陕西省陈耳金矿含金银矿物赋存状态研究

在野外地质调查的基础上,本文着重利用电子探针分析手段,对陈耳金矿床中产出的含金银矿物的赋存状态及成分进行了研究。研究发现,在早期形成的银金矿中,由核部到边缘,金的含量逐渐减少,而银的含量逐渐增加。碲银矿、硫银铋矿为本次研究工作中新发现的矿物,未见前人研究工作中有关于碲银矿、硫银铋矿的报道。碲银矿被包裹在硫银铋矿颗粒中产出,鉴于碲、铋和金相近的地球化学特征和密切关系,可将碲银矿和硫银铋矿作为找矿标志。     

电子探针在冀东峪耳崖金矿载金矿物研究中的应用

利用电子探针对矿相显微镜下难以分辨的矿物颗粒进行了微区图像及成分分析。峪耳崖金矿中的载金矿物为黄铁矿、碲铋矿。碲铋矿为本次工作中重点研究的载金矿物。根据矿物组合及矿物形成温度把碲铋矿分为早晚两期。碲铋矿多呈他形粒状,从早期到晚期碲铋矿中Fe元素含量降低而Te、Bi、Ag元素含量升高。利用背散射电子像可清晰地看到碲铋矿中包裹银金矿。通过比较碲铋矿中金的含量与黄铁矿中金的含量,看出碲铋矿中金的含量略高于黄铁矿中金的含量,可将碲铋矿作为找矿标志之一。     

陕西岚皋浦家沟铜矿床中硒矿物的赋存状态研究

笔者在对陕西省岚皋县浦家沟铜矿床进行矿物学研究的过程中,发现该矿床中存在硒铜银矿、硒铅矿等2种硒的独立矿物.利用电子探针分析结果计算得:硒铜银矿化学分子式为(Ag0.95~1.00 Cu0.95~1.00 Fe0.02~0.03)1.97~1.99(Se0.72~0.76 S0.22~0.27 Te0.01)1,硒铅矿化学分子式为(Pb0.96~0.98 Fe0.01~0.03 Cu0.01~0.03)1.00~1.01(Se0.86~0.93 S0.07~0.14)1.其中硒铜银矿分布于表生辉铜矿内部或边缘,与之关系密切;硒铅矿则主要分布于黄铁矿与黄铜矿的接触部位或黄铁矿内部,与方铅矿、闪锌矿等共生.硒铅矿作为一种中低温热液矿物,它的出现暗示浦家沟铜矿经历过中低温热液阶段;硒铜银矿由后期含Ag+、Cu+溶液与次生辉铜矿反应形成的,它的存在暗示该矿床经历过后期成矿作用的叠加改造.     

青海陆日格矿床中铋碲赋存形式的电子探针研究

本文主要利用电子探针对陆日格斑岩铜钼矿床中的Bi、Te矿物进行X射线元素图像分析及定量分析,明确了Bi、Te的赋存状态、分布形态及元素成分组合。研究结果表明,陆日格斑岩铜钼矿床中Bi、Te主要以两种形式赋存于矿石中。一种以类质同象的形式存在于黄铁矿中;另一种以独立矿物的形式存在于黄铁矿包体或裂隙中。独立矿物主要为自然铋、因硫铋碲矿、辉硫铋碲矿及硫铋铅矿等。矿床勘探开发需考虑Bi、Te等分散元素的综合利用,以提高矿区的经济价值。     

安徽双河超高压变质岩矿物包裹体的精细结构及其地质意义

由于岩石在快速抬升过程中包裹体内的流体超压而产生位错，流体沿位绪从包裹体进入主矿物，使原包裹体的流体密度减小，前人由显微测温所得到的低密度包课体是在低压下再平衡所形成的，但在光学尺度下未观测到再平衡过程中包裹体爆裂的证据。而透射电镜（TEM）可以提示纳米级至亚微米级流体包裹体内部的精细结构和化学特征以及矿物中的位借、晶体缺陷等与包裹体相关的信息。     

河南栾川三道庄钼钨矿床石榴石的矿物学特征研究

三道庄钼钨矿床位于河南省栾川县,为东秦岭多金属成矿带上的大型钨钼矿床之一。矿体赋存于矽卡岩中,以似层状产出。根据野外矽卡岩的产出状态,显微镜观察结合电子探针分析对三道庄钨钼矿床中矽卡岩的主要组成矿物石榴石进行了矿物学特征研究。石榴子石电子探针分析结果表明,石榴石属于钙铁榴石—钙铝榴石系列。结合前人的矿床地质、成矿年代学、流体包裹体研究及本次研究结果,认为该矿床为典型的矽卡岩成因类型。矿床形成过程中成矿流体经历了从早到晚温度和盐度下降,而pH值和氧逸度上升的过程。     

Effect of a thin W, Pt, Mo, and Zr interlayer on the thermal stability and electrical characteristics of NiSi

It is reported that the thermal stability of NiSi is improved by employing respectively the addition of a thin interlayer metal (W, Pt, Mo, Zr) within the nickel film. The results show that after rapid thermal annealing (RTA) at temperatures ranging from 650 °C to 800 °C, the sheet resistance of formed ternary silicide Ni(M)Si was less than 3 Ω/□, and its value is also lower than that of pure nickel monosilicide. X-ray diffraction (XRD) and raman spectra results both reveal that only the Ni(M)Si phase exists in these samples, but the high resistance NiSi₂ phase does not. Fabricated Ni(M)Si/Si Schottky barrier devices displayed good I-V electrical characteristics, with the barrier height being located generally between 0.65 eV and 0.71 eV, and the reverse breakdown voltage exceeding to 40 V. It shows that four kinds of Ni(M)Si film can be considered as the satisfactory local connection and contact material.     

Qualification of plastic encapsulated microcircuits (PEM) for avionicsBased on ``Plastic Encapsulated Microcircuits (PEM) Qualification Testing'''', by J. A. Scalise, which appeared in the Proceedings of the 46th Electronic Components and Technology Conference, Orlando, FL, U.S.A., 28–31 May 1996, pp. 392–397. © 1996 IEEE.

Microcircuit package qualification testing is used to establish the reliability of integrated circuit processes and devices as they relate to part packaging. This paper presents the results of package qualification tests conducted on plastic encapsulated microcircuits (PEMs) and plastic discrete devices (diodes, transistors) used in avionics applications. Highly accelerated stress test (HAST) and temperature cycle (TC) test results, including part failure mechanisms and associated failure rates, are provided. A variety of plastic package styles and integrated circuit functions have been tested. Examples of package styles tested include small outline (SO), plastic leaded chip carrier (PLCC), thin small outline package (TSOP), plastic quad flat package (PQFP) and plastic dual-in-line (PDIP).Manufacturers' devices have been evaluated and various plastic compounds have been compared to determine which provide optimum reliability. The testing showed that package qualification performance of PEMs is affected by type of compound, passivation (including die coat) and die size. HAST failures are caused by moisture penetration of the package while temperature cycle failures result from coefficient of thermal expansion (CTE) mismatch effects.