大束流离子注入机能量污染的研究

能够精确控制离子注入的能量从而控制掺杂的深度是离子注入机的重要特征。本文讨论了大束流离子注入机能量污染，产生的原因及降低能量污染的方法。     

离子注入实时监测

生产操作人员常采用光量监测法来控制离子注入工艺。当硅片的离子注入涉及到多台离子注入机为不同直径的硅片作离子注入,离子种类、剂量和能量范围很宽的时候,生产控制就成为提高效率和产量的决定性因素。要减少离子注入引起的失效以增加芯片的产量,工艺控制就得把离子注入引起的变化与其它电路制造步骤引起的变化区分开。Siliconix公司的生产操作人员现常用光量监测法来控制离子注入工艺,以实现有效的实时控制。     

砷化镓超高速电路用SI-GaAs材料——Ⅴ.离子注入技术;Ⅵ.介质/接触/栅材料

5.SI—GaAs的离子注入技术 在GaAs IC/工艺中,通常采用有选择的离子注入,在SI-GaAs衬底上,形成有源层、欧姆接触层、电阻层及器件之间的隔离层。 通过控制注入杂质的能量和剂量,来达到控制掺杂的浓度和深度。加速离子的能量在50～500keV的范围,注入离子的剂量一般在10~(11)～10~(17)/cm~2的范围;衬底可以在室温条件下或加热的条件下(<400℃)进行离子注入。     

离子注入中污染的产生及防护

本文概述了离子注入过程中污染产生的原因和防止污染的措施，特别强调了对微粒污染和金属污染的防护以满足ＵＬＳＩ加工对离子注入的要求。     

硅探测器加工中的离子注入工艺设计与控制

应用离子注入工艺可制备获得线性电流大、窗口死层薄的硅pin辐射探测器。首先简要介绍了离子注入工艺形成pn结的原理,重点根据技术要求进行了离子注入工艺设计和计算,分别得到了注入能量为40 keV和注入剂量为4×1014/cm2的两个重要控制参数。同时分析了在离子注入工艺中存在的影响因素和相应处理方法,对生产具有良好的指导作用。采用所设计的工艺参数制备获得的硅pin辐射探测器各项技术指标均满足要求,验证了离子注入工艺设计与参数控制的有效性。     

离子注入静电干扰对刻蚀速率的影响浅析

伴随半导体器件特征尺寸的逐渐缩小,在芯片制作过程中对各种污染缺陷的控制越发重要。离子注入可以达到设计掺杂纯度和注入精度的要求,但与此同时离子注入也具有负面效应,会影响到器件的电性参数和器件的良率。文章主要阐述因离子注入机晶片架内静电干扰导致刻蚀速率发生变化,进而引起缺陷形成的过程。通过改进离子注入机产生静电干扰的位置,达到消除缺陷的目的,为半导体设备传输过程中的升级改进提供有益参考。     

国外离子注入机发展概况

离子注入机经过二十多年来的发展,其主要技术指标,如加速能量、束流、注入剂量控制的均匀性和重复性以及生产率等都已达到较高的水平,在半导体工业中获得广泛的应用。国外从事离子注入机生产的主要工厂从1971年的八家增加到14家左右。据80年的统计材料,全世界离子注入机的销售总额为8890万美金,如平均按每台30万美元折算(80年的价格),相当于年产量为300台左右。据最近国外文献报导,近几年离子注入     

离子注入机的辐射剂量

一、引言随着器件工艺的不断发展,对离子注入机提出了更高的要求,70年代初的离子注入机只能获得几十微安的束流,称为弱流离子注入机。近年来,广泛采用的是中束流离子注入机,束流可达几百微安,能量一般在200kev以下。同时束流达毫安级的大束流离子注入机,能量在100kev以下,也得到迅速的发展。随着束流的提高,注入剂量的增大,离子注入机的辐射剂量也随之增大。测量结果表明,离子注入机的辐射线主要是X—γ射线,为了减少辐射线对工作人员的危害,并为设计离子注入机提供一些参数,我们对我所生产的LC_2和LC_3型离子注入机,以及国内现有部分离子注入机的辐射剂量进行了较全面的调查和测量.本文简要介绍我们的调查和测量结果。     

透射电镜原位研究Ni纳米晶粒成核生长

离子注入能够精确地控制能量和剂量 ,能够注入几乎所有的元素 ,甚至同位素 ,而且注入离子形成的纳米晶粒镶嵌在衬底里 ,使得形成的纳米颗粒得到了很好的保护。近年来 ,离子注入绝缘衬底材料形成量子点结构成为研究的热点。随着离子注入技术和工艺的不断改善 ,该方法在工业应用中成本越来越低 ,相信会在今后的材料制备中得到更广泛的应用。本研究在法国核谱质谱中心 (ＣＮＳＮＭ)的离子注入机和透射电镜联机装置上进行[1] ,衬底材料是用电子束蒸发沉积而形成的非晶ＳｉＯ2 薄膜 ,厚度在 90～ 10 0ｎｍ。选取适当的注入能量使注入离子的投影射…     

一台专用强流氧离子注入机的研制

制备SOI材料的SIMOX技术因其工艺简单、易控制、重复性好、成本低、易向商业化过渡等优点而引起了S0I材料界更为广泛的关注。SIMOX技术所需要的最关键的设备就是大束流专用氧离子注入机。专用氧离子注入机与常规离子注入机有较大的区别：注氧时间长，注入剂量大，注入过程中要求晶片保持600℃左右的高温，金属污染非常低。本文着重介绍一台专用强流氧离子注入机主要结构单元的研制方法及工艺试验结果分析。     

Plasma doping for ultra-shallow junctions

Plasma doping (PD) processes utilizing PH₃/He and B₂H₆/He plasmas to fabricate CMOS devices are presented. The applications of PD in ultra-shallow junctions are discussed. Low contamination levels and good device characteristics have been achieved. Based on its superior features such as low cost, high throughput, very low implant energy, low contamination, etc., this novel doping technique has been demonstrated as a good candidate for the next generation microelectronics.     

PtSi红外探测器截止波长延长研究

讨论了将PtSi红外探测器截止波长延长的理论基础,并介绍了采用在衬底掺入T1^ 和Ir^ ,MBE生长P^ 层以及低能离子入注B^ ,In^ 未延长PtSi红外探测器截止波长的三种方法。     

Influence on Conductivity of Polyparaphenylene by Chemical Doping and Ion Implantation

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大角度离子注入机中的颗粒污染

针对大角度离子注入机中的颗粒污染进行了分析和探讨,着重描叙了颗粒的产生,对注入掺杂的影响;介绍了颗粒的测量和监控;重点列出了如何从设计上减少颗粒污染的产生途径以及生产设备怎样预防颗粒污染。     

Particle-beam fabrication and in situ processing of integrated circuits

Particle beams, in their broadest context, have become the most common tools in the kit of the IC process engineer, In this paper the general characteristics of particle-beam technologies are systematically classified and critical applications issues are outlined. The uses of ion, electron, and photon beams for various processes (e.g., thin-film deposition, lithography, etching, doping) are reviewed and critical issues are highlighted. The feasibility of integrating several advanced beam processes to achieve a totally in situ process is discussed. Particulate contamination in "clean"- room environment and under vacuum conditions is addressed and related to chip defects and yield. The relative advantages, in terms of facility and operating cost, flexibility, device performance, of an in situ process are considered.     

金属离子掺杂纳米TiO2光催化研究进展

综述了近年来金属离子掺杂纳米TiO2光催化的研究现状,对其掺杂机理、制备方法(溶胶–凝胶法、沉淀法、浸渍法、水热法等)和影响TiO2光催化效率与光谱响应范围的因素,如掺杂金属离子的种类、浓度、能级、电子构型、半径、化合价等进行了探讨,并对今后的研究作出了展望。     

Identifying the Electrostatic and Entropy-Related Mechanisms for Charge-Transfer Exciton Dissociation at Doped Organic Heterojunctions

The electron donor/acceptor (D/A) heterojunction is the core for photocharge generation and recombination in organic photovoltaics (OPVs). Developing practical methods for the D/A heterojunction modification remains challenging and is rarely discussed in OPV research. Herein, the roles of molecular doping at the D/A heterojunction in the charge-transfer exciton dissociation and detailed energy loss are investigated, and new insights are gained into the functions of doping on the OPV performance. Heterojunction doping simultaneously enhances all three OPV parameters, especially the short-circuit current (J_sc). It is shown that the J_sc improvement is due to the combined effects of strengthened electric field and reduced activation energy, which is regulated via an entropy-related mechanism. The performance enhancement is further demonstrated in homojunction devices showing the great potential of interfacial doping to overcome the intrinsic limitation between high J_sc and open-circuit voltage (V_oc) in OPVs.     

离子束合成SIMOX技术的进展

综述了离子束科学技术领域新的重要进展－－从作为半导体掺杂手段的低剂量离子注入到高剂量离子注入合成新材料的离子束合成技术，讨论了高剂量注入的物理效应，介绍了利用高剂量氧注入硅合成ＳＩＭＯＸ材料的物理过程以及ＳＩＭＯＸ技术的多种应用，提出了提高ＳＩＭＯＸ材料性能的各种途径。     

A novel technique for in-line monitoring of micro-contamination andprocess induced damage

The use of a simple, rapid and nondestructive technique for inline monitoring of electrically active impurities introduced during wafer fabrication is reported. This AC surface photovoltage-based technique can determine the substrate doping type, doping concentration, oxide charge, and energy distribution of interface traps on both bare and oxidized silicon wafers without the formation of gate electrodes and substrate contacts. The technique is shown to have good reproducibility and resolution for quantifying the electrically active impurities, on the order of 1×10¹⁰ q/cm². Detection of contaminants and static charges by this technique is shown to correlate well with the electrical performance of thin dielectrics. The use of this technique for inline monitoring of very low levels of plasma-induced damage in the SiO₂/Si system is also discussed as is the potential for this tool in reducing furnace downtimes and in prompt identification of the source of contamination     

Characterisation of Se implanted layers for GaAs FETs

Results on doping profile, uniformity of doping and mobility for Se implanted LEC grown semi-insulating GaAs substrates are presented as a function of Se ion energy and annealing temperature. SiO₂, RF sputtered Si₃N₄ and Ga₂O₃+Al are used as encapsulating layers. Surface effects (stress and damage) on doping efficiency of implanted Se ions are also included.