Preparation and electrical properties of SrTiO3 ceramics doped with M2O3–PbO–CuO

SrTiO₃ dielectric ceramics were fabricated in air by using M₂O₃–CuO–PbO as dopants (M=Sm,Nd,La,Yb). The obtained ceramics exhibited a high dielectric constant (₂₅>4880) with stable temperature characteristics. With doping the rare-earth ions from Sm → Nd → La → Yb, the corresponding dielectric constant regularly decreased. The investigation of microstructure showed that Yb additives benefited to the grain growth and CuO additives mainly segregated at the grain boundaries to form the insulation layers. According to the results, the conduction mechanism of SrTiO₃–M₂O₃–CuO–PbO system was discussed.     

Schottky barrier height of a new ohmic contact NiSi2 to n-type 6H-SiC

We present a new ohmic contact material NiSi₂ to n-type 6H-SiC with a low specific contact resistance. NiSi₂ films are prepared by annealing the Ni and Si films separately deposited on (0 0 0 1)-oriented 6H-SiC substrates with carrier concentrations (n) ranging from 5.8×10¹⁶ to 2.5×10¹⁹ cm⁻³. The deposited films are annealed at 900 °C for 10 min in a flow of Ar gas containing 5 vol.% H₂ gas. The specific contact resistance of NiSi₂ contact exponentially decreases with increasing carrier concentrations of substrates. NiSi₂ contacts formed on the substrates with n=2.5×10¹⁹ cm⁻³ show a relatively low specific contact resistance with 3.6×10⁻⁶ Ω cm². Schottky barrier height of NiSi₂ to n-type 6H-SiC is estimated to be 0.40±0.02 eV using a theoretical relationship for the carrier concentration dependence of the specific contact resistance.     

CoSi2 ohmic contacts to n-type 6H---SiC

Cobalt disilicide (CoSi₂) ohmic contacts possessing low specific contact resistivity (_c < 3.0 ± 0.4 × 10⁻⁵ ωcm²) to n-type 6H---SiC are reported. The contacts were fabricated via sequential electron-beam evaporation of Co and Si layers followed by a two-step vacuum anealing process at 500 and 900°C. Stochiometry of the contact so formed was confirmed by Rutherford backscattering spectrometry and X-ray diffraction. Specific contact resistivities were obtained via current-voltage (I-V) analysis at temperatures ranging from 25 to 500°C. _c is compared as a function of carrier concentration, current density, temperature and time at elevated temperature.     

LaNiO3: a promising material for contact with YBa2Cu3O7-x thin films

Epitaxial LaNiO₃ metallic oxide thin films have been grown on c-axis oriented YBa₂Cu₃O_7-δ thin films on LaAlO₃ substrates by pulsed laser deposition technique and the interface formed between the two films has been examined by measuring the contact conductance of the same. The specific contact conductance of the interface measured using a modified four probe method was found to be 1.4 to 6×10⁴ ohm^-1 cm^-2 at 77 K. There are indications that contact conductance can be brought closer to that obtained for noble metal-YBCO interface     

Emission cross sections and spectroscopy of Ho3+ laserchannels in KGd(WO4)2 single crystal

The spectroscopic properties of Ho³⁺ laser channels in KGd(WO₄)₂ crystals have been investigated using optical absorption, photoluminescence, and lifetime measurements. The radiative lifetimes of Ho³⁺ have been calculated through a Judd-Ofelt (JO) formalism using 300-K optical absorption results. The JO parameters obtained were Ω₂=15.35×10^-20 cm², Ω ₄=3.79×10^-20 cm², Ω₆ =1.69×10^-20 cm². The 7-300-K lifetimes obtained in diluted (8·10¹⁸ cm^-3) KGW:0.1% Ho samples are: τ(⁵F₃)≈0.9 μs, τ( ⁵S₂)=19-3.6 μs, and τ(⁵F₅ )≈1.1 μs. For Ho concentrations below 1.5×10²⁰ cm^-3, multiphonon emission is the main source of non radiative losses, and the temperature independent multiphonon probability in KGW is found to follow the energy gap law τ_ph ^-1(0)=βexp(-αΔE), where β=1.4×10^-7 s^-1, and α=1.4×10³ cm. Above this holmium concentration, energy transfer between Ho impurities also contributes to the losses. The spectral distributions of the Ho³⁺ emission cross section σ_EM for several laser channels are calculated in σ- and π-polarized configurations. The peak a σ_EM values achieved for transitions to the ⁵I₈ level are ≈2×10^-20 cm² in the σ-polarized configuration, and three main lasing peaks at 2.02, 2.05, and 2.07 μm are envisaged inside the ⁵I₇→⁵I₈ channel     

The exact calculation of the electric field and potential at the metallurgical boundary of abrupt n1−n2 homojunctions

Exact analytical expressions for the potential and electric field at the metallurgical boundary of abrupt n₁−n₂ homojunctions in function of the donor concentrations are given. The graph of the potential drop over the higher doped n₂ region vs the impurity concentration ratio results in a universal curve when the majority carrier densities in both regions are much larger than the intrinsic carrier density. It is also demonstrated that the potential drop over the higher doped region can be approximated by the value of kT/q as soon as the impurity concentration ratio is larger than 10².     

LiCaAlF6:Cr3+: a promising new solid-statelaser material

LiCaAlF₆:Cr³⁺ (Cr³⁺:LiCAF) exhibits an intrinsic (extrapolated maximum) slope efficiency of 67%. For comparison, the intrinsic slope efficiencies of BeAl₂O ₄:Cr³⁺ (alexandrite), Na₃Ga₂Li₃F₁₂:Cr³⁺ and ScBO₃:Cr³⁺ were found to be 65, 28, and 26%, respectively. The tuning range of LiCaAlF₆:Cr³⁺ was determined to be at least 720-840 nm. The conventional spectroscopic properties, such as the absorption, emission, and emission lifetimes as a function of temperature, are reported as well     

The first-order asymptotic of waiting times with distortion betweenstationary processes

Let X and Y be two independent stationary processes on general metric spaces, with distributions P and Q, respectively. The first-order asymptotic of the waiting time W_n(D) between X and Y, allowing distortion, is established in the presence of one-sided ψ-mixing conditions for Y. With probability one, n^-1log W _n(D) has the same limit as -n^-1logQ(B(X₁ⁿ, D)), where Q(B(X₁ ⁿ, D)) is the Q-measure of the D-ball around (X₁ ,...,X_n), with respect to a given distortion measure. Large deviations techniques are used to get the convergence of -n^-1 log Q(B(X₁ⁿ, D)). First, a sequence of functions R_n in terms of the marginal distributions of X₁ⁿ and Y₁ⁿ as well as D are constructed and demonstrated to converge to a function R(P, Q, D). The functions R_n and R(P, Q, D) are different from rate distortion functions. Then -n^-1logQ(B(X₁ⁿ , D)) is shown to converge to R(P, Q, D) with probability one     

Ba原子6s2 1S0 - 6s6p3P1跃迁Hanle效应实验研究

Ba原子是光频标的候选者之一,对其进行有效的激光冷却与囚禁需要相关能级的寿命和跃迁几率的信息。Ba原子激发态6s6p 3P1能级在激光冷却实验中很重要,通过Hanle效应实验测量了这一能级的寿命和自发辐射率,从理论和实验上研究了探测激光有限线宽和光强对Ba原子基态6s2 1S0与激发态6s6p 3P1之间跃迁（波长791 nm）的Hanle效应的荧光信号的影响。在考虑了激光线宽和光强因素后所得到的激发态6s6p 3P1的能级寿命和自发辐射率与其他方法给出的结果很好符合。     

Optoelectronic properties of Zn0.52Se0.48/Si Schottky diodes

Zn_0.52Se_0.48/Si Schottky diodes are fabricated by depositing zinc selenide (Zn_0.52Se_0.48) thin films onto Si(1 0 0) substrates by vacuum evaporation technique. Rutherford backscattering spectrometry (RBS) analysis shows that the deposited films are nearly stoichiometric in nature. X-ray diffractogram of the films reveals the preferential orientation of the films along (1 1 1) direction. Structural parameters such as crystallite size (D), dislocation density (δ), strain (ε), and the lattice parameter are calculated as 29.13 nm, 1.187 × 10⁻¹⁵ lin/m², 1.354 × 10⁻³ lin⁻² m⁻⁴ and 5.676 × 10⁻¹⁰ m respectively. From the I–V measurements on the Zn_0.52Se_0.48/p-Si Schottky diodes, ideality and diode rectification factors are evaluated, as 1.749 (305 K) and 1.04 × 10⁴ (305 K) respectively. The built-in potential, effective carrier concentration (N_A) and barrier height were also evaluated from C–V measurement, which are found to be 1.02 V, 5.907 × 10¹⁵ cm⁻³ and 1.359 eV respectively.     

Characteristics of strained In0.65Ga0.35As/In0.52Al0.48As HEMT withoptimized transport parameters

The DC and microwave performance of a strained In₀.₆₅Ga₀.₃₅As/In₀ .₅₂A1₀.₄₈As HEMT (high-electron-mobility transistors) is reported. Its design is based on theoretical and experimental studies including low- and high-field transport characterization of heterostructures with different strains. The intrinsic DC transconductance and cutoff frequence of 1.4-μm-long gate HEMTs are 574 mS/mm and 38.6 GHz, respectively. The increased indium (In) composition in the channel enhances the drift velocity from 1.35×10⁷ to 1.55×10⁷ cm/s at 300 K     

Stability of hydrogen in ScAlMgO4

Hydrogen as ²H was incorporated into ScAlMgO₄ by both ion implantation and by exposure to a plasma at 250°C. In the implanted material diffusion begins at 500°C and most of the hydrogen is lost by ≤ 750°C. This thermal stability for hydrogen retention is considerably lower than for other substrate materials for GaN epilayer growth, such as Al₂O₃ and SiC. There is minimal permeation of ²H from a plasma at 250°C (D_H ≤ 5 × 10⁻¹⁶ cm² s⁻¹) in ScAlMgO₄, and thus unintentional hydrogen incorporation into GaN overlayers should be minimal at typical growth temperatures.     

Germanium MOSFETs With CeO2/HfO2/ TiN Gate Stacks

Long-channel Ge pMOSFETs and nMOSFETs were fabricated with high-kappa CeO₂/HfO₂/TiN gate stacks. CeO₂ was found to provide effective passivation of the Ge surface, with low diode surface leakage currents. The pMOSFETs showed a large I _ON/I_OFF ratio of 10⁶, a subthreshold slope of 107 mV/dec, and a peak mobility of approximately 90 cm² /Vmiddots at 0.25 MV/cm. The nMOSFET performance was compromised by poor junction formation and demonstrated a peak mobility of only ~3 cm²/Vmiddots but did show an encouraging I_ON/I _OFF ratio of 10⁵ and a subthreshold slope of 85 mV/dec     

Bi1.5Zn1.0 Nb1.5O7栅绝缘层的SiO2修饰对ZnO-TFTs性能的影响

具有高介电常数的栅绝缘层材料存在某种极化及耦合作用,使得ZnO-TFTs具有高的界面费米能级钉扎效应、大的电容耦合效应和低的载流子迁移率.为了解决这些问题,本文提出了一种使用SiO₂修饰的Bi_1.5Zn_1.0Nb_1.5O₇作为栅绝缘层的ZnO-TFTs结构,分析了SiO₂修饰对栅绝缘层和ZnO-TFTs性能的影响.结果表明,使用SiO₂修饰后,栅绝缘层和ZnO-TFTs的性能得到显著提高,使得ZnO-TFTs在下一代显示领域中具有非常广泛的应用前景.栅绝缘层的漏电流密度从4.5×10^-5A/cm²降低到7.7×10^-7A/cm²,粗糙度从4.52nm降低到3.74nm,ZnO-TFTs的亚阈值摆幅从10V/dec降低到2.81V/dec,界面态密度从8×10¹³cm^-2降低到9×10¹²cm^-2,迁移率从0.001cm²/（V·s）升高到0.159cm²/（V·s）.     

High-Q LaAlO3 dielectric resonator shielded byYBCO-films

We have investigated a dielectric resonator consisting of a single crystalline LaAlO₃-cylinder shielded by a cylindrically shaped copper cavity with endplates made from epitaxial films of YBa₂Cu₃O₇ or niobium. For YBa₂ Cu₃O₇ films unloaded quality factors Q₀ of 4.5·10⁵ at 10 K and 1.3·10⁵ at 77 K were achieved at 11.6 GHz using a compact shielding cavity with a diameter of 15 mm and a height of 3.8 mm. The loss contributions of the dielectric resonator, the normal conducting cylinder wall, and the superconducting endplates, with one of them being separated by a small distance h from the dielectric cylinder, were calculated by modeling the electromagnetic fields of the TE_0νμ-modes. The dielectric loss tangent of the LaAlO ₃-cylinders was found to be 10^-6 at 4.3 K and f=11.6 GHz and to increase slightly with temperature. Moreover, the calculations indicate the tunability of the resonance frequency by changing h over a range of 1 GHz without significant degradation of Q ₀. These resonators are considered to be useful devices for stable oscillators and narrowband filters     

Oxidized Ta2O5/Si3N4dielectric films on poly-crystalline Si for dRAMs

A dielectric film technology characterized by a novel multilayer structure formed by oxidation of Ta₂O₅/Si₃ N₄ films on polysilicon has been developed to realize high-density dRAMs. The dry oxidation of the Ta₂O₅/Si₃N₄ layers was performed at temperatures higher than 900°C. This film has a capacitance per unit area from 5.5 to 6.0 fF/ μm², which is equivalent to that of a 6.0- to 6.5-nm-thick SiO₂. The leakage current at an effective electric field of 5 MV/cm is less than 10^-9 A/cm². Under such an electric field, the extrapolated time to failure for 50% cumulative failure can be as high as 1000 years     

H2/O2 plasma on polysilicon thin-filmtransistor

It is reported for that H₂ plasma followed by O₂ plasma is more effective for passivating grain boundary states in polysilicon thin film. Polysilicon thin-film transistors (TFTs) made after H₂/O₂ plasma treatment can exhibit a turn-on threshold voltage of -0.1 V, a subthreshold swing of 0.154 V/decade, an ON/OFF current ratio I_on/I_off over 1×10⁸, and an electron mobility of 40.2 cm² /V-s     

Universal schemes for learning the best nonlinear predictor giventhe infinite past and side information

Let {X_t} be a real-valued time series. The best nonlinear predictor of X₀ given the infinite past X_-∞^-1 in the least squares sense, is equal to the conditional mean E{X₀|X_-∞^-1}. Previously, it has been shown that certain predictors based on growing segments of past observations converge to the best predictor given the infinite past whenever {X_t} is a stationary process with values in a bounded interval. The present paper deals with universal prediction schemes for stationary processes with finite mean. We also discuss universal schemes for learning the conditional mean E{X₀|X _-∞^-1Y_-∞^-1Y₀ } from past observations of a stationary pair process {(X_t , Y_t)}, and schemes for learning the repression function m(y)=E{X|Y=y} from independent samples of (X, Y)     

Estimation for the capture cross-sections of surface state on p-Si surface by photovoltaic method

A new method which can nondestructively measure the surface-state density (SSD) D_s and estimate the capture cross-sections (CCS) of surface state σ⁰_n and σ⁻_p on surface of p-type semiconductor crystals is proposed. This method is based on the photovoltage measurements at various temperatures. The photovoltage experiment was carried out with a (1 1 1) p-type Si single crystal (N_A=4.8×10¹⁴ cm ⁻³). Owing to that the surface barrier height φ_BP=0.6421 V and the surface-recombination velocity s_n=9.6×10³ cm s⁻¹ of this sample can be determined, the SSD D_s=1.2×10¹¹ cm⁻² eV⁻¹ can therefore be obtained, furthermore CCS σ⁰_n≈5×10⁻¹⁴ cm² and σ⁻_p≈2×10⁻¹⁰ cm² can also be estimated. These results are consistent with that of related reports obtained by other methods.     

Good High-Temperature Stability of TiN/ Al2O3/WN/TiN Capacitors

For the first time, good thermal stability up to an annealing temperature of 1000degC has been demonstrated for a new TiN/Al₂O₃/WN/TiN capacitor structure. Good electrical performance has been achieved for the proposed layer structure, including a high dielectric constant of ~ 10, low leakage current of 1.2times10^-7 A/cm² at 1 V, and excellent reliability. A thin WN layer was incorporated into the metal-insulator-metal capacitor between the bottom TiN electrode and the Al₂O₃ dielectric suppressing of interfacial-layer formation at Al₂ O₃/TiN interfaces and resulting in a smoother Al₂O₃/TiN interface. This new layer structure is very attractive for deep-trench capacitor applications in DRAM technologies beyond 50 nm.