Efficient red phosphorescent organic light emitting diodes based on solution processed all-inorganic cesium lead halide perovskite as hole transporting layer

An efficient red phosphorescent organic light emitting diode (PhOLED) has been realized by utilizing a composite hole transporting layer comprised of all-inorganic cesium lead halide perovskite CsPbBr₃ via spin-coating and 1,3-bis(9-carbazolyl) benzene (mCP) by vacuum depositing, in which CsPbBr₃ film is used as a hole transporting layer and mCP plays a dominant role in electron and exciton blocking. And this PhOLED shows a saturated red emission coordinated at CIE (0.65, 0.33) driven at 7.5 V, a maximum brightness of 20,750 cd/m², and a maximum current efficiency of 10.64 cd/A, which is as 1.87 times as that 5.68 cd/A of the reference PhOLEDs based on traditional small organic molecular hole transporting material N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)-benzi (NPB). The electroluminescent (EL) spectra and the energy level alignment of different PhOLEDs are investigated. The enhanced EL performances are ascribed to improved hole injecting and transporting behaviors, and better electron and exciton confinements by introducing the composite hole transporting layer CsPbBr₃/mCP.     

Surface Defect Suppression for High Color Purity Light-Emitting Diode of Free-Standing Single-Crystal Perovskite Film

High color purity is one of the important features for single-crystal metal halide perovskite light-emitting diode (LED). Despite single-crystal perovskite showing low bulk defect concentration, single-crystal perovskite LEDs do not exhibit high color purity advantage due to the absence of effective surface defect passivation. Herein, one fully wrapped structure is proposed to passivate the surface of the free-standing CsPbBr₃ single-crystal films. The surface of CsPbBr₃ single-crystal films is wrapped by ultra-thin polymethyl methacrylate, precisely controlling the thickness. The single-crystal perovskite film device can achieve high color purity with a full width at half maximum (FWHM) of 15.8 nm) and a large luminescent area of 2.25 mm². It is observed that surface passivation is due to interaction of CO bond in polymer chains with the Lewis acid PbBr₂. The passivated perovskite single-crystal films significantly improve carrier lifetime and suppress surface defects. It is noteworthy that the passivated free-standing single-crystal perovskite films are feasible to build up a vertical LED device structure, avoiding the edge glowing and short-circuiting of the LED device. This study demonstrates the large luminescent area of the high-quality millimetre-scale free-standing single-crystal films for wide color gamut display and vertical optoelectronic devices.     

Enhanced Optical Properties and Stability of CsPbBr3 Nanocrystals Through Nickel Doping

To improve the quantum efficiency and stability of perovskite quantum dots, the structural and optical properties are optimized by varying the concentration of Ni doping in CsPbBr₃ perovskite nanocrystals (PNCs). As Ni doping is gradually added, a blue shift is observed at the photoluminescence (PL) spectra. Ni-doped PNCs exhibit stronger light emission, higher quantum efficiency, and longer lifetimes than undoped PNCs. The doped divalent element acts as a defect in the perovskite structure, reducing the recombination rate of electrons and holes. A stability test is used to assess the susceptibility of the perovskite to light and moisture. For ultra-violet light irradiation, the PL intensity of undoped PNCs decreases by 70%, whereas that of Ni-doped PNCs decreases by 18%. In the water addition experiment, the PL intensity of Ni-doped PNCs is three times that of undoped PNCs. For CsPbBr₃ and Ni:CsPbBr₃ PNCs, a light emitting diode is fabricated by spin-coating. The efficiency of Ni:CsPbBr₃ exceeds that of CsPbBr₃ PNCs, and the results significantly differ based on the ratio. A maximum luminance of 833 cd m^–2 is obtained at optimum efficiency (0.3 cd A^–1). Therefore, Ni-doped PNCs are expected to contribute to future performance improvements in display devices.     

Improved Performance and Stability of All‐Inorganic Perovskite Light‐Emitting Diodes by Antisolvent Vapor Treatment

All‐inorganic perovskite light‐emitting diodes (LEDs) reveal efficient luminescence with high color purity, but their modest brightness and poor stability are still critical drawbacks. Here, the luminescent efficiency and the stability of perovskite LEDs (PeLEDs) are boosted by antisolvent vapor treatment of CsPbBr₃ embedded in a dielectric polymer matrix of polyethylene oxide (PEO). A unique method is developed to obtain high quality CsPbBr₃ emitting layers with low defects by controlling their grain sizes. CsPbBr₃ in PEO matrix is post‐treated with antisolvent of chloroform (CF), leading to microcrystals with a size of ≈5 µm along the in‐plane direction with active emitting composite of 90%. A device based on CF post‐treatment (CsPbBr₃‐PEO‐CF) film displays a brightness of up to 51890 cd m^?2 with an external quantum efficiency of 4.76%. CsPbBr₃‐PEO‐CF PeLED still maintains 82% of its initial efficiency after 80 h continuous operation in ambient air, which indicates relatively good device stability. This work highlights that film quality is not only key to promoting fluorescence in CsPbBr₃, but also to achieving higher performance PeLEDs.     

Efficient green electroluminescent devices based on iridium complex with wide energy gap complexes as sensitizers

In this work, electroluminescent (EL) performances of a green iridium complex (tfmppy)₂Ir(tpip) were significantly improved by utilizing wide energy gap iridium complexes FK306 and FIrpic as sensitizers. Due to the low-lying energy levels, the co-doped FK306 or FIrpic molecules function as electron trappers, which are helpful in balancing holes and electrons on (tfmppy)₂Ir(tpip) molecules and in broadening exciton recombination zone. Consequently, the co-doped devices displayed high EL efficiencies and slow efficiency roll-off. Compared with FIrpic, FK306 acts as a more effective sensitizer because of its relatively lower energy levels. Consequently, highly efficient green EL device with maximum current efficiency, power efficiency and brightness up to 102.29 cd/A (external quantum efficiency (EQE) of 25.3%), 88.67 lm/W and 96,268 cd/m², respectively, was realized by optimizing the co-doping concentration of FK306. Even at the practical brightness of 1000 cd/m², EL current efficiency up to 92.93 cd/A (EQE = 23%) can still be retained.     

High‐Throughput Combinatorial Optimizations of Perovskite Light‐Emitting Diodes Based on All‐Vacuum Deposition

Light‐emitting diodes (LEDs) based on lead halide perovskites demonstrate outstanding optoelectronic properties and are strong competitors for display and lighting applications. While previous halide perovskite LEDs are mainly produced via solution processing, here an all‐vacuum processing method is employed to construct CsPbBr₃ LEDs because vacuum processing exhibits high reliability and easy integration with existing OLED facilities for mass production. The high‐throughput combinatorial strategies are further adopted to study perovskite composition, annealing temperature, and functional layer thickness, thus significantly speeding up the optimization process. The best rigid device shows a current efficiency (CE) of 4.8 cd A^?1 (EQE of 1.45%) at 2358 cd m^?2, and best flexible device shows a CE of 4.16 cd A^?1 (EQE of 1.37%) at 2012 cd m^?2 with good bending tolerance. Moreover, by choosing NiO_x as the hole‐injection layer, the CE is improved to 10.15 cd A^?1 and EQE is improved to a record of 3.26% for perovskite LEDs produced by vacuum deposition. The time efficient combinatorial approaches can also be applied to optimize other perovskite LEDs.     

Enhanced performance of inverted CsPbBr3 nanocrystal LEDs via Zn(II) doping

Perovskite lighting-emitting diodes (PeLEDs) with inverted structure have been considered as promising display technology due to their suitable driving schemes with n-type thin-film transistors. However, the defects and imbalanced charge carriers in the CsPbBr₃ nanocrystal (NC) PeLED are key hurdles, limiting the performance. Herein, we have successfully doped Zn²⁺ ions into CsPbBr₃ NCs by ligand-assisted reprecipitation method, exhibiting an 85% enhancement of the photoluminescence quantum yield (PLQY). In addition, the optimized energy level alignment via Zn doping facilitates the carrier balance in the devices, improving the efficiencies. The obtained CsPbBr₃:Zn-based PeLED reaches a high luminance of 3124 cd/m² and a maximum external quantum efficiency (EQE) of 0.85%, which are superior to those of CsPbBr₃-based PeLED (luminance = 564 cd/m², EQE = 0.09%). The results demonstrate that Zn doping significantly enhances the performance of PeLED, which increases the potential of these inverted PeLEDs connected with n-type TFTs towards practical applications.     

Hybridization of CsPbBr1.5I1.5 perovskite quantum dots with 9,9-dihexylfluorene co-oligomer for white electroluminescence

Quaternary lead halide CsPbBr_1.5I_1.5 perovskite quantum dots (PQDs) with cubic shapes and emission wavelength at 566 nm were synthesized by hot injection and carefully characterized to better compensate with blue co-oligomer for white light emission. With a very simple device structure, the electroluminescent hybrid device exhibits a turn-on voltage of 4.7 V, a maximum luminance ∼1200 cd/m², and steady CIE coordinates of (0.28, 0.33). Compared to the photoluminescence spectrum, the increased electroluminescence from PQDs in the HFSO/PQD composite film of the device strongly suggests that the emission from CsPbBr_1.5I_1.5 PQDs are partially due to the direct charge injection.     

Highly efficient quasi-two dimensional perovskite light-emitting diodes by phase tuning

Tetraphenylphosphonium chloride (TPPCl) is used as an additive in the antisolvent for preparing the quasi-two Dimensional (quasi-2D) perovskite film. This strategy is not only beneficial for the morphology formation but also the phase tuning of the quasi-2D perovskite film. Highly efficient and stable perovskite light-emitting diodes (PeLEDs) were achieved with the maximum luminance of 35,000 cd/m², the maximum current efficiency of 48.0 cd/A and the maximum external quantum efficiency (EQE) of 12.42%. Due to the reduced exciton quenching rate, improved charge carrier injection and transport ability, the electroluminescent performance of the TPPCl-based PeLEDs has been enhanced.     

Core/Shell Perovskite Nanocrystals: Synthesis of Highly Efficient and Environmentally Stable FAPbBr3/CsPbBr3 for LED Applications

Lead halide perovskite nanocrystals (PeNCs) are promising materials for applications in optoelectronics. However, their environmental instability remains to be addressed to enable their advancement into industry. Here the development of a novel synthesis method is reported for monodispersed PeNCs coated with all inorganic shell of cesium lead bromide (CsPbBr₃) grown epitaxially on the surface of formamidinium lead bromide (FAPbBr₃) NCs. The formed FAPbBr₃/CsPbBr₃ NCs have photoluminescence in the visible range 460–560 nm with narrow emission linewidth (20 nm) and high optical quantum yield, photoluminescence quantum yield (PLQY) up to 93%. The core/shell perovskites have enhanced optical stability under ambient conditions (70 d) and under ultraviolet radiation (50 h). The enhanced properties are attributed to overgrowth of FAPbBr₃ with all‐inorganic CsPbBr₃ shell, which acts as a protective layer and enables effective passivation of the surface defects. The use of these green‐emitting core/shell FAPbBr₃/CsPbBr₃ NCs is demonstrated in light‐emitting diodes (LEDs) and significant enhancement of their performance is achieved compared to core only FAPbBr₃‐LEDs. The maximum current efficiency observed in core/shell NC LED is 19.75 cd A^‐1 and the external quantum efficiency of 8.1%, which are approximately four times and approximately eight times higher, respectively, compared to core‐only devices.     

Piezoelectric Nanogenerator Based on In Situ Growth All-Inorganic CsPbBr3 Perovskite Nanocrystals in PVDF Fibers with Long-Term Stability

Inorganic lead halide perovskite has become an emerging material for modern photoelectric and electronic nanodevices due to its excellent optical and electronic properties. In view of its huge dielectric and electrical properties, inorganic CsPbBr₃ perovskite is introduced into the piezoelectric nanogenerator (PENG). Based on one-step electrospinning of solutions containing CsPbBr₃ precursors and polyvinylidene difluoride (PVDF), in situ growth of CsPbBr₃ nanocrystals in PVDF fibers (CsPbBr₃@PVDF composite fibers) with highly uniform size and spatial distribution are synthesized. The CsPbBr₃@PVDF composite fibers based PENG reveals an open-circuit voltage (V_oc) of 103 V and a density of short-circuit current (I_sc) of 170  µ A cm⁻², where the V_oc is comparable to the state-of-the-art hybrid composite piezoelectric nanogenerators (PENGs) and the density of I_sc is 4.86 times higher than that of lead halide perovskites counterpart ever reported. Moreover, CsPbBr₃@PVDF composite fibers based PENG exhibits fundamentally improved thermal/water/acid–base stabilities. This study suggests that the CsPbBr₃@PVDF composite fiber is a good candidate for fabricating high-performance PENGs, promising application potentials in mechanical energy harvesting and motion sensing technologies.     

One-Step Polymeric Melt Encapsulation Method to Prepare CsPbBr3 Perovskite Quantum Dots/Polymethyl Methacrylate Composite with High Performance

All-inorganic CsPbBr₃ perovskite quantum dots (PQDs) exhibit excellent photoelectric properties and application prospects in the field of light-emitting diodes (LEDs) and display devices. However, these possess poor long-term stability to UV irradiation, water, heat, and oxygen. Using polymethyl methacrylate (PMMA) as the matrix along with CH₃(CH₂)₁₆COOCs, [CH₃(CH₂)₁₆COO]₂Pb, and KBr as the perovskite sources, CsPbBr₃ PQDs/PMMA composites are for the first time prepared via an in situ polymeric melt encapsulation method. Special attention is paid to the effects of synthesis conditions on the photoluminescent quantum yield (PLQY) of the composites. The optimized CsPbBr₃ PQDs/PMMA composite reveals excellent performance with ≈82.7% PLQY and ≈18.6 nm full width at a half-maximum (FWHM). In particular, after 90 h of UV irradiation or 35 days of heating at 60 °C, the luminous intensity remains almost unchanged. In addition, after soaking in water for 15 days, it retains up to ≈53% of the initial luminous intensity, meaning that the composite possesses long-term stability to UV irradiation, heat, and water. The as-prepared white LED (WLED) based on the composite evidences the wide color gamut (126.5% National Television System Committee (NTSC)) and a luminous efficiency of 32 lm W⁻¹. This work offers a novel, easily industrialized one-step, and solvent free route for low-temperature synthesis of all-inorganic PQDs with broad application prospects.     

Epitaxial Growth of Large‐Scale Orthorhombic CsPbBr3 Perovskite Thin Films with Anisotropic Photoresponse Property

Inorganic cesium lead halide perovskite (CsPbX₃, X = Cl, Br, I) is a promising material for developing novel electronic and optoelectronic devices. Despite the substantial progress that has been made in the development of large perovskite single crystals, the fabrication of high‐quality 2D perovskite single‐crystal films, especially perovskite with a low symmetry, still remains a challenge. Herein, large‐scale orthorhombic CsPbBr₃ single‐crystal thin films on zinc‐blende ZnSe crystals are synthesized via vapor‐phase epitaxy. Structural characterizations reveal a “CsPbBr₃(110)//ZnSe(100), CsPbBr₃[?110]//ZnSe[001] and CsPbBr₃[001]//ZnSe[010]” heteroepitaxial relationship between the covering CsPbBr₃ layer and the ZnSe growth substrate. It is exciting that the epitaxial film presents an in‐plane anisotropic absorption property from 350 to 535 nm and polarization‐dependent photoluminescence. Photodetectors based on the epitaxial film exhibit a high photoresponsivity of 200 A W^?1, a large on/off current ratio exceeding 10⁴, a fast photoresponse time of about 20 ms, and good repeatability at room temperature. Importantly, a strong polarization‐dependent photoresponse is also found on the device fabricated using the epitaxial CsPbBr₃ film, making the orthorhombic perovskite promising building blocks for optoelectronic devices featured with anisotropy.     

All‐Inorganic Perovskite Nanocrystals for High‐Efficiency Light Emitting Diodes: Dual‐Phase CsPbBr3‐CsPb2Br5 Composites

A dual‐phase all‐inorganic composite CsPbBr₃‐CsPb₂Br₅ is developed and applied as the emitting layer in LEDs, which exhibited a maximum luminance of 3853 cd m^–2, with current density (CE) of ≈8.98 cd A^–1 and external quantum efficiency (EQE) of ≈2.21%, respectively. The parasite of secondary phase CsPb₂Br₅ nanoparticles on the cubic CsPbBr₃ nanocrystals could enhance the current efficiency by reducing diffusion length of excitons on one side, and decrease the trap density in the band gap on the other side. In addition, the introduction of CsPb₂Br₅ nanoparticles could increase the ionic conductivity by reducing the barrier against the electronic and ionic transport, and improve emission lifetime by decreasing nonradiative energy transfer to the trap states via controlling the trap density. The dual‐phase all‐inorganic CsPbBr₃‐CsPb₂Br₅ composite nanocrystals present a new route of perovskite material for advanced light emission applications.     

New hole blocking material for green-emitting phosphorescent organic electroluminescent devices

The new amorphous molecular material, 2,5-bis(4-triphenylsilanyl-phenyl)-[1,3,4]oxadiazole, that functions as good hole blocker as well as electron transporting layer in the phosphorescent devices. The obtained material forms homogeneous and stable amorphous film. The new synthesized showed the reversible cathodic reduction for hole blocking material and the low reduction potential for electron transporting material in organic electroluminescent (EL) devices. The fabricated devices exhibited high performance with high current efficiency and power efficiency of 45 cd/A and 17.7 lm/W in 10 mA/cm², which is superior to the result of the device using BAlq (current efficiency: 31.5 cd/A and power efficiency: 13.5 lm/W in 10 mA/cm²) as well-known hole blocker. The ITO/DNTPD/α-NPD/6% Ir(ppy)₃ doped CBP/2,5-bis(4-triphenylsilanyl-phenyl)-[1,3,4]oxadiazole as both hole blocking and electron transporting layer/Al device showed efficiency of 45 cd/A and maximum brightness of 3000 cd/m² in 10 mA/cm².     

Optoelectronic characteristics of MEH-PPV polymer LEDs with thin,doped composition-graded a-SiC:H carrier injection layers

The optoelectronic characteristics of poly(2-methoxy-5-(2′ethyl-hexoxy)-1,4-phenylene-vinylene) (MEH-PPV) polymer LEDs (PLEDs) have been improved by employing thin doped composition-graded (CG) hydrogenated amorphous silicon–carbide (a-SiC:H) films as carrier injection layers and O₂-plasma treatment on indium–tin-oxide (ITO) transparent electrode, as compared with previously reported ones having doped constant-optical-gap a-SiC:H carrier injection layers. For PLEDs with an n-type a-SiC:H electron injection layer (EIL) only, the electroluminescence (EL) threshold voltage and brightness were improved from 7.3 V, 3162 cd/m² to 6.3 V, 5829 cd/m² (at a current density J = 0.6 A/cm²), respectively, by using the CG technique. The enhancement of EL performance of the CG technique was due to the increased electron injection efficiency resulting from a smoother barrier and reduced recombination of charge carriers at the EIL and MEH-PPV interface. Also, surface modification of the ITO transparent electrode by O₂-plasma treatment was used to further improve the EL threshold voltage and brightness of this PLED to 5.1 V, 6250 cd/m² (at J = 0.6 A/cm²). Furthermore, by employing the CG n[p]-a-SiC:H film as EIL [hole injection layer (HIL)] and O₂-plasma treatment on the ITO electrode, the brightness of PLEDs could be enhanced to 9350 cd/m² (at a J = 0.3 A/cm²), as compared with the 6450 cd/m² obtained from a previously reported PLED with a constant-optical-gap n-a-SiCGe:H EIL and p-a-Si:H HIL.     

High Optical Gain of Solution-Processed Mixed-Cation CsPbBr3 Thin Films towards Enhanced Amplified Spontaneous Emission

A solution-processed thin film made of all-inorganic CsPbBr₃ perovskite is a promising candidate for low-cost and flexible green-color lasers. However, the amplified spontaneous emission (ASE) of solution-processed CsPbBr₃ films still experiences a high threshold owing to poor morphology and insufficient optical gain. Here, a multiple-cation doping strategy is demonstrated to develop compact, smooth thin films of Cs_0.87(FAMA)_0.13PbBr₃/(NMA)₂PbBr₄ (FA: formamidinium; MA: methylammonium; NMA: naphthylmethylammonium) with a record high net modal optical gain of ≈ 3030 cm⁻¹ and low propagation loss of 1.0 cm⁻¹. The FA and MA cations improve the crystallization kinetics to form continuous films, and the NMA cations reduce the grain dimension, increase film dispersibility/uniformity, and enhance spatial confinement to promote optical gain. Room-temperature ASE is demonstrated under a low threshold of ≈ 3.8  µ J cm⁻² without degradation after four months of storage in glove box or excitation by 3 × 10⁷ laser pulses. These findings provide insights into enhancing the optical gain and lowering the threshold of perovskite lasers in terms of molecular synthesis and microstructure engineering.     

Trade-Off Between Efficiency and Stability of CsPbBr3 Perovskite Quantum Dot-Based Light-Emitting Diodes by Optimized Passivation Ligands for Br/Pb

Although significant progress has been made in improving the external quantum efficiencies (EQEs) of perovskite quantum dot (QD) light-emitting diodes (QLEDs), understanding the degradation mechanism and enhancing stability remain a challenge. Herein,  increasing the content of Br-based passivation ligands is shown to enhance the EQE up to 16.1% by reducing the defects of CsPbBr₃ QDs in a Br-rich environment. However, the operational lifetimes of perovskite QLEDs gradually decrease with the increase of halide content, owing to the intensified ion migration under continuous electric field confirmed by the current behavior of QLEDs and time-of-flight secondary-ion mass spectrometry. Furthermore, a thorough analysis of the relationship between electricity and luminance of QLEDs suggests that a small amount of residue oleic acid ligands could weaken ion migration. Accordingly, a halide- and acid-hybrid (HAH) co-passivation strategy is proposed to optimize the content of Br- and acid-based ligands, and achieve a maximum EQE of 18.6% and an operational lifetime (T₅₀, extrapolated) of 213 h for CsPbBr₃ QLEDs. This approach for passivating QDs combines the high efficiency of Br-based ligands with the improved stability of acid-based ligands. The study elucidates the correlation between ligands and device performance, highlighting the significance of two or even multiple ligands for efficient and stable perovskite QLEDs.     

Amplifying Surface Energy Difference toward Anisotropic Growth of All-Inorganic Perovskite Single-Crystal Wires for Highly Sensitive Photodetector

It is a great challenge to directly grow super long all-inorganic perovskite monocrystalline wires due to the weak surface energy difference among the low index facets. Here, a one-pot solution process to grow the aspect ratio over 10⁵ of monocrystalline CsPbBr₃ perovskite wires (PWs) and yield up to 70% is reported. A chemical potential dependent surface energy difference amplification strategy is proposed to regulate the surface energy of growing and grown surfaces accordingly to the anisotropic growth of CsPbBr₃. The anisotropic growth of wires is derived from the regulation of anti-solvent diffusion kinetic and the mass transfer kinetic control of the metal halide salts. This experiment demonstrates a 50 times amplification of surface energy difference. As-produced PWs present a high photodetection responsivity up to 4923 A W⁻¹, external quantum efficiency exceeding 13 784%, and detectivity over 3.6 × 10¹³ Jones. This work not only reveals the mechanism of surface energy dominated anisotropic growth for CsPbBr₃ PWs, but also elucidates the important role of kinetics regulation during the growth process, which may open a new window for the low-dimensional crystal growth of ionic compounds.     

Efficient Ruddlesden–Popper Perovskite Light‐Emitting Diodes with Randomly Oriented Nanocrystals

Ruddlesden–Popper phase (RP‐phase) perovskites that consist of 2D perovskite slabs interleaved with bulky organic ammonium (OA) are favorable for light‐emitting diodes (LEDs). The critical limitation of LED applications is that the insulating OA arranged in a preferred orientation limits charge transport. Therefore, the ideal solution is to achieve a randomly connected structure that can improve charge transport without hampering the confinement of the electron–hole pair. Here, a structurally modulated RP‐phase metal halide perovskite (MHP), (PEA)₂(CH₃NH₃)_m?1Pb_mBr_3m+1 is introduced to make the randomly oriented RP‐phase unit and ensure good connection between them by applying modified nanocrystal pinning, which leads to an increase in the efficiency of perovskite LEDs (PeLEDs). The randomly connected RP‐phase MHP forces contact between inorganic layers and thereby yields efficient charge transport and radiative recombination. Combined with an optimal dimensionality, (PEA)₂(CH₃NH₃)₂Pb₃Br₁₀, the structurally modulated RP‐phase MHP exhibits increased photoluminescence quantum efficiency, from 0.35% to 30.3%, and their PeLEDs show a 2,018 times higher current efficiency (20.18 cd A^?1) than in the 2D PeLED (0.01 cd A^?1) and 673 times than in the 3D PeLED (0.03 cd A^?1) using the same film formation process. This approach provides insight on how to solve the limitation of RP‐phase MHP for efficient PeLEDs.