110 GHz在片16项误差模型校准件定值方法研究

现有商用集总参数校准件电路模型使用简便,但由于校准件电路模型的不完善、电路中参数在提取过程中采用拟合算法等原因,导致其定值准确度受限。从用于高频串扰修正的16项误差模型校准件设计入手,给出了校准件高精度的定值方法--即通过研制辅助的Multiline TRL校准标准,采用测试加仿真的方式对校准件进行定值,并采用定值文件作为定值样式。采用定值过的16项误差模型校准件校准在片测试系统,并与美国NIST基于Multiline TRL的二次校准方法比较,在110GHz内,两者S21相差在0.30dB以内,相位相差1°以内。所不同的是,16项误差模型校准件的个数远低于NIST,并且在校准过程中不需要移动探针。在保证准确度的前提下,大大提高了测试效率。     

宽带在片SOLT校准件研制及表征

针对在片S参数校准,设计制作GaAs衬底SOLT校准组件,通过计算方法对校准组件中直通、开路、短路和负载校准件中偏置传输线的时延和损耗进行定义,运用基于NIST multiline TRL校准的测量方法对校准组件中开路校准件电容和短路校准件电感参数进行提取,结合直流电阻测试法测试负载阻值大小,实现对SOLT校准组件的完整表征。最后用自行研制并表征的SOLT校准组件校准在片S参数测试系统,通过测量无源器件验证校准效果,将测量结果与NIST multiline TRL校准后的测量结果比较,在20 GHz内传输幅度最大偏差0.1 dB,传输相位最大偏差3.5°。     

一种对在片测量系统中串扰误差进行修正的新型校准方法

现有高频段在片S参数校准方法有16-term误差模型校准方法和基于多线TRL的二次串扰修正算法,它们对测试系统之间的串扰误差进行了较好的表征。提出了一种新型校准方法,即把测试系统之间的串扰等效为一个与被测件并联的二端口网络。整个校准方法一共分为两步,第一步采用常规的SOLR校准方法得到基本8项误差模型,第二步通过测量一个串扰标准件(可以是SOLR中的开路校准件)完成对串扰误差的表征。仿真和测试结果表明,新型校准方法准确度可达到16-term误差模型的准确度,并对串扰误差具有相当的抑制效果。同时,新模型方法只需使用4个校准件,数量少于传统16-term误差模型方法,在保证准确度的前提下,提高了测试效率。     

PCM设备电容参数整体校准方法研究

半导体行业中普遍使用的工艺过程监控设备(PCM设备),是芯片产品中测环节必不可少的测量设备。PCM设备电容参数的准确测量，是保证与电容制作相关工艺参数的重要手段。针对国内PCM设备电容参数暂无溯源途径现状，根据其测试原理，研究了基于在片电容标准件的整体无损校准方法。采用增加绝缘层的半导体工艺，研制了高稳定性、频响至1 MHz、电容低至0.5 pF的在片电容标准件，满足了国内PCM设备电容参数自动校准需求，测量不确定度优于1%。研究了PCM设备电容参数溯源方法，从而保证了芯片产品PCM图形电容量值测量结果的准确一致，提高了计量效率。     

在片LRRM校准算法研究

研究了LRRM(传输线-反射-反射-匹配负载)校准算法,完善了负载标准测量模型,通过参考面平移将测量结果由被测件中间平移到探针端面,基于MATLAB开发平台编制了校准软件.用研究的校准方法和商用校准方法分别对同一在片散射参数测量系统进行校准,校准后的系统测量相同的短路标准和衰减器.测量结果显示,在100 MHz～110...     

无源器件在片散射参数校准比较方法研究

为解决由于不同校准方法导致无源器件在片散射参数测试结果存在偏差的问题,通过以校准准确度高的多线TRL校准方法为参考基准,比较SOLT、LRRM校准方法与其误差项的差异.充分考虑了两个端口误差项的级联关系,推导得到误差项差异的数学模型,通过参数转换计算得到无源器件在片散射参数的最大偏差.在100MHz～67GHz频段范围...     

在片Multi-TRL校准技术研究

美国NIST Multi-TRL校准技术实现在片散射参数(S参数)的精确校准测试,但国内尚未实现上述校准技术,致使在片测量准确度不能满足精密测试需求。在充分研究Multi-TRL算法并自主推导相关核心公式的基础上,开发Mutli-TRL校准软件CETC13,并对校准软件准确度进行验证。然后利用半导体工艺开展0.1~40 GHz Multi-TRL校准标准1312的设计和制作,通过衬底厚度、横截面的优化设计,该校准标准能有效抑制多模传输。CETC13校准软件与校准标准校准过的在片系统测量结果与国外相同等级的在片系统相比,在0.1~40 GHz频段内,传输幅度相差0.05~0.10 d B,相位相差0.05°~1.3°;反射幅度相差0.002~0.007,可解决国内在片S参数精确校准测试问题。     

TR组件测试系统功率参数校准技术

研究工作状态下TR组件测试系统功率参数的校准方法,介绍了在脉冲峰值功率条件下功率参数测量标准的仪器组成,分析其功率参数校准的定标方法,并给出相应实验数据。     

晶体阻抗计校准方法

文章对晶体阻抗计的校准方法进行阐述,阻抗计测试晶体的三个主要参数为:谐振频率fr、谐振电阻Rr、静电容CO,校准阻抗计的这三个测试参数都是采用传递比对法,阻抗计还可以显示晶体其他不同的参数,但都是在这三个基本参数测试的基础上测试计算而来的,这三个参数的测试结果会影响其他的参数是否准确,所以仅对fr、Rr、CO的校准方法作介绍;250B-1网络分析式阻抗计是一种使用普遍的阻抗计,对它的校准方法也适合其他类型阻抗计的校准。     

光学密度计示值校准表及其在实际工作中的应用

漫透射视觉密度计的示值通过与标准密度片的密度值比较进行校准。一般检定证书或校准证书上均附有密度示值的校准结果,即示值校准表。本文给出了几种在光学密度计实际使用过程中利用给定的密度示值校准表的方法,仪器使用人员可参考使用。     

一种在片薄膜铂电阻温度传感器的校准方法

在片薄膜铂电阻温度传感器以铂作为感温薄膜,采用半导体工艺制造,可以有效地监测晶圆片上的半导体器件温度。为了校准该类型温度传感器,根据其工作原理和结构特点,参考JJG 229-2010对校准装置的要求,提出了一种利用高低温探针台、八位半数字多用表以及直流探针组建校准装置的方法;通过组建校准装置,测量温度传感器在不同温度下的电阻值,得到电阻-温度特性的分度表;并对在片薄膜铂电阻温度传感器在25℃和125℃2个温度点进行校准。校准数据及校准结果验证表明,该方法切实可行,可有效解决无连接引线的在片铂薄膜电阻温度传感器的校准问题。该校准技术也可为其他类型感温元件的在片温度传感器校准提供参考依据。     

A calibration and measurement method of a tri-six-port networkanalyzer suitable for on-wafer characterization of three-port devices

A calibration and measurement method using a wideband tri-six-port network and analyzer (TSPNA) is proposed. The scattering parameters of a three-port device under test are found to be the unknowns of a set of nine simultaneous complex linear equations. These equations are established via a group of three calibrated linearly independent excitations. No isolators are required for calibration and measurement procedures. Three unknown reciprocal two-port standards are needed for the calibration of the TSPNA. The proposed method is rigorous, explicit, and suitable for wideband on-wafer three-port device S-parameter measurements. It can easily be adapted for heterodyne automated network analyzers equipped with three reflection test-set units     

Primary state standard of the unit of inductance — The henry

Conclusions The standard of the henry is the first (with respect to its approval) state standard in the range of inductance, capacitance, and resistance measurements.This standard served up to the beginning of the sixties as the only initial (computed) quantity, on whose basis the VNIIM determined by indirect means the absolute values of the units of capacitance and resistance. The error of these indirect methods for reproducing units was of the order of 10^–5.Investigations, including circulatory international comparisons, of working standards have shown that the precision and accuracy of reproducing inductance units in the USSR are at the level of the best results obtained in national metrological institutes.In recent years new, more precise methods for reproducing resistance units have appeared. These methods, as well as the application of new types of measuring equipment, made it possible to extend substantially the nominal values' range of inductance standards covered by the test schematic.In order to ensure uniformity in this field of measurements, it is necessary to have a set of mutually-related computed inductance and capacitance standards (Fig. 3).The State Committee of standards attached to the USSR Council of Ministers approved, in accordance with the VNIIM recommendations, the coil types PB-1, KB-1, KB-2, and KB-3 as primary state standards of the henry. Prof. Igor' Nikolaevich Krotkov,head of the VNIIM laboratory,was appointed scientific keeper of this State standard.Translated from Izmeritel'naya Tekhnika, No. 10, pp. 7–11, October, 1972.     

15-term self-calibration methods for the error-correction ofon-wafer measurements

An improved method of network analyzer calibration is described using the 15-term full model which includes all leakage errors between on-wafer probe tips. This model is well suited to eliminate measurement errors of network analyzer measurements on the wafer. All procedures presented are so-called self-calibration methods, allowing for standards that are not completely known. This allows one to create calibration standards in an easy way and to monitor the calibration process. Simple and robust closed-form equations are presented for all procedures. All procedures can be derived from the general method MURN (match, unknown, reflect, network). The MORN (match, open, reflect, network) is presented, which is particular interesting for on-wafer-measurements. Furthermore, the TMRN (through, match, reflect, network) procedure presented is especially designed for coaxial measurement problems. Experimental results of the TMRN method attest to the very good accuracy and viability of the 15-term self-calibration procedures and can be compared with other 15-term procedures     

110 GHz可溯源的On-wafer GaAs基Multi-TRL校准标准件研制

设计制作了用于1 ~110 GHz On-wafer 散射参数测试系统自校准的GaAs基Multi-TRL校准标准件。主要验证了Multi-TRL校准标准件设计的正确性;经过与国外计量标准及商用校准件比对,还验证了在频率范围1 GHz~110 GHz,用于Multi-TRL校准的校准标准件的准确性。     

Microwave impedance spectroscopy of dense carbon nanotube bundles

We have performed impedance spectroscopy of dense carbon nanotube (CNT) bundles in the broad frequency range from 10 MHz to 67 GHz. Dense CNT bundles were formed on sharp tips from aqueous suspension by ac dielectrophoresis and incorporated into on-wafer test structures. The frequency response of the bundles can be fit to a model with frequency-independent elements in the entire frequency range up to 67 GHz strongly suggesting that CNT properties do not depend on the frequency throughout the whole frequency range. The measurements at microwave frequencies allowed separate characterization of the bundle/metal electrode contacts and the bundle bulk. Effects of different CNT fabrication and suspension processing routes on bundle characteristics were identified. We have also made a preliminary estimation of the average inductance per current carrying shell in the bundles. For good quality nanotube bundles, the inductance has been found to fall within the range from approximately 3.5 to 40 nH/microm. With decreasing nanotube quality, the implemented estimation procedure yields higher values with a large uncertainty. Systematic measurements of devices with individual nanotubes are required to provide more accurate data.