纳米ZnO薄膜的制备及其可见光催化降解甲基橙

采用溶胶-凝胶方法制备ZnO透明溶胶, 在铝箔上涂膜后经500 ℃处理制得具有可见光响应的纳米ZnO薄膜光催化剂. 以甲基橙模拟有机污染物, 在可见光下研究了薄膜的降解性能, 结果表明, 用一片有效面积为200 cm2的ZnO/Al薄膜作为催化剂, 甲基橙的降解率达到96.3％, 比ZnO负载在玻璃上制得的ZnO/glass薄膜催化剂活性高得多. 采用扫描电镜与原子力显微镜对ZnO/Al薄膜制备条件进行了表征, 结果发现多孔ZnO/Al薄膜比致密ZnO/Al薄膜具有更高的活性, 实验制备的具有高活性的ZnO/Al薄膜颗粒平均直径为52.2 nm. 采用本方法制备的ZnO/Al薄膜是一种具有应用前景的, 能在可见光下降解有机物的有效光催化剂.     

旋涂水溶液前驱体制备氧化锌薄膜及其性质

通过旋涂法, 采用Zn(OAc)2·2H2O和聚环氧乙烷(PEO)的水溶液为前驱体在不同的热处理温度下制备了ZnO薄膜. PEO的加入增加了溶液的成膜性, 其较低的热分解温度有利于制得纯净的ZnO薄膜. 文中考察了在不同热处理温度下制备的ZnO薄膜的形貌、结晶性、带隙(Eg)以及电导性. 原子力显微镜(AFM)测试表明在热处理温度为400、450和500 ℃制备的ZnO薄膜的粗糙度均方根值分别为3.3、2.7和3.6 nm. 采用透射电子显微镜(TEM)测试发现ZnO薄膜中含有大量纳晶粒子. 通过测试ZnO薄膜的UV-Vis吸收光谱, 根据薄膜位于373 nm处的吸收带边计算得到ZnO的带隙为3.3 eV. 通过对薄膜的电流-电压(I-V)曲线的测试计算得到在热处理温度为400、450和500 ℃制备的ZnO薄膜的电阻率分别为3.3×109、2.7×109和6.6×109 Ω·cm. 450 ℃时制备的ZnO薄膜的电阻率最小, 主要是由于较高的热处理温度有利于提高薄膜的纯度、密度和吸附氧. 而纯度较高、密度较大的薄膜电阻率比较小; 吸附氧含量增加, 晶界势垒增大, 电阻率增大. 因此在纯度和吸附氧的双重作用下450 ℃时制备的ZnO薄膜的电阻率最小, 而500 ℃时制备的ZnO薄膜的电阻率最大.     

气相沉积法制备多孔ZnO薄膜及其光伏特性

通过气相沉积法, 在大气环境下退火, 制备了多孔ZnO薄膜. 这种多孔ZnO薄膜的制备方法具有成膜过程简单且工艺可精确控制等特点. 将多孔ZnO薄膜用胶体CdSe量子点来敏化获得太阳能电池, 具有1.01%的能量转换效率.     

电沉积法制备固态染料敏化太阳能电池

本文采用一步电化学沉积的方法在导电玻璃上先后沉积了ZnO/染料复合薄膜以及CuSCN薄层,实现仅以电沉积法制备结构为ZnO/染料/CuSCN的固态染料敏化太阳能电池,电池的光电转换效率达到0.1%.在电沉积CuSCN前,脱附电沉积制备的ZnO/染料复合薄膜中的染料以形成多孔ZnO薄膜,然后通过染料再吸附得到染料敏化ZnO纳晶多孔薄膜.在电沉积过程中,ZnO和CuSCN的晶体尺寸、晶体取向和膜层形貌都可以进行比较精准的控制.探讨了影响沉积薄膜形貌和光电转换效率的因素,如旋转圆盘电极的旋转速度、电沉积温度以及染料敏化剂的选择.本文报道的低温电沉积制备全固态太阳能电池的方法为制备柔性染料敏化太阳能电池提供了一种新的思路.     

衬底温度对ZnO薄膜生长过程和微结构的影响

从原子尺度上去研究薄膜生长过程中温度对薄膜取向性、缺陷结构以及薄膜完整性的影响和作用规律, 对于解释薄膜生长的物理本质、控制生长条件、提高薄膜制备的质量具有重要意义. 本文应用基于反应力场的分子动力学方法研究了ZnO薄膜(000l)表面作为衬底的薄膜沉积生长过程, 初步讨论了衬底温度(200、500和800 K)变化对沉积较薄ZnO膜质量的影响, 部分结果与实验观察相符. 结果表明, 衬底温度在500 K左右时, 沉积原子结构径向分布函数曲线特征峰尖锐、明显, 有序度较高, 注入和溅射对薄膜完整性影响较小, 沉积形成的薄膜结构稳定而又致密. 在预置衬底表面平坦的情况下薄膜呈现一种链岛状的生长模式, 每原子层均具有两种生长取向, 导致其生长前锋交汇处形成了一种新的有序缺陷.     

TiO2/ZnO薄膜电极中光生电子的传输及其在太阳电池中的应用

制备了TiO2纳米颗粒和ZnO纳米棒混合的多孔薄膜电极, 利用瞬态光电压技术研究了染料敏化TiO2/ZnO薄膜中光生载流子的传输特性. 实验结果表明, ZnO纳米棒增加了薄膜中自由电子扩散速率, 减小了复合几率, 改善了能量转换效率.     

化学溶液沉积法制备单分散氧化锌纳米棒阵列

在由溶胶凝胶法制备的纳米ZnO薄膜基底上, 采用化学溶液沉积法制备了单分散、高度取向的ZnO纳米棒阵列膜. 通过控制纳米ZnO薄膜的制备工艺, 可以调节氧化锌纳米棒的直径. 利用FESEM, TEM, HRTEM, SAED和XRD表征了氧化锌纳米棒阵列的形貌和晶体结构. ZnO纳米棒的室温PL谱具有很高的紫外带边发射峰, 在可见光波段无发射峰, 表明该方法制备的ZnO纳米棒晶体结构完整, 晶体中O空位的浓度很低.     

溅射功率对氧化锡薄膜结构和电化学性能的影响

应用射频磁控溅射技术在硅基底上制备氧化锡薄膜,着重研究溅射功率对薄膜结构和电化学性能的影响.XRD,SEM分析及恒电流充放电测试表明,随着溅射功率的增大,薄膜的结晶程度提高;生长速率和晶粒尺寸增大;电池的贮锂容量减少,且首圈不可逆容量损失增大.溅射功率对薄膜的电化学性能有较大的影响.     

直流磁控溅射工艺对SmCo薄膜的影响

采用不同的直流磁控溅射工艺, 制备了SmCo薄膜.分别用能谱(EDAX)和俄歇谱仪(ASE)对薄膜的平均成份和表面到内部成份分布进行了分析, 用振动样品磁强计(VSM)分析了薄膜的磁性能, 用原子力显微镜(ATM)分析了溅射薄膜的表面颗粒形貌.结果表明, 溅射工艺因素对薄膜的成份和磁性能有较大的影响.     

ZnO及其含锌混合氧化物薄膜的充放电性能研究

从充放电性能、晶体结构等方面考察了包括粉末状的ZnO、脉冲激光沉积方法制备的ZnO薄膜和含锌混合氧化物薄膜的电化学性质.结果表明,ZnO粉末制备的电极的嵌入容量随退火温度的升高而增大,掺入其他氧化物可以明显改善ZnO薄膜的电化学性能,在Ar气氛中,基片温度为400℃时,沉积的靶子成分为Zn:B:P:Al=1:1:0.5:0.5(摩尔比)的含锌混合氧化物薄膜具有较高的可逆容量,且循环性能良好.     

氧偏压对ZnO薄膜结构的影响

采用磁控溅射方法在ITO玻璃上成功制备了具有良好c轴取向的ZnO薄膜．并研究了氧偏压对ZnO薄膜结构的影响、研究发现：当氧偏压为60％时,薄膜的结晶性最好．当氧偏压继续升高时将导致薄膜的结晶性变差,晶粒尺寸变小,晶界增多,薄膜表面粗糙度增加,对光的散射和吸收作用增强,从而导致光的透过率降低．     

磁控溅射制备择优取向氮化铝薄膜

AlN薄膜;磁控反应溅射;磁控溅射制备择优取向氮化铝薄膜;晶面取向;X射线衍射     

Hybrid ZnO/polymer thin films prepared by RF magnetron sputtering

Zinc oxide/poly(acrylic acid) (ZnO/PAA) multilayered hybrid films with different layer thicknesses were prepared by radio frequency magnetron sputtering. Zinc peroxide was used as precursor materials for the preparation of ZnO layers, since the zinc peroxide decomposes to ZnO during the film deposition. The films have a high transmittance in the visible region and exhibit visible photoluminescence emission. The band gap energy of the films—determined by the Tauc relationship—decreases with increasing layer thickness (3.40–3.36 eV) due to the increasing crystalline size of the ZnO particles. The morphological investigations showed that a real layered hybrid film structure formed.     

100 keV H+ ion irradiation of as‐deposited Al‐doped ZnO thin films: An interest in tailoring surface morphology for sensor applications

We report the influence of 100 keV H⁺ ion beam irradiation on the surface morphology, crystalline structure, and transport properties of as‐deposited Al‐doped ZnO (Al:ZnO) thin films. The films were deposited on silicon (Si) substrate by using DC sputtering technique. The ion irradiation was carried out at various fluences ranging from 1.0 × 10¹² to 3.0 × 10¹⁴ ions/cm². The virgin and ion‐irradiated films were characterized by X‐ray diffraction, Raman spectroscopy, atomic force microscopy, and Hall probe measurements. Using X‐ray diffraction spectra, 5 points Williamson‐Hall plots were drawn to deduce the crystallite site and strain in Al:ZnO films. The analysis of the measurements shows that the films are almost radiation resistant in the structural deformation under chosen irradiation conditions. With beam irradiation, the transport properties of the films are also preserved (do not vary orders of magnitude). However, the surface roughness and the crystallite size, which are crucial parameters of the ZnO film as a gas sensor, are at variation with the ion fluence. As ion fluence increases, the root‐mean‐square surface roughness oscillates and the surface undergoes for smoothening with irradiation at chosen highest fluence. The crystallite size decreases initially, increases for intermediate fluences, and drops almost to the value of the pristine film at highest fluence. In the paper, these interesting experimental results are discussed in correlations with ion‐matter interactions especially energy losses by the ion beam in the material.     

基片温度对LiCoO2薄膜结构与电化学性能的影响

采用射频(RF)磁控溅射技术制备了用于全固态薄膜锂电池的非晶态和多晶LiCoO2阴极薄膜,利用XRD和SEM研究了沉积温度对LiCoO2薄膜结构和形貌的影响,并研究了高温退火后薄膜的电化学性能.研究结果表明,随著基片温度的不同,薄膜成分、表面形貌以及电化学行为有明显差异.室温沉积的薄膜很难消除薄膜中Li2CO3的影响,经过高温退火处理后也无法形成有效的多晶LiCoO2薄膜,而150℃沉积的薄膜经过高温退火后形成了有利于锂离子嵌入的多晶LiCoO2结构,薄膜显示出了较好的电化学性能.     

磁控溅射制备的铜钒氧化物薄膜及其电化学性能

采用射频磁控溅射技术在硅基底上分别制备了无掺杂和掺杂Cu的氧化钒薄膜. X射线衍射(XRD)分析和扫描电子显微镜(SEM)观察表明, 无掺杂的薄膜为多晶V2O5, 掺杂Cu的薄膜为非晶态. X射线光电子能谱(XPS)分析结果表明, 掺杂Cu的薄膜为铜钒氧化物膜, 其中Cu离子表现为+2价, V离子为+4与+5价的混合价态. 随着Cu掺杂量的增大, +4价V的含量增加. 电化学测试结果表明, V2O5薄膜在掺杂Cu以后其放电容量有显著的提高, 其中Cu2.1VO4.4薄膜在100次循环后容量还保持为83.4 μA·h·cm-2·μm-1, 表现出较高的放电容量和较好的循环性能.     

Photoinduced hydrophilicity of heteroepitaxially grown ZnO thin films

Single crystalline ZnO thin films were heteroepitaxially grown on sapphire substrates by rf-magnetron sputtering. The ZnO films on sapphire A and C face were oriented along the (0001) direction, whereas the ZnO film on sapphire R face was oriented along the (11-20) direction. The rate of photoinduced hydrophilic conversion strongly depended on the surface crystal structure. The ZnO film oriented along the (11-20) direction exhibited a higher hydrophilicizing rate than those oriented along the (0001) direction. The high hydrophilicizing rate of the ZnO oriented along the (11-20) direction is due to its surface atomic arrangement. The outermost layer of the ZnO surface of the (11-20) face contains oxygen ions, which are considered to be energetically reactive sites and responsible for the hydrophilic conversion.     

Electrochromic properties of sputtered TiO2 thin films

TiO₂ thin films were deposited on ITO/Glass substrates by the rf magnetron sputtering in this study. The electrochromic properties of TiO₂ films were investigated using cyclic voltammograms (CV), which were carried out on TiO₂ films immersed in an electrolyte of 1 M LiClO₄ in propylene carbonate (PC). As- deposited TiO₂ thin film was amorphous, while the films post-annealed at 300~600°C contained crystallized anatase and rutile. With the increase of the annealing temperature, the surface roughness of film increased from 1.232 nm to 1.950 nm. Experimental results reveal that the processing parameters of TiO₂ thin films will influence the electrochromic properties such as transmittance, ion-storage capacity, inserted charge, optical density change, coloration efficiency and insertion coefficient.     

Influence of rapid thermal annealing on structure and interfacial characteristic of ZnO thin films

Highly C‐axis oriented ZnO thin film was manufactured by radio‐frequency magnetron sputtering technique on Si (111) substrate. The main objective was to study the influence of rapid thermal annealing (RTA) temperature on the structure and interfacial characteristic of ZnO thin films. X‐ray diffraction results showed that the ZnO thin films annealed at 600 °C by RTA technique had a perfect C‐axis preferred orientation compared to the other ZnO thin films, and the full width at half maximum of ZnO (002) rocking curve measurements indicted that the RTA‐annealed ZnO thin films possessed better crystal structure. Atom force microscopy displayed that the grain size of RTA‐annealed ZnO thin films was fine and uniform compared with the as‐deposited ZnO thin films, although the grains grew in RTA process and the root meant square roughness was smaller than that of as‐deposited films. High‐resolution transmission electron microscopy showed that there was an obvious amorphous layer between ZnO thin films and Si substrate, but the RTA‐annealed ZnO thin films exhibited larger and denser columnar structure and a preferred orientation with highly c axis perpendicular to the amorphous layer. Copyright © 2012 John Wiley & Sons, Ltd.     

一种在室温合成具有宽带隙CdS的简单方法

采用简单的磁控溅射方法, 在室温合成了CdS多晶薄膜. 在溅射CdS多晶薄膜过程中, 分别在Ar 气中通入0%、0.88%、1.78%、2.58%和3.40% (体积分数, φ)的O₂, 得到不同O含量的CdS多晶薄膜. 通过X射线衍射仪、拉曼光谱仪、扫描电子显微镜、X射线光电子能谱仪、紫外-可见光谱仪对得到的CdS多晶薄膜进行表征.分析结果表明: O的掺入能得到结合更加致密, 晶粒尺寸更小的CdS多晶薄膜; 与溅射气体中没有O₂时制备的CdS多晶薄膜的光学带隙(2.48 eV)相比, 当溅射气体中O₂的含量为0.88%和1.78% (φ)时, 制备得到的CdS多晶薄膜具有更大的光学带隙, 分别为2.60和2.65 eV; 而当溅射气体中O₂的含量为2.58%和3.40% (φ)时, 得到的CdS光学带隙分别为2.50 和2.49 eV, 与没有掺杂O的CdS的光学带隙(2.48 eV)相当; 当溅射气体中O₂的含量为0.88% (φ)时, 制备的CdS多晶薄膜具有最好的结晶质量. 通过磁控溅射方法, 在溅射气体中O₂含量为0.88% (φ)条件下制备的CdS多晶薄膜表面沉积了CdTe 多晶薄膜并在CdCl₂气氛中进行了高温退火处理, 对退火前后的CdTe多晶薄膜进行了表征. 表征结果显示: CdS中掺入O能得到结合更紧密、退火后晶粒尺寸更大的CdTe多晶薄膜. 通过磁控溅射方法, 在CdS制备过程中于Ar 中掺入O₂, 在室温就能得到具有更大光学带隙的CdS多晶薄膜, 该方法是一种简单和有效的方法, 非常适用于大规模工业化生产.