Low‐Temperature Sintering of Bi0.5(Na,K)0.5TiO3 for Multilayer Ceramic Actuators

We investigated the influence of CuO amount (0.5–3.0 mol%), sintering temperature (900°C–1000°C), and sintering time (2–6 h) on the low‐temperature sintering behavior of CuO‐added Bi_0.5(Na_0.78K_0.22)_0.5TiO₃ (BNKT22) ceramics. Normalized strain (S_max/E_max), piezoelectric coefficient (d₃₃), and remanent polarization (P_r) of 1.0 mol% CuO‐added BNKT22 ceramics sintered at 950°C for 4 h was 280 pm/V, 180 pC/N, and 28 μC/cm², respectively. These values are similar to those of pure BNKT22 ceramics sintered at 1150°C. In addition, we investigated the performance of multilayer ceramic actuators made from CuO‐added BNKT22 in acoustic sound speaker devices. A prototype sound speaker device showed similar output sound pressure levels as a Pb(Zr,Ti)O₃‐based device in the frequency range 0.66–20 kHz. This result highlights the feasibility of using low‐cost multilayer ceramic devices made of lead‐free BNKT‐based piezoelectric materials in sound speaker devices.     

Large Piezoresponse and Ferroelectric Properties of (Bi0.5Na0.5)TiO3–(Bi0.5K0.5)TiO3–Bi(Mg0.5Ti0.5)O3 Thin Films Prepared by Chemical Solution Deposition

Bulk ceramic 72.5 mol%(Bi_0.5Na_0.5)TiO₃–22.5 mol%(Bi_0.5K_0.5)TiO₃–5 mol%Bi(Mg_0.5Ti_0.5)O₃ (BNT–BKT–BMgT) has previously been reported to show a large high‐field piezoelectric coefficient (d₃₃* = 570 pm/V). In this work, the same composition was synthesized in thin film embodiments on platinized silicon substrates via chemical solution deposition. Overdoping of volatile cations in the precursor solutions was necessary to achieve phase‐pure perovskite. An annealing temperature of 700°C resulted in good ferroelectric properties (P_max = 52 μC/cm² and P_r = 12 μC/cm²). Quantitative compositional analysis of films annealed at 650°C and 700°C indicated that near ideal atomic ratios were achieved. Compositional fluctuations observed through the film thickness were in good agreement with the existence of voids formed between successive spin‐cast layers, as observed with electron microscopy. Bipolar and unipolar strain measurements were performed via double laser beam interferometry and a high effective piezoelectric coefficient (d_33,f) of approximately 75 pm/V was obtained.     

Dielectric Properties and Low‐Temperature Sintering of the Ba0.6Sr0.4TiO3 Ceramics with B2O3/CuO Additions

The sintering behaviors and dielectric properties of Ba_0.6Sr_0.4TiO₃ ceramics were investigated as a function of B₂O₃ and CuO content. The addition of both B₂O₃ and CuO reduced the sintering temperature of Ba_0.6Sr_0.4TiO₃ about 500°C. It was suggested that a liquid phase BaCu(B₂O₅) was formed and assisted the densification of Ba_0.6Sr_0.4TiO₃ ceramics. Ba_0.6Sr_0.4TiO₃ ceramics co‐doped with 3.0 mol% B₂O₃, and 2.0 mol% CuO, sintered at 950°C for 5 h, had a dense microstructure and showed good microwave dielectric properties of a moderate dielectric constant (ε = 1048), low dielectric loss (0.0090) and high tunability (42.2%) at dc electric field of 30 kV/cm.     

Influences of B2O3/CuO additions on the sintering behavior,microstructure and microwave dielectric properties of 6Nd[(Zn0.7Co0.3)0.5Ti0.5]O3–4(Na0.5Nd0.5)TiO3 ceramics

B₂O₃ and CuO were codoped into 6Nd[(Zn_0.7Co_0.3)_0.5Ti_0.5]O₃–4(Na_0.5Nd_0.5)TiO₃ (abbreviated as 6NZCT–4NNT) ceramics as sintering aids. The influences of the sintering aids on the sintering characteristics, microstructure and microwave dielectric properties of the 6NZCT–4NNT ceramics were systematically investigated as a function of the proportion of B₂O₃ and CuO. Codoping could greatly reduce the sintering temperature from 1410 °C to 1150 °C, indicating that B₂O₃/CuO are good sintering aids for 6NZCT–4NNT ceramics. The B₂O₃/CuO sintering aids had no significant impact on the phase purity of the investigated ceramics, even though a solid solution was formed due to Cu²⁺ ion substitution. However, they had evident influences on the surface morphology and grain size. The average grain size was enlarged with increasing amounts of CuO in the B₂O₃/CuO sintering aids. Remarkable deterioration of the microwave dielectric properties for 6NZCT-4NNT ceramics was not observed when codoping an appropriate amount of B₂O₃ and CuO. The 6NZCT–4NNT ceramics codoped with 2.0 mol% B₂O₃ and 2.0 mol% CuO sintered at 1150 °C for 3 h exhibited a homogeneous microstructure and promising microwave dielectric properties: an appropriate dielectric constant (ε_r = 49.37), a high quality factor (QF = 47,295 GHz), and a near-zero temperature coefficient of resonant frequency (TCF = +0.9 ppm/^°C).     

Optimized energy storage performances in morphotropic phase boundary (Na0.8K0.2)0.5Bi0.5TiO3-based lead-free ferroelectric thin films

As microelectronic devices move toward integration and miniaturization, the thin film capacitors with high energy density and charge/discharge efficiency have attracted immense interests in modern electrical energy storage systems. Despite morphotropic phase boundary (Na_0.8K_0.2)_0.5Bi_0.5TiO₃-based lead-free materials with outstanding ferroelectric and piezoelectric properties, while large ferroelectric hysteresis with high remanent polarization (P_r) hinder to improve energy storage capability. Here, novel lead-free relaxor-ferroelectric (RFE) thin film capacitors with high energy density are successfully prepared in (1-x) (Na_0.8K_0.2)_0.5Bi_0.5TiO₃-xBa_0.3Sr_0.7TiO₃ [(1-x)NKBT-xBST] systems. Introducing BST into the NKBT systems is expected to reduce remanent polarization (P_r) on account of coupling reestablishment of the polar nano-regions (PNRs) and improving the relaxation behavior. As a result, 0.6NKBT-0.4BST thin film exhibits high energy density (W_rec ～ 54.79 J/cm³) together with satisfactory efficiency (η ～ 76.42%) at 3846 kV/cm. The stable energy storage performances are achieved within the scope of operating temperatures (20–200 °C) and fatigue cycles (1-10⁷ cycles). This work furnishes a new technological way for the design of high energy-density thin film capacitors.     

Composition‐ and Temperature‐Dependent Large Strain in (1−x)(0.8Bi0.5Na0.5TiO3–0.2Bi0.5K0.5TiO3)– xNaNbO3 Ceramics

Ternary solid solutions of (1 ? x)(0.8Bi_0.5Na_0.5TiO₃–0.2Bi_0.5K_0.5TiO₃)– xNaNbO₃ (BNKT–xNN) lead‐free piezoceramics were fabricated using a conventional solid‐state reaction method. Pure BNKT composition exhibited an electric‐field‐induced irreversible structural transition from pseudocubic to ferroelectric rhombohedral phase at room temperature. Accompanied with the ferroelectric‐to‐relaxor temperature T_F‐R shifted down below room temperature as the substitution of NN, a compositionally induced nonergodic‐to‐ergodic relaxor transition was presented, which featured the pinched‐shape polarization and sprout‐shape strain hysteresis loops. A strain value of ~0.445% (under a driving field of 55 kV/cm) with large normalized strain of ~810 pm/V was obtained for the composition of BNKT–0.04NN, and the large strain was attributed to the reversible electric‐field‐induced transition between ergodic relaxor and ferroelectric phase.     

Low‐temperature sintering and enhanced piezoelectric properties of random and textured PIN–PMN–PT ceramics with Li2CO3

Low‐temperature sintered random and textured 36PIN–30PMN–34PT piezoelectric ceramics were successfully synthesized at a temperature as low as 950°C using Li₂CO₃ as sintering aids. The effects of Li₂CO₃ addition on microstructure, dielectric, ferroelectric, and piezoelectric properties in 36PIN–30PMN–34PT ternary system were systematically investigated. The results showed that the grain size of the specimens increased with the addition of sintering aids. The optimum properties for the random samples were obtained at 0.5 wt% Li₂CO₃ addition, with piezoelectric constant d₃₃ of 450 pC/N, planar electromechanical coupling coefficient k_p of 49%, peak permittivity ε_max of 25 612, remanent polarization P_r of 36.3 μC/cm². Moreover, the low‐temperature‐sintered textured samples at 0.5 wt% Li₂CO₃ addition exhibited a higher piezoelectric constant d₃₃ of 560 pC/N. These results indicated that the low‐temperature‐sintered 36PIN–30PMN–34PT piezoelectric ceramics were very promising candidates for the multilayer piezoelectric applications.     

Dielectric Relaxor Evolution and Frequency‐Insensitive Giant Strains in (Bi0.5Na0.5)TiO3‐Modified Bi(Mg0.5Ti0.5)O3–PbTiO3 Ferroelectric Ceramics

The 0.45Bi(Mg_0.5Ti_0.5)O₃–(0.55 ? x)PbTiO₃–x(Bi_0.5Na_0.5)TiO₃ (BMT–PT–xBNT) ternary solid solution ceramics were prepared via a conventional solid‐state reaction method; the evolution of dielectric relaxor behavior and the electrostrain features were investigated. The XRD and dielectric measurements showed that all studied compositions own a single pseudocubic perovskite structure and undergo a diffuse‐to‐relaxor phase transition owing to the evolution of the domain from a frozen state to a dynamic state. The formation of the above dielectric relaxor behavior was further confirmed by a couple of measurements such as polarization loops, polarization current density curves, as well as bipolar strain loops. A large strain value of ~0.41% at a driving field of 7 kV/mm (normalized strain d₃₃* of ~590 pm/V) was obtained at room temperature for the composition with x = 0.32, which is located near the boundary between ergodic and nonergodic relaxor. Moreover, this electric field‐induced large strain was found to own a frequency‐insensitive characteristic.     

Microstructure and piezoelectric properties of CuO-doped 0.95(K0.5Na0.5)NbO3-0.05Li(Nb0.5Sb0.5)O3 lead-free ceramics

The effects of sintering temperature and the addition of CuO on the microstructure and piezoelectric properties of 0.95(K_0.5Na_0.5)NbO₃-0.05Li(Nb_0.5Sb_0.5)O₃ were investigated. The KNN-5LNS ceramics doped with CuO were well sintered even at 940 °C. A small amount of Cu²⁺ was incorporated into the KNN-5LNS matrix ceramics and XRD patterns suggested that the Cu²⁺ ion could enter the A or B site of the perovskite unit cell and replace the Nb⁵⁺ or Li⁺ simultaneously. The study also showed that the introduction of CuO effectively reduced the sintering temperature and improved the electrical properties of KNN-5LNS. The high piezoelectric properties of d₃₃ = 263 pC/N, k_p = 0.42, Q_m = 143 and tan δ = 0.024 were obtained from the 0.4 mol% CuO doped KNN-5LNS ceramics sintered at 980 °C for 2 h.     

Compositional range and electrical properties of the morphotropic phase boundary in the Na0.5Bi0.5TiO3–K0.5Bi0.5TiO3 system

We have investigated the Na_0.5Bi_0.5TiO₃–K_0.5Bi_0.5TiO₃ (NBT–KBT) system, with its complex perovskite structure, as a promising material for piezoelectric applications. The NBT–KBT samples were synthesized using a solid-state reaction method and characterized with XRD and SEM. Room-temperature XRD showed a gradual change in the crystal structure from tetragonal in the KBT to rhombohedral in the NBT, with the presence of an intermediate morphotropic region in the samples with a compositional fraction x between 0.17 and 0.25. The fitted perovskite lattice parameters confirmed an increase in the size of the crystal lattice from NBT towards KBT, which coincides with an increase in the ionic radii. Electrical measurements on the samples showed that the maximum values of the dielectric constant, the remanent polarization and the piezoelectric coefficient are reached at the morphotropic phase boundary (MPB) (? = 1140 at 1 MHz; P_r = 40 μC/cm²; d₃₃ = 134 pC/N).     

Ferroelectric Bi(Na,K)TiO3-based materials for lead-free piezoelectrics

A lead-free piezoelectric materials of Cu-doped Bi_0.5(Na_0.79K_0.21)TiO₃ (BNKT–xCu) have been synthesized using a conventional ceramic process. The addition of a small amount of CuO increased the d₃₃-value up to 156 pC/N for BNKT–0.6Cu, while the large amout of CuO (>0.6 mol%) decreased it down to 80 pC/N for BNKT–2.0CuO. However, it was found that the mechanical quality factor (Q_m) was not increased until the CuO content was less then 0.6 mol%, but it was significantly increased when CuO exceeded 0.6 mol%, resulting from the development of small defect. The inverse dielectric permittivity followed the Curie–Weiss law above the deviation temperature (T_dev.) at high temperatures for the BNKT–xCu. The thermal hysteresis for BNKT–xCu confirmed that with an increase in the amount of CuO addition, the variation of the temperature in dielectric permittivity maximum (T_m) increased gradually while the depolarization temperature (T_d) decreased during the heating and the cooling cycles.     

Enhanced Dielectric and Ferroelectric Properties of Pb(Mg1/3Nb2/3)0.65Ti0.35O3 Ceramics by ZnO Modification

Phase formation, microstructures, dielectric, and ferroelectric properties of ZnO‐modified Pb(Mg_1/3Nb_2/3)_0.65Ti_0.35O₃ (PMNT/xZnO, where x = 0, 0.4, 2.0, 4.0, and 11.0 mol%) ceramics were studied. A coexistence of rhombohedral and tetragonal ferroelectric phases was observed at room temperature in all samples. The ceramics with the relative densities of 93%–95% were prepared. The modification by ZnO led to an increase in grain sizes of PMNT ceramics. The maximum dielectric constant of the pure PMNT ceramic was increased with x = 0.4–4.0 mol% ZnO doping, with the highest value being observed in the 2.0 mol% sample. Both the temperature at which the transition between rhombohedral and tetragonal ferroelectric phases took place (T_R‐T) and the Curie temperature of the ceramics tended to increase with increasing x. The ferroelectric properties were enhanced with increased remanent polarization and P(E) loop squareness in the compositions with x = 0.4–4.0 mol%. However, the ferroelectric properties were attenuated with x = 11.0 mol%.     

A Novel Magnetodielectric Solid Solution Ceramic 0.4LiFe5O8–0.6Li2MgTi3O8 with Excellent Microwave Dielectric Properties

In this study, a novel spinel solid solution ceramic of 0.4LiFe₅O₈–0.6Li₂MgTi₃O₈ (0.4LFO–0.6LMT) has been developed and investigated. It is found that the 40 mol% LiFe₅O₈ and 60 mol% Li₂MgTi₃O₈ are fully soluble in each other and a disordered spinel phase is formed. The ceramic sample sintered at 1050°C/2 h exhibits both good magnetic and dielectric properties in the frequency range 1–10 MHz, with a permeability between 29.9~14.1 and magnetic loss tangent between 0.12~0.67, permittivity between 16.92~16.94 and dielectric loss tangent between 5.9 × 10^?3–2.3 × 10^?2. The sample also has good microwave dielectric properties with a relative permittivity of 16.1, a high quality factor (Q × f) ~28 500 GHz (at 7.8 GHz). Furthermore, 3 wt% H₃BO₃–CuO (BCu) addition can effectively lower the sintering temperature to 925°C and does not degrade the magnetodielectric properties. The chemical compatibility with silver electrode indicates that this kind of ceramics is a good candidate for the low‐temperature cofired ceramic (LTCC) application.     

Low temperature sintering of lead-free Bi0.5(Na0.82K0.18)0.5TiO3 piezoelectric ceramics by co-doping with CuO and Nb2O5

Effect of excess CuO additive on the sintering behavior and piezoelectric properties of Bi_0.5(Na₈₂K_0.18)_0.5TiO₃ ceramics was investigated. The addition of small amount of excess CuO as low as 1 mol% was quite effective to lower the sintering temperature (T_s) of BNKT ceramics down to 975 °C while their piezoelectric properties were degraded by Cu doping. However, the electric field-induced strain was markedly enhanced by further addition of Nb₂O₅ with CuO without elevating T_s. The normalized strain S_max/E_max of 427 pm/V was obtained with a specimen sintered with 0.02 mol CuO and 0.03 mol Nb₂O₅ in excess.     

The Composition and Temperature‐Dependent Structure Evolution and Large Strain Response in (1−x)(Bi0.5Na0.5)TiO3−xBa(Al0.5Ta0.5)O3 Ceramics

The (1?x) (Bi_0.5Na_0.5)TiO₃?xBa(Al_0.5Ta_0.5)O₃((1?x)BNT‐xBAT) lead‐free piezoceramics was fabricated using a conventional solid‐state reaction method. The temperature and composition‐dependent strain behavior, dielectric, ferroelectric (FE), piezoelectric, and pyroelectric properties have been systematically investigated to develop lead‐free piezoelectric materials with large strain response for actuator application. As the BAT content increased, the FE order is disrupted resulting in a degradation of the remanent polarization, coercive field, and the depolarization temperature (T_d). A large strain of 0.36% with normalized strain d₃₃* = 448pm/V was obtained for the optimum composition x = 0.045 at room temperature. The bipolar and unipolar strains for the compositions x = 0.035 and x = 0.04 reach almost identical maximum values when the temperature is in the vicinity of their respective depolarization temperature (T_d). The Raman‐spectra analysis, macroscopic properties, thermal depolarization results, and temperature‐dependent relationships of both polarization and strain demonstrated that the origin of the large strain response for this investigated system is attributed to a field‐induced relaxor to FE phase transformation.     

Ultra‐Wide Temperature Stable Dielectrics Based on Bi0.5Na0.5TiO3–NaNbO3 System

The microstructure, phase structure, ferroelectric, and dielectric properties of (1?x)Bi_0.5Na_0.5TiO₃‐xNaNbO₃ [(1?x)BNT‐xNN] ceramics conventionally sintered in the temperature range of 1080°C–1120°C were investigated as a candidate for capacitor dielectrics with wide temperature stability. Perovskite phase with no secondary impurity was observed by XRD measurement. With increasing NN content, (1?x)BNT‐xNN was found to gradually transform from ferroelectric (x = 0–0.05) to relaxor (x = 0.10–0.20) and then to paraelectric state (x = 0.25–0.35) at room temperature, indicated by P–I–E loops analysis, associated with greatly enhanced dielectric temperature stability. For the samples with x = 0.25–0.35, the temperature coefficient of capacitance (TCC) was found <11% in an ultra‐wide temperature range of ?60°C–400°C with moderate dielectric constant and low dielectric loss, promising for temperature stable capacitor applications.     

High‐Temperature Multilayer Ceramic Capacitors Based on 100−x(94Bi1/2Na1/2TiO3–6BaTiO3)–xK0.5Na0.5NbO3

The potential high‐temperature dielectric materials 100?x(94Bi_1/2Na_1/2TiO₃–6BaTiO₃)–xK_0.5Na_0.5NbO₃ with x = 12, 18, and 24 were processed as bulk samples in order to examine the reduction of sintering temperature by means of CuO as sintering aid. Due to the successful reduction of sintering temperature, low cost Ag:Pd could be used as a co‐fired electrode material for multilayer ceramic capacitors (MLCCs). Fabrication of 8 μm thick, dense MLCCs with self‐contained, nonreactive electrodes is reported for a wide range of compositions of Bi_1/2Na_1/2TiO₃–BaTiO₃–K_0.5Na_0.5NbO₃. Among the manufactured MLCCs, those with compositions x = 24 showed the most promising dielectric properties for applications where high operating temperatures are needed. The temperature‐dependence of permittivity was quite low, revealing a change of less than ±10% compared to its 150°C‐value in the range of 40°C–225°C. For samples sintered at 1000°C, an RC constant of about 300 s was obtained at 150°C. Furthermore, these x = 24 MLCCs exhibited the finest microstructures among the compositions examined; making it a suitable candidate for further miniaturization of layer thickness as required for state‐of‐the art devices.     

Microstructure and piezoelectric properties of CuO added (K, Na, Li)NbO3 lead-free piezoelectric ceramics

Lead-free Na_0.5K_0.5NbO₃ (NKN) and Na_0.475K_0.475Li_0.05NbO₃ (NKLN) ceramics doped with CuO were prepared by the mixed oxide route. The powders were calcined at 850-930 °C and sintered at 850-1100 °C. Small additions of CuO reduced the sintering temperature and increased the density to 96% theoretical. Cu first appears to enter the A site then the B site. In NKLN the orthorhombic-tetragonal and tetragonal-cubic phase transitions are approximately 150 °C lower and 50 °C higher, respectively than in NKN. With increasing addition of Cu to NKN and NKLN the remanent polarization (P_r) increased and coercive field (E_c) decreased. NKLN prepared with 0.4 wt% CuO exhibited a saturation polarization (P_sat) of 30 μC/cm², remanent polarization (P_r) of 27 μC/cm² and coercive field (E_c) of 1.0 kV/mm. CuO caused the NKLN ceramics to harden considerably; the mechanical quality factor (Q_m) increased from 50 to 260, d₃₃ ∼ 285 and piezoelectric coupling factors were >0.4.     

Temperature‐insensitive strain behavior in 0.99[(1−x)Bi0.5(Na0.80K0.20)0.5TiO3−xBiFeO3]–0.01Ta lead‐free piezoelectric ceramics

Lead‐free 0.99[(1?x)Bi_0.5(Na_0.80K_0.20)_0.5TiO₃?xBiFeO₃]–0.01Ta (BNKT20–100xBF–1Ta) lead‐free piezoelectric ceramics were fabricated through conventional solid state sintering method. Results showed that change of BF content in the BNKT20–100xBF–1Ta induced a phase transition from ferroelectric to ergodic relaxor phase with a significant disruption of the long‐range ferroelectric order. A large electric‐field‐induced strain of 0.36% (at 80 kV/cm driving field, corresponding to a large signal of ~450 pm/V) which is derived from a reversible field‐induced ergodic relaxor to ferroelectric phase transformation, was obtained in the composition with x=0.01 near the ferroelectric‐ergodic relaxor phase boundary. Moreover, an attractive property for application in nonlinear actuators demanding enhanced thermal stability was obtained in this material, which showed a temperature‐insensitive strain characteristic in the temperature range from room temperature to 100°C.     

Piezoelectric and ferroelectric properties of (Bi,Na)TiO3–(Bi,Li)TiO3–(Bi,K)TiO3 ceramics for accelerometer application

The piezoelectric and ferroelectric properties of 0.76(Bi_0.5Na_0.5)TiO₃–0.04(Bi_0.5Li_0.5)TiO₃–0.2(Bi_0.5K_0.5)TiO₃ (abbreviated as 0.76BNT–0.04BLT–0.2BKT) ceramics were investigated to clarify the optimal sintering temperature, and the vibration characteristics were examined for a compression‐mode accelerometer assembly in which 0.76BNT–0.04BLT–0.2BKT ceramics sintered at the optimized temperature served as the piezoelectric elements. The increase in the grain size of the 0.76BNT–0.04BLT–0.2BKT ceramics with the sintering temperature provides a beneficial contribution to the piezoelectric coefficient; however, it detrimentally contributes to the depolarization temperature. The charge sensitivity of the prototype accelerometers was evaluated with changes in the seismic mass and the layer number of the piezoceramics. The deviation between the theoretical and measured values of charge sensitivity was less than 10%.