水热合成PZT热电体陶瓷材料烧结性的研究

本文对水热合成ＰＺＴ热电体陶瓷的烧结性进行了研究。结果表明：烧成温度为１１６０℃左右，比用传统的固相合成法烧成温度低６０℃，在烧结过程中，Ｐｂｏ的挥发速度比用固相法小得多。     

Pb(Zn1/3Nb2/3)O3-PbTiO3陶瓷的合成及性能

采用不同固相合成法对钙钛矿型Ｐｂ（Ｚｎ１／３Ｎｂ２／３）０．８Ｔｉ０．２陶瓷材料的合成过程进行了研究。ＸＤＲ结果表明,相同合成条件下,不同合成方法得到的陶瓷粉末钙钛矿含量不同,其中,传统固相合成法（ＰｂＯ＋ ＺｎＯ＋ Ｎｂ２Ｏ５＋ ＴｉＯ２）钙钛矿得率最低,简单先驱体合成法（ＰｂＯ＋ ＺＮ＋ ＴｉＯ２）钙钛矿得率较高,复合先驱体合成法（ＰｂＯ＋ ＺＮＴ）钙钛矿得率最高。先驱体合成法具有抑制Ｂ位复合钙钛矿固相合成过程中焦绿石相形成的作用。采用复合先驱体合成法以少量钛酸钡作为晶型稳定剂采用适当的合成工艺可以得到钙钛矿纯度大于９８％ Ｐｂ［（Ｚｎ１／３Ｎｂ２／３）０．８Ｔｉ０．２］Ｏ３ 陶瓷粉末。其具有较宽的烧成温度范围,该陶瓷材料的居里温度为１９０ °Ｃ,具有较高的压电常数,且压电常数随烧结温度的提高而降低。用ＤＴＡ 对各合成方法的配合料进行了研究,发现,差热特征峰峰位与合成过程中焦绿石的出现和钙钛矿的合成温度有很好的对应关系,差热分析可用以对Ｂ位复合钙钛矿合成进行动态研究     

单晶、薄膜及其它功能材料

４单晶、薄膜及其它功能材料９４１７２水热合成的ＰＺＴ粉体的烧结性及电气特性──水野正敏．歧阜县陶磁器试验场研究报告（日）．１９９２：２１～２４将ＰｂＯ和（Ｚｒ，Ｔｉ）（ＯＨ）粉末与ＫＯＨ溶液或蒸馏水制成浆料，放入聚四氟乙稀容器中进行水热处理。当浆料浓...     

准分子激光扫描淀积PZT/YBCO结构铁电薄膜

利用脉冲准分子激光（工作气体ＸｅＣｌ，波长３０８ｎｍ，脉宽２８ｎｓ）在外延ＹＢＣＯ／ＬａＡｌＯ３（１００）单晶基片上淀积了Ｐｂ（Ｚｒ０．５５Ｔｉ０．４５）Ｏ３铁电薄膜，ＹＢＣＯ薄膜既为生长高取向ＰＺＴ薄膜提供了晶体匹配条件，同时也为ＰＺＴ铁电薄膜提供了下电极。讨论了工艺参数对晶相结构和表面形貌的影响。用Ｘ射线衍射表征了该多层膜的晶相结构，扫描电镜观察其表面形貌。ＰＺＴ铁电薄膜的剩余极化为２１μＣ／ｃｍ２，矫顽场为６５ｋＶ／ｃｍ。     

(Sr,Pb)TiO3的自燃烧合成及性质

用自燃烧法合成了／单相（Ｓｒ,Ｐｂ）ＴｉＯ３,用ＴＧ、ＤＴＡ、ＸＲＤ、ＴＥＭ等手段分析了干凝胶自燃烧的反应过程,测量了粉末的晶粒尺寸,测试了（Ｓｒ,Ｐｂ）ＴｉＯ３的居里温度。结果表明,自燃烧法合成的（Ｓｒ,Ｐｂ）ＴｉＯ３陶瓷粉末的晶化温度为４１８℃。在５００～７００℃分别煅烧燃烧灰烬１ｈ,得到晶化的微细均匀的陶瓷粉末。５００℃的煅烧产物为主相,一次颗粒约为３０ｎｍ,其他温度煅烧的产物均为中方相,一     

一种新型硅基PT/PZT/PT夹心结构的电性能研究

以无机锆盐为原料,用溶胶－凝胶（Ｓｏｌ－Ｇｅｌ）法成功地在Ｐｔ／Ｔｉ／ＳｉＯ／Ｓｉ衬底上制备出一种新型Ｐｂ－ＴｉＯ３／Ｐｂ（Ｚｒ０．５３Ｔｉ０．４７）Ｏ３／ＰｂＴｉＯ（ＰＴ／ＰＺＴ／ＰＴ）夹心结构。这种结构对于ＰＺＴ的晶化有很好的促进作用,其最终的退火温度为７００℃Ｃ－Ｖ特性,介电步率响应,漏电等电性能测试表明这一新型夹心结构具有良好的铁电和介电性能。     

化学法制备的PTCR型（Sr,Pb）TiO3半导体陶瓷

采用化学共沉淀法制备（Ｓｒ１－ｘＰｂｘ）ＴｉＯ３粉末，在６０～２２０°Ｃ间获得了五种居里温度的ＰＴＣＲ型（Ｓｒ，Ｐｂ）ＴｉＯ３陶瓷。实验结果表明，材料室温电阻率低于２０Ωｃｍ，升阻比高于１０５．５。文中还给出了（Ｓｒ，Ｐｂ）ＴｉＯ３铁电体的四方→立方相转变温度（居里温度）、晶胞参数等一系列随Ｐｂ／Ｓｒ比变化的材料性质。     

中温烧结BaTiO3基瓷的非均匀结构对εr—T特性的影响

含低熔物Ｂｉ２Ｏ３．ｎＴｉＯ２及ＰｂＯ－Ｂ２Ｏ３的ＢａＴｉＯ３基中温烧结瓷料，通过改性物Ｌａ、Ｎｂ等在固－液相烧结过程中溶＝析和缺位补偿固液溶，主晶相ＢａＴｉＯ３晶粒形成核－壳结构，并存在玻璃相，这种非均匀结构对铁电相的制约作用引起瓷料的εｒ－Ｔ特性的改变。     

溶剂热条件下单质直接反应合成GaP纳米晶

在苯热条件下,以金属镓和白磷为原料直接反应合成了GaP纳米晶,并研究了反应温度对GaP纳米晶物相的影响。微观形貌观测结果则表明,在400℃合成的GaP纳米晶体粒度均匀,而且团聚现象较少。当温度为300℃时,GaP纳米晶的结晶质量较差,而当温度升高到500℃时,GaP纳米晶的结晶完整性得到改善,但是颗粒团聚现象变得比较严重。     

MgO在含铅PTCR陶瓷中的作用

研究了ＭｇＯ加入到含铅ＰＴＣＲ陶瓷中的作用。用碱土金属Ｍｇ２＋对（Ｂａ，Ｐｂ）ＴｉＯ３掺杂，在１２４０～１３００℃空气中烧结，获得工艺性能良好，烧结温度较低，电性能优良的ＰＴＣＲ陶瓷材料。试验结果表明：ＭｇＯ的加入降低了含铅ＰＴＣＲ陶瓷的烧结温度，抑制了ＰｂＯ的挥发。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.