Fabrication and electrical properties of textured (Na,K)0.5Bi0.5TiO3 ceramics by reactive-templated grain growth

Textured (Na_0.85K_0.15)_0.5Bi_0.5TiO₃ (NKBT) ceramics with a relative density of >94% were fabricated by reactive-templated grain growth. Plated-like Bi₄Ti₃O₁₂ template particles synthesized by the NaCl–KCl molten salt process were aligned by tape casting in a mixture of original oxide powders. The effect of sintering temperature on the grain orientation and electrical properties of textured NKBT ceramics were investigated. The results show that the textured ceramics have a microstructure with plated-like grains aligning in the direction parallel to the casting plane. The degree of grain orientation increased at increasing sintering temperature. The textured ceramics show anisotropic electrical properties in the directions parallel and perpendicular to the casting plane. The dielectric constant parallel to {h 0 0} plane is three times higher than that of the perpendicular direction in textured NKBT ceramics. The optimized sintering temperature is 1150 °C where the maximum dielectric constant is 2041, the remnant polarization is 68.7 μC/cm², the electromechanical coupling factor (k₃₁) and the piezoelectric constant (d₃₃) amount to 0.31 and 134 pC/N, respectively.     

Enhancement in dielectric and ferroelectric properties of lead free Bi0.5(Na0.5K0.5)0.5TiO3 ceramics by Sb-doping

Lead free piezoelectric Bi_0.5(Na_0.5K_0.5)_0.5TiO₃ (pure and 1 wt.%, 2 wt.%, 4 wt.% Sb-doped) ceramics were synthesized away from its MPB. The crystalline nature of the BNKT ceramic was studied by XRD and SEM. Depolarization temperature (T_d) and transition temperature (T_c) were observed through phase transitions in dielectric studies which were found to increase after Sb-doping, thus increasing its usable temperature range. In the study of relaxation behavior, the activation energy for relaxation was found to be 0.33, 0.43, 0.57 and 0.56 eV for pure and Sb-doped samples, respectively. All samples were found to exhibit normal Curie-Weiss law above their T_c. Doping of Sb was found to restrain the diffused character of the pure sample. In P-E loop, Sb-doping was found to increase the ferroelectric properties.Pure and Sb-doped BNKT ceramics exhibited high values of piezoelectric charge coefficient (d₃₃) as 115, 121, 129 and 100 pC/N, respectively.     

Microstructure and piezoelectric properties of CuO-doped 0.95(K0.5Na0.5)NbO3-0.05Li(Nb0.5Sb0.5)O3 lead-free ceramics

The effects of sintering temperature and the addition of CuO on the microstructure and piezoelectric properties of 0.95(K_0.5Na_0.5)NbO₃-0.05Li(Nb_0.5Sb_0.5)O₃ were investigated. The KNN-5LNS ceramics doped with CuO were well sintered even at 940 °C. A small amount of Cu²⁺ was incorporated into the KNN-5LNS matrix ceramics and XRD patterns suggested that the Cu²⁺ ion could enter the A or B site of the perovskite unit cell and replace the Nb⁵⁺ or Li⁺ simultaneously. The study also showed that the introduction of CuO effectively reduced the sintering temperature and improved the electrical properties of KNN-5LNS. The high piezoelectric properties of d₃₃ = 263 pC/N, k_p = 0.42, Q_m = 143 and tan δ = 0.024 were obtained from the 0.4 mol% CuO doped KNN-5LNS ceramics sintered at 980 °C for 2 h.     

Effect of HfO2 content on the microstructure and piezoelectric properties of (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃–xHfO₂ [BNBT–xHfO₂] lead-free ceramics were prepared using the conventional solid-state reaction method. Effects of HfO₂ content on their microstructures and electrical properties were systematically studied. A pure perovskite phase was observed in all the ceramics with x=0–0.07 wt%. Adding optimum HfO₂ content can induce dense microstructures and improve their piezoelectric properties, and a high depolarization temperature was also obtained. The ceramics with x=0.03 wt% possess optimum electrical properties (i.e., d₃₃~168 pC/N, k_p~32.1%, Q_m~130, ε_r~715, tan δ~0.026, and T_d~106 °C, showing that HfO₂-modified BNBT ceramics are promising materials for piezoelectric applications.     

Effect of Nb-doping on dielectric, ferroelectric and conduction behaviour of lead free Bi0.5(Na0.5K0.5)0.5TiO3 ceramic

Bi_0.5(Na_0.5K_0.5)_0.5TiO₃ + y wt.% Nb (y = 0-1) piezoelectric ceramics were synthesized by solid state reaction. The effect of varying Nb concentration on various properties of BNKT ceramic has been investigated in detail. The effect of Nb-doping on dielectric and ferroelectric property has been presented. An increase in its depolarization temperature and Curie temperature with Nb concentration was observed. The electrical properties of pure and Nb-doped BNKT ceramic over a wide range of frequencies (20 Hz to 2 MHz) and temperature (30-430 °C) were studied using impedance spectroscopic technique.     

Piezoelectric and dielectric properties of (Bi0.5Na0.5)0.94Ba0.06TiO3–Ba(Zr0.04Ti0.96)O3 lead-free piezoelectric ceramics

Lead-free piezoelectric ceramics of (1 − x)(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃–xBa(Zr_0.04Ti_0.96)O₃ (abbreviated as BNBT–BZT100x, wherein x from 0 to 10 mol%) were fabricated. We have studied effects of amount of BZT content on the electrical properties and microstructures. X-ray diffraction analysis indicates that a solid solution is formed when BZT diffuses into the BNBT lattice, and further the crystal structure of sintered hybrid changes from rhombohedral to tetragonal symmetry along with increasing BZT content. Piezoelectric property measurements reveal that the BNBT–BZT4 ceramics has the highest piezoelectric performance, for example, the piezoelectric constant d₃₃ reaches to 167 pC/N and planar electromechanical coupling factor k_p is up to 0.27. In addition, the effect of Bi₂O₃ on the electrical properties and microstructure of the BNBT–BZT4 ceramics have also been studied, and found that the doping of Bi enhances the piezoelectric properties of ceramics.     

Low-Temperature Sintering of (K0.5Na0.5)NbO3 Piezoelectric Ceramics

(K_0.5Na_0.5)NbO₃ piezoelectric ceramics can be sintered at a temperature as low as 750 °C for 5 h by incorporating Li₂CO₃ + Bi₂O₃ + ZnO as the sintering aid, whereas the conventional sintering temperature is around 1,100 °C. The optimal “soft” piezoelectric properties are obtained for ceramics sintered at 850 °C for 5 h. The dielectric permittivity (ε), piezoelectric coefficient (d ₃₃), electromechanical coupling (k _p) and mechanical quality factors (Q _m) of (K, Na)NbO₃ modified with 5.5 wt% sintering aids are 1,436, 90 pC/N, 0.3 and 10, respectively. These values are similar to the values obtained for (K_0.5Na_0.5)NbO₃ ceramics sintered above 1,100 °C. The underlying mechanism for abrupt change of dielectric permittivity is explained.     

Rheology and physical properties of Bi0.5(Na0.82K0.18)0.5TiO3 piezoelectric thick films by aqueous gel-tape casting process

Piezoelectric Bi_0.5(Na_0.82K_0.18)_0.5TiO₃ thick films were prepared by aqueous gel-tape casting. Bi_0.5(Na_0.82K_0.18)_0.5TiO₃ nano-powder with perovskite structure prepared by sol–gel process was obtained. The average particle size was 200 nm. A stable Bi_0.5(Na_0.82K_0.18)_0.5TiO₃ suspension with 46 vol% solid loading and <1 Pa s viscosity was prepared when 0.8 wt% of ammonium polyacrylate was added with the pH value controlled in the range 7–9. The plasticizer glycerol had a positive effect on the fluidity of the suspensions. The tensile strength and strain to failure of the green tape were 0.42 MPa and 0.04 mm/mm when the addition of glycerol was 50 wt% of the premix solvent. The resulting about 100 μm thick films had relative permittivity of 910, dielectric loss of 4.9% at 10 kHz, remanent polarization of 24 μC/cm², coercive field of 56 kV/cm, and longitudinal effective piezoelectric coefficient d₃₃eff of 102 pC/N. The good performance illustrated that gel-tape casting was the effective way to prepare Bi_0.5(Na_0.82K_0.18)_0.5TiO₃ thick film.     

Preparation and characterization of the lead-free piezoelectric ceramic of Bi0.5Na0.5TiO3 doped with CuO

This study investigates the effects of copper oxide (CuO) addition, calcining temperature, and sintering temperature on the microstructure and the electrical properties (such as dielectric constant and loss tangent) of lead-free piezoelectric ceramic of bismuth sodium titanate (Bi_0.5Na_0.5TiO₃), BNT, which was prepared using the mixed oxide method. Three kinds of starting powders (Bi₂O₃, Na₂CO₃ and TiO₂) were mixed and calcined. This calcined BNT powder and a certain weight percentage of CuO were mixed, calcined, and compressed into a green compact of BNT-CuO. This green compact of BNT-CuO was sintered to be a disk doped with CuO, and its characteristics were measured. In this study, the calcining temperature ranged from 700 to 1000 °C, the sintering temperature ranged from 950 to 1050 °C, and the weight percentages of CuO doping included 2, 4, 6, and 8 wt.%. The largest relative density of the BNT-CuO disk obtained in this study was 96.7% at the calcining temperature of 700 °C, the sintering temperature of 950 °C, and 4 wt.% of CuO addition. The corresponding dielectric constant and loss tangent were 494 and 0.181%, respectively. This study shows that adding CuO to the BNT not only improves the relative density and the dielectric constant of the BNT disk, but it also lowers the sintering temperature.     

Enhanced piezoelectric properties of (K0.40Na0.60)0.94Li0.06Nb0.94SbO3 lead-free ceramics by optimizing the sintering temperature

Effects of sintering temperature on the microstructure and electrical properties of (K_0.40Na_0.60)_0.94Li_0.06Nb_0.94SbO₃ (KNLNS) lead-free ceramics are investigated. The grain size gradually becomes larger with increasing sintering temperature from 1055 °C to 1105 °C, and the piezoelectric property could be enhanced by optimizing their sintering temperature. The ceramic sintered at 1075 °C has optimum electrical properties, i.e., d₃₃~272 pC/N, k_p~43.5%, ε_r~1152, tan δ~0.026, and T_C~346 °C. These results show that the sintering temperature can optimize electrical properties of KNLNS ceramics.     

High performance lead-free Na0.5K0.5NbO3 piezoelectric ceramics obtained via oscillatory hot-pressing

Lead-free Na_0.5K_0.5NbO₃ (KNN) piezoelectric ceramics is regarded as a potential candidate for PZT material, while high performance is difficult to be obtained due to its poor sinterability and non-stoichiometric component. In this work, oscillatory pressure-assisted hot pressing (OPAHP) is utilized to fabricate KNN ceramics with high density. The KNN ceramics sintered at 860 °C exhibits superior performance with piezoelectric parameter (d₃₃) of 142 pC/N, electromechanical coupling factors (k_p) of 0.41, and relative permittivity (ε^T₃₃/ε₀) of 472–620. Additionally, hardness and flexural strength are measured as 3.55 GPa and 99.13 MPa, respectively. This work indicates that OPAHP technique is effective for fabricating KNN piezoelectric ceramics with high performance.     

Effect of Eu doping on structure and electrical properties of lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 ceramics

Eu-doped (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ (BNBT6-xEu, x=0.00–2.00 at%) lead-free piezoelectric ceramics have been synthesized by the solution combustion method. The effect of Eu doping concentration on the phase structure, microstructure and electrical properties of BNBT6 ceramics has been investigated. The XRD analysis confirms that the europium additive incorporates into the BNBT6 lattice and results in a phase transition from the coexistence of rhombohedral and tetragonal phases to a more symmetric pseudocubic phase. The SEM images indicate that the europium additive has little effect on the ceramic microstructure and the average grain size is about 2.0 μm. The electrical properties of BNBT6 ceramics can be improved by appropriate Eu doping. The 0.25 at% Eu doped BNBT6 ceramic presents excellent electrical properties: piezoelectric constant d₃₃=149 pC/N, remnant polarization P_r=40.27 μC/cm², coercive field E_c=2.95 kV/mm, dielectric constant ε_r=1658 and dissipation factor tan δ=0.0557 (10 kHz).     

The effect of pre-milling/pre-synthesis process and excess Ba on the microstructure and dielectric/piezoelectric properties of nano-sized 0.94[(Bi0.5Na0.5)TiO3]–0.06[Ba(1+x)TiO3]

Lead-free piezoelectric ceramic specimens of 0.94[(Bi_0.5Na_0.5)TiO₃]–0.06[Ba_(1+x)TiO₃] (where 0 ≤ x ≤ 0.03) (abbreviated as nano-sized BNBT6(x)) compositions containing excess Ba were synthesized by a modified mixed oxide method. In this modified process (Bi_0.5Na_0.5)TiO₃ and Ba_(1+x)TiO₃ were separately prepared by pre-milling the starting powders in high energy mill (HEM) in order to obtain nano-particle size. BNBT6(x) specimens were also prepared by the conventional process to be compared with the former one. The pre-milling of the raw materials lowered the calcination temperatures of (Bi_0.5Na_0.5)TiO₃ and Ba_(1+x)TiO₃ by 110 and 200 °C, respectively, as compared with the conventional process. High energy milling improved the reaction activity and homogeneity of the materials used throughout the process, enhanced the sintering density and grain uniformity, and decreased the grain size. The effects of excess Ba on the characteristic of nano-sized BNBT6(x) specimens were systematically investigated. The piezoelectric and dielectric properties of BNBT6(x) specimens containing various amounts of excess Ba show maximum values of the planar electromechanical coupling factor (k_p) of 38% and the piezoelectric constant (d₃₃) of 198 pC/N with Ba excess amount of 0.02 mol [BNBT6(0.02)]. The d₃₃ then decreases with increasing excess Ba content to 0.03 mol, whereas the relative dielectric permittivity (K^T₃₃) steadily increases with increasing excess Ba and reaches the maximum value of 785 for this composition. Besides, the depolarization temperature (T_d) slightly decreased within the range of x = 0–0.01 mol and then tends to rapidly decrease with the excess Ba of 0.02 mol. In addition to this, the T_d remains unchanged with the higher excess Ba of 0.03 mol. The modified mixing and milling method were considered to be a new and promising process for lead-free piezoelectric ceramics owing to their excellent piezoelectric/dielectric properties.     

Effects of sintering temperature and poling conditions on the electrical properties of Ba0.70Ca0.30TiO3 diphasic piezoelectric ceramics

The effects of sintering temperature and poling conditions on the electrical properties of tetragonal and orthorhombic diphasic Ba_0.70Ca_0.30TiO₃ (BCT) lead-free ceramics have been systematically investigated. On the one hand, with increasing sintering temperature from 1270 °C to 1400 °C, the bulk density increases monotonically and the Curie temperature keeps almost constant with the value of ∼120 °C, whereas the grain size, the maximum relative dielectric constant, room temperature polarization reach the maximum values for samples sintered at 1340 °C. On the other hand, it is found that the piezoelectric property depends on poling electric field and poling temperature significantly. An enhanced piezoelectric behavior of d₃₃=126 pC/N, k_p=0.29, and Q_m=588 is obtained for the BCT ceramics poled at 100 °C with 30 kV/cm field for 20 min. The aging behavior of the piezoelectric property is also investigated.     

Compositional dependence of phase structure and electrical properties in (K0.50Na0.50)0.97Bi0.01(Nb1−xZrx)O3 lead-free ceramics

(K_0.50Na_0.50)_0.97Bi_0.01(Nb_1-xZr_x)O₃ (KNBNZ) lead-free ceramics were prepared by the conventional solid-state sintering process. Their phase structure is dependent on the Zr content in the investigated range, and the ceramics endure a phase transition from pseudocubic to orthorhombic with increasing Zr content. Improved piezoelectric properties have been observed when the poling temperature is located at ~100 °C because of the coexistence of orthorhombic and tetragonal phases. Their dielectric and piezoelectric properties were enhanced by doping Zr, the ceramic with x=0.02 showing optimal electrical properties, i.e., d₃₃~161 pC/N, k_p~0.41, Q_m~81, T_c~370 °C, and T_o−t~130 °C. These results show that the KNBNZ ceramic is a promising lead-free piezoelectric material.     

High piezoelectric properties of BaTiO3-xLiF ceramics sintered at low temperatures

BaTiO₃-xLiF ceramics were prepared by a conventional sintering method using BaTiO₃ powder about 100 nm in diameter. The effects of LiF content (x) and sintering temperature on density, crystalline structure and electrical properties were investigated. A phase transition from tetragonal to orthorhombic symmetry appeared as sintering temperatures were raised from 1100 °C to 1200 °C or as LiF was added from 0 mol% to 3 mol%. BaTiO₃-6 mol% LiF ceramic sintered at 1000 °C exhibited a high relative density of 95.5%, which was comparable to that for pure BaTiO₃ sintered at 1250 °C. BaTiO₃-4 mol% LiF ceramic sintered at 1100 °C exhibited excellent properties with a piezoelectric constant d₃₃ = 270 pC/N and a planar electromechanical coupling coefficient k_p = 45%, because it is close to the phase transition point in addition to high density.     

Structure and electrical properties of Nd2O3-doped 0.82Bi0.5Na0.5TiO3–0.18Bi0.5K0.5TiO3 ceramics

Nd₂O₃ doped 0.82Bi_0.5Na_0.5TiO₃–0.18Bi_0.5K_0.5TiO₃ (abbreviated to BNKT) binary lead-free piezoelectric ceramics were synthesized by the conventional mixed-oxide method. The results show that the BNKT ceramics with 0–0.15 wt.% Nd₂O₃ doping possesses a single perovskite phase with rhombohedral structure. The grain size of BNKT decreased with the addition of Nd₂O₃ dopant. The temperature dependence of the dielectric constant ?_r revealed that there were two-phase transitions from ferroelectric to anti-ferroelectric and anti-ferroelectric to paraelectric. A diffuse character was proved by linear fitting of the modified Curie–Weiss law. At room temperature, the specimens containing 0.0125 wt.% Nd₂O₃ with homogeneous microstructure presented excellent electrical properties: the piezoelectric constant d₃₃ = 134 pC/N, the electromechanical coupling factor K_p = 0.27, and the dielectric constant ?_r = 925 (1 kHz).     

Effect of SrZrO3 on phase structure and electrical properties of 0.974(K0.5Na0.5)NbO3–0.026Bi0.5K0.5TiO3 lead-free ceramics

(0.974−x)(K_0.5Na_0.5)NbO₃–0.026Bi_0.5K_0.5TiO₃–xSrZrO₃ lead-free piezoelectric ceramics have been prepared by the conventional solid state sintering method. Systematic investigation on the microstructure, crystalline structures as well as electrical properties of the ceramics was carried out. With the addition of SrZrO₃, the rhombohedral–orthorhombic phase transition temperature of the ceramics increases. Both the rhombohedral–orthorhombic and orthorhombic–tetragonal phase transitions of the ceramics were modified to be around room temperature when x~0.05, and as a result remarkably strong piezoelectricity has been obtained in 0.924(K_0.5Na_0.5)NbO₃–0.026Bi_0.5K_0.5TiO₃–0.05SrZrO₃ ternary system, whose piezoelectric parameters were d₃₃=324 pC/N and k_p=41%.