磁量子结构中二维自旋电子的隧穿输运

研究了零偏压和偏置电压作用下磁量子结构中自旋电子的隧穿输运性质. 结果表明电子自旋 输运的性质不仅取决于磁量子结构的构型、入射电子的能量和波矢, 而且取决于偏置电压. 在零偏压下, 由等同的磁垒磁阱构成的磁量子结构不具有自旋过滤的特点, 而由不等同的磁 垒磁阱构成的磁量子结构却具有较好的自旋过滤特点. 偏置电压极大地改变了磁量子结构中 电子的极化程度, 使得电子隧穿等同的磁垒磁阱构成的磁量子结构的输运性质也显著地依赖 于电子的自旋指向. 关键词： 磁量子结构 自旋电子 隧穿输运 自旋极化     

多层结构双自旋过滤隧道结中的电子输运特性

在转移矩阵方法及Mireles和Kirczenow的量子相干输运理论的基础上,研究了正常金属层/磁性半导体层/非磁绝缘层/磁性半导体层/正常金属层型双自旋过滤隧道结中Rashba自旋轨道耦合效应和自旋过滤效应对自旋相关输运的影响.讨论了隧穿磁电阻（TMR）、隧穿电导与各材料层厚度、Rashba自旋轨道耦合强度以及两磁性半导体中磁矩的相对夹角θ之间的关系.研究表明：含磁性半导体层的双自旋过滤隧道结由于磁性半导体层的自旋过滤效应和Rashba自旋轨道耦合作用可获得极大的TMR值.另外TMR和隧穿电导随着Rashba自旋轨道耦合强度的变化而振荡,振荡周期随Rashba自旋轨道耦合强度的增大逐渐减小. 关键词： 双自旋过滤隧道结 Rashba自旋轨道耦合 隧穿磁电阻 隧穿电导     

光场辐照下稀磁半导体/半导体超晶格中自旋电子输运特性研究

基于单电子有效质量近似理论和传递矩阵方法,理论研究了稀磁半导体/半导体超晶格结构中电子的自旋极化输运特性.主要讨论了光场和磁场联合调制对自旋极化输运的影响,以及不同自旋电子在该超晶格结构中的隧穿时间.理论和数值计算结果表明,由于导带电子与掺杂Mn离子之间的sp-d电子相互作用引起巨塞曼劈裂,因此在磁场调制下,不同自旋电子在该结构中感受到的势函数不同而呈现出自旋过滤效应,不同自旋电子的共振透射能带的位置和宽度可以通过磁场进行调制.同时在该结构中考虑光场时,自旋依赖的透射谱会因为吸收和发射光子而呈现出对光场的强度和频率响应;最后,通过不同自旋电子的高斯波包在该结构中随时间的演化给出了不同自旋电子的隧穿时间.本文研究结果对研究和设计基于稀磁半导体/半导体超晶格结构的高速量子器件具有一定的指导意义.     

对称双势垒量子阱中自旋极化输运的时间特性

电子的隧穿时间是描述量子器件动态工作范围的重要指标. 本文考虑k³ Dresselhaus 自旋轨道耦合效应对系统哈密顿量的修正, 结合转移矩阵方法和龙格-库塔法来解含时薛定谔方程, 进而讨论了电子在非磁半导体对称双势垒结构中的透射系数及隧穿寿命等问题. 研究结果发现:由于k³ Dresselhaus 自旋轨道耦合效应使自旋简并消除, 并在时间域内得到了表达, 导致自旋向上和自旋向下电子的透射峰发生了自旋劈裂; 不同自旋取向的电子构建时间和隧穿寿命不同, 这是导致自旋极化的原因之一; 电子的自旋极化在时间上趋于稳定. 关键词： 自旋极化输运 透射系数 隧穿寿命 自旋极化率     

铁磁金属量子阱态的共振隧穿

非铁磁金属层中的量子阱态在磁输运过程中的重要性已被广泛认识．铁磁金属层中自旋极化的量子阱态以前并没有详尽的理论研究；实验上也没有清晰地观测到自旋极化量子阱态的隧穿．文章介绍了最近由卢仲毅、张晓光和Pantelides预言的Fe／MgO／FeO／Fe／Cr和其他铁磁量子阱隧道结中的共振隧穿，并解释铁、钴、铬的△1能带的对称性在这种共振隧穿中的作用．     

对称抛物势阱磁性隧道结中的自旋输运及磁电阻效应

研究了两端具有铁磁接触的对称抛物势阱磁性隧道结(F/SPW/F)中自旋相关的隧穿概率和隧穿磁电阻,讨论了量子尺寸效应和Rashba 自旋轨道耦合作用对自旋极化输运特性的影响.研究结果表明:隧穿概率和隧穿磁电阻随抛物势阱宽度的增加发生周期性的振荡.抛物势阱深度的增加减小了隧穿概率和隧穿磁电阻的振荡频率.Rashba 自旋轨道耦合强度的增加加大了隧穿概率和隧穿磁电阻的振荡频率.隧穿概率和隧穿磁电阻的振幅和峰谷比强烈依赖于两铁磁电极中磁化方向的夹角. 关键词： 磁性隧道结 Rashba 自旋轨道耦合 隧穿概率 隧穿磁电阻     

双势垒磁性隧道结中量子阱共振隧穿效应的第一性原理理论

磁性隧道结材料中自旋相关的量子阱态所导致的共振隧穿现象具有很重要的研究和应用价值，文章介绍了最近在Fe（001）／MgO／Fe／MgO／Fe双势垒磁性隧道结中存在的量子阱共振隧穿效应的理论研究工作，通过量子阱态的第一性原理的计算以及结合对中间Fe薄膜孤岛结构所导致Coulomb阻塞效应的分析，证实了最近Nozaki等人（Nozaki T et al．Phys．Rev．Lett．，2006，96：027208）实验中得到的振荡效应确实来源于中间Fe层多数自旋电子在Г点处形成的△1对称性的量子阱态．Coulomb阻塞效应的存在正是导致实验中低温下量子阱共振隧穿效应不够明显的主要原因．     

ZnCdSe量子阱/CdSe量子点耦合结构中的激子隧穿过程

用室温光致发光谱和飞秒脉冲抽运探测方法对不同垒宽的ZnCdSe量子阱/ZnSe/CdSe 量子点新型耦合结构中激子隧穿过程进行研究，观察到激子从量子阱到量子点的快速隧穿过 程.在ZnSe垒宽为10nm, 15nm, 20nm时，测得激子隧穿时间分别为1.8ps, 4.4ps, 39ps. 关键词： ZnCdSe量子阱 CdSe量子点 激子 隧穿     

(CdZnTe,ZnSeTe)/ZnTe复合量子阱中激子隧穿过程

设计了(CdZnTe,ZnSeTe)/ZnTe复合量子阱结构,并用吸收光谱、室温光致发光谱和飞秒脉冲抽运-探测方法研究了该复合结构中的激子隧穿过程.分别测量了该结构中CdZnTe/ZnTe量子阱层和ZnSeTe/ZnTe量子阱层中激子衰减时间.观察到从CdZnTe/ZnTe量子阱层向ZnSeTe/ZnTe量子阱层的快速激子隧穿,隧穿时间为5.5ps. 关键词： (CdZnTe ZnSeTe)/ZnTe复合量子阱 激子 隧穿 抽运-探测     

能级填充对量子阱光学性质的影响

在特殊设计的三势垒双势阱结构中，利用来自发射极的电子注入和电子向收集极的共振隧穿 逃逸调控量子阱不同子能级上的填充状态，发现激发态上的电子占据起抑制量子限制Stark 效应的作用.在极低偏压下，量子阱中少量过剩电子诱发了用简单带—带跃迁无法解释的光致发光光谱行为. 关键词： 共振隧穿 光致发光 量子限制Stark效应 过剩电子     

Influence of time-periodic potentials on electronic transport in double-well structure

Within the framework of the Floquet theorem, we have investigated single-electron photon-assisted tunneling in a double-well system using the transfer matrix technique. The transmission probability displays satellite peaks on the both sides of main resonance peaks and these satellite peaks originate from emission or absorption photons. The single-electron resonance tunneling can be control through changing applied harmonically potential positions, such as driven potential in wells, in barriers, or in whole double-well system. This advantage should be useful in the optimization of the parameters of a transmission device.     

通过带有侧向耦合量子点的量子线中的光辅助隧穿

应用非平衡格林函数方法,研究了带有微波调制的侧向耦合量子点的量子线中的光辅助隧穿.在考虑了量子干涉和微波场的情况下,得出并讨论了电子传榆幅度和相位方面的信息.电子传输幅度显示出一系列的反共振峰(对应图中的谷结构).峰值的高度与振荡的微波场的幅度和频率有关,而峰的位置只与微波场的频率有关.在有限温的情况下,反共振峰值的高度随着温度的增加而减小,当温度足够高时,反共振峰会消失,特别地,在一定的温度下,低温下谷的地方会演变成峰.     

Anomalous photon-assisted tunneling in graphene

We investigated the transmission of Dirac electrons through a potential barrier in the presence of circularly polarized light. An anomalous photon-assisted enhanced transmission is predicted and explained. It is demonstrated that the perfect transmission for nearly head-on collision in infinite graphene is suppressed in gapped dressed states of electrons, which is further accompanied by a shift of peaks as a function of the incident angle away from head-on collision. In addition, the perfect transmission is partially suppressed by a photon-induced gap in illuminated graphene. After the effect of rough edges of the potential barrier or impurity scattering is included, the perfect transmission with no potential barrier becomes completely suppressed and the energy range for the photon-assisted transmission is reduced at the same time.     

Giant magnetoresistance caused by magnetic-field-sensitive resonant tunnelling in a random multibarrier semiconductor superlattice

By using a transmission probability formalism, we perform a calculation for the conductance related to the tunnelling of electrons through a semiconductor multibarrier superlattice with special thickness randomness in the presence of a magnetic field. Because of the sharp resonance of the tunnelling in such a structure, the current is highly sensitive to the variation of the in-plane magnetic field. The calculated results show a giant magnetoresistance even for small strength of the field. Possible applications of this effect are discussed.     

Time-dependent electron transport through an Aharonov–Bohm ring embedded with two quantum dots

The time-dependent electron transport through an Aharonov–Bohm ring embedded with two quantum dots in the presence of external microwave (MW) fields are investigated theoretically by using the nonequilibrium Green's function method. Whether the MW field can induce or suppress the Fano resonance depends on the part to which the field is applied. When the MW field is applied only to the two quantum dots, the photon-assisted Fano peaks appear at the sidebands of the original Fano peak. The existence of the original Fano peak or the photon-assisted ones can be controlled by the field strength. When the MW field is applied only to one lead, the original Fano peak is suppressed by the MW field, and the negative current caused by the electron–photon pump effects is found.     

Dynamic spin-polarized shot noise in a quantum dot coupled to ferromagnetic terminals under the perturbation of ac fields

We have investigated the shot noise in the mesoscopic system composed of a quantum dot (QD) coupled to ferromagnetic terminals under the perturbation of ac fields. The shot noise has been derived using the nonequilibrium Green's function (NGF) technique to describe the spin polarization effect along with photon absorption and emission processes in the Coulomb blockade regime. We have examined the influence of spin polarization on the shot noise under the perturbation of ac fields in the nonadiabatic regime. The Coulomb blockade effect results in the modification of shot noise compared with the noninteracting case. The spin orientation contributes a spin valve effect for controlling electron tunnelling through this QD, and different resonant forms appear around the Coulomb blockade channel. The photon-assisted spin-splitting and spin-polarization effect contributes a photon-assisted spin valve to adjust the electron tunnelling current and shot noise. The spin-polarization effect varies the value of the Fano factor. However, it does not change the noise type from sub-Poissonian to super-Poissonian.     

Photon-assisted and spin-dependent shot noise in magnetic-field tunable ZnSe/Zn_(1-x)Mn_xSe structures

We have investigated the photon-assisted shot noise properties in the magnetic field tunable heterostructures. Transport properties of the model structure are strongly dependent on the oscillatory field and the magnetic field. In this structure,electrons can absorb or emit one or multi-photons to reach the quasi-bound state. As a result, the transmission properties are affected considerably by photon-assisted tunneling and these features cause the nontrivial variations in the shot noise and Fano factor. It is found that the shot noise becomes spin-dependent and can be modulated not only by the magnetic field, but also by the oscillatory field. Both the spin-up and spin-down components of the shot noise can be greatly suppressed by the magnetic field, and can also be drastically enhanced by the harmonically driven field. Furthermore,with increasing external magnetic field, it is important to note that the enhanced intensity is decreased, even suppressed.These results suggest another method to suppress the shot noise via modulating the oscillatory field at a diluted-magneticsemiconductors/semiconductor structure.     

AC field-controlled Andreev tunneling through a serially-coupled double quantum dot system

AC field-controlled Andreev tunneling through two serially-coupled quantum dots are investigated theoretically by using the nonequilibrium Green's function method. The photon-assisted Andreev tunneling is studied in detail. It is found that the average current depends distinctly on the interdot coupling. In the weak interdot coupling case, the average current versus the gate voltage exhibit negative peaks on the left-hand side and positive peaks on the right-hand side of the Fermi level. However, in the strong interdot coupling case, the current exhibit both negative and positive peaks on each side of the Fermi level. Furthermore, the system can function as an electron pump capable of transporting electrons through the resonant photon-assisted Andreev tunneling.     

Quantum Creation of Closed Universe with Both Effects of Tunnelling and Well

A new “twice loose shoe“ method in the Wheeler-DeWitt equation of the universe wavefunction on the cosmic scale factor a and a scalar field φ is suggested,We analyze both the affections coming from the tunnelling effect of α and the potential well effect of φ,and obtain the initial values α0 about a primary closed universe which is born with the largest probability in the quantum manner,Our result is able to overcome the “large field difficulty“ of the universe quantum creation probabiltiy with only tunnelling effect.This new born universe has to suffer a startup of inflation,and then comes into the usual slow rolling inflation.The universe with the largest probalility maybe has a “gentle“ inflation of an eternal chaotic infltion.this depends on a new parameter q which describes the tunnelling character.     

均匀横向磁场条件下抛物量子阱结构中的共振隧穿

采用简单的数值计算方法研究了均匀横向磁场条件下通过抛物量子阱结构的共振隧穿。计算了几种GaAs-AlxGa1-xAs-GaAs抛物阱结构的透射系数。结果表明：磁场增加时，共振峰向高能区移动，新的共振峰出现；同时讨论了回旋中心在不同位置时，抛物阱结构的J-V 特性。我们发现回旋中心在抛物阱中心时更有助于解释实验，并且能够得到和实验一致的结果：磁场增加，电流峰值减少且向高偏压移动。