Sb掺杂ZnO薄膜电学、光学性能研究

采用氧等离子体辅助脉冲激光沉积（PLD）法,在n-Si（001）衬底上制备出性能良好的Sb掺杂p型ZnO薄膜,其电阻率为44.18Ω.cm,空穴浓度为3.78×1016cm-3,霍尔迁移率为3.74 cm2V-1s-1,ZnO薄膜在室温下放置9个月,其p型性能基本保持不变。Ⅰ-V曲线显示良好的整流特性,进一步证明了Sb掺杂ZnO薄膜的p型导电性。进行低温光致发光（PL）谱测试,确认Sb掺杂p型ZnO薄膜存在2种受主态,其受主能级分别为161和336 meV,分析认为336 meV深受主为Zn空位;161 meV浅受主为由于Sb掺杂产生的SbZn-2VZn缺陷复合体。     

退火气氛对溶胶-凝胶法制备铝掺杂氧化锌薄膜光电性能的影响

为研究退火气氛对氧化锌(AZO)薄膜光电性能的影响,采用溶胶-凝胶法在石英基片上制备铝掺杂AZO薄膜。利用X射线衍射、场发射电子扫描显微镜对薄膜的物相结构和形貌进行表征;采用霍尔效应测试仪、紫外-可见-红外分光光度计分析AZO薄膜的光电性能。结果表明:退火气氛对AZO薄膜电导的影响机制有明显差异。相较于空气中退火,在N2中退火的AZO薄膜中载流子迁移率变化不明显,薄膜电导性能改善得益于氧空位增加引起的载流子浓度提高;而在95N2/5H2混合气中退火,AZO薄膜中氧空位浓度增加,晶界吸附氧脱附,晶界势垒降低,从而造成载流子浓度和迁移率明显增加,薄膜电阻率为2. 09×10-3Ω·cm。AZO薄膜的透光率在波长400～800 nm的可见光内高于85%。     

铝掺杂量对于铝锌氧薄膜晶体管的电学性能的影响

本文利用磁控溅射法在硅片上制备了不同铝掺杂量的铝锌氧薄膜晶体管,并研究了铝掺杂量对铝锌氧薄膜晶体管电学性能的影响,可以看出不同铝掺杂量对于薄膜晶体管电学性能存在影响,当Al掺杂功率为15 W时,薄膜晶体管开关比达到5.7×105,亚阈值摆幅为3 V·dec-1,阈值电压3 V,迁移率1.6 cm2.(V·s)-1.     

掺杂ZnO薄膜的微结构及电学特性

用(ZnO)1－x(Al2O3)xx=w(Al2O3)=0、0.01、0.02、0.05）陶瓷靶材为原料，通过电子束反应蒸发生长了非故意掺杂及Al掺杂的ZnO（Al掺杂ZnO）薄膜.采用X射线衍射、Raman散射及霍尔效应技术研究了薄膜的晶体微结构及电学特性.结果表明，由（ZnO)1-x(Al2O3)x(x ≤ 0.02)的靶材生长得到的Al掺杂ZnO薄膜仍具有高度c-轴取向的纤锌矿晶体结构，但随着薄膜中Al掺入量的增加，其c-轴取向性有所退化；Raman光谱测量表明，Al掺杂ZnO薄膜的本征内应力随着Al掺入量的增加而增大，（ZnO)0.98(Al2O3)0.02薄膜中Al和Zn的原子个数比为6∶94，此时薄膜的内应力已接近饱和；Al掺杂ZnO薄膜的电阻率随着Al掺入量的增加呈现先减小后增大的特征，(ZnO)0.98(Al2O3)0.02薄膜具有最小的电阻率（7.85×10－4 Ω·cm），这归因于该类薄膜同时具有高电子浓度（1.32×1021 cm-3）和较高的电子迁移率（6.02 cm2/(V·s)）.     

氧化锌薄膜的p型掺杂研究现状

ZnO薄膜作为一种多用途的光电材料，一直受到国内外学术界的广泛关注。为了开发ZnO短波长光电器件，首要解决的关键问题是氧化锌的P型掺杂。综述了目前国际上常用的氧化锌P型掺杂方法，对不同方法制备的P型ZnO薄膜的性能进行了分析比较。     

氧化锌薄膜的p型掺杂研究现状

ZnO薄膜作为一种多用途的光电材料,一直受到国内外学术界的广泛关注。为了开发ZnO短波长光电器件,首要解决的 关键问题是氧化锌的p型掺杂。综述了目前国际上常用的氧化锌p型掺杂方法,对不同方法制备的p型ZnO薄膜的性能进行了 分析比较。     

激光沉积法制备近红外高屏蔽性能透明薄膜

以金属锌、铁、银为靶材,用准分子脉冲激光沉积法（PLD）,在石英玻璃基片上制备了锌、铁、银的金属氧化物多层薄膜.XRD和AFM研究结果表明薄膜的结晶度很好,晶粒尺寸在30～50 nm,成膜均匀致密,光滑平整;经紫外和红外光谱发现：Ag/Fe/Zn氧化物多层膜反射率小于15%,是一种低反射薄膜,其在可见光区的透过率约为50%（浅蓝灰色）,对紫外的阻隔率大于90%,对近红外的阻隔率大于70%.     

氧化锌薄膜的阴极电沉积法制备及性能

以硝酸锌溶液为沉积液,采用阴极电沉积技术在ITO导电玻璃基片上制备ZnO薄膜．分析了Zn（NO3）2体系ZnO的电化学沉积机理及反应过程,考察了沉积电位和Zn（NO3）2浓度对沉积过程、薄膜结构及其性能的影响结果表明：沉积电位和Zn（NO3）2浓度对薄膜形貌都有着显著的影响,沉积速率随沉积电位和Zn（NO3）2浓度的增加而增大;当沉积电位和Zn（NO3）2浓度较小时,薄膜粒径小,透光性相对较高．     

非晶态Te81Ge15Sb4薄膜材料的电学性能

对用熔体淬火再真空蒸发所制备的非晶态Ｔｅ８１Ｇｅ１５Ｓｂ４薄膜的伏－安特性，直流电导率及玻璃转变温度等性能进行了研究。结果表明，这种材料具有较好的开关效应及较高的热稳定性，可用作开关器件等。     

掺杂对SnO2薄膜性能影响研究

SnO2薄膜具有良好的光学特性,优良的气敏特性越来越受到人们的普遍重视,本文就各种掺杂对SnO2薄膜性能的影响进行了综合评述,并探讨了掺杂作用机理。     

Investigations of ZnO thin films deposited by a reactive pulsed laser ablation

Highly transparent ZnO thin films were deposited at different substrate temperatures by pulsed laser deposition in an oxygen atmosphere. The thin films were characterized by various techniques including X-ray diffraction, scanning electron microscopy, optical absorption, and photoluminescence. We demonstrated that oriented wurtzite ZnO thin films could be deposited at room temperature using a high purity zinc target. Variable temperature photoluminescence revealed new characteristics in the band edge emission. The underlying mechanism for the observed phenomena was also discussed.     

Preparation and Properties of IrO2 Thin Films Grown by Pulsed Laser Deposition Technique

Highly conductive IrO2 thin films were prepared on Si （100） substrates by means of pulsed laser deposition technique from an iridium metal target in an oxygen ambient atmosphere. Emphasis was put on the effect of oxygen pressure and substrate temperature on the structure, morphology and resistivity of IrO2 films. It was found that the above properties were strongly dependent on the oxygen pressure and substrate temperature. At 20 Pa oxygen ambient pressure, pure polycrystalline IrO2 thin films were obtained at substrate temperature in the 300-500℃ range with the preferential growth orientation of IrO2 films changed with the substrate temperature. IrO2 films exhibited a uniform and densely packed granular morphology with an average feature size increasing with the substrate temperature. The room-temperature resistivity variations of IrO2 films correlated well with the corresponding film morphology changes. IrO2 films with the minimum resistivity of （42 ±6）μΩ·cm was obtained at 500℃.     

生长温度对掺钛氧化锌薄膜光学性质的影响

以氧化锌钛陶瓷靶作为溅射源,采用磁控溅射技术在玻璃衬底上制备了掺钛氧化锌(TZO)透明导电薄膜,通过X射线衍射仪和分光光度计测试表征以及全光谱拟合法分析,研究了生长温度对TZO薄膜晶体结构和光学性质的影响.结果表明:所有TZO样品均为六角纤锌矿结构,并具有(002)择优取向,生长温度对薄膜晶粒尺寸和光学透射率的影响较明显,而对折射率、消光系数和光学能隙的影响较小.当生长温度为200℃时,TZO薄膜的晶粒尺寸最大,可见光范围平均透射率(含衬底)为76.1%,对应的直接光学能隙为3.45 eV.     

ZnO紫外光电导型探测器的制备与研究

通过在MOCVD方法生长的ZnO薄膜上沉积Al/Au叉指状电极制得ZnO紫外光电导型探测器,对该探测器的欧姆接触特性、光电响应特性以及光谱响应特性进行了测试研究,并根据AES、XPS分析结果对测试结果进行了理论分析.结果表明,即使在未进行合金工艺的情况下,非合金Al/ZnO金属体系与n型ZnO也可以形成良好的欧姆接触,正向偏压下,探测器的暗电流与光电流随外加偏压线性增加;探测器对紫外光潜具有明显的响应,其响应截止波长为368nm.XPS分析表明,在ZnO薄膜表面存在着一定的O空位和Zn间隙,非化学计量的O与Zn之比对器件的响应时间有影响.     

沉积温度对ZnO薄膜结构形貌及光学性能的影响

以Zn(NO3)2·6H2O为前驱体,采用超声喷雾热解法在玻璃衬底上沉积了ZnO薄膜,采用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外光谱仪(UVS)等对所得ZnO薄膜进行表征,研究了沉积温度对ZnO薄膜的结构、微观形貌及光学性能的影响。结果表明,沉积温度为500℃时所制备的薄膜质量最佳,形成的是六角纤锌矿ZnO结构,且薄膜沿(002)晶面择优取向生长显著,薄膜表面光滑致密,晶粒细小均匀,尺寸在50~60nm。薄膜表现出良好的光学性能,可见光透过率可达87%。     

Effect of Na concentrations on microstructure and optical properties of ZnO films

Na-doped ZnO thin films were deposited on the glass substrates using sol-gel method. The effect of Na concentrations on the structural and optical properties of ZnO films was studied. As Na concentration increases from 0.0 at% to 16.0 at%, preferential c-axis orientation becomes more and more obvious, and the intensity of the diffraction peaks from (103) increases. The optical band gap Eg value increases from 3.261 to 3.286 eV first and then decreases as Na concentration increases from 0.0 to 2.0 at% and th...     

Characterization of structural and electrical properties of ZnO tetrapods

ZnO tetrapods were synthesized by a typical thermal vapor-solid deposition method in a horizontal tube furnace.Structural characterization was carried out by transmission electron microscopy (TEM) and select-area electron diffraction (SAED),which shows the presence of zinc blende nucleus in the center of tetrapods while the four branches taking hexagonal wurtzite structure.The electrical transport property of ZnO tetrapods was investigated through an in-situ nanoprobe system.The three branches of a tetrapod...     

K掺杂p型ZnO薄膜的制备及其表征

以ⅠA族元素钾(K)作为掺杂剂,利用射频磁控溅射沉积技术,在单晶Si(111)衬底上成功生长了K:p-ZnO薄膜．采用Hall测试仪、X射线衍射、原子力显微镜和X射线光电谱等测试分析技术,对其结构和电学性能进行了研究．结果显示,该p-ZnO薄膜呈现良好的(002)单重择优生长特性,当衬底温度为500℃,氧分压为30％时表面粗糙度仅为89.05nm,其相应的空穴浓度为5.45×10¹⁷/cm³,迁移率为1.96cm^2/(V·s),电阻率为5.91Ω·cm,具有较好的结晶质量和电性能．     

Structural,optical and electrical properties of Li-doped ZnO thin films influenced by annealing temperature

Li-doped Zn O thin films had been grown by radio frequency magnetron sputtering and then annealed under various annealing temperatures. The characteristics of Zn O films were examined by XRD, FESEM, Hall measurement and optical transmission spectra. Results showed that p type conduction was observed in Lidoped Zn O films annealed at 500-600 ℃ and the p type Zn O films possessed a good crystalline with c-axis orientation, dense surface, and average transmission of about 85% in visible spectral region.