Surface dangling-bond States and band lineups in hydrogen-terminated Si, Ge, and Ge/si nanowires

We report an ab initio study of the electronic properties of surface dangling-bond (SDB) states in hydrogen-terminated Si and Ge nanowires with diameters between 1 and 2 nm, Ge/Si nanowire heterostructures, and Si and Ge (111) surfaces. We find that the charge transition levels epsilon(+/-) of SDB states behave as a common energy reference among Si and Ge wires and Si/Ge heterostructures, at 4.3+/-0.1 eV below the vacuum level. Calculations of epsilon(+/-) for isolated atoms indicate that this nearly constant value is a periodic-table atomic property.     

Sharp corners in the cross section of ultrathin Si nanowires

We have determined stable geometries for pristine Si nanowires grown along their 100 axis through systematic density functional studies. Strikingly, Si nanowires with diameters smaller than 1.7 nm prefer a shape that has a square cross section. This stems from dimerization between corner atoms and also from benign reconstruction patterns that maximally saturate Si dangling bonds.     

1.55μmSi_(1-x)Ge_x光波导与Si_(1-x)Ge_x/Si多量子阱探测器集成的优化设计

对１．５５μｍ波长的Ｓｉ１－ｘＧｅｘ光波导和Ｓｉ１－ｘＧｅｘ／Ｓｉ多量子阱（ＭＱＷ）红外探测器的集成器件结构进行了系统的分析和优化设计。优化结果为：１）对Ｓｉ１－ｘＧｅｘ光波导，Ｇｅ含量ｘ＝０．０５，脊宽、高和腐蚀深度分别为８、３和２．６μｍ；２）对Ｓｉ１－ｘＧｅｘ／Ｓｉ多量子阱红外探测器，Ｇｅ含量ｘ＝０．５，探测器由厚度为５５０ｎｍ、２３个周期的６ｎｍＳｉ０．５Ｇｅ０．５＋１７ｎｍＳｉ组成，长度约２ｍｍ。结果表明，这种结构器件的内量子效率可达８８％。     

Magnetic anisotropy and domain patterns in electrodeposited cobalt nanowires

The magnetic anisotropy and domain structure of electrodeposited cylindrical Co nanowires with length of 10 or 20 μm and diameters ranging from 30 to 450 nm are studied by means of magnetization and magnetic torque measurements, as well as magnetic force microscopy. Experimental results reveal that crystal anisotropy either concurs with shape anisotropy in maintaining the Co magnetization aligned along the wire or favours an orientation of the magnetization perpendicular to the wire, hence competing with shape anisotropy, depending on whether the diameter of the wires is smaller or larger than a critical diameter of 50 nm. This change of crystal anisotropy, originating in changes in the crystallographic structure of Co, is naturally found to strongly modify the zero (or small) field magnetic domain structure in the nanowires. Except for nanowires with parallel-to-wire crystal anisotropy (very small diameters) where single-domain behaviour may occur, the formation of magnetic domains is required to explain the experimental observations. The geometrical restriction imposed on the magnetization by the small lateral size of the wires proves to play an important role in the domain structures formed. Received 14 September 2000     

原子尺度金属纳米线的结构和性质

当物质尺度减少到几层原子时，形成超细的纳米结、纳米线、或者纳米团簇，原有凝聚态物质的结构和物理性质将不再保持，而呈现出许多令人惊奇的奇异特性。本文重点讨论直径大约3nm以下，具有足够长度的、原子结构往往不同于体材料的准一维金属纳米结构，我们称之为原子尺度金属纳米线或超细金属纳米线（也称为金属原子线）。近年来实验上已经制备和表征出在超高真空中悬挂在两个顶针尖端的Au、Pt、Cu等金属纳米线和纳米管，金属线直径达到1nm以下而长度为6nm以上。通过高分辩电子显微镜观察，它们是同轴圆管（或壳）组成的、类似纳米碳管的单壳或多壳结构，管由绕着线轴的螺旋原子绳构成。理论工作围绕这种新奇结构形态的形成机制、奇异的物理性质和可能的应用前景而同时展开。这是一个崭新的纳米世界，无论是对基础的低维物理还是未来分子电子设备的应用，都将产生深远的影响，有许多奇妙的现象正等待人们去发现。本文将对最近几年原子尺度金属纳米线研究工作的主要进展和发展趋势作一个概述，并重点介绍本组有关的具有螺旋结构的纳米线的各类新奇结构和物理性质。     

原子尺度金属纳米线的结构和性质

当物质尺度减少到几层原子时,形成超细的纳米结、纳米线、或者纳米团簇,原有凝聚态物质的结构和物理性质将不再保持,而呈现出许多令人惊奇的奇异特性。本文重点讨论直径大约3 nm以下,具有足够长度的、原子结构往往不同于体材料的准一维金属纳米结构,我们称之为原子尺度金属纳米线或超细金属纳米线(也称为金属原子线)。近年来实验上已经制备和表征出在超高真空中悬挂在两个顶针尖端的Au、Pt、Cu等金属纳米线和纳米管,金属线直径达到1 nm以下而长度为6 nm以上。通过高分辩电子显微镜观察,它们是同轴圆管(或壳)组成的、类似纳米碳管的单壳或多壳结构,管由绕着线轴的螺旋原子绳构成。理论工作围绕这种新奇结构形态的形成机制、奇异的物理性质和可能的应用前景而同时展开。这是一个崭新的纳米世界,无论是对基础的低维物理还是未来分子电子设备的应用,都将产生深远的影响,有许多奇妙的现象正等待人们去发现。本文将对最近几年原子尺度金属纳米线研究工作的主要进展和发展趋势作一个概述,并重点介绍本组有关的具有螺旋结构的纳米线的各类新奇结构和物理性质。     

硅(001)图形衬底上锗硅纳米线的定位生长

纳米线的定位生长是实现纳米线量子器件寻址和集成的前提.结合自上而下的纳米加工和自下而上的自组装技术,通过分子束外延生长方法,在具有周期性凹槽结构的硅(001)图形衬底上首先低温生长硅锗薄膜然后升温退火,实现了有序锗硅纳米线在凹槽中的定位生长,锗硅纳米线的表面晶面为(105)晶面.详细研究了退火温度、硅锗的比例及图形周期对纳米线形成与否,以及纳米线尺寸的影响.     

Characteristics of SiOx nanowires synthesized via the thermal heating of Cu-coated Si substrates

We have demonstrated the growth of SiO_x nanowires by the simple heating of the Cu-coated Si substrates. We have applied X-ray diffraction, scanning electron microscopy and transmission electron microscopy techniques to characterize the structure of the samples. The as-synthesized SiO_x nanowires had amorphous structures with diameters in the range of 20–80 nm. The thickness of the Cu layer affected the resultant sample morphology, favoring the nanowire formation at smaller thickness. Photoluminescence spectra of the nanowires exhibited blue emission. We have proposed the possible growth mechanism.     

Ge(112)-(4×1)-In表面重构的原子结构

用扫描隧道显微镜(STM)研究了亚单层In原子引起的Ge(112)-(4×1)-In表面重构.结合随偏压极性不同而显著不同的STM图象和相应的“原子图象”,为这个重构提出了一个原子结构模型,供进一步研究参考.其中,In原子的吸附位置与它在Si(112)表面的吸附位置一致,但与Al原子和Ga原子在Si(112)表面的吸附位置不同.这个吸附位置的不同主要是由In原子较长的共价键键长引起的 关键词： 表面结构 In Ge 扫描隧道显微镜(STM)     

Surface passivation effects in silicon nanowires

We report first-principles simulation results for the electronic band structure of Si nanowires (SiNWs) aligned along the ?100? and ?110? directions with H, OH, and CH₃ substituents passivating the surfaces. The ?100? wires studied have {110} faces and square cross-sections with diameters up to 1.73 nm, while the ?110? wires have {111} faces and diamond cross-sections with diameters up to 1.46 nm. We found that passivation using OH or CH₃ groups reduced the band gaps compared to H-terminated ?100? SiNWs, and passivation using CH₃ groups produced systems with indirect gaps for all ?100? SiNWs studied. All band gaps were direct in the ?110? SiNWs independent of passivation. The near-gap orbitals are greatly affected by the different substituents. We also found that the carrier effective masses of ?100? SiNWs are sensitive to the diameter and passivation, while those of ?110? SiNWs are not.     

Nanowire formation by coalescence of small gold clusters inside carbon nanotubes

The coalescence of Au₁₃, Au₅₅ and Au₁₄₇ icosahedral clusters encapsulated inside single walled carbon nanotubes (CNTs) of different diameters are investigated using molecular dynamics simulation with semi-empirical potentials. Three steps needed for the formation of encapsulated nanowires are followed in detail, namely, the penetration of clusters in CNTs, the coalescence between two clusters inside CNTs and their accumulation to form wires. It is suggested that no significant energy barrier is encountered during the penetration of free clusters into CNTs provided the CNT radius is large enough, that is, about 0.3 nm larger than the cluster radius. The relative orientation of clusters imposed by the CNT favors their spontaneous coalescence. After coalescence of two clusters, the Au atoms are rearranged to form new structures of cylindrical symmetry that may be seven fold, six fold, five fold, helical or fcc depending on the CNT diameter. The thermal stability of these structures is discussed and the structural properties of nanowires formed by accumulation of many clusters in CNTs are analyzed in detail. A geometrical method is presented which allows the prediction of the structure of multi-shell helical wires, when knowing only the CNT radius. These modeling results suggest the possibility of synthesizing metallic nanowires with controlled diameter and structure by embedding clusters into nanotubes with suitable diameters.     

Resistance,magnetoresistance, and thermopower of zinc nanowire composites

We report a very large enhancement of the thermopower of 4 nm diameter metallic Zn nanowires, with a temperature dependence that is consistent with that of their electrical resistivity and the Mott formula. The temperature dependence of the resistance, magnetoresistance, and thermopower of composites consisting of 15, 9, and 4 nm diameter Zn nanowires imbedded in porous host materials is reported. The 15 nm wires are metallic. The smaller wires show 1D weak localization, but the electrical resistivity mostly follows a T(-1/2) law, and the thermopower of the 4 nm wires saturates at -130 microV/K.     

Nanowires and nanorings at the atomic level

The step-flow growth mode is used to fabricate Si and Ge nanowires with a width of 3.5 nm and a thickness of one atomic layer (0.3 nm) by self-assembly. Alternating deposition of Ge and Si results in the formation of a nanowire superlattice covering the whole surface. One atomic layer of Bi terminating the surface is used to distinguish between the elements Si and Ge. A difference in apparent height is measured in scanning tunneling microscopy images for Si and Ge. Also, different kinds of two-dimensional Si/Ge nanostructures like alternating Si and Ge nanorings having a width of 5-10 nm were grown.     

量子局域效应和应力对GaSb纳米线电子结构影响的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法, 研究了不同晶体结构和尺寸的GaSb纳米线能带结构特性和载流子的有效质量, 以及单轴应力对GaSb纳米线能带结构的调控. 研究结果表明: 闪锌矿结构[111]方向和纤锌矿结构[0001]方向的小尺寸GaSb纳米线均出现间接带隙的能带结构, 并可通过单轴应力来实现纳米线能带结构由间接带隙到直接带隙的转变, 其中, 闪锌矿结构[111]方向GaSb纳米线仅在受到单轴拉伸应力时才发生能带由间接带隙到直接带隙的转变, 而纤锌矿结构[0001]方向GaSb纳米线无论受单轴拉伸还是压缩应力的作用均可实现能带由间接带隙到直接带隙的转变; [111]和[0001]方向GaSb纳米线的带隙和载流子有效质量与纳米线直径呈非线性关系, 并随纳米线直径的减小而增大; 同一方向和尺寸的GaSb纳米线, 其空穴有效质量要小于电子有效质量, 这表明小尺寸GaSb纳米线有利于空穴载流子输运.     

Synthesis of gold nanowires with controlled crystallographic characteristics

The controlled fabrication of poly- and single-crystalline Au nanowires is reported. In polycarbonate templates, prepared by heavy-ion irradiation and subsequent etching, Au nanowires with diameters down to 25 nm are electrochemically synthesized. Four-circle X-ray diffraction and transmission electron microscopy measurements demonstrate that wires deposited potentiostatically at a voltage of -1.2 V at 65 °C are single-crystalline and oriented along the [110] direction. By reverse-pulse electrodeposition, wires oriented along the [100] direction are grown. The wires are cylindrical over their whole length. The morphology of the caps growing on top of poly- and single-crystalline wires is a strong indication of the particular crystalline structure of the nanowires. PACS 61.46.-w; 81.07.-b     

Quantum confinement and surface-state effects in bismuth nanowires

Bulk bismuth is an efficient thermoelectric material. Assuming intrinsic conditions, the theory of quantum confinement of bismuth nanowires by Hicks and Dresselhaus predicts a semimetal-to-semiconductor transformation for critical diameters of around 50 nm. For nanowires of diameters below the critical diameter, electronic states can be considered to be one dimensional and therefore the thermopower can be very large. However, angle-resolved photoemission spectroscopy (ARPES) studies of Bi planar surfaces present direct evidence of heavy mass surface states that can inhibit the semimetal-to-semiconductor transformation. We present a study of the Fermi surface of Bi nanowires of diameters ranging between 200 and 30 nm employing the Shubnikov–de Haas method. Our results can be understood in terms of the model of surface states. For 30 nm nanowires we find that the Fermi surface is spherical, that the carriers have high effective mass, and that the number of carriers corresponds to that inferred from ARPES measurements.     

Nature of the band gap of silicon and germanium nanowires

Nanowires of both Si and Ge have been predicted to have band gaps that are either direct or indirect depending upon the crystallographic direction along which the nanowire is oriented. We use a sp³d⁵s^* tight binding model to calculate the band structures for both Ge and Si nanowires oriented along the (1 0 0), (1 1 0) and (1 1 1) directions. We show that the nature of the band gap and the variation of the zone centre band gap with nanowire width depends upon the nanowire stacking direction for both Si and Ge nanowires. We then show, by considering bulk unit cells along the (1 0 0), (1 1 0) and (1 1 1) directions, that it is possible to accurately predict whether a nanowire stacked in the same direction as one of these bulk unit cells has a direct or indirect band structure.     

Tb掺杂Si纳米线的光致发光特性

以金属Au-Al为催化剂,在温度为1 100 ℃,N₂气流量为1 500 sccm、生长时间为30 min,从Si(100)衬底上直接生长了直径约为50～120 nm、长度为数百纳米的高密度、大面积的Si纳米线。然后,利用Tb₂O₃在不同温度(1 000～1 200 ℃)、掺杂时间(30～90 min)和N₂气流量(0～1 000 sccm)等工艺条件下对Si纳米线进行了Tb掺杂。最后,对Si(100)衬底进行了Tb掺杂对比。室温下,利用荧光分光光度计(Hitachi F-4600) 测试了Tb掺杂Si纳米线的光致发光特性。实验研究了不同掺杂工艺参数(温度、时间和N₂气流量)对Tb3+绿光发射的影响。根据Tb3+能级结构和跃迁特性对样品的发射光谱进行了分析。结果表明,在温度为1 100 ℃,N₂气流量为1 500 sccm、时间为30 min等条件下制备的Si纳米线为掺杂基质,Tb掺杂温度为1 100 ℃,N₂气流量为1 000 sccm、光激发波长为243 nm时,获得了最强荧光发射,其波长为554 nm(5D₄→7F₅),同时还出现强度相对较弱的494 nm(5D₄→7F₆),593 nm(5D₄→7F₄)和628 nm(5D₄→7F₃)三条谱带。Tb掺杂的体Si衬底在波长554 nm处仅有极其微弱的光致发光峰。     

Room temperature facile synthesis of CuO nanostructures by resistive heating

CuO porous layer and nanowires were in situ grown on Cu wires by a very simple catalyst-free thermal oxidation process based on resistive heating of pure metal wires at ambient conditions. The morphological, compositional and structural characterization of the obtained samples revealed that the nanowires are monoclinic single and bi-crystalline structures with mean diameters of 90–300 nm and typical length in the range 1–5 μm. The effects of the applied voltage values and treatment time on the morphology of the metal substrate and on the size of the nanowires were investigated. Different from the vapor–solid (V–S) mechanism, the growth of nanowires is found to be based on the Cu ion diffusion.     

Band structure of silicon and germanium thin films based on first principles

In nanomaterials, optical anisotropies reveal a fundamental relationship between structural and optical properties, in which directional optical properties can be exploited to enhance the performance of optoelectronic devices. First principles calculation based on density functional theory(DFT) with the generalized gradient approximation(GGA) are carried out to investigate the energy band gap structure on silicon(Si) and germanium(Ge) nanofilms. Simulation results show that the band gaps in Si(100) and Ge(111) nanofilms become the direct-gap structure in the thickness range less than 7.64 nm and7.25 nm respectively, but the band gaps of Si(111) and Ge(110) nanofilms still keep in an indirect-gap structure and are independent on film thickness, and the band gaps of Si(110) and Ge(100) nanofilms could be transferred into the direct-gap structure in nanofilms with smaller thickness. It is amazing that the band gaps of Si~((1-x)/2)Ge~xSi~((1-x)/2)sandwich structure become the direct-gap structure in a certain area whether(111) or(100) surface. The band structure change of Si and Ge thin films in three orientations is not the same and the physical mechanism is very interesting, where the changes of the band gaps on the Si and Ge nanofilms follow the quantum confinement effects.