Growth of III–V compounds by liquid phase epitaxy

In this paper, we shall review important aspects of the growth of thin single crystal layers of binary, ternary and quaternary III–V compound semiconductors by liquid phase epitaxy (LPE). The emphasis will be on materials which can be grown lattice-matched to the common substrate materials GaAs, InP and GaSb. Usefulness and limitations of the LPE technique are highlighted.     

Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

It is shown that GaN layers can be grown on (100)-and (111)-oriented porous single-crystal GaAs substrates by molecular-beam epitaxy with plasma activation of the nitrogen by an rf electron cyclotron resonance discharge. The resulting undoped epitaxial layers possessed ntype conductivity with a carrier concentration ∼10¹⁸. Data obtained by scanning electron microscopy and cathodoluminescence indicate that at thicknesses ∼2000 Å, continuous layers of the cubic GaN modification are obtained regardless of the substrate orientation. Pis’ma Zh. Tekh. Fiz. 25, 3–9 (January 12, 1999)     

Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxy

This work describes a regular solution model that considers the free energy of the surface monolayer to explain the orientation-dependent phase separation in GaAsSb. In the proposed model, only the interaction between the second nearest-neighboring atoms sitting on the same monolayer contributes to the interaction parameter. Consequently, the parameter reduces to Ω/2 and Ω/3 for (111)B GaAsSb and (100) GaAsSb, where Ω denotes the parameter of bulk GaAsSb. By including the strain effect, the proposed model thoroughly elucidates the immiscibility behavior of (111)B GaAsSb and (100) GaAsSb.     

Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge

It is shown that GaN films can be grown by molecular-beam epitaxy with plasma activation of the nitrogen by a magnetron rf discharge in a specially constructed coaxial source with capacitive coupling. A growth rate of ∼0.1 μm/h is obtained on GaAs and sapphire substrates, and ways are found for optimizing the design of the plasma source in order to increase the growth rate. The electrophysical and luminescence properties of undoped epitaxial films are investigated at temperatures ranging all the way to room temperature. Pis’ma Zh. Tekh. Fiz. 24, 30–35 (June 26, 1998)     

Growth of high purity semiconductor epitaxial layers by liquid phase epitaxy and their characterization

This paper briefly describes our work and the results on the growth of several III-V epitaxial semiconductor materials in high purity form by liquid phase epitaxy (LPE) technique. Various possible sources of impurities in such growth are listed and step-by-step procedures adopted to reduce them are discussed in particular reference to the growth of GaAs layers. The technique of growing very high purity layers by treating the melt with erbium is described for the growth of InGaAs and GaSb layers.     

Improvement of GaN epilayer by gradient layer method with molecular-beam epitaxy

We demonstrated a molecular beam epitaxy method to resolve the dilemma between structural and morphological quality in growth of the GaN epilayer. A gradient buffer layer was grown in such a way that the N/Ga ratio was gradually changed from nitrogen-rich to gallium-rich. The GaN epitaxial layer was then grown on the gradient buffer layer. In the X-ray diffraction analysis of GaN(002) rocking curves, we found that the full width at half-maximum was improved from 531.69″ to 59.43″ for the sample with a gradient buffer layer as compared to a purely gallium-rich grown sample. Atomic force microscopy analysis showed that the root-mean-square roughness of the surface was improved from 18.28 nm to 1.62 nm over an area of 5 × 5 μm² with respect to a purely nitrogen-rich grown sample. Raman scattering showed the presence of a slightly tilted plane in the gradient layer. Furthermore we showed that the gradient layer can also slash the strain force caused by either Ga-rich GaN epitaxial layer or AlN buffer layer.     

Microhardness of silicon layers grown by liquid phase epitaxy

The microhardness of silicon epilayers grown from Sn fluxes is found to be lower than that of the silicon substrates and to significantly depend on the crystallographic orientation of the substrates. The microhardness values follow a Gaussian distribution in all of the epilayers. Unintentional impurities are shown to have a significant effect on the microhardness of the epilayers. The addition of ytterbium to the high-temperature solution reduces the microhardness of the epilayers.     

Growth of GaN nanotubes by halide vapor phase epitaxy

We have investigated low temperature growth of GaN nanostructures using halide vapor phase epitaxy on c-oriented Al(2)O(3) and Au coated Al(2)O(3) substrates. Depending on the III/V ratio and the growth temperature, the shape and density of the structures could be controlled. By increasing the GaCl partial pressure, the structure changed from dot-like to nanotubes. The nanotubes, which could be open or closed, were about 1 μm long with a diameter of typically 200 nm. In addition, it was observed that the nanostructures were spontaneously nucleated at droplets of Ga or, when using Au coated Al(2)O(3), on droplets of Au/Ga alloy. By varying the growth temperature, the inner diameter of the nanotubes could be controlled. The experimental results suggest that this approach with pre-patterned Au coated Al(2)O(3)substrates has the potential for fabrication of well-organized nanotubes with a high density.     

Design and fabrication of liquid phase epitaxy system

The design and fabrication of a simple and versatile liquid phase epitaxial (LPE) system has been described. The present LPE system makes use of the horizontal multi-bin boat and slider arrangement which enables the growth of even multilayered structures. The growth chamber is heated by a single-zone resistive furnace precisely controlled through a Eurotherm 902P temperature programmer and controller. The vacuum manifolds and accessories are set up in such a way as to ensure high vacuum needed for growth experiments. The provision is also made to admit high purity gases like hydrogen or nitrogen into the growth chamber. The design has been kept simple without sacrificing the versatility and adaptability for novel growth experiments. The typical films grown by this LPE system are also presented.     

Sapphire surface preparation for the growth of silicon layers by molecular-beam epitaxy

The structural perfection and surface morphology of sapphire substrates vacuum-annealed at atomic Si flux densities from 5 × 10¹⁵ to 1 × 10¹⁶ at/(cm² s) have been studied by electron diffraction, X-ray diffraction, and atomic force microscopy. The results demonstrate that, after annealing in the range 1160–1330°C, the sapphire has a smooth, single-crystal surface, which enables the growth of twin-free silicon epilayers at 600–700°C.     

Properties of Eu-Yb-Y magnetic garnet films grown by liquid phase epitaxy

Epitaxial films of Eu_yYb_zY_3?y?zFe_5?xGa_xO₁₂ have been deposited from PbO-B₂O₃ solution on (111) Gd₃Ga₅O₁₂ substrates. Saturation magnetization, characteristic length, coercivity, anisotropy and domain wall mobility are discussed in relation to film composition. The films exhibit reasonable mobilities, satisfactory quality factors and good temperature stability. The system appears to be a promising candidate for bubble device application.     

Growth of Cr2O3 whiskers by the vapour-liquid-solid mechanism

When a powder mixture composed of Cr₂O₃, A1₂O₃, SiO₂ and C was placed on a graphite powder in an alumina crucible with a lid, and the crucible was set in an electric furnace and heated to > 1350°C, Cr₂O₃, whiskers grew at the surface of the powder mixture. The microstructure in the powder mixture, thermal analysis of the powder mixture during heating, and whisker droplet were investigated. The whiskers were found to have grown by the vapour-liquid-solid (VLS) mechanism.     

Preparation of Si3N4 whiskers by reaction of wheat husks with NH3

-Si₃N₄ whiskers that are 1–10 mm long and 0.5–1.1 m thick were obtained by the reaction of wheat husks with NH₃ at 1250–1450 °C. A maximum whisker yield of about 30% was obtained at 1450 °C with the addition of an iron impurity. Whiskers with 1.3–2.2 m thickness (average 1.6 m) were obtained by the addition of an H₂S impurity. Thin whiskers with periodic thick and thin diameters were also obtained.     

Rib waveguides based on Zn-substituted LiNbO3 films grown by liquid phase epitaxy

The fabrication of epitaxially grown Zn-substituted LiNbO₃ (Zn:LiNbO₃) waveguide films and rib waveguides is reported and detailed investigations about microstructure, morphology and optical waveguide properties are provided. Zn:LiNbO₃ films were grown on congruent X-cut LiNbO₃ substrates by a modified liquid phase epitaxy in solid–liquid coexisting solutions. The homogeneously Zn-substituted films exhibit high crystalline perfection and extremely flat surfaces with averaged surface roughness of rms = 0.2–0.3 nm. At the film/substrate interface a Zn-containing transient layer has been observed, which allows the growth of elastically strained Zn:LiNbO₃ film lattices. X-ray diffraction reciprocal-space measurements prove the pseudomorphic film growth. The refractive index difference between substrate and film depends on the zinc substitution content, which increase with rising growth temperatures. For films with 5.3 mol% Zn (Δn_o ≈ +5 × 10⁻³) only ordinary ray propagation was observed, while for films with 7.5 mol% Zn (Δn_o ≈ +8 × 10⁻³, Δn_e ≈ +5 × 10⁻³) both modes, TM and TE propagate. Stress-induced refractive index changes are in the order of Δn ≈ 10⁻⁴. In rib waveguide microstructures singlemode propagation with nearly symmetrical field distribution has been observed. To demonstrate the potential of the proton exchange-assisted dry-etching technique interferometer microstructures were fabricated.     

Growth of Al2O3 whiskers by vapour-phase reactions

Needle-like or wool-like Al₂O₃ whiskers can be grown on a substrate by the hydrolysis of aluminium fluoride vapour. Effects of the growth conditions on the morphology of the crystals and growth processes of the whisker were investigated, and the optimum growth condition of whiskers was examined. Adequate vapour pressure conditions of the reactant gases for the growth of the wool-like whisker were found to be . Aluminium oxyfluoride was assumed to be the most probable intermediate species for the growth of Al₂O₃ whiskers. A variety of crystal morphologies are also shown and described with respect to the experimental conditions.     

Fabrication of Pb1‐xSnxTe/PbTe heterojunctions by liquid phase epitaxy

Abstract

Pb_1‐x Sn _x Te epitaxial layers were successfully grown on PbTe substrates by liquid phase epitaxy (LPE) technique. The compositions and surface morphology of the epitaxial Pb_1‐x Sn _x Te layers were controlled in the LPE growth, and p‐Pb_1‐x Sn _x Te/n‐PbTe heterodiodes with a good junction‐perfection factor were made.     

HgCdTe/CdZnTe液相外延材料的倒易空间图研究

采用高分辨X射线衍射的例易空间图研究了HgCdTe／CdZnTe(-0．044％晶格失配)液相外延材料界面处品格结构，结果显示，通常使用的10μm厚的碲镉汞液相外延材料的晶格相对碲锌镉衬底已处于完全弛豫状态，并且外延层和衬底的品向发生了0．01。的偏离，但是，由于外延层中存在着组分梯度以及衬底和外延层热膨胀系数存在着差异，界面处外延层中仍存在着应力和应变。对称衍射和非对称衍射的实验结果均显示外延材料的例易空间图沿垂直于散射矢量方向有所扩展．这一结果表明晶格失配的弛豫使得界面处外延层的晶体结构呈镶嵌结构。实验也发现，外延层的非对称衍射倒易空间图的扩展偏离散射矢量方向，根据弛豫线模型，这也是由于界面处外延层存在组分梯度和应变梯度所造成的。