用多孔氧化铝膜为模板制备Fe磁性纳米线

铝在0．3mol／L草酸或硫酸介质中经过阳极氧化,得到不同孔径的多孔氧化铝模板,在此模板中电解沉积的Fe纳米线排布规则、有序,长径比约为150。根据测量的磁滞回线,可以看到制备的铁纳米线具有较大的磁各向异性,其垂直方向具有较高的矫顽力。     

磁性纳米线阵列的制备与应用

介绍了以多孔氧化铝(AAO)和刻蚀高聚物为模板制备磁性纳米线阵列的方法,包括溶胶-凝胶法、化学沉积法和电沉积法等.结合磁性纳米线的研究现状,展望了磁性纳米线阵列在磁记录、巨磁电阻、量子磁盘和高密度磁存储等方面的应用前景.     

Ni_(79)-Fe_(21)合金纳米线的电化学制备与表征

以多孔氧化铝为模板,采用控电位沉积方法制备了Ni-Fe纳米线及其阵列。能谱分析表明,纳米线组成为Ni79-Fe21。X-射线衍射测试表明,Ni-Fe纳米线呈面心立方Ni固溶体结构。磁滞回线测试表明,控电位制备的Ni-Fe纳米线阵列具有良好的软磁性能,500℃退火处理后,Ni-Fe合金纳米线具有硬磁性。     

多孔氧化铝模板电化学沉积铁纳米线结构及磁性能

以硫酸溶液为电解质,采用两步电化学阳极氧化法制备了氧化铝有序多孔膜,孔径为20nln,孔间距为50nm左右,孔洞密度为4.5×1010个/cm2.以此多孔膜为模板,脉冲电压电化学沉积制备金属Fe纳米线阵列,单根纳米线直径为20 nm,Rietveld拟合表明纳米线择优取向为Fe(110)晶面,择优取向因子为0.30.磁滞回线结果表明,垂直于膜面的方向为易磁化方向,当磁场垂直于膜面时,矩形比高达0.914,矫顽力为1 656 Oe.     

钴纳米线阵列的制备和磁性

在具有纳米孔洞的氧化铝模板上 ,用电化学的方法制备了钴纳米线有序阵列 ,磁性测量显示易磁化方向平行于纳米线 ,矫顽力较块材有很大提高 ,可作为垂直磁存储介质 ,理想的存储密度高达 2 .6× 10 10 /cm2     

多孔氧化铝膜制备金纳米线阵列

利用二次阳极氧化法制备了多孔氧化铝模板,用交流电化学沉积方法成功地在模板孔道内制备了Au纳米线。采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)对Au纳米线的形貌、晶体结构进行了研究。结果表明,模板的孔径均匀,孔道平直。Au纳米线均匀分布在PAA纳米孔中,直径与PAA孔径一致,约50 nm,且为多晶结构。     

AAO模板法自组装磁性纳米线阵列及其超顺磁性

高纯铝片在草酸溶液中经直流2次阳极氧化,得到多孔氧化铝(AAO)模板。通过扩孔、缩孔和脱模实现对模板的性能优化。通过交流沉积的方法,在AAO模板内自组装Fe磁性纳米线,形成Fe纳米点阵。扫描电子显微镜(SEM)和透射电子显微镜(TEM)图像分析表明,纳米线粗细均匀,长径比约为100。单根Fe纳米线的TEM衍射花样表明其具有单晶结构。振动样品磁强计(VSM)对纳米线的宏观磁性测量可知Fe纳米线的易磁化方向均沿线长轴方向,Fe的退磁场计算表明阵列中纳米线之间存在着磁相互作用减小了退磁场的作用。Fe纳米线阵列的Mossbauer谱表现出超顺磁性,可能是来源于组成纳米线的小晶粒的超顺磁性。     

一维阵列银纳米线制备及其微观结构

通过直流电沉积,以多孔阳极氧化铝膜(Al2O3/ Al)为模板,在纳米孔道内进行限域生长,制备了金属Ag纳米线.用X射线衍射光谱(XRD)、扫描电镜(SEM)、原子力显微镜(AFM)等检测手段对产物进行了表征.结果表明,Ag纳米线具有面心立方晶体结构,阵列排列整齐,长度超过5μm,单体纳米线的直径约为70 nm,与所用模板的孔径相当.     

电沉积法制备纳米线阵列的研究进展

利用电沉积方法制备纳米线阵列具有方法简单、条件温和、调控简便等优点,具有广阔的应用前景.综述了近期利用电沉积法制备纳米线阵列的研究进展,通过分析目前技术现状探讨了其未来发展趋势.     

直流电沉积二元合金Co55Ni45纳米棒阵列及其表征

引言 一维金属及合金纳米材料由于其纳米尺寸产生的小尺寸效应、表面效应、量子尺寸效应及宏观量子隧道效应导致与常规金属及合金材料迥然不同的热、磁、光、电、敏感特性和表面稳定性,有望在纳机电系统(NEMS)、光吸收过滤器和调制器、垂直磁记录材料和巨磁阻材料、催化剂等领域取得重大突破.人们采取许多种方法进行一维金属及合金纳米材料的合成及性能研究.很多研究者以含有纳米微孔的聚碳酸酯过滤膜或多孔氧化铝膜为模板合成了Au[1]、Cu[2]、Pd[2]、Ag[3]、Fe[4]、Co[5]、CoFe[5]、Ni[6]等一维纳米线,Liu[7]在钼网上气相沉积了Cu纳米棒和纳米线,Xiong等[8]利用二茂铁的夹层结构,还原制备了银纳米线,Yen[9]利用氯化亚铜与二甲基硅氧烷聚合物胶囊材料合成了铜纳米线等,姚素薇等[10]在单晶硅上脉冲电沉积制备了Cu/Co纳米多层膜.相对于单一金属而言,合金由两种及两种以上金属组成而具有多种金属复合性能,因此更具有研究与应用价值,但目前对合金类一维纳米材料的研究还较少.本文以聚碳酸酯膜为模板,利用直流电沉积的方法制备出二元合金Co55Ni45纳米棒阵列结构材料,实验在双电极体系下进行,方法简单,所制备的Co55Ni45合金纳米棒阵列呈锥状结构且整齐排列,可用作垂直磁记录材料及原子力显微镜探针材料.     

Electrochemical preparation and surface properties of gold nanowire arrays formed by the template technique

A new procedure for preparing free-standing nanowire arrays is described. This is based on a template method which entails electrochemical metal deposition into nanometer-wide parallel pores of porous anodic oxide films on aluminum. By varying the preparation conditions and by applying electrochemical posttreatment methods, gold nanowire arrays are prepared, whose morphological and dimensional properties and oxygen content in the nanowire surface can be varied and investigated by SEM and XPS-characterization. The voltammetric behaviour of such nanowire arrays shows a significant enhancement of the ratio between the total electrolytically exposed surface area and the diffusionally accessible surface area in comparison with macroscopic flat gold electrodes.     

氧化钛纳米线阵列的溶胶凝胶模板合成与表征

采用二次阳极氧化工艺制备了高度规则排列的多孔氧化铝（PAA）模板,并利用模板法与溶胶-凝胶法结合的模板组装技术制备了氧化钛纳米线阵列,得到了直径在50 nm左右,线间距约为50 nm的纳米线阵列.研究了模板组装过程不同压力条件对溶胶向模板孔洞中填充度的影响,发现在一定的负压条件下,有利于PAA孔中气体的排出,得到高的溶胶填充度,进而制备出高质量的纳米线阵列.分别通过SEM及XRD技术表征了PAA模板及纳米线的形貌及相结构.SEM观察发现纳米线彼此平行,表面光洁,不存在龟裂,纳米线的长度和直径与所使用模板的厚度和直径一致,表明纳米线的生长受控于模板;XRD分析表明模板为单一的θ-Al₂O₃晶型,纳米线为锐钛矿型TiO₂.     

PS/TiO2核壳型微球和空心TiO2微球有序排列的制备

利用纳米级二氧化钛（TiO₂）溶胶微粒与聚苯乙烯（PS）胶体颗粒的混合悬浮液,以垂直共沉积的方法制备了核壳型PS/TiO₂微球的有序排列。当利用煅烧的方法去除PS胶粒晶体模板后,可以形成空心TiO₂微球的三维有序排列。考察了混合悬浮液中两种胶体颗粒的体积比（PS∶TiO₂=R）对空心TiO₂微球有序排列形成的影响。实验结果表明,合适的R值（6∶1）对于空心微球有序排列的形成至关重要。与此同时,浸渍填充法对照实验的结果表明,煅烧过程中TiO₂纳米颗粒晶型转化引起的收缩是造成TiO₂空心球产生的主要原因。     

磁性Fe3O4纳米粒子用作靶向药物载体的制备及分析

Fe3O4 magnetic nanoparticles were prepared by the aqueous co-precipitation of FeCl3-6H2O and FeCl2-4H2O with addition of ammonium hydroxide. The conditions for the preparation of Fe3O4 magnetic nanoparticles were optimized, and Fe3O4 magnetic nanoparticles obtained were characterized systematically by means of transmission electron microscope （TEM）, dynamic laser scattering analyzer （DLS） and X-ray diffraction （XRD）. The results revealed that the magnetic nanoparticles were cubic shaped and dispersive, with narrow size distribution and average diameter of 11.4 nm. It was found that the homogeneous variation of pH value in the solution via the control on the dropping rate of aqueous ammonia played a critical role in size distribution. The magnetic response of the product in the magnetic field was also analyzed and evaluated carefully. A 32.6 mT magnetic field which is produced by four ferromagnets was found to be sufficient to excite the dipole moments of 0.05 g Fe3O4 powder 2 cm far away from the ferromagnets. In conclusion, the Fe3O4 magnetic nanoparticles with excellent properties were competent for the magnetic carders of targeted-drug in future application.     

Controllable synthesis of branched ZnO/Si nanowire arrays with hierarchical structure

A rational approach for creating branched ZnO/Si nanowire arrays with hierarchical structure was developed based on a combination of three simple and cost-effective synthesis pathways. The crucial procedure included growth of crystalline Si nanowire arrays as backbones by chemical etching of Si substrates, deposition of ZnO thin film as a seed layer by magnetron sputtering, and fabrication of ZnO nanowire arrays as branches by hydrothermal growth. The successful synthesis of ZnO/Si heterogeneous nanostructures was confirmed by morphologic, structural, and optical characterizations. The roles of key experimental parameters, such as the etchant solution, the substrate direction, and the seed layer on the hierarchical nanostructure formation, were systematically investigated. It was demonstrated that an etchant solution with an appropriate redox potential of the oxidant was crucial for a moderate etching speed to achieve a well-aligned Si nanowire array with solid and round surface. Meanwhile, the presence of gravity gradient was a key issue for the growth of branched ZnO nanowire arrays. The substrate should be placed vertically or facedown in contrast to the solution surface during the hydrothermal growth. Otherwise, only the condensation of the ZnO nanoparticles took place in a form of film on the substrate surface. The seed layer played another important role in the growth of ZnO nanowire arrays, as it provided nucleation sites and determined the growing direction and density of the nanowire arrays for reducing the thermodynamic barrier. The results of this study might provide insight on the synthesis of hierarchical three-dimensional nanostructure materials and offer an approach for the development of complex devices and advanced applications.     

Lithography-free fabrication of silicon nanowire and nanohole arrays by metal-assisted chemical etching

We demonstrated a novel, simple, and low-cost method to fabricate silicon nanowire (SiNW) arrays and silicon nanohole (SiNH) arrays based on thin silver (Ag) film dewetting process combined with metal-assisted chemical etching. Ag mesh with holes and semispherical Ag nanoparticles can be prepared by simple thermal annealing of Ag thin film on a silicon substrate. Both the diameter and the distribution of mesh holes as well as the nanoparticles can be manipulated by the film thickness and the annealing temperature. The silicon underneath Ag coverage was etched off with the catalysis of metal in an aqueous solution containing HF and an oxidant, which form silicon nanostructures (either SiNW or SiNH arrays). The morphologies of the corresponding etched SiNW and SiNH arrays matched well with that of Ag holes and nanoparticles. This novel method allows lithography-free fabrication of the SiNW and SiNH arrays with control of the size and distribution.     

Size-selected growth of transparent well-aligned ZnO nanowire arrays

This paper reports the effect of precursor concentration, growth temperature, and growth time on the size and density of ZnO nanowire arrays (ZNAs). The well-aligned ZNAs were grown on indium tin oxide substrate using a facile chemical bath deposition method. The results showed that the ZnO nanowires could be tailored to the desired sizes with a simple variation of the growth parameters. Optical transmission spectra revealed a sufficient transparency of the ZNAs, qualifying them for photovoltaic and other optoelectronic applications. An inverted hybrid solar cell was fabricated using the ZNAs as the electron collecting layer, and the solar cell exhibited a power conversion efficiency of 0.91%.     

Synthesis and magnetic properties of Cu-doped ZnO nanowire arrays

Arrays of Cu-doped ZnO nanowires were successfully fabricated by electrodeposition of Zn²⁺ and Cu²⁺ into anodic aluminum oxide template and post-oxidation annealing in air atmosphere. The transmission electron microscopy result shows that the nanowires are uniform, about 100 nm in diameter and with the aspect ratio of up to 40. Selected area electron diffraction and X-ray diffraction results indicate that the nanowires are in hexagonal wurtzite structure. Magnetization measurements show that the Zn_1−xCu_xO (x = 0.07 and 0.11) nanowires exhibit room-temperature ferromagnetism and the enhancement of the ferromagnetism is revealed for the Zn_0.93Cu_0.07O nanowires annealed in vacuum.     

Fabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction

This work develops a method for growing Ni-silicide/Si heterostructured nanowire arrays by glancing angle Ni deposition and solid state reaction on ordered Si nanowire arrays. Samples of ordered Si nanowire arrays were fabricated by nanosphere lithography and metal-induced catalytic etching. Glancing angle Ni deposition deposited Ni only on the top of Si nanowires. When the annealing temperature was 500°C, a Ni₃Si₂ phase was formed at the apex of the nanowires. The phase of silicide at the Ni-silicide/Si interface depended on the diameter of the Si nanowires, such that epitaxial NiSi₂ with a {111} facet was formed at the Ni-silicide/Si interface in Si nanowires with large diameter, and NiSi was formed in Si nanowires with small diameter. A mechanism that is based on flux divergence and a nucleation-limited reaction is proposed to explain this phenomenon of size-dependent phase formation.