ZnO-activated formation of phase pure perovskite Pb(In1/2Nb1/2)O3-Pb(Zn1/3Nb2/3)O3-PbTiO3 powder

This paper reports on the phase formation of perovskite Pb(In_1/2Nb_1/2)O₃-Pb(Zn_1/3Nb_2/3)O₃-PbTiO₃ (PIN-PZN-PT) powder when doped with 0.04 to 0.83 mol% ZnO. Air calcination of undoped powder mixtures for 4 hours at 800°C resulted in a mixture of Pb₂Zn_0.29Nb_1.71O_6.565 pyrochlore, PIN-PZN-PT perovskite, and In₂O₃. ZnO dopant concentrations as low as 0.04 mol% increased the rate of perovskite formation and resulted in near phase pure perovskite powder of 0.5 μm particle size when heated at 800°C in air. In all cases PbTiO₃ and Pb(In_1/2Nb_1/2)O₃ formed prior to PIN-PZN-PT formation. ZnO doping promotes perovskite phase formation by increasing the reactivity of the intermediate pyrochlore phase by substituting Zn²⁺ on Nb⁵⁺ sites and forming oxygen vacancies when heated in air. Heating in high resulted in an incomplete reaction and a mixture of perovskite and pyrochlore whereas low resulted in phase separation into a mixture of rhombohedral perovskite, tetragonal perovskite, and pyrochlore. The sensitivity clearly shows that oxygen vacancies due to ZnO-doping are critical for synthesis of phase pure PIN-PZN-PT powder.     

Growth and characterization of large size lead-free ferroelectric K(Ta,Nb)O3 single crystal

Lead-free piezoelectric materials with excellent performance are greatly demanded for the environmental issues. The lead-free ferroelectric single crystals are therefore greatly concerned for their much higher piezoelectricity than the polycrystalline counterparts and the domain-tunable property. However, the growth of large size and high-quality lead-free ferroelectric crystals has always been a great challenge. In this work, a ferroelectric KTa_1-xNb_xO₃ (KTN) single crystal with an extremely large size of 25 × 25 × 37 mm³ was grown using the modified top-seeded solution growth method. The large size enabled us to carry out comprehensive investigations on the crystal. The complete sets of dielectric, piezoelectric, and elastic constants for the [001]_C-poled KTN crystal with quasi single domain state were determined. Results showed that the crystal exhibits high electromechanical coupling coefficients with k_t~0.642 and k₃₃~0.679. Furthermore, the orientation dependence of the piezoelectric, dielectric, and elastic properties was determined by the tensor matrix transformation technique, and the maximum d₃₃, , and k₃₃ were found along the polar direction [001]_C. This work not only provides important guidance for the growth technology of lead-free ferroelectric crystals but also offers essential datasets of lead-free alkali niobate system, which is of great importance for both theoretical studies and designs of electromechanical devices.     

Anisotropic domain switching in Pb(Mg1/3Nb2/3)O3‐0.30PbTiO3 single crystals with rhombohedral structure

Anisotropic domain switching paths in [001]‐, [011]‐, and [111]‐poled Pb(Mg_1/3Nb_2/3)O₃‐0.30PbTiO₃ single crystals were studied by in situ polarized light microscopic driven by an antiparallel electric field. Orientation‐dependent electric field induced polarization and strain behaviors were investigated systematically. For [001]‐oriented crystals, only one‐step 71° switching occurred during the domain switching process, resulting in the appearance of stripe domain walls whose traces on (001) plane were along 45° or 135° with respect to [100] direction. But for [011]‐oriented samples, a two‐step 71° switching was observed during 109° switching and the projections of formed twin domain walls on the (011) plane are along 35.3° or 144.7° with respect to [01] direction. Moreover, a three‐step 71° switching was found during 180° switching in [111]‐oriented samples. It was demonstrated by the produced domain walls whose projections on the (10) plane are along 35.3°, 90° or 160.6° with respect to [11] direction. The energetically motivated mechanism based on multistep polarization switching process was also proposed to explain the anisotropic domain switching paths. Our results provided a visualized observation on the ferroelectric domain switching process and also laid the solid foundations for controlling polarization order parameter in ferroelectric single crystals.     

High temperature‐insensitive ferro‐/piezoelectric properties and nanodomain structures of Pb(In1/2Nb1/2)O3–PbZrO3–Pb(Mg1/3Nb2/3)O3–PbTiO3 relaxor single crystals

For rhombohedral (R) Pb(In_1/2Nb_1/2)O₃–PbZrO₃–Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PIN–PZ–PMN–PT) relaxor single crystal, high temperature‐insensitive behaviors under different external stimuli were observed (remnant polarization P_r from 30°C to 180°C and piezoelectric strain d₃₃* from 30°C to 116°C). When electric field E ≥ 50 kV/cm in the case of an activation field E_a = 40‐50 kV/cm was applied, it was found that the domain switching was accompanied by a phase transition. The high relaxor nature of the R phase PIN–PZ–PMN–PT was speculated to account for the large E_a and high piezoelectric response. The short‐range correlation lengths extracted from the out‐of‐plane (OP) and in‐plane (IP) nanodomain images, were 64 nm and 89 nm, respectively, which proved the high relaxor nature due to In³⁺ and Zr⁴⁺ ions entering the B‐site in the ABO₃‐lattice and enhancing the disorder of B‐site cations in the R phase PIN–PZ–PMN–PT. The switching process of R nanodomain variants under the step‐increased tip DC voltage was visually revealed. Moreover, the time‐dependent domain evolution confirmed the high relaxor nature of the R phase PIN–PZ–PMN–PT single crystal.     

Lead-reduced Bi(Ni2/3Ta1/3)O3-PbTiO3 perovskite ceramics with high Curie temperature and performance

With increasing demand of high-temperature piezoelectric devices and growing concern over environment protection, a feasible reduction in lead from lead-based high Curie temperature piezoelectric materials are desperately needed. Herein, a new system of lead-reduced Bi(Ni_2/3Ta_1/3)O₃-PbTiO₃ (BNT-PT) ferroelectric ceramics is fabricated by a conventional solid-state sintering process. The phase transition behaviors as a function of composition and temperature, electrical properties, as well as the domain configurations from a microscopic level have been investigated in detail. The results indicate that crystal structures, phase transition behaviors, and electric properties of BNT-PT ceramics can be affected significantly by the content of BNT counterpart. Dielectric measurements show that xBNT-(1−x)PT ceramics transfer from the normal ferroelectrics to the relaxor ferroelectrics at compositions of x = 0.3-0.35. The BNT-PT ceramics exhibit high Curie temperature T_C ranging from 474 to 185°C with the variation in BNT content. The relative dielectric tunability n_r also rises from only 0.65% for 0.10BNT-0.90PT to 50.23% for 0.40BNT-0.60PT with increasing BNT content. The tetragonal-rich composition 0.30BNT-0.70PT ceramic possesses the maximum remnant polarization of P_r ~ 34.9 μC/cm². Meanwhile, a highest piezoelectric coefficient of d₃₃ ~ 271 pC/N and a high field piezoelectric strain coefficient of  ~ 560 pm/V are achieved at morphotropic phase boundary (MPB) composition of 0.38BNT-0.62PT. The maximum value of strain ~0.31% is obtained in the 0.36BNT-0.64PT ceramic. The largest electromechanical coupling coefficient k_p is 44.5% for 0.37BNT-0.63PT ceramic. These findings demonstrate that BNT-PT ceramics are a system of high-performance Pb-reduced ferro/piezoelectrics, which will be very promising materials for piezoelectric devices. This study offers an approach to developing and exploring new lead-reduced ferroelectric ceramics with high performances.     

Crystal structure,phonon modes,and bond characteristics of AgPb2B2V3O12 (B = Mg,Zn) microwave ceramics

AgPb₂B₂V₃O₁₂ (B = Mg, Zn) ceramics with low sintering temperature were synthesized via the conventional solid-state reaction route. Rietveld refinements of the X-ray diffraction patterns confirm cubic symmetry with space group . The number of observed vibrational modes and those predicted by group theoretical calculations also confirm the space group. At the optimum sintering temperature of 750°C/4 hours, AgPb₂Mg₂V₃O₁₂ has a relative permittivity of 23.3 ± 0.2, unloaded quality factor () of 26 900 ± 500 GHz (), and temperature coefficient of resonant frequency of 19.3 ± 1 ppm/°C, while AgPb₂Zn₂V₃O₁₂ has the corresponding values of 26.4 ± 0.2, 28 400 ± 500 GHz () and –18.4 ± 1 ppm/°C at 590°C/4 hours. Microwave dielectric properties of a few reported garnets and Pb₂AgB₂V₃O₁₂ (B = Mg, Zn) ceramics were correlated with their intrinsic characteristics such as the Raman shifts as well as width of A_1g Raman bands. Higher quality factor was obtained for lower full width at half-maxima (FWHMs) values of A_1g modes. The increase in B-site bond valence contributes to high and low |τ_f| with the substitution of Zn²⁺ by Mg²⁺. Furthermore, the high ionic polarizability and unit cell volume with Zn²⁺substitution contribute to increased relative permittivity.     

Highly (100)‐Oriented Bi(Ni1/2Hf1/2)O3‐PbTiO3 Relaxor‐Ferroelectric Films for Integrated Piezoelectric Energy Harvesting and Storage System

Highly (100)‐oriented 0.38Bi(Ni_1/2Hf_1/2)O₃‐0.62PbTiO₃ relaxor‐ferroelectric films were fabricated on Pt(111)/Ti/SiO₂/Si(111) substrates by introducing a lead oxide seeding layer. A moderate relative permittivity , a low dissipation factor (tan δ < 5%), and strong relaxor‐like behavior (γ = 0.74) over a broad temperature region were observed. The energy storage density of approximately 45.1 ± 2.3 J/cm³ was achieved for films with (100) preferential orientation, which is much higher than the value ~33.5 ± 1.7 J/cm³ obtained from films with random orientation. Furthermore, the PbO‐seeded films are more capable of providing larger piezoelectric response (~113 ± 10 pm/V) compared to the films without seeds (~85 ± 8 pm/V). These excellent features indicate that the highly (100)‐oriented 0.38Bi(Ni_1/2Hf_1/2)O₃‐0.62PbTiO₃ films could be promising candidates for applications in high‐energy storage capacitors, high‐performance MEMS devices, and particularly for potential applications in the next‐generation integrated multifunctional piezoelectric energy harvesting and storage system.     

Flash sintering produces eutectic microstructures in Al2O3–LaPO4 versus conventional microstructures in 8YSZ–LaPO4

While monazite (LaPO₄) does not flash sinter even at high fields of 1130 V/cm and temperatures of 1450°C, composite systems of 8YSZ–LaPO₄ and Al₂O₃–LaPO₄ have been found to more readily flash sinter. 8YSZ added to LaPO₄ greatly lowered the furnace temperature for flash to 1100°C using a field of only 250 V/cm. In these experiments, -Al₂O₃ alone also did not flash sinter at 1450°C even with high fields of 1130 V/cm, but composites of Al₂O₃–LaPO₄ powders flash sintered at 900-1080 V/cm at 1450°C. Alumina–monazite (Al₂O₃–LaPO₄) composites with compositions ranging from 25 vol% to 75 vol% Al₂O₃ were flash sintered with current limits from 2 to 25 mA/mm². Microstructures were evaluated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). A eutectic microstructure was observed to form in all flash sintered Al₂O₃–LaPO₄ composites. With higher power (higher current limits), eutectic structures with regular lamellar regions were found to coexist in the channeled region (where both the current and the temperature were the highest) with large hexagonal-shaped -Al₂O₃ grains (up to 75 m) and large irregular LaPO₄ grains. With lower power (lower current limits), an irregular eutectic microstructure was dominant, and there was minimal abnormal grain growth. These results indicate that Al₂O₃–LaPO₄ is a eutectic-forming system and the eutectic temperature was reached locally during flash sintering in regions. These eutectic microstructures with lamellar dimensions on the scale of 100 nm offer potential for improved mechanical properties.     

Sintering-driven effects on the band gap of (Pb,La)(Ti,Ni)O3 photovoltaic ceramics

In this work, the influence of the sintering temperature on the physical properties of (Pb_0.8La_0.2)(Ti_0.9Ni_0.1)O₃ (PLT-Ni) ceramics is reported. The experimental data revealed that the energy band gap of PLT-Ni ceramics could be tailored from approximately 2.7 to 2.0 eV by changing the sintering temperature from 1100°C to 1250°C. It is demonstrated that the simple substitution of Ti⁴⁺ by Ni²⁺ cations is effective to decrease the intrinsic band gap while increasing the tetragonality factor and the spontaneous polarization. However, the additional red-shift observed in the absorption edge of the PLT-Ni with increasing the sintering temperature was associated with a continuous increase in the oxygen vacancies () amount. It is believed that the impact of the creation of these thermally induced is manifold. The presence of and Ni²⁺ ions generate the Ni²⁺- defect-pairs that promoted both a decrease in the intrinsic band gap and an additional increase of the tetragonality factor, consequently, increasing the spontaneous polarization. The creation of Ni²⁺- defects also changed the local symmetry of Ni²⁺ ions from octahedral to a square pyramid, thus lifting the degeneracy of the Ni²⁺ 3d orbitals. With the increase in the sintering temperature, lower-energy absorbing intraband states were also formed due to an excess of , being responsible for an add-on shoulder in the absorption edge, extending the light absorption curve to longer wavelengths and leading to an additional absorption in “all investigated” spectrum as well.     

Crystal structure,defect relaxation,and microwave dielectric properties of Ba[(Mg1/3Nb2/3)1−xHfx]O3 solid solutions

Ba[(Mg_1/3Nb_2/3)_1?xHf_x]O₃ (BMNH, x = 0.05, 0.1, 0.15, 0.2) solid solutions were prepared via the solid‐state reaction method. The effect of BaHfO₃ on the crystal structure, microwave dielectric performance, and defect relaxation behavior of Ba(Mg_1/3Nb_2/3)O₃ (BMN) were studied. BaHfO₃ additions degraded the sintering activity of BMN powder, requiring a high sintering temperature (T_s) ~ 1650°C; but it could be effectively improved by a prolonged sintering process at a lower T_s of 1600°C. The well‐sintered BMNH ceramics (1600°C for 30 h) possessed a high densification >96%, and exhibited cubic perovskite structures without 1:2 cation ordering. Once doped with Hf, the low‐temperature relaxation in dielectric spectroscopy and thermally stimulated depolarization current (TSDC) for pure BMN disappeared, further indicating such relaxation is related to cation‐ordered structure. Oxygen vacancies, namely showing in‐grain and across‐grain‐boundary relaxation of ‐related defects, were the main defect types in BMNH. The concentrations of in‐grain decreased as x increased, which is beneficial to BMNH to maintain high Q × f values of 69 400‐73 000 GHz. Accompanied by a high ε_r of 33.27‐33.59 and a low τ_f of +13.6 to +20.7 ppm/°C, these materials have a good potential for applications in microwave components and devices.     

Fabrication of 0.24Pb(In1/2Nb1/2)O3-0.42Pb(Mg1/3Nb2/3)O3-0.34PbTiO3 transparent ceramics by conventional sintering technique

0.24Pb(In_1/2Nb_1/2)O₃-0.42Pb(Mg_1/3Nb_2/3)O₃-0.34PbTiO₃ transparent ceramics were fabricated by a conventional sintering technique. Through optimization of sintering conditions of calcination and sintering temperatures and time, the obtained ceramics showed high optical transmittance of 53% and 71% at light wavelengths of 1300 and 2000 nm, respectively. The ceramics showed a rhombohedral to tetragonal phase transition at ~120°C and a tetragonal to cubic phase transition at 222°C. These transition temperatures were higher than those of 0.67Pb(Mg_1/3Nb_2/3)-0.33PbTiO₃ ceramics. In addition, the ceramics had a ferroelectric hysteresis loop, a large piezoelectric constant d₃₃ of 407 pC/N, and a planar electromechanical coupling factor k_p of 52%. These results suggest that the transparent ceramics may be used as a temperature-stable, linear electro-optic material.     

Optical transition properties,internal quantum efficiencies,and temperature sensing of Er3+ doped BaGd2O4 phosphor with low maximum phonon energy

The hosts with low maximum phonon energy (MPE) are preferred since the nonradiative consumption of the luminescence centers in them are low. Among the low MPE hosts, the oxide ones are more favored owing to their excellent stability and easy synthesis. In this work, the optical and spectroscopic properties of BaGd₂O₄:Er³⁺ phosphor were studied. The MPE of BaGd₂O₄ host was observed from Eu³⁺ phonon sideband (PSB) spectrum and Raman spectrum to be 477 cm⁻¹ which does not second to the fluoride hosts. The refractive index, which is indispensable for Judd–Ofelt calculation, was confirmed from the both approaches of the Eu³⁺-probe and the band gap energy, and the similar refractive indices were confirmed, therefore the average refractive index 2.01 was used in the Judd–Ofelt calculation. The Judd–Ofelt parameters of Er³⁺ in BaGd₂O₄ host was confirmed to be = 7.91 × 10⁻²¹ cm², = 2.36 × 10⁻²¹ cm², and = 9.00 × 10⁻²² cm². Furthermore, the internal quantum efficiencies for ⁴F_9/2 and ⁴I_J (J = 9/2, 11/2, and 13/2) levels were determined. Finally, the optical temperature sensing properties were studied in detail, and the temperature calibration curve was experimentally derived, meanwhile the maximum absolute sensitivity was confirmed to be 0.0028 K⁻¹.     

Microstructure of mayenite 12CaO·7Al2O3 and electron emission characteristics

Electron emission characteristic, electrical conductivity of polycrystalline mayenite (12CaO·7Al₂O₃) electride, formation of [Ca₂₄Al₂₈O₆₄]⁴⁺(e⁻)₄ framework as a function of phase content, and microstructure have been investigated. The mayenite microstructure was investigated using high-resolution transmission microscopy which revealed the type cage structure of 12CaO·7Al₂O₃ partially filled by extra-framework oxygen ions. Incorporation of electrons by means of carbon ion template 12CaO·7Al₂O₃ produces complex structure, and an incomplete ion template 12CaO·7Al₂O₃ structure consisting of mixture of a [Ca₂₄Al₂₈O₆₄]⁴⁺(e⁻)₄ and [Ca₂₄Al₂₈O₆₄]⁴⁺(O²⁻)₂ framework had a direct effect on the electron emission. Surface chemistry and stability of the 12CaO·7Al₂O₃ electride have been studied using x-ray photoelectron spectroscopy. The work function of phase pure 12CaO·7Al₂O₃ electride was determined from direct thermionic emission data and compared to the measurement from ultraviolet photoelectron spectroscopy (UPS). Depending on the extent of ion template of 12CaO·7Al₂O₃ structure, a work function of 0.9–1.2 eV and 2.1–2.4 eV has been measured and thermionic emission initiating at 600°C.     

Dielectric resonator antenna with Y3Al5O12 transparent dielectric ceramics for 5G millimeter-wave applications

Microwave dielectric ceramics are considered to be one of the key materials for dielectric resonators (DR) and have very broad application prospects in the fifth generation (5G) mobile communication system. Here we have prepared high-quality factor Y₃Al₅O₁₂ (YAG) transparent dielectric ceramics using high-purity α-Al₂O₃ and Y₂O₃ powders by cold isostatic pressing of the vacuum sintered with tungsten meshes as the heating elements. Optimum relative permittivity () ~10.53, quality factor Q × f (Q = 1/dielectric loss, f = resonant frequency) ~95, 270 GHz (at =7.37 GHz), and temperature coefficient of resonant frequency (TCF) ~ −51.7 ppm °C⁻¹ were obtained at a sintering temperature of 1780°C for 12 h. For the first time, YAG transparent ceramic dielectric resonator antenna (DRA) is designed as a dominant mode and a higher-order mode using the aperture coupling feeding configuration excitation. The proposed transparent dielectric ceramic DRA can provide a broad impedance bandwidth of 4.193 GHz (ranging from 21.90 to 26.09 GHz) for S₁₁ < −10 dB, radiation efficiency of 92.1%, and compact DR unit. The proposed DRA can be used potentially as a 5G millimeter (mm)-wave multiple-input-multiple-output (MIMO) antenna unit.     

Low sintering temperature for lead-free BiFeO3-BaTiO3 ceramics with high piezoelectric performance

Through modification of the heat-treatment process using a higher heating rate and a lower binder burnout temperature, the piezoelectric performance of water-quenched 0.67Bi_1.05FeO₃-0.33BaTiO₃ (BF33BT) lead-free piezoelectric ceramics was improved. The observed physical properties of BF33BT ceramics were very sensitive to the process temperatures. The sintering temperature (T_S) was changed within a narrow temperature range, and its effects were investigated. The largest rhombohedral distortion (90°-α_R = 0.14°) and tetragonality (c_T/a_T = 1.022) were observed for the ceramic sintered at 980°C, and its Curie temperature was 476°C. This ceramic showed good piezoelectric properties and large grains; the piezoelectric sensor charge coefficient (d₃₃) was 352 pC/N, and the piezoelectric actuator charge coefficient () was 270 pm/V. The high piezoelectric performance and low T_S of BF33BT ceramics indicate their potential as new low-cost eco-friendly lead-free piezoceramics.     

Development of magnetically switchable high permittivity microwave dielectrics using La(Al1-xFex)O3

The introduction of transition metal doping, particularly Fe³⁺, into high-performance microwave dielectrics can make “smart” materials that switch between a high-Q, low loss state and a low-Q, high loss state using a small external magnetic field. In this study, the dielectric and magnetic properties of the high permittivity host material LaAlO₃ (ε_r = 22.5), when doped with Fe³⁺, are reported. Spin losses dominate the loss tangent at cryogenic temperatures and survive up to room temperature. Peaks in the loss tangent versus temperature relation are observed near 40, 75, and 215 K. Additional measurements of samples exposed to annealing in varying environments, combined with Debye analysis and the results of native defect energy predictions from density functional calculations[Phys Rev B. 2009;80:104115], allows us to associate the 40, 75, and 215 K peaks to the following reactions, , , and , respectively.     

Achieving single domain in rhombohedral and tetragonal Mn-doped Pb(In1/2Nb1/2)-Pb(Mg1/3Nb2/3)-PbTiO3 crystals for infrared detecting applications

The [111]-oriented rhombohedral Mn-doped 0.15Pb(In_1/2Nb_1/2)-0.55Pb(Mg_1/3Nb_2/3)O₃-0.30PbTiO₃ (Mn:PIMNT(15/55/30)) crystal and the [001]-oriented tetragonal Mn-doped 0.29Pb(In_1/2Nb_1/2)-0.29Pb(Mg_1/3Nb_2/3)O₃-0.42PbTiO₃ (Mn:PIMNT(29/29/42)) crystal were poled under different conditions. The pyroelectric performance of the two crystals as a function of poling temperature, as well as the relationship with ferroelectric domain configuration and phase structure was investigated systematically. The pyroelectric properties of the two crystals enhance with rising the poling temperature, which can be attributed to the improvement of the single state. And for the rhombohedral Mn:PIMNT(15/55/30) crystal locating near morphotropic phase boundary (MPB), the increase of tetragonal phase induces the deterioration of pyroelectric properties. Due to more residual tetragonal phase, the pyroelectric coefficient of the Mn:PIMNT(15/55/30) crystal poled at 150°C is lower than that poled at 100°C. In general, both the crystals poled above T_C achieve nearly single state, exhibiting the best pyroelectric properties with relatively high Curie temperature (T_C), where P = 9.71 × 10⁻⁴ C m⁻² K⁻¹, F_i = 3.88 × 10⁻¹⁰ m V⁻¹, F_v = 0.068 m² C⁻¹ and F_d = 29.7 × 10⁻⁵ Pa^−1/2 for the rhombohedral Mn:PIMNT(15/55/30) crystal (T_C = 171°C) and P = 6.78 × 10⁻⁴ C m⁻² K⁻¹, F_i = 2.71 ×10⁻¹⁰ mV⁻¹, F_v = 0.1 m² C⁻¹, F_d = 23.54 × 10⁻⁵ Pa^−1/2 for the tetragonal Mn:PIMNT(29/29/42) single crystal (T_C = 251°C), meeting the stable operation of infrared detector at relatively high environmental temperatures.     

Preparation and characterization of Pb(Lu1/2Nb1/2)O3–Pb(In1/2Nb1/2)O3–PbTiO3 ternary ferroelectric ceramics with high phase transition temperatures

To explore new relaxor‐PbTiO₃ systems for high‐power and high‐temperature electromechanical applications, a ternary ferroelectric ceramic system of Pb(Lu_1/2Nb_1/2)O₃–Pb(In_1/2Nb_1/2)O₃–PbTiO₃ (PLN–PIN–PT) have been investigated. The phase structure, dielectric, piezoelectric, and ferroelectric properties of the as‐prepared PLN–PIN–PT ceramics near the morphotropic phase boundary (MPB) were characterized. A high rhombohedral‐tetragonal phase transition temperature T_R‐T of 165°C and a high Curie temperature T_C of 345°C, together with a good piezoelectric coefficient d₃₃ of 420 pC/N, were obtained in 0.38PLN–0.20PIN–0.42PT ceramics. Furthermore, for (0.8?x)PLN–0.2PIN–xPT ceramics, the temperature‐dependent piezoelectric coefficients, coercive fields and electric‐field‐induced strains were further studied. At 175°C, their coercive fields were found to be above 9.5 kV/cm, which is higher than that of PMN–PT and soft P5H ceramics at room temperature, indicating PLN–PIN–PT ceramics to be one of the promising candidates in piezoelectric applications under high‐driven fields. The results presented here could benefit the development of relaxor‐PbTiO₃ with enhanced phase transition temperatures and coercive fields.