具有低能耗辅助电路的并联谐振直流环节逆变器

为提高逆变器的转换效率,提出了一种具有低能耗辅助谐振电路的并联谐振直流环节逆变器.在传统硬开关逆变器的直流环节添加辅助谐振电路,使直流母线电压周期性地归零,实现逆变桥主开关器件的零电压开关,而且辅助开关器件也可以实现零电压关断和零电流开通.此外,其辅助谐振电路只有一个辅助开关器件,控制简单;辅助开关和谐振元件都位于直流母线的并联支路上,有利于降低辅助谐振电路的能耗.对其工作原理进行分析,给出不同工作模式下的等效电路图和软开关的实现条件.制作一个5kW的实验样机,通过实验结果验证该软开关逆变器的有效性.     

具有软开关功能的三相谐振直流环节逆变器

为实现三相逆变器节能运行,提出一种具有软开关功能的三相谐振直流环节逆变器.直流侧的辅助谐振电路将参与换流过程,使直流环节电压在桥臂上的主开关动作之前变化到零,主开关能完成零电压软切换动作,通过降低开关损耗来实现逆变器节能运行.分析了1个开关周期内的电路工作流程.实验结果显示开关器件动作时处于软切换.因此,该辅助谐振电路结构对于研发节能型三相逆变器具有参考价值.     

节能型谐振直流环节逆变器

为改善逆变器的运行效率,提出了一种节能型三相谐振直流环节软开关逆变电路,在直流环节增设了辅助电路.当主开关需要切换时,提前使辅助电路进入谐振状态,将直流环节电压变化到零,保证主开关完成零电压软切换,并且辅助开关也能完成软切换.通过控制辅助开关切换的间隔时间来调节直流环节电压保持为零的时间,使逆变器能根据需要来调整脉宽调制策略.详细说明了电路的工作过程.实验结果表明逆变器主开关和辅助开关能完成软切换.因此,该拓扑结构对于研发高性能谐振直流环节逆变器具有借鉴意义.     

中小功率三相高频节能型谐振直流环节逆变器

为使中小功率三相逆变器实现在高开关频率下的节能运行,首次提出了一种新型三相谐振直流环节逆变器拓扑结构.设置在逆变器直流环节的辅助电路参与换流过程时,桥臂输入端的直流环节电压能周期性形成零电压状态,主开关和辅助开关都能完成零电压软切换.在高频金属氧化物半导体场效应晶体管（Metal Oxide Semiconductor Field Effect Transistor,MOSFET）作为该逆变器的开关器件时,实现零电压软切换能消除MOSFET的容性开通损耗,有利于优化逆变器效率.文中分析了电路的工作流程.2.5kW样机上的实验结果表明开关器件都处于零电压软切换.因此,该拓扑结构对于研发高性能的中小功率三相逆变器具有参考价值.     

新型单相软开关AC-DC-AC变换器

为改善单相AC-DC-AC变换器的性能,提出了一种单相谐振直流环节零电压开关AC-DC-AC功率变换器拓扑结构,由图腾柱式单相整流器,位于直流环节的辅助谐振电路和单相全桥逆变器组成.利用同一组辅助电路能分别将整流器输出端电压和逆变器输入端电压变化到零,使整流器和逆变器桥臂上的开关器件分别实现零电压切换.分析了电路的工作流程,在1.2kW样机上的实验结果表明开关器件完成了软切换.该拓扑结构对于研发节能型单相AC-DC-AC变换器具有借鉴意义.     

新型三相低能耗谐振直流环节逆变器

为实现三相逆变器的高效率运行,提出了一种新型三相低能耗谐振直流环节逆变器,利用设置在逆变器直流环节的辅助谐振电路使直流母线电压在每个开关周期都形成零状态时,主开关能实现零电压软开通动作和零电流软关断动作,完成了无损耗切换.说明了一个开关周期内的电路工作状态,在2.5 kW三相样机上的实验结果表明开关器件完成了软切换.因此,该新型拓扑结构对于改善逆变器运行效率具有重要意义.     

箝位二极管承受低电压的有源箝位谐振直流环节逆变器

为解决无源箝位谐振直流环节逆变器辅助电路中采用耦合电感辅助换流（即抽头电感法）所引起的箝位二极管两端承受的电压应力过大问题,提出一种箝位二极管承受低电压的有源箝位谐振直流环节逆变器,该逆变器采用有源箝位的方法可使箝位二极管两端承受的最大反向电压不超过直流母线电压的最大值.且该逆变器的辅助谐振电路中只有一个辅助开关器件,箝位电路中无需设置箝位开关,控制简单且硬件成本较低.此外,在箝位电路的作用下可将逆变器的直流母线电压箝位在输入直流电压的1.1~1.3倍,有效地降低了电压应力.以各个阶段下的等效电路为基础,对电路的工作过程进行了分析,并进行了实验验证,实验结果表明开关器件实现了软开关,且在额定功率3kW条件下,逆变器的效率达到96.5%.因此,该拓扑结构能够有效地提高工作效率.     

一种控制简单的谐振极型软开关逆变器

目前多数的谐振极型软开关逆变器拓扑结构中都设置了辅助开关器件来控制谐振过程,其控制方式要比原来的硬开关逆变器复杂。为此提出了一种控制简单的谐振极型软开关逆变器,其拓扑结构中没有功率开关器件,用原来硬开关逆变器的SPWM控制方式就能自然实现开关器件的零电流开通和零电压关断,而且通过拓扑结构中的储能元件,在死区时间内,输出相电流可以续流,降低了死区的影响,减小了输出相电流在低频时的畸变率。文中对其工作原理进行了分析,最后通过仿真和实验,验证了原理的正确性。     

新型三相谐振直流环节逆变器

为实现三相逆变器的高效率运行,提出了一种新型三相谐振直流环节逆变器拓扑结构,其在直流环节设置了结构简单的辅助谐振电路.分析了电路的工作流程.实验结果表明开关器件实现了软切换,而且逆变器输出电流波形无明显畸变.因此,该逆变器能实现高效率稳定运行.     

高效率三相谐振极逆变器

为优化三相逆变器的性能,提出了一种高效率三相谐振极逆变器.在各相桥臂上增设的辅助谐振电路参与逆变器的换流过程时,桥臂上的各主开关并联的谐振电容的电压能周期性形成零状态,使主开关能完成零电压软切换,而且辅助谐振电路中的各开关器件也能完成零电流软开通和零电压软关断.开关器件实现软切换能降低开关损耗,从而使逆变器实现高效率运行.文中分析了电路的工作流程.3kW样机上的实验结果表明主开关和辅助开关都处于软切换.因此,该拓扑结构对于研发高性能三相逆变器具有借鉴价值.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first     

JOURNAL OF ELECTRONICS(CHINA)

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NEXT GENERATION WIRELESS NETWORKS–ESPECIALLY THE USE OF MILLI-MICROWAVE BANDS

The global bandwidth shortage of wireless communications has motivated the exploration of the naillimeter wave （ram-wave） frequency spectrum for the next generation wireless communications. Recent advances in RF CMOS technology and high speed baseband signal processing technologies have enabled tile extensive research and development of turn-wave wireless communications. The multi gigabit per second data rate of ram-wave system will lead to applications in many important scenarios, such as WPAN, WLAN,back-haul for cellular system. And the frequency bands include 28 GHz, 38 GHz, 45GHz, 60GHz, E-BAND and even beyond 100 GHz. The propagation and the imitation of the RF circuits design in these frequency bands make the directional antennas be inevitable for mm-wave communications.