碳氟感应耦合等离子体的SiO2介质刻蚀的研究

使用感应耦合等离子体技术,通过改变源气体流量比R(R=[C4F8]/{[C4F8] [Ar]})、射频源功率、自偏压等条件进行了SiO2介质刻蚀实验研究。碳氟等离子体的特征由朗谬探针和发射光谱技术来表征。结果表明,SiO2的刻蚀速率随放电源功率和射频自偏压的增大而单调上升,与R的关系则存在R=8%处的刻蚀速率峰值。C2基团的发射谱线强度随R的变化类似于SiO2刻蚀速率对R的依赖关系,对此给出了解释。在此基础上,对SiO2介质光栅进行了刻蚀。结果显示,在较大的R及自偏压等条件下,刻蚀后的槽形呈轻微的锥形图案,同时光刻胶掩膜图形出现分叉。结合扫描电镜技术对此进行了分析,认为光刻胶表面与侧面的能量传递和聚合物再沉积是导致出现上述现象的原因。     

GaAs背面通孔刻蚀技术研究

比较研究了GaAs背面通孔腐蚀中的湿法腐蚀和ICP干法刻蚀技术,并利用感应离子耦合(ICP)干法刻蚀技术,采用CCl2F2／Ar混合气体,对GaAs衬底上的通孔工艺进行了研究。通过优化气压、射频功率、CCl2F2／Ar混合气体组分配比,在CCl2F2流量为200sccm,Ar流量为10sccm,源功率Pa=400W,偏压功率Pb=14W,自偏压Vb=120V,真空度P=43Pa时,得到了表面平滑的通孔形貌和最大的通孔刻蚀速率(4．3μm／min)。     

HfO2薄膜的反应离子刻蚀特性研究

研究了HfO2薄膜在CHF3/Ar和SF6/Ar等气体中的反应离子刻蚀机理.结果表明刻蚀气体的组分和射频偏压对刻蚀速率有较大影响,而气体流量影响不大.CHF3和SF6与HfO2的反应产物具有较好的挥发性,Ar的引入不仅可以打破分子之间的键合促进刻蚀产物的形成,而且通过轰击加快产物从材料表面解吸,从而提高HfO2刻蚀速率.AFM测量结果表明刻蚀降低了HfO2表面粗糙度,显示刻蚀工艺对材料的低损伤.     

ICP刻蚀GaP表面形貌控制

不同角度的GaP表面形貌刻蚀主要依赖于刻蚀参数的调节以及光刻胶的形貌,但要得到能够重复的光刻胶形貌是很困难的.研究了如何通过调节感应耦合等离子（ICP）刻蚀仪器本身的参数,而不依赖于不定的光刻胶形貌来得到可重复的表面形貌.通过研究可知,射频功率与腔室压强是影响表面形貌的最重要的两个参数.射频功率越小刻蚀得到的角度越大,腔室压强越大刻蚀得到的角度也越大.通常BCl3等离子体被用来作为GaP的刻蚀气体,但为了维持所需的等离子浓度以及更大的操作压强,Ar被加入刻蚀气体中.     

CF4/CHF3反应刻蚀石英和BK7玻璃

用CF4/CHF3作为工作气体对石英和BK7玻璃进行了研究,分析了气体组分、气体流量和射频偏压等几种因素对刻蚀速率的影响,结果表明刻蚀速率与射频偏压的均方根成正比.在1 CF4∶1CHF3的等离子体中由于与光刻胶良好的刻蚀选择比,在石英基片上获得了侧壁陡直的槽形.用光学表面轮廓仪观测的结果表明偏压的增加和过高的气体流量易使基片表面质量下降.     

Cl2/Ar感应耦合等离子体刻蚀InP工艺研究

采用Cl2／Ar感应耦合等离子体对InP进行了刻蚀。讨论了直流自偏压、ICP功率、气体总流量和气体组分等因素对刻蚀速率和粗糙度的影响。结果表明Cl2／Ar气体组分是决定刻蚀效果的重要因素。当Cl2含量为30％左右时,刻蚀中的物理溅射与化学反应过程趋于平衡,刻蚀速率处于峰值区,同时刻蚀粗糙度也可达到最小值。SEM照片显示刻蚀表面光洁。侧壁陡直。     

基于CF_4/Ar高密度感应耦合等离子体的BZN薄膜的刻蚀工艺研究

使用CF4/Ar高密度感应耦合等离子体(ICP)对磁控溅射法制得的铌酸锌铋(BZN)薄膜进行了干法刻蚀工艺研究。分析了BZN薄膜的刻蚀速率随工艺气体流量比、总流量和工作压强的改变而出现极大值的原因,展示了BZN薄膜的刻蚀速率随ICP功率的增大而线性增加的趋势。研究结果表明,使用CF4/Ar感应耦合等离子体对BZN薄膜进行刻蚀的机理为物理辅助的化学反应刻蚀。BZN薄膜的最佳刻蚀工艺参数为CF4/Ar流量比3/2、总流量25sccm、工作压强1.33Pa、ICP功率800W,使用此参数对BZN薄膜进行刻蚀,最大刻蚀速率为26nm/min,刻蚀后薄膜边缘齐整、表面光滑、形状完整。     

微波ECR等离子体刻蚀AAO模板中HfO_2薄膜的研究

采用微波电子回旋共振(ECR)等离子体装置,对用原子层沉积(ALD)方法在阳极氧化铝模板(AAO)上制备的HfO_2薄膜进行了纳米图案化研究。用CF_4、Ar和O_2等离子体,对HfO_2薄膜进行了反应离子束刻蚀,以移除HfO_2。采用高分辨率扫描电子显微镜(SEM)、原子力显微镜(AFM)和能量色散X射线光谱显微(EDX)分析,对样品刻蚀前后的形貌、结构和化学成分进行了表征。实验表明,HfO_2的刻蚀具有定向性,利于高深宽比微机械结构的加工。在其他参数固定的情况下,深宽比高达10∶1的结构中HfO_2的刻蚀速率是微波功率、负脉冲偏压、CF_4/Ar/O_2混合比(Ar含量在0～100%)和工作气压的函数。在0.3 Pa气压、600 W微波功率、100 V偏置电压下,HfO_2拥有0.36 nm/min的可控刻蚀速率,利于HfO_2的精准图案化。刻蚀形貌表明,在CF_4/Ar/O_2等离子体刻蚀之后,刻蚀面非常光滑,具有0.17 nm的均方根线粗糙度。     

新型相变材料Ti0.5Sb2Te3刻蚀工艺及其机理研究

采用CF4和Ar混合气体研究了新型相变材料Ti0.5Sb2Te3(TST)的刻蚀特性,重点优化和研究了刻蚀气体总流速、CF4/Ar的比例、压力和功率等工艺参数对刻蚀形貌的影响。结果表明,当气体总流量为50 sccm、CF4浓度为26%﹑刻蚀功率为400 W和刻蚀压力为13.3 Pa时,刻蚀速度达到126 nm/min,TST薄膜刻蚀图形侧壁平整而且垂直度好(接近90°)﹑刻蚀表面平整(RMS为0.82 nm)以及刻蚀的片内均匀性等都非常好。     

CF4/Ar等离子体刻蚀中入射角对SiO2刻蚀速率的影响

在CF4/Ar的感应耦合等离子体中,用"法拉第筒"式的方法研究了SiO2刻蚀速率与不同离子入射角度之间的关系.在所施加的-20～300V射频偏压范围内,SiO2基片的归一化刻蚀速率(NER)呈现两种情况,当偏压值＜100V时,归一化刻蚀速率的大小与基片倾斜角度θ符合余弦曲线规律;当偏压值＞100V时,θ在15°～60°范围内,归一化刻蚀速率的大小在大于相应的余弦值,θ＞60°时归一化刻蚀速率快速下降,在90°附近SiO2表面出现聚合物沉积.θ＜60°时,SiO2的表面刻蚀主要决定于入射离子与基片表面间的能量转换,转换能量的大小深刻地影响着SiO2的刻蚀速率,同时也影响形成于基片表面的碳氟聚合物的去除速率.     

Preparation and phase studies of the ternary semiconducting compounds ZnSnP2, ZnGeP2, ZnSiP2, CdGeP2, and CdSiP2

ZnSnP₂, ZnGeP₂, ZnSiP₂, CdGeP₂ and CdSiP₂ have been prepared in single or polycrystalline form by direct synthesis from the elements, combination of the group IV element with the II-V₂ phosphide, vapour transport or solution growth. Differential thermal analysis and X-ray powder diffraction studies have been used to determine the temperatures of phase transitions in each of these compounds. Of particular interest is the observation of a phase transition in CdSiP₂ at 1098° C some 22° C below the melting point. The thermal analysis studies of ZnSnP₂ indicate a peak, the cause of which is uncertain, at 720° C which is well separated from the melting temperature of 930° C; further ZnSnP₂ does not appear to be congruently melting and has a freezing point at 970° C. c/a ratios have been determined for all five compounds to 1 part in 2000.     

Growth of IrO2, SnO2, and SnO2:IrO2 crystals

Crystals of IrO₂, SnO₂, and SnO₂:IrO₂ have been grown by chemical vapor transport. The IrO₂ crystals are larger than any previously reported. The SnO₂ and SnO₂:IrO₂ crystals are optically clear and are suitable for optical properties studies. This is the first report on the growth of SnO₂:IrO₂ crystals.     

High-Frequency Point-Contact Spectroscopy of TiSi2, TaSi2, and VSi2

High-frequency point-contact spectroscopy as well as conventional low-frequency PC spectroscopy has been used for determining the spectral functions of the electron-phonon interaction (EPI) for three disilicides TiSi₂, TaSi₂, and VSi₂. The temperature dependences of resistivity have been calculated from obtained EPI functions. Comparison of calculated dependences with known experimental data allowed correction of the electron-phonon interaction constants for the studied disilicides.     

Mass Spectrometric Study of NF2, NF3, N2F2, and N2F4

Appearance potentia’s have been measured for selected ions from NF₂, NF₃, N₂F₂, and N₂F₄. Ionization-dissociation processes are identified and bond dissociation energies are calculated. In addition, the bond dissociation energy, D(F₂N–NF₂), has been directly measured to be 5.14±0.38 kj/mole (21.5± 1.6 kcal/mole). A summary is made of available thermochemical and mass spectrometric data for N–F compounds and some evidence is presented to support the designation of cis and trans structures for the N₂F₂ isomers.     

Low temperature specific heat of VSi2, NbSi2, and TaSi2

We present low temperature specific heat measurements of VSi₂, NbSi₂ and TaSi₂. The three disilicides crystallize in the same hexagonal structure (C40, space group P6₂22). The measured values of the electronic Density of States at the Fermi Energy,D(E_F), are in good agreement with theoretical band structure calculations. The obtained Debye temperatures vary asM ^–1/2 (M is the molar mass of the compound), showing that the interatomic forces are similar in the three disilicides. NbSi₂ and TaSi₂ are found to be superconductors at 0.130K and 0.353K respectively. The variation of the transition temperatures is discussed.Also affiliated with Laboratoire des Matériaux et du Génie Physique, ENSPG, INPG.     

Electrical and tensile properties of Cu-ThO2, Au-ThO2, Pt-ThO2 and Au-Al2O3, Pt-Al2O3 alloys

Dispersion-strengthened alloys of Pt, Au and Cu containing ThO₂ and Al₂O₃ were prepared by precipitating the elements from a solution containing a suspension of the oxide phase. The precipitate deposited on the oxide particles of 0.05μm average diameter and produced dispersions of good homogeneity on compaction. Alloys containing less than 2 vol% oxide phase had sufficient ductility to permit fabrication of wire. Tensile strength and elongation, hardness, and electrical resistivity were measured as a function of temperature up to 1000°C. The dispersion-strengthening caused a relatively small increase in the resistivity of the alloys compared to the resistivity of the metals. The alloys are useful where high electrical or thermal conductivity combined with superior tensile strength, hardness and oxidation resistance at elevated temperatures, are desirable.     

Comparison of the Electronic Structures of La2CuO4, Sr2CuO2Cl2, and Sr2CuO2F2

First-principles cluster calculations are reported of the local electronic structure of the three compounds: La₂CuO₄, Sr₂CuO₂Cl₂, and Sr₂CuO₂F₂. The copper ${\text{3d}}_{x^2 - y^2 } $ and the planar oxygen 2p _σ atomic orbitals exhibit a similar degree of covalency. The out-of-plane orbitals, however, are quite different with the ${\text{3}}d_{3z^2 - r^2 } $ atomic orbital lowered significantly in energy for chlorine and fluorine apical positions.     

The vapor pressure of 1, 1-dichloro-2, 2, 2-trifluoroethane (R123)

The vapor pressure of 1, 1-dichloro-2, 2, 2-trifluoroethane (R123) has been measured at temperatures between 256.4 and 453.8 K by ebulliometric and static techniques. These results have been combined to obtain a correlation for the vapor pressure from 256.4 K to the critical temperature.     

Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2

Nano Research - Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2, MoSe2, WS2 and WSe2. In this work we provide a thorough...