉积ITO薄膜和ITO：Zr薄膜,对比研究在空气中退火处理对ITO和ITO：Zr薄膜性能的影响。结果表明,Zr的掺杂促进了（400）晶面的取向,随着退火温度的升高,薄膜表面颗粒增大,表面粗糙度有所降低。室温下Zr的掺杂显著改善了薄膜的光电性能,随着退火温度的升高,ITO和ITO：Zr薄膜的方阻都表现为先降后升的趋势,ITO：Zr薄膜在较低的退火温度下可见光透过率就可达到80%以上,直接跃迁模型确定的光学禁带宽度Eg呈现了先升后降的变化。ITO：Zr薄膜比ITO薄膜显示了更高的效益指数,揭示了ITO：Zr薄膜具有更好的光电性能。     

Fabrication and magnetic properties of NiFe-ZnO nano-granular films

Excellent soft magnetic and high frequency properties were obtained successfully in the (Ni75Fe25 )x(ZnO)1-x granular films fabricated on the glass substrate by RF magnetron oblique sputtering. The microstructure, mag- netic and high frequency properties were investigated systematically. High resolution transmission electron micrographs show that the film consists of fcc Ni75Fe25 particles uniformly embedded in an amorphous insulating matrix ZnO with particle size a few nanometers. The (Ni75Fe25 ) x(ZnO)1-x films exhibit excellent soft magnetic properties in a wide x range from 0.50 to 0.80 with coercivity not exceeding 5×10-4T, which is ascribed to the exchange coupling between magnetic particles. Especially for the sample with x = 0.64, coercivities in hard and easy axes are 5.0×10-5 and 3.6×10-4 T, respectively, and the electric resistivity ρ reaches 1,790 μΩ·cm. The dependence of complex permeability u = u’ - ju" on frequency f shows that the real part u’ is more than 130 below 500 MHz, and the ferromagnetic resonance frequency fr reaches 1.32 GHz, implying the promising for high frequency application.     

Effect of substrate rotation speed on structure and properties of Al-doped ZnO thin films prepared by rf-sputtering

Al-doped ZnO (AZO) thin films were deposited on glass substrates by rf-sputtering at room temperature. The effects of substrate rotation speed (ω_S) on the morphological, structural, optical and electrical properties were investigated. SEM transversal images show that the substrate rotation produces dense columnar structures which were found to be better defined under substrate rotation. AFM images show that the surface particles of the samples formed under substrate rotation are smaller and denser than those of a stationary one, leading to smaller grain sizes. XRD results show that all films have hexagonal wurtzite structure and preferred c-axis orientation with a tensile stress along the c-axis. The average optical transmittance was above 90% in UV-Vis region. The lowest resistivity value (8.5×10^?3 Ω·cm) was achieved at ω_S=0 r/min, with a carrier concentration of 1.8×10²⁰ cm^?3, and a Hall mobility of 4.19 cm²/(V·s). For all other samples, the substrate rotation induced changes in the carrier concentration and Hall mobility which resulted in the increasing of electrical resistivity. These results indicate that the morphology, structure, optical and electrical properties of the AZO thin films are strongly affected by the substrate rotation speed.