Plasma density measurement and downstream etching of silicon and silicon oxide in Ar/NF3 mixture remote plasma source

In this study, plasma density measurements were performed near the plume region of the remote plasma source (RPS) in Ar/ NF₃ gas mixtures using a microwave cutoff probe. The measured plasma density is in the range of 10 ¹⁰ –10 ¹¹ cm ⁻³ in the discharge conditions with RPS powers of 2–4 kW and gas pressures of 0.87–4 Torr. The plasma density decreased with increasing gas pressures and RPS powers under various Ar/ NF₃ mixing ratios. This decrease in the plasma density measured at the fixed measurement position (plume region) can be understood by the reduction of the electron energy relaxation length with increases in the gas pressures and mixing ratio of NF₃/(Ar / NF₃). We also performed downstream etching of silicon and silicon oxide films in this system. The etch rate of the silicon films significantly increases while the silicon oxide is slightly etched with the gas pressures and powers. It was also found that the etch rate strongly depends on the wafer position on the processing chamber electrode, and that the etch selectivity reached 96–131 in the discharge conditions of RF powers (3730–4180 W) and gas pressures (3.6–4 Torr).     

Effect of Low-Frequency Power on Etching Characteristics of 6H-SiC in C_4F_8/Ar Dual-Frequency Capacitively Coupled Plasma

Dry etching of 6H silicon carbide(6H-SiC)wafers in a C_4Fs/Ar dual-frequency capacitively coupled plasma(DF-CCP)was investigated.Atomic force microscopy(AFM)and X-ray photoelectron spectroscopy(XPS)were used to measure the SiC surface structure and compositions,respectively.Optical emission spectroscopy(OES)was used to measure the relative concentration of F radicals in the plasma.It was found that the roughness of the etched SiC surface and the etching rate are directly related to the power of low-frequency(LF)source.At lower LF power,a smaller surface roughness and a lower etching rate are obtained due to weak bombardment of low energy ions on the SiC wafers.At higher LF power the etching rate can be efficiently increased,but the surface roughness increases too.Compared with other plasma dry etching methods,the DF-CCP can effectively inhibit C_xF_y films'deposition,and reduce surface residues.     

Relation between etching profile and voltage–current shape of sintered SiC etching by atmospheric pressure plasma

Sintered silicon carbide (SiC) was etched by a dielectric barrier discharge source. A high voltage bipolar pulse was used with helium gas for the plasma generation. One stable filament plasma was generated and could be used for SiC etching. As the processing gas (NF₃) mixing rate increased, the width and depth of the etching profile became narrower and deeper. The differentiated V–Q Lissajous method was used for measuring the capacitances (C_eq) of the electrode after the plasma turned on. The width of the etching profile was proportional to C_eq. As the current peak value I_smx of the substrate current increased, the volume removal rate of SiC increased. The etch depth was proportional to the ratio of I_smx to C_eq. Additionally, because of the different characteristics of the plasma disks on SiC substrate by the voltage polarity, the etching profile was unstable. However, in high NF₃ mixing process, the etching profile became stable and deeper.     

Plasma-assisted surface modification and radical diagnostics

Plasma-assisted deposition and etching have widely been applied to microelectronics devices in industries as well as to huge vacuum devices in nuclear fusion. A more detailed understanding of plasma processing is essential for development of new techniques for small-scale ( ) etching and large-scale ( >10 m) deposition. A scaling law for uniformity of large-scale deposition was found in a simulation experiment of boron coating of fusion devices, using a less hazardous boride B₁₀H₁₄ (decaborane). Moreover, boron etching by a fluorocarbon plasma was demonstrated along with a new modeling of surface-coverage effects. Appearance mass spectrometry which is a powerful tool for neutral radical detection, has successfully been applied to a CF₄ containing RF plasma for semiconductor etching. Addition of a small amount of H₂ into CF₄ drastically modified the kinetics of CF₂ and CF₃ radicals as a result of surface processes.     

Etching characteristics of thin SiON films using a liquefied perfluorocarbon precursor of C6F12O with a low global warming potential

Perfluorocarbon gas is widely used in the semiconductor industry. However, perfluorocarbon has a negative effect on the global environment owing to its high global warming potential (GWP) value. An alternative solution is essential. Therefore, we evaluated the possibility of replacing conventional perfluorocarbon etching gases such as CHF₃ with C₆F₁₂O, which has a low GWP and is in a liquid state at room temperature. In this study, silicon oxynitride (SiON) films were plasma-etched using inductively coupled CF₄ +C₆F₁₂O+O₂ mixed plasmas. Subsequently, the etching characteristics of the film, such as etching rate, etching profile, selectivity over Si, and photoresist, were investigated. A double Langmuir probe was used and optical emission spectroscopy was performed for plasma diagnostics. In addition, a contact angle goniometer and x-ray photoelectron spectroscope were used to confirm the change in the surface properties of the etched SiON film surface. Consequently, the etching characteristics of the C₆F₁₂O mixed plasma exhibited a lower etching rate, higher SiON/Si selectivity, lower plasma damage, and more vertical etched profiles than the conventional CHF₃ mixed plasma. In addition, the C₆F₁₂O gas can be recovered in the liquid state, thereby decreasing global warming. These results confirmed that the C₆F₁₂O precursor can sufficiently replace the conventional etching gas.     

Numerical analysis of thermal plasma scrubber for CF4 decomposition

CF₄ gas emitted in the semiconductor and display manufacturing process is a very harmful greenhouse gas. It must be removed or converted safely due to its extreme toxicity. Although a CF₄ decomposition system using a thermal plasma scrubber was commercialized, its removal efficiency is limited. In this work, a numerical analysis of CF₄ decomposition in the thermal plasma scrubber was carried out in order to propose an efficient decomposition environment. The decomposition and recombination temperatures of CF₄ were analyzed using thermodynamic equilibrium calculations. The chemical reaction of CF₄ decomposition into carbon and fluorine gas was considered in this numerical analysis. The injection position and angle of the CF₄ were controlled in order to enhance the decomposition rate. The vertical injection of CF₄ near the torch exit improved the mixing of the CF₄ with the thermal plasma flame. In addition, it was confirmed that the high temperature region expanded due to a vortex generated by strong turbulence in the bottleneck-shaped reactor. As a result, it is revealed that the CF₄ injection location and the reactor configuration are the most important factors in improving the decomposition rate.     

Reactive ion etching of PECVD silicon nitride in SF6 plasma

The reactive ion etching of PECVD silicon nitride thin films has been investigated using SF₆ plasma. Effects of variations of process parameters such as pressure (50–350 mTorr), RF power (50–250 W), gas flow rate (3–130 sccm) and additions of O₂ and He (0–50%) in SF₆, on the PECVD silicon nitride etch rate and selectivity to the AZ 1350J photoresist were examined. An etch rate of 1 μm/min has been obtained under the condition of 150 mTorr, 100 W and 60 sccm. Experimental results also indicated a maximum etch rate at approximately 30% O₂ while addition of He showed only dilution effect. A nitride/photoresist selectivity ranging from 1 to 3:1 has been obtained.     

Development of a helicon-wave excited plasma facility with high magnetic field for plasma-wall interactions studies

The high magnetic field helicon experiment system is a helicon wave plasma(HWP)source device in a high axial magnetic field(B_0)developed for plasma–wall interactions studies for fusion reactors.This HWP was realized at low pressure(5?×?10~(-3)?-?10 Pa)and a RF(radio frequency,13.56 MHz)power(maximum power of 2 k W)using an internal right helical antenna(5 cm in diameter by 18 cm long)with a maximum B_0of 6300 G.Ar HWP with electron density~10~(18)–10~(20)m~(-3)and electron temperature~4–7 e V was produced at high B_0 of 5100 G,with an RF power of 1500 W.Maximum Ar~+ion flux of 7.8?×?10~(23)m~(-2)s~(-1)with a bright blue core plasma was obtained at a high B_0 of 2700 G and an RF power of 1500 W without bias.Plasma energy and mass spectrometer studies indicate that Ar~+ion-beams of 40.1 eV are formed,which are supersonic(~3.1c_s).The effect of Ar HWP discharge cleaning on the wall conditioning are investigated by using the mass spectrometry.And the consequent plasma parameters will result in favorable wall conditioning with a removal rate of 1.1?×?10~(24)N_2/m~2 h.     

Deposition of SiC_xH_yO_z thin film on epoxy resin by nanosecond pulsed APPJ for improving the surface insulating performance

Non-thermal plasma surface modification for epoxy resin(EP)to improve the insulation properties has wide application prospects in gas insulated switchgear and gas insulatedtransmission line.In this paper,a pulsed Ar dual dielectrics atmospheric-pressure plasma jet(APPJ)was used for Si C_xH_yO_zthin film deposition on EP samples.The film deposition was optimized by varying the treatment time while other parameters were kept at constants(treatment distance:10 mm,precursor flow rate:0.6 l min~(-1),maximum instantaneous power:3.08 k W and single pulse energy:0.18 m J).It was found that the maximum value of flashover voltages for negative and positive voltage were improved by 18%and 13%when the deposition time was3 min,respectively.The flashover voltage reduced as treatment time increased.Moreover,all the surface conductivity,surface charge dissipation rate and surface trap level distribution reached an optimal value when thin film deposition time was 3 min.Other measurements,such as atomic force microscopy and scanning electron microscope for EP surface morphology,Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy for EP surface compositions,optical emission spectra for APPJ deposition process were carried out to better understand the deposition processes and mechanisms.The results indicated that the original organic groups(C–H,C–C,C=O,C=C)were gradually replaced by the Si containing inorganic groups(Si–O–Si and Si–OH).The reduction of C=O in ester group and C=C in p-substituted benzene of the EP samples might be responsible for shallowing the trap level and then enhancing the flashover voltage.However,when the plasma treatment time was longer than 3 min,the significant increase of the surface roughness might increase the trap level depth and then deteriorate the flashover performance.     

Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl2/BCl3-Based Inductively Coupled Plasma

A study of Cl2/BCl3-based inductively coupled plasma (ICP) was conducted using thick photoresist mask for anisotropic etching of 50 μm diameter holes in a GaAs wafer at a relatively high average etching rate for etching depths of more than 150 μm. Plasma etch characteristics with ICP process pressure and the percentage of BCl3 were studied in greater detail at a constant ICP coil/bias power. The measured peak-to-peak voltage as a function of pressure was used to estimate the minimum energy of the ions bombarding the substrate. The process pressure was found to have a substantial influence on the energy of heavy ions. Various ion species in plasma showed minimum energy variation from 1.85 to 7.5 eV in the pressure range of 20 to 50 mTorr. The effect of pressure and the percentage of BCl3 on the etching rate and surface smoothness of the bottom surface of the etched hole were studied for a fixed total flow rate. The etching rate was found to decrease with the percentage of BCl3, whereas the addition of BCl3 resulted in anisotropic holes with a smooth veil free bottom surface at a pressure of 30 mTorr and 42% BCl3. In addition, variation of the etching yield with pressure and etching depth were also investigated.     

Study on the properties of a ε-Fe3N-based magnetic lubricant prepared by DBD plasma

The ε-Fe₃N-based magnetic lubricant which is stable and high saturation magnetization has been prepared by a homemade DBD device under the atmospheric pressure. The results show that the NH3 flow rate, the applied peak-to-peak voltage and the mass ratio of surfactant and carrier lubricant have important effects on the phase structure, the magnetic properties, the size of ferroparticles and the stability of the ε-Fe3N-based magnetic lubricant. TEM images show the ε-Fe₃N ferroparticles are dispersed in the carrier lubricant homogeneously, and the cluster phenomenon is not observed. The stable ε-Fe3N-based magnetic lubricant with the saturation magnetization of 50.11 mT and the mean ferroparticle size of 11 nm is prepared successfully. The main particles of the atmospheric-pressure Ar/NH3/Fe(CO)5 DBD plasma are NH, N, N⁺, Fe, N₂, Ar, H_α, and CO; NH is a decomposition product of NH₃. Fe and N active radicals are two elementary species in the preparation of the ε-Fe3N-based magnetic lubricant in the atmospheric-pressure DBD plasma. There are two discharge modes for DBD plasma, namely, multi-pulse APGD and filamentary discharge. By increasing the applied peak-to-peak voltage from 4600 to 7800 V, the discharge mode is changed from single-pulse APGD with filamentary discharge to two-pulse APGD with filamentary discharge, and the Lissajous figure also converts from a quadrilateral with one step to two steps on the right-hand side.     

Analysis of optical emission spectroscopy data during silicon etching in SF6/O2/Ar plasma

Silicon etching is an essential process in various applications,and a major challenge for etching process is anisotropic high aspect ratio etching characteristics.The etch profile is determined by the plasma parameters and process parameters.In this study,the plasma state with each process parameters were analyzed through the optical emission spectroscopy(OES)plasma diagnostic sensor by both chemical and physical approaches.Electron temperature and electron density were additionally acquired using the corona model with OES data that provides chemical species information,and the etch profile was evaluated through scanning electron microscope measurement data.The results include changes in profile with gas ratio,bias power,and pressure.We figure out that factors like ion energy and ion angular distribution as well as chemical reaction affect the anisotropic profile.     

自悬浮定向流法制备Ti纳米颗粒及结构表征

采用自悬浮定向流法制备钛纳米颗粒,并使用透射电镜、X射线衍射和X射线光电子能谱等方法,对钛纳米颗粒的形貌、粒度、结构及性能进行研究。结果表明：钛纳米颗粒呈球形,随着冷却气体Ar流速的增加,平均粒径逐渐减小,在流速为0.6、0.8和1.0 m³/h条件下,分别得到平均粒径为59、50和41 nm的钛纳米颗粒;在空气中,钛纳米颗粒极易氧化生成二氧化钛,同时能够与空气中的N₂和水蒸气发生反应,生成少量的氮化物及羟基基团。     

Effect of N_2 and O_2 on OH radical production in an atmospheric helium microwave plasma jet

UV-pulsed laser cavity ringdown spectroscopy of the hydroxyl radical OH(A–X)(0–0)band in the wavelength range of 306–310 nm was employed to determine absolute number densities of OH in the atmospheric helium plasma jets generated by a 2.45 GHz microwave plasma source.The effect of the addition of molecular gases N_2 and O_2 to He plasma jets on OH generation was studied.Optical emission spectroscopy was simultaneously employed to monitor reactive plasma species.Stark broadening of the hydrogen Balmer emission line(H_β)was used to estimate the electron density nein the jets.For both He/N_2 and He/O_2 jets, newas estimated to be on the order of 10~(15)cm~(-3).The effects of plasma power and gas flow rate were also studied.With increase in N_2 and O_2 flow rates, netended to decrease.Gas temperature in the He/O_2 plasma jets was elevated compared to the temperatures in the pure He and He/N_2 plasma jets.The highest OH densities in the He/N_2 and He/O_2 plasma jets were determined to be 1.0?×10~(16)molecules/cm~3 at x?=?4 mm(from the jet orifice)and 1.8?×?10~(16)molecules/cm~3 at x=3 mm, respectively.Electron impact dissociation of water and water ion dissociative recombination were the dominant reaction pathways, respectively, for OH formation within the jet column and in the downstream and far downstream regions.The presence of strong emissions of the N_2~+ bands in both He/N_2 and He/O_2 plasma jets, as against the absence of the N_2~+ emissions in the Ar plasma jets, suggests that the Penning ionization process is a key reaction channel leading to the formation of N_2~+ in these He plasma jets.     

Surface modification of silicone rubber by CF4 radio frequency capacitively coupled plasma for improvement of flashover

The flashover performance of insulating materials plays an important role in the development of high-voltage insulation systems. In this paper, silicone rubber(SIR) is modified by CF₄ radio frequency capacitively coupled plasma (CCP) for the improvement of surface insulation performance. The discharge mode and active particles of CCP are diagnosed by the digital single-lens reflex and the spectrometer. Scanning electron microscopy and x-ray photoelectron spectroscopy are used for the surface physicochemical properties of samples, while the surface charge dissipation, charge accumulation measurement, and flashover test are applied for the surface electrical characteristics. Experimental results show that the fluorocarbon groups can be grafted and the surface roughness increases after plasma treatment. Besides, the surface charge dissipation is decelerated and the positive charge accumulation is inhibited obviously for the treated samples. Furthermore, the surface flashover voltage can be increased by 26.67% after 10 min of treatment. It is considered that strong electron affinity of C–F and increased surface roughness can contribute to deepening surface traps, which not only inhibits the development of secondary electron emission avalanche but also alleviates the surface charge accumulation and finally improves the surface flashover voltage of SIR.     

On the green aurora emission of Ar atmospheric pressure plasma

The Ar atmospheric pressure plasma was found to be an excellent laboratorial source for green aurora emission. However, the characteristic and production mechanism of the green aurora emission of the Ar atmospheric pressure plasma are still not clear. In this work, an Ar plasma in a long glass tube which emits intense green aurora light is investigated. With the long glass tube, it can be concluded that the green aurora emission in the Ar plasma is not owing to the mixture of Ar plasma plume with the surrounding air. It is also found that the green aurora emission often appeared beyond the active electrode when the active electrode is placed at the downstream of the gas flow. The green emission disappears when the traces amount of O₂ or N₂ (about 0.05%–0.07%) is added to Ar. This is because the O₂ molecules deactivate the upper state O(1S), which results in the decrease of the green emission. On the other hand, when N₂ is added, Ar metastable atoms are quenched by N₂, which results in the decrease of O atoms and eventually leads to the decrease of the green emission intensity. The intensity of the green aurora emission increases when the driving voltage frequency increases from 1 to 10 kHz. More importantly, it is found that the green aurora emission is not affected when a grounded stainless steel needle is in contact with the plasma plume. Thus, the green emission is not driven electrically. All these findings are helpful for the understanding of the physics and its applications of atmospheric pressure plasma jet in space physics, laser physics and other application areas.     

New production systems at ISOLDE

New target systems for the ISOLDE on-line mass separator facility are presented. Targets of carbides, metal/graphite mixtures, foils of refractory metals, molten metals and oxides have been tested. Beams of high intensity of neutron-rich isotopes of a large number of elements are obtained from a uranium carbide target with a hot plasma-discharge ion source. A target of ZrO₂ has been shown to provide high intensity beams of neutron-deficient isotopes of Mn, Cu, Zn, Ga, Ge, As, Se, Br, Kr and Rb, while a SiC target with a hot plasma ion source gives intense beams of radioactive isotopes of a number of light elements. All these systems are rather chemically unselective. Chemically selective performance has been obtained for several systems, i.e.: the production of neutron-deficient Au from (³He, pχn) reactions on a Pt/graphite target with a hot plasma ion source; the production of neutron-deficient Lu and LuF⁺ and Hf and HfF₃⁺ from a Ta-foil target with a hot plasma ion source under CF₄ addition; the production of neutron-deficient Sr as SrF⁺ and Y as YF₂⁺ form a Nb-foil target with a W surface ionizer under CF₄ addition; the production of neutron-deficient Se as COSe⁺ from a ZrO₂ target with a hot plasma ion source under O₂ addition; and the production of radioactive F from a SiC target with a hot plasma ion source operating in Al vapour.     

Estimation of plasma parameters in the process of micro-scale powder plastic and characteristics of its products

The temperature and density of plasma jets were estimated with a Boltzmann plot and Stark broadening of Ar I (696.54 nm) lines by optical emission spectroscopy (OES) in the process of plasma plastic, and the morphology and microstructure of tungsten (W) powders were investigated by scanning electron microscope (SEM) and x-ray Diffraction (XRD), respectively. The results show that the assumption of local thermodynamic equilibrium (LTE) was invalid at the end of the plasma jets, and earlier than this after the injection of tungsten powder. The temperature and electron density of the plasma jets were up to about T=6797 K with Q_c=50 slpm and n_e=1.05×10¹⁶ cm⁻³ with Q_s=115 slpm at Z=60 mm, respectively, and both dropped rapidly with the injected tungsten powders of 20 μm. After the plasma plastic process, the spherical tungsten powders were prepared and there were some satellite particles on the surface of the spherical products. The tungsten powders were both composed of a single equilibrium α-W phase with a body centered cubic (bbc) crystal structure before and after plasma treatment.     

Investigation of working pressure on the surface roughness controlling technology of glow discharge polymer films based on the diagnosed plasma

The effects of working pressure on the component, surface morphology, surface roughness, and deposition rate of glow discharge polymer(GDP) films by a trans-2-butene/hydrogen gas mixture were investigated based on plasma characteristics diagnosis. The composition and ion energy distributions of a multi-carbon(C_4H_8/H_2) plasma mixture at different working pressures were diagnosed by an energy-resolved mass spectrometer(MS) during the GDP film deposition process. The Fourier transform infrared spectroscopy(FT–IR), field emission scanning electron microscope(SEM) and white-light interferometer(WLI) results were obtained to investigate the structure, morphology and roughness characterization of the deposited films, respectively. It was found that the degree of ionization of the C_4H_8/H_2 plasma reduces with an increase in the working pressure. At a low working pressure, the C–H fragments exhibited small-mass and high ion energy in plasma. In this case, the film had a low CH_3/CH_2 ratio, and displayed a smooth surface without any holes, cracks or asperities. While the working pressure increased to 15 Pa,the largest number of large-mass fragments led to the deposition rate reaching a maximum of 2.11 μm h~(-1), and to hole defects on the film surface. However, continuing to increase the working pressure, the film surface became smooth again, and the interface between clusters became inconspicuous without etching pits.     

The current pulses characteristics of the negative corona discharge in SF6/CF4 mixtures

This paper presents the results of numerical investigation of the current pulses characteristics in SF₆/CF₄ mixtures for the negative point-plane corona discharge. The pressure and the temperature of gas mixtures are 0.4 MPa and 300 K, respectively. The CF₄ content varies from20% to 80%. The 2D axisymmetric geometry with point-plane electrodes is investigated, and the three drift-diffusion equations are solved to predict the characteristics of the negative corona...