一种30 dB增益范围的CMOS可变增益放大器

采用0.25μm CMOS工艺设计了一种增益动态范围为30dB的可变增益放大器.该可变增益放大器以Gilbert单元为主体电路,在此基础上采用共源共栅结构,以及电流-电压负反馈的形式,极大地提高了电路的放大增益,并采用共模反馈回路,稳定了高阻输出节点的共模电压,还加入了指数控制电路,使增益与控制电压成dB-线性变化.电源工作电压3.3 V,电路功耗15 mW.     

一种高dB-线性宽动态范围CMOS可变增益放大器

基于TSMC 0.18 μm CMOS工艺,设计了一种高dB-线性宽动态范围的CMOS可变增益放大器.拽数电路通过伪Taylor200 MHz构dB-可变增益单元采用可变跨导、可变负载结构.Hspice仿真结果显示,3-dB带宽为200 MHz,在dB-线性内,输出电压的增益动态范围达40 dB,误差在±0.5dB之内...     

宽带CMOS可变增益放大器的设计

采用TSMC 0.18μm RF CMOS工艺设计实现了一种对数增益线性控制型的宽带可变增益放大器.电路采用两级结构,前级采用电压并联负反馈的Cascode结构以实现良好的输入匹配和噪声性能;后级采用信号相加式电路实现增益连续可调.同时本文设计了一种新型指数控制电压转换电路,解决了射频CMOS电路中,由于漏源电流与栅源电压通常不为指数关系而造成放大器对数增益与控制电压不成线性关系的难题,实现了可变增益放大器的对数增益随控制电压呈线性变化.芯片测试结果表明,电路在1.8V电源电压下,电流为9mA,3dB带宽为430～2330MHz.增益调节范围为-3.3～9.5dB,最大增益下噪声系数为6.2dB,最小增益下输入1dB压缩点为-9dBm.     

一种用于A/D转换器的低电压CMOS带隙电压基准源

设计了一种在1V电压下正常工作的用于A/D转换器的低功耗高精度的CMOS带隙电压基准.电路主要包括了一个带隙基准和一个运放电路,而且软启动电路不消耗静态电流.电路采用0.18μm CMOS工艺设计.仿真结果显示,温度从-40~125°C,温度系数约为1.93ppm/°C,同时电源抑制比在10kHz时为38.18dB.电源电压从0.9V到3.4V变化时,输出电压波动保持在0.17%以内;电路消耗总电流为5.18μA.     

高电源抑制比的CMOS亚阈值多输出电压基准

基于工作在亚阈值区的MOS器件,运用CMOS电流模基准时CATA和PTAT电流求和的思想,提出一种具有低温漂系数、高电源抑制比(PSRR)的CMOS电压基准源,该电路可同时提供多个输出基准电压,且输出电压可调.该基准源基于CSMC 0.5 μm标准CMOS工艺,充分利用预调节电路并改进电流模基准核心电路,使整个电路的电源抑制比在低频时达到122 dB,温度系数(TC)在0～100℃的温度范围内约7 ppm/℃.     

一种利用门电路实现可靠启动的基准电流源

为了解决电流和模式的基准电路的潜在启动失败问题以及使电路更加低功耗、低复杂度、高稳定性,提出了一种利用数字门电路实现可靠启动的CMOS带隙基准电流源。Spectre仿真表明,在1.8 V电源电压下,功耗为180μW,电路输出20μA参考电流,温度系数为11.9 ppm,线性度为1 054 ppm/V,输出噪声电压为0.1 mV,电源抑制比为-42 dB。采用TSMC0.18μm CMOS工艺流片。测试结果表明,电路能在15.4μs内实现可靠启动,输出参考电压稳定在1.28 V,其温度系数为89 ppm。该基准电流源已经成功地应用于工业自动化无线传感网(WIA)节点芯片的频率综合器中,并取得良好的应用效果。     

一种指数增益控制型高线性CMOS中频可变增益放大器

采用跨导线性化技术设计了一种具有指数增益特性的高线性中频可变增益放大器.该放大器由电流调节型可变增益单元、宽范围指数电压转换电路及固定增益放大器构成.基于0.25μm CMOS工艺的测试结果表明,放大器实现了8～48dB的增益连续变化,差分输出1V峰峰值下的三阶互调失真小于-60dBc,最大增益处噪声系数为8.7dB,50Ω负载下三阶输出截点为14.2dBm.     

一种指数增益控制型高线性CMOS中频可变增益放大器

采用跨导线性化技术设计了一种具有指数增益特性的高线性中频可变增益放大器.该放大器由电流调节型可变增益单元、宽范围指数电压转换电路及固定增益放大器构成.基于0.25μm CMOS工艺的测试结果表明,放大器实现了8～48dB的增益连续变化,差分输出1V峰峰值下的三阶互调失真小于-60dBc,最大增益处噪声系数为8.7dB,50Ω负载下三阶输出截点为14.2dBm.     

基于0.5μm CMOS工艺的低压低功耗电流放大器

采用BSM30.5μm CMOS工艺,通过引入电流模式的缓冲级输入输出结构而设计了一种性能较高的CMOS电流反馈运算放大器.在1.5V的电源电压下,当偏置电流为1μA,负载电容为20pF时,对整个电路进行HSPICE仿真.结果表明,该电路结构达到了87dB的开环增益,23.8MHz的单位增益带宽,48°的相位裕度,139dB的共模抑制比,功耗仅为2.09mW.     

宽带CMOS可变增益放大器的设计

采用TSMC0.18μm RF CMOS工艺设计实现了一种对数增益线性控制型的宽带可变增益放大器,电路采用两级结构,前级采用电压并联负反馈的Cascode结构以实现良好的输入匹配和噪声性能;后级采用信号相加式电路实现增益连续可调,同时本文设计了一种新型指数控制电压转换电路,解决了射频CMOS电路中,由于漏源电流与栅源电压通常不为指数关系而造成放大器对数增益与控制电压不成线性关系的难题,实现了可变增益放大器的对数增益随控制电压呈线性变化,芯片测试结果表明,电路在1.8V电源电压下,电流为9mA,3dB带宽为430-2330MHz,增益调节范围为-3.3-9.5dB,最大增益下噪声系数为6.2dB,最小增益下输入1dB压缩点为-9dBm。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.