草酸共沉淀法制备Sm掺杂CeO2粉末研究

采用草酸盐共沉淀法制备Sm2O3掺杂CeO2粉末(SDC),XRD分析结果表明为纯相的Sm2O3掺杂CeO2(SDC)固溶体.采用XRD、SEM、TG/DSC、激光粒度分析仪等对粉末的性质和制备工艺条件进行了研究.通过优化沉淀反应pH值,草酸溶液浓度和沉淀物的煅烧温度等制备工艺条件,得到高烧结活性的SDC粉末,沉淀反应pH值为6～7,草酸浓度为0.3mol·L-1形成的草酸沉淀物在700℃煅烧的氧化物粉末,1350℃烧结可以达到95%的理论密度.     

中低温高电导率CeO2基电解质的研究进展

综述了中低温下高电导率CeO2基电解质材料研究的最新进展,重点评述了双掺杂和纳米复相提升CeO2基电解质材料电导率和抑制电子电导的机理,并指出了未来CeO2基电解质材料的发展方向。     

氧化锆固体电解质的掺杂性能和应用

简述了氧化锆固体电解质的发展和作用机理;氧化锆固体电解质的性质是由掺杂在氧化锆中的金属氧化物的组份和数量来决定的;并介绍了氧化锆固体电解质在工业中的应用.     

掺杂Co3O4对Ce0.8Gd0.2O2-δ固体电解质性能的影响

采用低温燃烧法制备了Ce0.8Gd0.2O2-δ（CGO）及掺杂2.0mol%CoO1.333的CGO（2Co-CGO）,研究了掺杂Co3O4对CGO密度和电导率的影响.实验发现,由于烧结过程中粘性流动烧结的发生,掺杂Co3O4后可在一定的温度范围内使样品致密度提高;经SEM分析,1100℃烧结5h的2Co～CGO晶粒生长完整;与CGO相比较,2Co～CGO在700℃所测电导率略有降低.     

稀土Y元素掺杂对PrBaCo2O5+δ陶瓷热电性能影响

利用传统陶瓷烧结工艺制备出不同浓度稀土Y元素掺杂PrBaCo₂O_5+δ氧化物热电陶瓷,采用XRD和热电材料性能测试系统等设备研究了稀土Y元素掺杂对PrBaCo₂O₅氧化物热电陶瓷晶体结构、热电性能的影响。测试结果表明：Pr_1-xY_xBaCo₂O_5+δ热电陶瓷均为双层钙钛矿结构,没有形成新的杂相;在测试温度范围内,Pr_1-xY_xBaCo₂O_5+δ(x=0,0.25,0.5,0.75)热电陶瓷的Seebeck系数均为正值,表明该材料导电载流子为以空穴,为p型半导体;稀土Y元素掺杂可以明显提高Pr_1-xY_xBaCo₂O_5+δ热电陶瓷的电导率,与电导率相反,稀土元素Y掺杂的导致Pr_1-xY_xBaCo     

EAA高分子固体电解质的制备与性能研究

用ＬｉＣｌＯ４的ＤＭＡ溶液杂ＥＡＡ树脂制得了一种新型高分子固体电解质,运用红外,动态粘弹谱仪、交流阻抗谱分析研究了体系的组成、机械性能和导电性。实验结果表明,ＥＡＡ高分子固体电解质具有两相体系,ＬｉＣｌＯ４选择地溶于羟 基二聚体相,离子导电主要是由体系中无定形相完成的。     

LaF3固体电解质在SO2气氛下的阻抗性能研究

用自制的La1-xCaF3-x单晶和多晶固体电解质，运用阻抗谱技术研究了在0～100℃的范围内，在SO2的气氛下其电导率随温度、气体浓度变化的关系，并求出了相应的电导激活能。结果表明在SO2的气氛下，单晶和多晶的电导率比在空气气氛下有很大的提高，电导率在10^-3～10^-4S／cm的数量级之间。     

双相质子导体BaCe0.9Y0.1O3-δ/La1.95Ca0.05Ce2O7-δ的制备及性能研究

采用固相反应法成功制备了双相质子导体BaCe0.9Y0.1O3-δ/La1.95Ca0.05Ce2O7-δ(7∶3、6∶4、5∶5、4∶6、3∶7)。用X射线衍射仪、扫描电子显微镜分别对样品的物相结构、微观形貌进行了表征,对样品在CO2和沸水中的稳定性进行了研究,并应用IM6e型电化学工作站测定了其在空气、氩气、湿润的4%H2/Ar 3种气氛从450～850℃的电导率。实验结果表明,不同比例复合的样品经1500℃烧结后均形成了明显的双相结构且获得了致密的烧结体。随着样品中La1.95Ca0.05Ce2O7-δ比例的增加,其对CO2和沸水的化学稳定性增加。在所研究的各种比例的复合材料中,BaCe0.9Y0.1O3-δ-La1.95Ca0.05Ce2O7-δ(3∶7)具有最高的电导率,850℃时在湿润的4%H2/Ar气氛下的电导率为2.49×10-2S/cm,电导活化能为1.13eV。     

掺杂不同量Nd2O3对CeO2-ZrO2-Al2O3材料性能的影响

采用共沉淀法制备了一系列Nd2O3含量为0～13wt%的CeO2-ZrO2-A12O3(CZA)复合氧化物,并通过X射线衍射(XRD)、低温N2吸附–脱附、氧脉冲吸附(OSC)、H2–程序升温还原(H2-TPR)及扫描电子显微镜(SEM)等方法对所制备的材料进行了表征.研究结果表明,Nd2O3在CZA固溶体中的溶解限约为10wt%,过量Nd的添加会出现分相形成Nd0.5Ce0.5O1.75氧化物.掺杂适量Nd能有效抑制氧化物晶粒的长大,提高材料的热稳定性和氧化还原性能.Nd2O3的掺杂量为10wt%时,样品的织构稳定性最好,1000℃老化5 h后,比表面积和孔容分别达97.14 m2/g和0.44 mL/g.Nd2O3的掺杂量为7wt%时,样品有高的储氧量,经600℃和1000℃焙烧后储氧量分别为938.01μmol/g和821.72μmol/g;体相氧的移动能力最强,还原性能最佳,老化后还原峰温由465℃升高到483℃.SEM结果表明,所制备的材料均为球形颗粒,Nd2O3的添加可以有效阻止高温焙烧过程中粒子的团聚.     

Gd0.2Ce0.8O2包覆LaNi0.6Fe0.4O3-δ阴极材料抗铬污染性能

应用丝网印刷和共烧结制备LaNi_0.6Fe_0.4O_3-δ (LNF)/Sc_0.1Zr_0.9O_1.95(ScSZ)/LaNi_0.6Fe_0.4O_3-δ 对称电池.以硝酸铈和硝酸钆为原料、柠檬酸为燃料,采用燃烧法制备质量分数为21.3%的Gd_0.2Ce_0.8O₂(GDC)包覆的LNF阴极.电化学阻抗谱(EIS)表明:在750 ℃工作温度下,当无Cr基合金接触时,质量分数21.3%的GDC包覆的LNF经过1 200 h的搁置,其极化电阻由0.13 Ω·cm²增加至0.40 Ω·cm²,而纯LNF经过500 h的搁置,极化电阻由0.70 Ω·cm²增加至2.36 Ω·cm²,GDC的包覆加速了气体/阴极/电解质三相界面反应区的扩散过程,降低了阴极极化电阻;当有Cr基合金接触时,相对于质量分数为21.3%的GDC包覆的LNF阴极,LNF/ScSZ界面处沉积出大量Cr₂O₃,减缓了活性粒子在三相界面处的扩散,故其极化电阻远大于相同条件下质量分数为21.3%的GDC包覆的LNF阴极的极化电阻,质量分数为21.3%的GDC包覆的LNF阴极具有较佳的抗铬污染性能.     

Thermal expansion studies of Gd2Mo3O12 and Gd2W3O12

Simultaneous thermogravimetric/differential thermal analysis of Gd₂Mo₃O₁₂ showed an irreversible phase transition at 1178 K where as Gd₂W₃O₁₂ showed reversible phase transition at 1433 K, which were confirmed by powder X-ray diffraction. The thermal expansion behavior of α-Gd₂Mo₃O₁₂ (room temperature phase), β-Gd₂Mo₃O₁₂ (phase obtained by heating Gd₂Mo₃O₁₂ at 1223 K) and Gd₂W₃O₁₂ have been investigated using high temperature X-ray diffractometer. The cell volume of α-Gd₂Mo₃O₁₂, β-Gd₂Mo₃O₁₂ and Gd₂W₃O₁₂, fit into polynomial expression with respect to temperature, showed positive thermal expansion up to 1073, 1173 and 1173 K, respectively. The average volume expansion coefficients for α-Gd₂Mo₃O₁₂, β-Gd₂Mo₃O₁₂ and Gd₂W₃O₁₂ are 39.52 × 10⁻⁶, 21.23 × 10⁻⁶ and 37.96 × 10⁻⁶ K⁻¹, respectively.     

Thermoluminescence of Tb doped Gd2O2S phosphor

Thermoluminescence (TL) of gadolinium oxysulfide activated with terbium (Gd₂O₂S:Tb) is investigated. The glow curves of Gd₂O₂S:Tb phosphor recorded in the temperature range of 93–500 K with a heating rate of 0.52 K s⁻¹ shows five prominent glow peaks. Comparison of the glow curves exhibited by different samples prepared with varying firing conditions reveals some interesting results. In this phosphor capture centers are mainly formed due to variable valency activators, trace impurities and point defects, which create defects in the sub-lattice. The observed TL spectra suggest a multiplicity of electron and hole traps. The main peak that observed at 150 K is attributed to point defects arising out of sulfur vacancies. These vacancies give rise to electron traps, which are found to be associated with terbium centers. This is confirmed by the monochromatic glow curves observed at wavelengths corresponding to the characteristic terbium emission (⁵D₃–⁷F_n, ⁵D₄–⁷F_n). Removal of this glow peak under H₂S firing indicates the localized character of the concerned centers.     

Y2O3与Gd2O3共掺杂SrZrO3热障涂层材料的热物理性能

采用固相反应法合成了5mol%Y2O3与5mol%Gd2O3共掺杂SrZrO3(Sr(Zr0.9Y0.05Gd0.05)O2.95,SZYG)粉末.采用X射线衍射(XRD)和差示扫描量热仪(DSC)分别研究了SZYG粉末在1450℃长期热处理后以及200~1400℃范围内的相稳定性.采用高温热膨胀仪测量了SZYG块材的热膨胀系数,结果表明:通过Y2O3与Gd2O3共掺杂改性可以明显抑制SrZrO3的相转变.在1000℃下SZYG块材的热导率是～1.36 W/(m.K),与SrZrO3和8YSZ块材相比降低~35%SZYG分别与8YSZ和Al2O3在1250℃热处理24 h表现出很好的化学相容性.     

Optimization of spectroscopic properties of Yb-doped refractory sesquioxides: cubic Y2O3, Lu2O3 and monoclinic Gd2O3

Absorption and emission spectra are given for Yb³⁺-doped Y₂O₃, Lu₂O₃ and Gd₂O₃ at room temperature. Y₂O₃ and Lu₂O₃ as close cubic matrices, show Yb³⁺ similar spectra different of Yb³⁺ in Gd₂O₃ monoclinic structure. Here, we use a new method to study and optimize the main spectroscopic properties with only one concentration gradient sample. Finally, assignments of Yb³⁺ Stark levels and Raman vibrations in Y₂O₃, Lu₂O₃ and Gd₂O₃ single crystal are given.     

The vibrational spectra of the intermediate compounds in the system Y2O3P2O5 and Gd2O3P2O5

The Infrared- and Raman-spectra of the intermediate compounds were studied for clues to their structural behavior as related to luminescence response. It was found that the degree of polymerization of PO₄ polyhedra increases in the phosphate-rich region and perhaps in the RE-oxide-rich region as well which was evident from the shift of stretching bands towards the higher energy side. Except in orthophosphates, the PO₄ polyhedra occupy more than one non-equivalent lattice site in all the phosphates.     

Phase equilibrium diagram for the system Gd2O3-MoO3

Phase equilibria have been established in the binary system Gd₂O₃MoO₃ including Gd₂(MoO₄)₃ with ferroelectricity and ferroelasticity below 159°C, by means of differential thermal analysis and X-ray powder diffraction techniques. It is shown that Gd₂(MoO₄)₃ has no solubility of other compounds in this system and melts congruently on its stoichiometric composition. Three distinct intermediate compounds were found. Gd₂O₃.6MoO₃ and Gd₂O₃.4MoO₃ are formed by a peritectic reaction at 730°C and 825°C, respectively. The remaining compound Gd₂O₃.MoO₃ with the structure closely related to Eu₂O₃.MoO₃ does not decompose below 1400°C.     

Ti-doped Gd2O3 sensing membrane for electrolyte-insulator-semiconductor pH sensor

The paper reports Ti was added to Gd₂O₃ as pH sensing membrane on silicon combined with proper rapid thermal annealing for the electrolyte-insulator- semiconductor application. It can be found that the high-k Gd₂TiO₅ sensing membrane annealed at 800 °C could obtain high sensitivity, high linearity, low hysteresis voltage, and low drift rate due to improvements of crystalline structures. The high-k Gd₂TiO₅ sensing membrane shows great promise for future bio-medical device applications.     

Preparation and studies of Eu and Tb co-doped Gd2O3 and Y2O3 sol-gel scintillating films

Eu³⁺ (2.5 at.%) and Tb³⁺ (0.005-0.01 at.%) co-doped gadolinium and yttrium oxide (Gd₂O₃ and Y₂O₃) powders and films have been prepared using the sol-gel process. High density and optical quality thin films were prepared with the dip-coating technique. Gadolinium (III) 2,4-pentadionate and yttrium (III) 2,4-pentadionate were used as precursors, and europium and terbium in their nitrate forms were used as doping agents. Chemical and structural analyses (infrared spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy) were conducted on both sol-gel precursor powders and dip-coated films. The morphology of thin films heat-treated at 700 °C was studied by means of atomic force microscopy. It was shown that the highly dense and very smooth films had a root mean roughness (RMS) of 2 nm ± 0.2 (A = 0.0075 Tb³⁺) and 24 nm ± 3.0 (B = 0.01 Tb³⁺). After treatment at 700 °C, the crystallized films were in the cubic phase and presented a polycrystalline structure made up of randomly oriented crystallites with grain sizes varying from 20 to 60 nm. The X-ray induced emission spectra of Eu³⁺- and Tb³⁺-doped Gd₂O₃ and Y₂O₃ powders showed that Tb³⁺ contents of 0.005, 0.0075 and 0.01 at.% affected their optical properties. Lower Tb³⁺ concentrations (down to 0.005 at.%) in both systems enhanced the light yield.     

Self-radiation damage in Gd2Ti2O7

The effects of self-radiation damage from alpha decay in Gd₂Ti₂O₇ were investigated by studying specimens doped with ²⁴⁴Cm. The radiation-induced microstructure consists of individual amorphous tracks from both the alpha-recoil particles and the spontaneous fission fragments. The eventual overlap of the tracks at higher doses leads to a completely amorphous state. The self-radiation damage increases the volume, dissolution rate, and fracture toughness. Electron-beam recrystallization of the amorphous state results in the formation of fine microcrystallites on the order of 0.05 μm in size.