电子封装模具设计研究现状及进展

介绍了塑料封装模具在集成电路、半导体、芯片等电子产品中的应用,重点讨论了塑料封装模具的分类、组成和设计要点,比较了注塑模具和塑料封装模具的区别,展望了塑料封装模具的发展方向。     

半导体薄型真空模具塑封用合成橡胶清模制品的设计与开发

一、半导体薄型芯片卡塑封模具清模技术背景 基于薄型BGA封装的智能卡芯片塑料封装是半导体IC封装领域的重要分支,同时也是封装技术最具挑战的行业前沿领域。智能卡封装可应用于闪存卡、移动通讯SIM卡、接触式银行卡、接触或非接触式ID卡等众多薄型芯片封装用途。随着移动通讯、智能存储、安全验证等应用需求的增长,卡类半导体芯片的封装量逐年以几何数量增长。薄型阵列BGA芯片卡封装见图1。     

开口腔体塑料封装

<正>一种用于制造开口腔体集成电路封装的方法,方法包括:将引线结合集成电路放置于模具中;通过在销与模具之间施加力迫使销接触引线结合集成电路的裸片;将塑料注射到模具中;允许塑料在集成电路周围凝固以形成具有由销界定的开口腔体的封装;及从     

关于塑料土工格栅冲孔模具的相关研究

冲孔模具在塑料土工格栅产品生产中占据着十分重要的地位,并且冲孔模具参数也会直接影响到生产产品的拉伸强度、单位面积质量等,加强塑料土工格栅冲孔模具研究就非常有必要。本文联系塑料土工格栅的基本概述,对塑料土工格栅生产工艺、冲孔装置、模具参数等进行细致的分析,并围绕冲孔模具工作失效问题,尝试从优化模具参数、合理模具结构、选用合适钢材、加强模具维护等方面入手,提出几点有效应对策略,以供参考。     

激光塑料焊接工艺

作为一种先进的塑料焊接工艺，激光塑料焊接具有速度快。焊接工艺及质量高、原材料适用范围广、易于实现焊机自动化和精密数控等综合优点，广泛应用于医疗器械、包装、汽车零部件、电子器件产品和半导体设备的封装、纺织品等领域，随着技术的不断成熟和完善，激光塑料焊接工艺的发展前景越来越广阔。[编者按]     

功率器件封装失效分析及其研究进展

针对目前塑封功率器件中封装失效研究的现状,概述了封装失效问题愈发严重的原因及其危害,分别从试验研究和建模仿真研究2个方面指出环境因素对环氧树脂等有机封装材料的特性和封装器件的可靠性影响显著,阐述了塑封功率器件中封装失效与环境因素之间的作用关系,并分析了封装失效过程及失效机理。基于上述分析,总结各种研究方法存在的优势与弊端以及目前研究工作中存在的疏漏。最后,对封装失效的后续深入研究工作提出了展望与期许。     

对KK ST-200塑料封装压机的改进

KK ST-200型塑料封装压机常被用于电子元器件后道工序的注塑封装。由于具有占地面积小、耗电量低、合模速并变化圆滑性好等优点而受到用户的欢迎。但是，由于过分追求低功耗、小体积而使该设备也存在一些困扰用户的问题，通过对该设备进行必要的改进，使其更适合于国内半导体生产企业的生产需求。[编者按]     

环氧树脂在封装材料中的应用概况

本文论述了环氧树脂在半导体封装材料中的应用和发展动态，其中包括：应用现状、半导体封装材料对环氧树脂的要求、工业化的环氧树脂和它的技术发展动向。     

塑料管材挤出模具可重构设计

为大幅度地降低模具生产成本,提高模具利用率及生产效率,提出了塑料管材挤出模具的可重构设计思想,通过对塑料管材挤出模进行特性、参数分析,得到模具重构的最佳范围,为塑料管材模具的设计、制造提供了新的设计理念.     

半导体器件封装材料用炭黑

本发明与用作半导体器件封装材料着色剂的炭黑有关。具体来说，本发明的半导体器件封装材料能降低所封装半导体的金属导线之间的泄漏电流。     

Influence of the Location of a Hypothetical Vacuum Pore on the Quantum Confinement of Excitons in CuCl Nanocrystals Formed in Borosilicate Glasses

Semiconductor systems with characteristic sizes of the order of nanometers have been extensively studied in the physics of condensed matter. Semiconductor nanocrystals embedded into vitreous matrices are promising nanoobjects in optical materials science. The possibility of forming CuCl nanocrystals with vacuum pores at the center is discussed.     

Investigation of Recessed Junctionless Double Gate MOSFET for Radio Frequency Applications

Silicon - Junctionless Metal Oxide Semiconductor Field-Effect Transistor (JL MOSFET) is one of the promising candidate to replace the junction based MOSFET for upcoming technology nodes....     

通用USB接口的数据采集系统的设计

用Cygnal公司的C8051f020作为微控制器,National Semiconductor公司的USBN9604作为USB控制芯片,设计出一个数据采集系统。     

A Simulation Study of Junctionless Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with Symmetrical Side Gates

This study simulated the structure of a Junctionless (JL) Double-Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with symmetrical Side     

Influence of Symmetric Underlap on Analog,RF and Power Applications for DG AlGaN/GaN MOS-HEMT

Silicon - An Underlap Double Gate (U-DG) Symmetric Heterojunction AlGaN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) with varying source and drain underlap lengths...     

Achieving a High Figure of Merit in LDMOSFETs with Double P-window in Silicon Dioxide

Silicon - In this paper, to achieve a high figure of merit (FOM), a new Lateral Double Diffused Metal Oxide Semiconductor (LDMOS) device is presented. This new proposed LDMOS consists of the double...     

Mykrolis buys Aeronex to expand in gas purification

Semiconductor component supplier Mykrolis Corp has acquired the assets of privately held Aeronex, a maker of gas purification products. The terms of the transaction were not disclosed.     

Novel Hybrid Silicon SETMOS Design for Power Efficient Room Temperature Operation

Silicon - A novel hybrid silicon Single Electron Transistor Metal Oxide Semiconductor (SETMOS) logic is evaluated for its functionality and usability. Emphasis is given on obtaining functionality...     

Study of Effective Graded Oxide Capacitance and Length Variation on Analog,RF and Power Performances of Dual Gate Underlap MOS-HEMT

Silicon - Comparative analysis of a Symmetric Heterojunction Underlap Double Gate (U-DG) GaN/AlGaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) on varying the effective...     

Noise Characterization of InAs Based Composite Channel DG -MOSHEMT with Different Gate Dielectrics

Silicon - This work determines the noise characterization of Indium Arsenide (InAs) based Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMTs) with different gate dielectrics for...