Integrated self-assembling and holding technique applied to a 3-D MEMS variable optical attenuator

The application of polysilicon/gold bimorph stress-induced curved beams for three-dimensional self-assembly of MEMS devices is reported. The mechanical principle behind this self-assembling procedure is presented and comparison with current assembling methods are made. With this self-assembling technique, no postprocessing is required. A free-space optical MEMS device in the form of a variable optical attenuator (VOA) has been fabricated and self-assembled using this technique. The angular elevation of the self-assembled structures and the attenuation characteristics of the optical MEMS device are reported. The VOA has a measured dynamic attenuation range of 44 dB at 1.55 /spl mu/m optical wavelength. The bending of the bimorph beams is also temperature controllable, and the thermal behavior of the beams is also reported.     

Design and nonlinear servo control of MEMS mirrors and their performance in a large port-count optical switch

In this paper, we demonstrate full closed-loop control of electrostatically actuated double-gimbaled MEMS mirrors and use them in an optical cross-connect. We show switching times of less than 10 ms and optical power stability of better than 0.2 dB. The mirrors, made from 10-/spl mu/m-thick single-crystal silicon and with a radius of 400-450 /spl mu/m, are able to tilt to 8/spl deg/ corresponding to 80% of touchdown angle. This is achieved using a nonlinear closed-loop control algorithm, which also results in a maximum actuation voltage of 85 V, and a pointing accuracy of less than 150 /spl mu/rad. This paper will describe the MEMS mirror and actuator design, modeling, servo design, and measurement results.     

Design and fabrication aspects of an S-shaped film actuator based DC to RF MEMS switch

This paper reports on design and fabrication aspects of a new microelectromechanical series switch for switching dc and RF signals. The switch consists of a flexible S-shaped film with the switching contact, rolling between a top and a bottom electrode in electrostatic touch-mode actuation. This design allows a low actuation voltage independent of the contact distance in the off-state. With a large contact distance, large overlapping switching contact areas are possible by obtaining a high off-state isolation. The RF transmission line and the MEMS part of the switch are fabricated on separate wafers, allowing an implementation of the switch with different RF substrates. The final assembly is done on device level for the first prototypes, even though the design provides the possibility of an assembly by full wafer bonding, leading to a near-hermetic package integrated switch. The measured prototype actuation voltages are 12 V to open and 15.8 V to close the contacts, with a resistance of 275 m/spl Omega/ of each contact at an estimated contact force of 102 /spl mu/N. The measured RF isolation with a contact distance of 14.2 /spl mu/m is better than -45 dB up to 2 GHz and -30 dB at 15 GHz, at a large nominal switching contact area of 3500 /spl mu/m/sup 2/.     

Low-voltage, large-scan angle MEMS analog micromirror arrays with hidden vertical comb-drive actuators

This paper reports on novel polysilicon surface-micromachined one-dimensional (1-D) analog micromirror arrays fabricated using Sandia's ultraplanar multilevel MEMS technology-V (SUMMiT-V) process. Large continuous DC scan angle (23.6/spl deg/ optical) and low-operating voltage (6 V) have been achieved using vertical comb-drive actuators. The actuators and torsion springs are placed underneath the mirror (137/spl times/120 /spl mu/m/sup 2/) to achieve high fill-factor (91%). The measured resonant frequency of the mirror ranges from 3.4 to 8.1 kHz. The measured DC scanning characteristics and resonant frequencies agree well with theoretical values. The rise time is 120 /spl mu/s and the fall time is 380 /spl mu/s. The static scanning characteristics show good uniformity (相似文献   

Low-actuation voltage RF MEMS shunt switch with cold switching lifetime of seven billion cycles

This paper investigates the performance and lifetime of a metal-to-metal shunt RF MEMS switch fabricated on an SI-GaAs substrate. The switch is a shunt bridge design that is compatible with standard microelectronic processing techniques. The RF performance of the switch includes actuation voltages of less than 15 V, isolation better than 20 dB from 0.25 to 40 GHz, and switching speeds of less than 22 /spl mu/s. Varying the geometry of the switch affects both switching voltage and reliability, and the tradeoffs are discussed. We have developed a cold switching test method to identify the root cause of sticking as a failure mechanism. The switch structure includes "separation posts" that eliminate sticking failure and has demonstrated lifetimes as high as 7/spl times/10/sup 9/ cold switching cycles. These results show that good reliability is possible with a metal-to-metal RF MEMS switch operated with a low actuation voltage.     

Arrays of monocrystalline silicon micromirrors fabricated using CMOS compatible transfer bonding

In this paper, we present CMOS compatible fabrication of monocrystalline silicon micromirror arrays using membrane transfer bonding. To fabricate the micromirrors, a thin monocrystalline silicon device layer is transferred from a standard silicon-on-insulator (SOI) wafer to a target wafer (e.g., a CMOS wafer) using low-temperature adhesive wafer bonding. In this way, very flat, uniform and low-stress micromirror membranes made of monocrystalline silicon can be directly fabricated on top of CMOS circuits. The mirror fabrication does not contain any bond alignment between the wafers, thus, the mirror dimensions and alignment accuracies are only limited by the photolithographic steps. Micromirror arrays with 4/spl times/4 pixels and a pitch size of 16 /spl mu/m/spl times/16 /spl mu/m have been fabricated. The monocrystalline silicon micromirrors are 0.34 /spl mu/m thick and have feature sizes as small as 0.6 /spl mu/m. The distance between the addressing electrodes and the mirror membranes is 0.8 /spl mu/m. Torsional micromirror arrays are used as spatial light modulators, and have potential applications in projection display systems, pattern generators for maskless lithography systems, optical spectroscopy, and optical communication systems. In principle, the membrane transfer bonding technique can be applied for integration of CMOS circuits with any type of transducer that consists of membranes and that benefits from the use of high temperature annealed or monocrystalline materials. These types of devices include thermal infrared detectors, RF-MEMS devices, tuneable vertical cavity surface emitting lasers (VCSEL) and other optical transducers.     

A low-temperature thin-film electroplated metal vacuum package

This paper presents a packaging technology that employs an electroplated nickel film to vacuum seal a MEMS structure at the wafer level. The package is fabricated in a low-temperature (<250/spl deg/C) 3-mask process by electroplating a 40-/spl mu/m-thick nickel film over an 8-/spl mu/m sacrificial photoresist that is removed prior to package sealing. A large fluidic access port enables an 800/spl times/800 /spl mu/m package to be released in less than three hours. MEMS device release is performed after the formation of the first level package. The maximum fabrication temperature of 250/spl deg/C represents the lowest temperature ever reported for thin film packages (previous low /spl sim/400/spl deg/C). Implementation of electrical feedthroughs in this process requires no planarization. Several mechanisms, based upon localized melting and Pb/Sn solder bumping, for sealing low fluidic resistance feedthroughs have been investigated. This package has been fabricated with an integrated Pirani gauge to further characterize the different sealing technologies. These gauges have been used to establish the hermeticity of the different sealing technologies and have measured a sealing pressure of /spl sim/1.5 torr. Short-term (/spl sim/several weeks) reliability data is also presented.     

Testing of "Venetian-Blind" silicon microstructures with optical methods

In this paper, we illustrate the design and testing of new silicon microstructures, fabricated by means of a conventional planar process. These "Venetian-blind" structures consist of arrays of narrow, rectangular suspended masses (width =31 /spl mu/m, length =400 /spl mu/m, thickness =15 /spl mu/m), which can be tilted using electrostatic actuation. Characterization of their static and dynamic behavior was performed with optical methods. The diffraction patterns in monochromatic light were analyzed and vibration measurements were performed by means of semiconductor laser feedback interferometry: experimental data on the tilt angle as a function of the applied voltage and on the resonance frequencies are reported. A maximum tilt angle of approximately 1.9/spl deg/ was obtained with a driving voltage in the range of 70-95 V. All the tested devices showed resonance frequencies higher than 80 kHz, which is fast enough (i.e., switching time in the millisecond range) for future use in optical interconnections. Numerical analyses were performed to evaluate the coupled electromechanical behavior of the microstructures, confirming the observed experimental behavior.     

Self-aligned vertical electrostatic combdrives for micromirror actuation

In this paper, we analyze the effect of misalignment in electrostatic combdrives, and describe a fabrication technology that minimizes misalignment in vertical electrostatic combdrives by creating self-aligned, vertically staggered electrodes. Self-alignment of the interdigitated electrodes simplifies fabrication and minimizes failures due to electrostatic instability, thus enabling fabrication of narrow-gap, high-force actuators with high yield. The process is based on deep-reactive ion etching (DRIE) of buried-patterned silicon-on-insulator (SOI) wafers. Measurements on fabricated combdrives show relative misalignment of less than 0.05 /spl mu/m. This corresponds to less than 0.1% misalignment, which, according to our analysis, results in a travel range of 98% of that for perfectly aligned drives. The validity of the process is demonstrated by fabrication of scanning micromirrors measuring 300 /spl mu/m by 100 /spl mu/m. Optical angular deflections from 4/spl deg/ at low frequency to 40/spl deg/ at resonance were measured for an applied voltage of 75 Vpp. Resonant frequencies ranged from 5 kHz to 15 kHz for these devices, making them suitable for high-speed, high-resolution optical scanning and switching.     

The SiOG-based single-crystalline silicon (SCS) RF MEMS switch with uniform characteristics

This paper details single-crystalline silicon (SCS) direct contact radio frequency microelectromechanical systems (RF MEMS) switch designed and fabricated using an SiOG (silicon-on-glass) substrate, so as to obtain higher fabrication and performance uniformity compared with a conventional metal switch. The mechanical and electrical performances of the fabricated silicon switch have been tested. In comparison with a conventional metallic MEMS switch, we can obtain higher productivity and uniformity by using SCS, because it has very low stresses and superior thermal characteristics as a structural material of the switch. Also, by using the SiOG substrate instead of an SOI substrate, fabrication cost can be significantly reduced. The proposed switch is fabricated on a coplanar waveguide (CPW) and actuated by electrostatic force. The designed chip size is 1.05 mm/spl times/0.72 mm. Measured pull-in voltage and actuation voltage were 19 V and 26 V, respectively. Eighteen identical switches taken randomly throughout the wafer showed average and standard deviation of the measured pull-in voltage of 19.1 and 1.5 V, respectively. The RF characteristics of the fabricated switch from dc to 30 GHz have been measured. The isolation and insertion loss measured on the four identical samples were -38 to -39 dB and -0.18 to -0.2 dB at 2 GHz, respectively. Forming damping holes on the upper electrode leads to a relatively fast switching speed. Measured ON and OFF time were 25 and 13 /spl mu/s, respectively. In the switch OFF state, self-actuation does not happen up to the input power of 34 dBm. The measured holding power of the fabricated switch was 31 dBm. Stiction problem was not observed after 10/sup 8/ cycles of repeated actuation, but the contact resistance varied about 0.5-1 /spl Omega/ from the initial value.     

Two-axis single-crystal silicon micromirror arrays

This work presents the design, fabrication, and testing of a two-axis 320 pixel micromirror array. The mirror platform is constructed entirely of single-crystal silicon (SCS) minimizing residual and thermal stresses. The 14-/spl mu/m-thick rectangular (750/spl times/800 /spl mu/m/sup 2/) silicon platform is coated with a 0.1-/spl mu/m-thick metallic (Au) reflector. The mirrors are actuated electrostatically with shaped parallel plate electrodes with 86 /spl mu/m gaps. Large area 320-mirror arrays with fabrication yields of 90% per array have been fabricated using a combination of bulk micromachining of SOI wafers, anodic bonding, deep reactive ion etching, and surface micromachining. Several type of micromirror devices have been fabricated with rectangular and triangular electrodes. Triangular electrode devices displayed stable operation within a (/spl plusmn/5/spl deg/, /spl plusmn/5/spl deg/) (mechanical) angular range with voltage drives as low as 60 V.     

Integrated optical planar waveguide components

 Planar optical waveguides for applications in communication networks can be fabricated using conventional chip-manufacturing techniques. We present a planar optical waveguide technology that is based on a silicon-oxynitride (SiON) core and silicon-oxide cladding layers. In addition to more compact, conventional optical devices, it also enables enhanced optical functions such as dynamically reconfigurable planar integrated optical devices. Examples of adaptive devices realized in this technology include finite and infinite impulse response (FIR and IIR) filters. Received: 13 February 2002/Accepted: 28 February 2002 In realizing the SiON waveguide technology and the adaptive optical filter functions with the subsystem control, the dedicated work of the waveguide process technology, the photonic device technology, and the engineering services teams at IBM's Zurich Research Laboratory were instrumental and are gratefully acknowledged. For the concept-level optical-packaging work we thank Optospeed SA. This paper was presented at the Workshop “Optical MEMS and Integrated Optics” in June 2001.     

Characterization of selective polysilicon deposition for MEMS resonator tuning

Variations in micromachining processes cause submicron differences in the size of MEMS devices, which leads to frequency scatter in resonators. A new method of compensating for fabrication process variations is to add material to MEMS structures by the selective deposition of polysilicon. It is performed by electrically heating the MEMS in a 25/spl deg/C silane environment to activate the local decomposition of the gas. On a (1.0/spl times/1.5/spl times/100) /spl mu/m/sup 3/, clamped-clamped, polysilicon beam, at a power dissipation of 2.38 mW (peak temperature of 699/spl deg/C), a new layer of polysilicon (up to 1 /spl mu/m thick) was deposited in 10 min. The deposition rate was three times faster than conventional LPCVD rates for polysilicon. When selective polysilicon deposition (SPD) was applied to the frequency tuning of specially-designed, comb-drive resonators, a correlation was found between the change in resonant frequency and the length of the newly deposited material (the hotspot) on the resonator's suspension beams. A second correlation linked the length of the hotspot to the magnitude of the power fluctuation during the deposition trial. The mechanisms for changing resonant frequency by the SPD process include increasing mass and stiffness and altering residual stress. The effects of localized heating are presented. The experiments and simulations in this work yield guidelines for tuning resonators to a target frequency.     

Microfluidic electrodischarge devices with integrated dispersion optics for spectral analysis of water impurities

This paper reports a microfluidic device that integrates electrical and optical features required for field-portable water-chemistry testing by discharge spectroscopy. The device utilizes a dc-powered spark between a metal anode and a liquid cathode as the spectral source. Impurities are sputtered from the water sample into the microdischarge and characteristic atomic transitions due to them are detected optically. A blazed grating is used as the dispersion element. The device is fabricated from stacked glass layers, and is assembled and used with a charge-coupled device (CCD) sensing element to distinguish atomic spectra. Two structural variations and optical arrangements are reported. Detection of Cr and other chemicals in water samples has been successfully demonstrated with both devices. The angular resolution in terms of angular change per unit variation in wavelength (/spl part//spl theta///spl part//spl lambda/) is experimentally determined to be approximately 0.10 rad//spl mu/m, as opposed to the idealized theoretical estimate of 0.22 rad//spl mu/m. This is because the microdischarge is uncollimated and not a point source. However, this is sufficient angular resolution to allow critical spectra of metal impurities to be distinguished.     

Moving Polymer Waveguides and Latching Actuator for 2 $ times$ 2 MEMS Optical Switch

We describe a novel type of MEMS optical switch based on moving waveguide which has merits inherited from both MEMS and integrated optics technologies. It provides an expandable 2 $times$ 2 switching capability, a first in this category of switches. The switch is built by assembling independently optimized latching silicon actuator and soft polymer waveguides. The actuator is based on two new structures: a microhinge, dubbed the fork hinge, and a latching structure using a precompressed microspring. The mechanical switching speed was measured below 0.5 ms. The complex polymer waveguide structure was thoroughly characterized to obtain all the components of the optical loss. This analysis allowed us to estimate robustly the insertion loss of the assembled optical switch below 3 dB and to identify the possibilities to improve this figure. $hfill$[2008-0142]      

Broadband radio frequency MEMS series contact switch with low insertion loss

A new radio frequency (RF) micro-electro-mechanical-system (MEMS) single cantilever series contact switch is designed as a low-insertion-loss and low-power electronic component that is intended to provide integrated control of the opening and closing signals of other MEMS devices operating over a wide frequency range (DC–60 GHz). The MEMS switching element consists of an A-type top electrode that is fixed onto coplanar waveguide lines through anchor points to reduce the insertion loss in the on-state of the device. The air gap between the top electrode and the actuation electrode of the designed MEMS switch is optimized to improve the isolation characteristics of the switch. In addition, the switching voltage required is approximately 24 V. The simulation results presented here show that the insertion loss of the switch in the on-state is less than 0.71 dB, while the minimum isolation is 20.69 dB in the off-state at 60 GHz. The proposed RF MEMS switch will be useful for communication devices and test instruments used in broadband applications.

     

Performance improvement of an electrothermal microactuator fabricated using Ni-diamond nanocomposite

In this paper, a low-temperature stress-free electrolytic nickel (EL) deposition process with added dispersed diamond nanoparticles (diameter <0.5 /spl mu/m) is developed to synthesize Ni-diamond nanocomposite for fabricating electrothermal microactuators. Device characterization reveals dramatic performance improvements in the electrothermal microactuator that is made of the nanocomposite, including a reduction in the input power requirement and enhanced operation reliability. In comparison with the microactuator made of pure nickel, the nanocomposite one can save about 73% the power for a 3 /spl mu/m output displacement and have a longer reversible displacement range, which is prolonged from 1.8 /spl mu/m to more than 3 /spl mu/m. Furthermore, the nanocomposite device exhibits no performance degradation after more than 100 testing cycles in the reversible regime. The enhancements increase with the incorporation of the nanodiamond in a nickel matrix, so the Ni-diamond nanocomposite has potential for application in MEMS fabrication.     

An in-plane high-sensitivity, low-noise micro-g silicon accelerometer with CMOS readout circuitry

A high-sensitivity, low-noise in-plane (lateral) capacitive silicon microaccelerometer utilizing a combined surface and bulk micromachining technology is reported. The accelerometer utilizes a 0.5-mm-thick, 2.4/spl times/1.0 mm/sup 2/ proof-mass and high aspect-ratio vertical polysilicon sensing electrodes fabricated using a trench refill process. The electrodes are separated from the proof-mass by a 1.1-/spl mu/m sensing gap formed using a sacrificial oxide layer. The measured device sensitivity is 5.6 pF/g. A CMOS readout circuit utilizing a switched-capacitor front-end /spl Sigma/-/spl Delta/ modulator operating at 1 MHz with chopper stabilization and correlated double sampling technique, can resolve a capacitance of 10 aF over a dynamic range of 120 dB in a 1 Hz BW. The measured input referred noise floor of the accelerometer-CMOS interface circuit is 1.6/spl mu/g//spl radic/Hz in atmosphere.     

A monolithic three-axis micro-g micromachined silicon capacitive accelerometer

A monolithic three-axis micro-g resolution silicon capacitive accelerometer system utilizing a combined surface and bulk micromachining technology is demonstrated. The accelerometer system consists of three individual single-axis accelerometers fabricated in a single substrate using a common fabrication process. All three devices have 475-/spl mu/m-thick silicon proof-mass, large area polysilicon sense/drive electrodes, and small sensing gap (<1.5 /spl mu/m) formed by a2004 sacrificial oxide layer. The fabricated accelerometer is 7/spl times/9 mm/sup 2/ in size, has 100 Hz bandwidth, >/spl sim/5 pF/g measured sensitivity and calculated sub-/spl mu/g//spl radic/Hz mechanical noise floor for all three axes. The total measured noise floor of the hybrid accelerometer assembled with a CMOS interface circuit is 1.60 /spl mu/g//spl radic/Hz (>1.5 kHz) and 1.08 /spl mu/g//spl radic/Hz (>600 Hz) for in-plane and out-of-plane devices, respectively.     

A micromachining process for die-scale pattern transfer in ceramics and its application to bulk piezoelectric actuators

This paper reports on a batch mode planar pattern transfer process for bulk ceramics, glass, and other hard, brittle, nonconductive materials suitable for micromachined transducers and packages. The process is named LEEDUS, as it combines lithography, electroplating, batch mode micro electro-discharge machining (/spl mu/EDM) and batch mode micro ultrasonic machining (/spl mu/USM). An electroplating mold is first created on a silicon or metal wafer using standard lithography, then using the electroplated pattern as an electrode to /spl mu/EDM a hard metal (stainless steel or WC/Co) tool, which is finally used in the /spl mu/USM of the ceramic substrate. A related process (SEDUS) uses serial /spl mu/EDM and omits lithography for rapid prototyping of simple patterns. Feature sizes of 25 /spl mu/m within a 4.5/spl times/4.5 mm/sup 2/ die have been micromachined on glass-mica (Macor) ceramic plates with 34 /spl mu/m depth. The ultrasonic step achieves 18 /spl mu/m/min. machining rate, with a tool wear ratio of less than 6% for the stainless steel microtool. Other process characteristics are also described. As a demonstration, octagonal and circular spiral shaped in-plane actuators were fabricated from bulk lead zirconate titanate (PZT) plate using the LEEDUS/SEDUS process. A device of 20 /spl mu/m thickness and 450 /spl mu/m/spl times/420 /spl mu/m footprint produces a displacement of /spl ap/2/spl mu/m at 40 V.