Vibrational, giant dielectric and AC conductivity properties of agglomerated CuO nanostructures

We report frequency, temperature dependent dielectric response and AC conductivity of nanocrystalline CuO. These nanoparticles were prepared using sol–gel technique. Prepared particles were made as a pellet using hydraulic pressure and thermally heat treated at 950 °C. X-ray diffraction study showed that the prepared particles were crystalline in nature. Fourier transform infrared (FTIR) studies confirm the presence of Cu–O bond. Force constant and bond length is calculated which are 2.17 N cm^?1 and 1.98 Å respectively. Frequency dependent dielectric studies were done at different temperatures. Measurements show the giant dielectric value (~10³) and it increases with increase of temperature. AC conductivity measurements reveal that the conduction depends on both frequency and temperature, this agrees well with Correlated Barrier Hopping model.     

Study of ac electrical conductivity and dielectric properties of ortho-hydroxy acetophenone azine thin films

AC electrical conductivity measurements were carried out in the temperature range 290–473 K over the frequency range 0.1–20 kHz of vacuum deposited Ortho-hydroxy acetophenone azine films. It was found that the ac electrical conductivity increases with frequency according to the relation σ_ac(ω) = A ω^s. The values of the dielectric constant, , slightly changed in higher frequencies irrespective of temperature change, whereas its value increases in higher temperature with the decrease in frequency. Also, the dielectric loss, ɛ′′, and tan δ, has been found to increase with raise in temperature and decrease in frequency. The obtained experimental data has been analyzed with reference to various theoretical models. The analysis shows that the correlated barrier hopping (CBH) model is the most appropriate mechanism for the ac electrical conduction in these films.     

Gd3＋掺杂对Sr2FeMoO6结构及电磁性能的影响

采用微波固相烧结法合成了双钙钛矿Sr2-xGdxFeMoO6（x=0.0、0.1、0.2、0.3）。用XRD和VSM对样品的物相结构和电磁性能进行了研究。结果表明所得Sr2FeMoO6为四方晶系结构,空间群为I4/mmm,随Gd3＋掺杂量的增加,Fe、Mo排列的有序度逐渐降低,同时伴有少量Gd2O3杂相生成。样品Sr2-xGdxFeMoO6均表现为铁磁性,磁转变温度均高于室温,Gd3＋掺杂使得样品的室温饱和磁化强度降低,但适量Gd3＋的掺杂（x=0.3）可明显提高样品的室温磁电阻变化率。样品Sr2-xGdxFeMoO6均呈现典型的半导体行为,当x=0.0、0.1、0.2时,在100～300K,其电输运行为服从小极化子变程跃迁导电机制;当x=0.3时,在150～300K,服从小极化子变程跃迁导电机制;在100～150K,则属于绝热小极化子导电机制。     

Synthesis, structure and dielectric properties of a rare earth double perovskite oxide Ba2CeTaO6

A rare earth double perovskite oxide barium cerium tantalate, Ba₂CeTaO₆ (BCT) is synthesized by solid-state reaction. The X-ray diffraction pattern of the sample at room temperature (25 °C) shows monoclinic structure, with the lattice parameters, a = 9.78 Å, b = 9.02 Å and c = 4.27 Å and β = 93.8°. A scanning electron micrograph shows the formation of grains with average size ∼ 2 μm. Impedance spectroscopy is applied to investigate the ac electrical properties of BCT in a temperature range from 303 to 673 K and in a frequency range from 100 Hz to 1 MHz. Complex-impedance-plane plots show grain contribution for BCT. The frequency-dependent electrical data are analyzed in the framework of the conductivity and modulus formalisms. The frequency-dependent conductivity spectra follow a power law. The conductivity at 110 Hz varies from 3.5 × 10⁻⁷ S m⁻¹ to 1.2 × 10⁻² S m⁻¹ with increasing temperature from 303 to 673 K, respectively. The scaling behaviour of M″ and Z″ suggest that the relaxation describes the same mechanism at various temperatures.     

X-ray and electrical conductivity studies on iron-aluminium mixed oxides

Co-precipitated iron-aluminium mixed oxide cataiysts containing 0 to 100 mol % alumina have been studied by X-ray diffraction and electrical conductivity measurements. Formation of solid solution has been observed. At lower concentrations, aluminium ions occupy the interstitial sites while at higher alumina contents, it forms a substitutional solid solution. Electrical conductivity of the specimens has been measured in air and nitrogen atmospheres in the temperature range room temperature to 400° C. The influence of moisture is found to be significant and it increases with increasing alumina content. A straight line relationship exists between log and 1/Tfor all the specimens. The activation energies for conduction in air and nitrogen are observed to be in the range 0.25 to 0.35 and 0.24 to 0.29 eV, respectively. Electron holes are found to be responsible for electrical conduction in these materials.     

磁场对Ni/硅橡胶复合材料交流电导率及介电性质的影响

采用硅橡胶（110型）与金属（镍粉）按质量比为1∶2.7进行配料, 应用室温二次固化合成Ni/硅橡胶压敏复合材料样品。室温下测量了样品的压阻效应, 比较了外加0.024 T磁场前后样品的介电性质。结果表明, 当压强从3.75kPa到312.5kPa时, 样品直流电阻率下降了8个数量级。与加磁场前相比, 0.024T的磁场使得低频(40~104Hz)交流电导率提高了2.46倍, 介电常数提高了20%, 介电损耗提高了2倍, 这主要是由复合材料中铁磁绝缘体铁磁颗粒膜的隧道磁电阻效应以及磁电耦合引起的。撤去磁场后交流电导率、介电常数和介电损耗均不能回到加磁场前的初始值, 这与Ni粉的铁磁性有关。Ni/硅橡胶压敏复合材料的压阻、 磁电阻效应及磁电耦合等物理性质在磁传感器件、 信息储存等领域有潜在的应用价值。      

The dielectric properties and dielectric mechanism of perovskite ceramic CLST/PTFE composites

Polytetrafluorethylene (PTFE) composites filled with perovskite (Ca,Li,Sm)TiO₃ (CLST) dielectric ceramic of various volume fractions filler up to 60% were prepared. The effects of volume fraction of ceramic filler on the microstructure and dielectric properties of the composites have been investigated. A comparative study of dielectric properties of experiment and modeling analysis has been carried out at high frequencies for the CLST/PTFE composites. The results indicate that both the dielectric constant and the dielectric loss increase with the filler. The CLST/PTFE composite with 40% ceramic has exhibited good dielectric properties: ε _r?=?7.92 (~10 GHz), tan δ?=?1.2?×?10^?3 (~10 GHz), and τ _f?=??45 ppm/°C. The dielectric properties are obviously better than most composites reported previously at high frequencies in the aspects of dielectric loss and thermal stability. The dielectric constant and dielectric loss of composites predicted by the Rother–Lichtenecker equation and the general mixing model are in good agreement with the experiment data when the volume fraction of ceramic is less than 40%. When the volume fraction of the ceramic is more than 40%, the deviation occurs. By introducing the correction factor, the theoretical values of the dielectric constant agrees well with the experimental values.     

AC conductivity and dielectric properties of Sb2Te3 thin films

Sb₂Te₃ films of different thicknesses, in the thickness range 300-620 nm, were prepared by thermal evaporation. X-ray analysis showed that the as-deposited Sb₂Te₃ films are amorphous while the source powder and annealed films showed a polycrystalline nature. The AC conductivity and dielectric properties of Sb₂Te₃ films have been investigated in the frequency range 0.4-100 kHz and temperature range 303-373 K. The AC conductivity σ_AC(ω) was found to obey the power law ω^s where s?1 independent of film thickness. The temperature dependence of both AC conductivity and the exponent s can be reasonably well interpreted by the correlated barrier hopping (CBH) model. The experimental results of the dielectric constant ε₁ and the dielectric loss ε₂ are frequency and temperature dependent and thickness independent. The maximum barrier height W_M calculated from dielectric measurements according to the Guintini equation agrees with that proposed by the theory of hopping of charge carriers over a potential barrier as suggested by Elliott for chalcogenide glasses. The effect of annealing at different temperatures on the AC conductivity and dielectric properties was also investigated. Values of σ_AC, ε₁ and ε₂ were found to increase with annealing treatment due to the increase of the degree of ordering of the investigated films. The Cole-Cole plots for the as-deposited and annealed Sb₂Te₃ films have been used to determined the molecular relaxation time τ. The temperature dependence of τ indicates a thermally activated process.     

Electrical conductivity of platinum metal — nonplatium metal double oxides

The authors have determined an electrical conductivity type for 145 platinum metal-nonplatinum metal double oxides such as Ln₂M₂O₇ pyrochlores, AMO₃ perovskites, ARh₂O₄ spinels, Rh MO₄ rutiles, M_xPd₃O₄ and M_xPt₃O₄ bronzes, etc. It was shown that conductivity type is a certain function of the d-electron configuration of platinum metal ion in the double oxide, namely the double oxide with d⁴ or d⁵ electron configuration for platinum metal ion exhibits metallic conductivity while the oxide with d⁶ or d⁸ electron configuration for the ion is a semiconductor.     

Optical and transport properties of new double perovskite oxide

The ceramic material (Pb_1.5Ba_0.5BiVO₆) is prepared through usual solid state method. Its structural and transport properties are explored and a number of interesting results are found from the X-ray diffraction (XRD), scanning electron microscope (SEM), Energy dispersive X-ray spectroscopy (EDS), complex impedance spectroscopy (CIS). In Pb₂BiVO₆ the substation of ‘Ba’ at A-site also has a double perovskite structure but there is an enormous changes in its micro-structure and cell parameters. In the studied compound high emphasis has been focused on the structure, grain distribution, optical and transport properties. The room temperature XRD, SEM and FTIR study suggests that the compound is single phase new compound, uniform distribution of grains and well separated grain boundaries. SEM micrograph also suggests that the charge carriers could easily finds their path to increase the leakage current and material may to be lossy. The optical band gap of the studied compound has been calculated from UV–Vis spectroscopy analysis and the material can be useful for photovoltaic devices. The absence of any unwanted particles is shown from EDS analysis. CIS analysis of the compound suggest that the transport properties in the material are due to short range mobility as well as hopping type motion.     

Electrical and dielectric properties of bismuth holmium cobalt titanate (BiHoCoTiO<Subscript>6</Subscript>): a complex double perovskite

A lead-free bismuth holmium cobalt titanate multiferroic(BiHoCoTiO₆) was synthesized at high temperatures by a solid-state reaction (a mixed oxide) route. Structural analysis of the compound is performed using X-ray diffraction data and an orthorhombic crystal system is suggested for the material. Study of room temperature scanning electron microigrapgh exhibited better morphology for the material. The uniform distribution of the small rod-type of grains with dimension of 1–2 µm length and 0.2–0.3 µm diameters was visible. Analysis of temperature-frequency dielectric data exhibited two dielectric anomalies or phase transitions: first transition temperature(t_c1) at 175?°C and the second one at 325?^°C. Study of frequency and temperature dependence of resistive characteristics (performed using complex impedance spectroscopy) has shown significant contributions of grains and grain boundaries, which in turn, helps in understanding the electrical conduction mechanism and microstructure behaviour of the material in a better way. The impedance or Nyquist plots were modelled with an equivalent circuit containing capacitance, resistance and related parameters due to grain (bulk), grain boundaries and capacitance. The transport properties, AC conductivity and electrical modulus of the material were also investigated and reported here.     

Crystal structure and magnetic properties of double perovskite Mn2FeSbO6

The double perovskite Mn₂FeSbO₆ has been synthesized under pressure 6 GPa and temperature 1000 °C. The crystal structure refinement of Mn₂FeSbO₆ was carried out with the GSAS program suite using X-ray diffraction data. XRD pattern of Mn₂FeSbO₆ was indexed with a monoclinic unit cell (space group P2₁/n) with parameters: a = 5.2431(3) Å, b = 5.3935(3) Å, c = 7.6358(5) Å, β = 89.693(2)°, V = 215.927 Å³, Z = 2. It found that Fe and Sb atoms are completely ordered in 2d and 2c positions of double perovskite structure respectively. According to XPS measurements, manganese in this compound is present as Mn²⁺, whiles the iron - as Fe³⁺. Magnetization measurements revealed the presence about 3 mass% of ferromagnetic impurity in the sample. Dependence of AC susceptibility χ″ from temperature showed that magnetic properties compound are determined probably by transformation in antiferromagnetic state below 19.5 K.     

双层复合栅介质膜的制备及电学性能研究

介电常数分别为2.6的聚甲基丙烯酸甲酯(PMMA)及介电常数为16的偏氟乙烯-三氟乙烯共聚物(P(VDF-TrFE))两种不同的有机绝缘材料,通过溶液旋涂的方法在P型硅衬底上制备了不同结构的复合栅介质膜并测试了它们的高频C-V特性及漏电特性。实验结果表明Si-PMMA-P(VDF-TrFE)-Ag结构绝缘膜上单位面积电容达到了35nF/cm2,40V电压下漏电流随着扫描次数的增加逐渐由7.29×10-7 A/cm2降低至3.44×10-7 A/cm2。而Si-P(VDF-TrFE)-PM-MA-Ag结构栅介质膜测得的单位面积电容仅为15nF/cm2,在相同电压下的单位面积漏电流为1.93×10-8 A/cm2。在此基础上分析了电子陷阱以及电场强度对双层栅绝缘膜C-V、I-V特性的影响。     

Thermal conductivity and dielectric properties of Al/PVDF composites

Polymeric composites with relatively high thermal conductivity, high dielectric permittivity, and a low dissipation factor are obtained in the present study. Three types of core-shell-structured aluminum (Al) particles are incorporated in poly(vinylidene fluoride) (PVDF) by melt-mixing and hot-pressing processes. The morphological, thermal, and dielectric properties of the composites are characterized using thermal analysis, a scanning electron microscope, and a dielectric analyzer. The results indicate that the Al particles decrease the degree of crystallinity of PVDF, and that the particle size and shape of the filler affect the thermal conductivity and dielectric properties of Al/PVDF. No variation in the dissipation factor is observed up to 60 wt.% Al. Thermal conductivity and dielectric permittivity values as high as 1.65 W/m K and 230, respectively, as well as a low dissipation factor of 0.25 at 0.1 Hz, are realized for the composites with 80 wt.% spherical Al.     

Studies on conductivity and dielectric properties of polyaniline-zinc sulphide composites

In the present paper, we report electrical conductivity and dielectric studies on the composites of conducting polyaniline (PANI) with crystalline semiconducting ZnS powder, wherein PANI has been taken as inclusion and ZnS crystallites as the host matrix. From the studies, it has been observed that the value of room temperature d.c. conductivity of the composites with volume fraction of PANI > 0.65 shows an unusual behaviour wherein, conductivity values of the composites exceed that of PANI itself with maximum value as high as 6 times that of PANI at the volume fraction of 0.85. A similar trend has also been observed for the real and imaginary parts of complex dielectric constant values of the composites. This unusual behaviour in the d.c. conductivity and dielectric properties has been attributed to the enhancement in the degree of crystallinity of PANI as a consequence of its interfacial interaction with ZnS matrix. The results of optical microscopy show coating of PANI all around the ZnS particles. The temperature dependent conductivity studies suggest the quasi one-dimensional VRH conduction in PANI as well as its composites with ZnS. FTIR and XRD studies have also been reported.