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1.
为了在二维微驱动系统中实时检出磁性移动块的存在位置 ,提出并试制了一种基于MEMS工艺的微型磁性开关阵列 ,它作为一种位置传感器通过扫描查询方式工作。对该传感器的工作原理、制做工艺做了详细的描述 ,并给出了一些实验结果。  相似文献   

2.
Based on the multisplit-ring resonator (MSRR) with MEMS switches, a tunable metamaterial component is proposed in this paper to realize multiband applications. Numerical simulations are carried out to verify the tunable capacity of the proposed structure. The simulated results show that the resonance frequency of the metamaterial component shifts to higher frequencies when the MEMS switches are at different states, and depends strongly on the place, state and microbeam height of MEMS switches. Moreover, the large tunable range can be obtained by controlling the up state or down state of MEMS switches, while the small tunable range can be obtained by controlling microbeam height of MEMS switches. That is, such controlling ways can realize both rough and minor tunable metamaterial component. The tunable method proposed in this paper is of great practical values in designing tunable metamaterial and negative refractive index material.  相似文献   

3.
制备了一种基于MEMS工艺的定向天线。以异性材料为基底的亚波长谐振腔结构有效降低了天线体积。这种天线可以用于要求高能量密度的微系统的能量传送。本文中的天线厚度为1.5mm,可工作于10GHz频段。这使得其易于与微系统集成。文中也给出了仿真及实验的结果,并介绍了天线的加工过程。  相似文献   

4.
Microsystem Technologies - In this paper, a new metamaterial-inspired high frequency surface wave antenna is designed. An artificial magnetic conductor surface is introduced into the near field...  相似文献   

5.
The artificially constructed materials based split ring resonators (SRRs) may have exotic electromagnetic properties and have received growing interest in recent years. Moreover, the resonance frequency shift of this material is extraordinarily sensitive to the changes in the capacitance of SRR, which makes SRR suit for microwave thin-film sensing applications. Based on such principle, the tip-shaped SRR metamaterial is presented as thin-film sensor in this paper to reduce device size and resonance frequency as well as to improve the Q-factor. The structure is placed inside an X-band waveguide with dimensions of 22.86 mm × 10.16 mm × 12.8 mm to investigate resonance frequency shift in different cases by numerical method. In contrast to the traditional structures, the tip-shaped design exhibits a miniaturization and sharper dip on resonance in their transmission spectra. Furthermore, the proposed sensor can deliver the sensitivity level of 16.2 MHz/μm and less than a 2 μm nonlinearity error when the uniform benezocyclobutene films from 100 nm to 50 μm thick are coated onto the fixed structure. These results indicate that the proposed thin-film sensor has high sensitivity and low nonlinearity error, and make it great promising application for wireless sensors in future.  相似文献   

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7.
In this article, an RF MEMS capacitive series switch fabricated using printed circuit processing techniques is discussed. Design, modeling, fabrication, and characterization of the CPW series switch are presented. An example CPW series capacitive switch with insertion loss less than 0.5 dB in the frequency range of 13–18 GHz and isolation better than 10 dB up to 18 GHz is discussed. The switch provides a minimum insertion loss of about 0.1 dB at the self‐resonance frequency of 16 GHz and a maximum isolation of about 42 dB at 1 GHz. © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2007.  相似文献   

8.
Microsystem Technologies - In this paper a sensor based on MEMS resonators is proposed for digital microfluidics applications. The sensor system consists of a disk as active area immobilized for...  相似文献   

9.
A compact high‐gain rectangular dielectric resonator antenna (RDRA) using metamaterial (MTM) as superstrate for C‐band applications is proposed in this article. The proposed antenna consists of coaxial‐fed RDRA with 50 unit cells of MTM arranged in 5 × 10 layout as superstrate. Each unit cell is constructed of two parallel eight‐shaped copper strips printed over both faces of a dielectric substrate to provide negative refractive index from 7.3 to 8.1 GHz covering the maximum bandwidth of RDRA. The extracted lumped equivalent circuit model of unit cell of MTM shows concurrence with electromagnetic simulations. The use of MTM superstrate increases the peak gain of the antenna by 89% through simulation and 86% experimentally. The measured results show that the proposed antenna achieves an impedance bandwidth of 16.1% over a band of 7.18‐8.44 GHz, with a peak gain of 14 dBi at 7.8 GHz.  相似文献   

10.
11.
扭转臂杠杆式MEMS膜开关的分析   总被引:1,自引:0,他引:1  
为解决现有的MEMS微波开关的激励电压太高、微连接和膜开关的击穿电压等问题,提出了一种独特结构的MEMS微波开关—扭转臂杠杆式膜开关,并对其进行了理论分析,用conventorware和ADS(ad vanceddesignsystem)软件进行了仿真。由于利用了膜结构以及扭转臂和杠杆的原理,这种独特的MEMS微波开关激励电压比较低、隔离度较高、插入损耗比较低、稳定性好。  相似文献   

12.
Gupta  Navneet  Ashwin  R. 《Microsystem Technologies》2020,26(10):3121-3128
Microsystem Technologies - This paper describes the process of selecting the most optimum Radio Frequency Micro- electro- mechanical-systems (RF-MEMS) switch design using Ashby’s methodology....  相似文献   

13.
Microsystem Technologies - In this review article, the important switch performance parameters such as actuation voltage, capacitance ratio, radio frequency-scattering parameters (RF S-parameters),...  相似文献   

14.
This paper details single-crystalline silicon (SCS) direct contact radio frequency microelectromechanical systems (RF MEMS) switch designed and fabricated using an SiOG (silicon-on-glass) substrate, so as to obtain higher fabrication and performance uniformity compared with a conventional metal switch. The mechanical and electrical performances of the fabricated silicon switch have been tested. In comparison with a conventional metallic MEMS switch, we can obtain higher productivity and uniformity by using SCS, because it has very low stresses and superior thermal characteristics as a structural material of the switch. Also, by using the SiOG substrate instead of an SOI substrate, fabrication cost can be significantly reduced. The proposed switch is fabricated on a coplanar waveguide (CPW) and actuated by electrostatic force. The designed chip size is 1.05 mm/spl times/0.72 mm. Measured pull-in voltage and actuation voltage were 19 V and 26 V, respectively. Eighteen identical switches taken randomly throughout the wafer showed average and standard deviation of the measured pull-in voltage of 19.1 and 1.5 V, respectively. The RF characteristics of the fabricated switch from dc to 30 GHz have been measured. The isolation and insertion loss measured on the four identical samples were -38 to -39 dB and -0.18 to -0.2 dB at 2 GHz, respectively. Forming damping holes on the upper electrode leads to a relatively fast switching speed. Measured ON and OFF time were 25 and 13 /spl mu/s, respectively. In the switch OFF state, self-actuation does not happen up to the input power of 34 dBm. The measured holding power of the fabricated switch was 31 dBm. Stiction problem was not observed after 10/sup 8/ cycles of repeated actuation, but the contact resistance varied about 0.5-1 /spl Omega/ from the initial value.  相似文献   

15.

In this paper, two types of RF MEMS switches namely step structure and Normal beam structure are designed and analyzed using different meander techniques. Three techniques namely plus, zigzag and three-square meander were used to lower the pull-in voltage. The actuating beam is designed with the rectangular perforations affects the performance of a switch by lowering the pull-in voltage, switching speed and results in better isolation. In this paper a comparative analysis is done for all three meander techniques with and without perforations on the beam. Total six structures have been designed with the combination three meanders and two different beam structures. The proposed stepdown structure exhibits high performance characteristics with a very low pull-in voltage of 1.2 V having an airgap of 0.8 µm between the actuation electrodes. The gold is used as beam material and HfO2 as the dielectric material such that the upstate and downstate capacitance is seen as 1.02 fF and 49 fF. The FEM analysis is done to calculate the spring constant and thereby the pull-in voltage and behavior of the switch is studied with various parameters. The switch with a step structure and three-square meander configuration has shown best performance of all by requiring a pull-in voltage of 1.2 V and lower switching time of 0.2 µs. The proposed switch also exhibits good RF performance characteristics with an insertion loss below − 0.07 dB and return loss below − 60 dB over the frequency range of 1–40 GHz. At 28 GHz a high isolation of − 68 dB is exhibited.

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16.
This paper details the novel design of a non-blocking in-plane microelectromechanical systems (MEMS) optical cross connect (OXC) designed and simulated with a new class of material known as the photonic bandgap (PBG) crystal for integration of device technology in optical switching and telecommunication applications. Particularly, silicon is the material of choice being investigated for the PBG MEMS device designed to address the objectives of achieving high optical performance with strategic exploitation for potential applications. Based on the physical and mathematical theories, the PBG and MEMS structures are studied and modelled. Simulations were carried out based on the plane wave method (PWM) and the finite difference time domain (FDTD) method to explore the benefits of integrating photonic crystals with MEMS technology to improve the performance of OXC devices.  相似文献   

17.
18.
提出了一种基于永磁薄膜的新型MEMS磁传感器,磁传感器由MEMS扭摆、CoNiMnP永磁薄膜和差分检测电容等部分组成。分析了磁传感器的磁敏感原理和电容检测原理,提出了器件的结构参数并对器件进行了模态仿真。利用MEMS加工技术成功制作了MEMS磁传感器样品,并进行了测试。测试结果表明:得到的MEMS磁传感器的电容灵敏度可达到27.7 fF/mT,且具有良好的线性度。根据现有的微小电容检测技术,传感器的磁场分辨率可达到36 nT。  相似文献   

19.
根据微型航姿测量系统各传感器的特点,研究出了一种基于磁传感器输出的MEMS陀螺标定方法,并根据MEMS陀螺误差参数模型设计相应的补偿算法,分别对MEMS陀螺的零偏和标度因数误差进行了补偿。与传统标定方法相比,该方法实现简单,适用于现场标定。实验结果表明,该标定方法能够有效地提高MEMS陀螺测量精度,补偿后陀螺在静态条件下2分钟内,俯仰角漂移小于0.035°,倾斜角漂移小于0.15°,航向角的漂移小于0.2°。当陀螺三轴均有角速率输入时,在角速度小于25°/s情况下误差都能保持在±2°以内。  相似文献   

20.

This paper presents beam modeling techniques for maximizing mechanical sensitivity of a butterfly resonator for gyroscopic applications. We investigate the geometric aspects of synchronizing beam that connects the wings of a butterfly resonator. Our results show that geometric variation in the synchronizing beam can have a large effect on the frequency split and sensitivity of the device. The model simulation shows a sensitivity of \( 10^{ - 12} \)\( (m/^\circ /s) \) for a frequency split of 10 Hz resulting from the optimized synchronized beam. Out of plane actuation was developed to drive and sense the resonators displacement. Fabricated butterfly resonators were tested, and the experimental results show a frequency split of 305 Hz and 400 Hz while the model illustrated a split of 195 Hz and 330 Hz respectively. The design and analysis presented in this paper can further aid the development of MEMS butterfly resonators for inertial sensing applications.

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