横向抗弥散多光谱TDI CCD图像传感器

时间延迟积分电荷耦合器件(TDI CCD)主要应用于弱光信号探测,其在强光应用场合容易出现弥散现象。针对该问题,研制了横向抗弥散多光谱TDI CCD图像传感器。该器件包含四个多光谱段(B1～B4区),有效像元数为3 072元,像元尺寸为28μm×28μm。大像元可以在弱光环境下提供良好的光谱区分能力,通过滤光片可获得蓝光、绿光、红光和近红外波段的图像。为了减小抗弥散对器件满阱电子数的不利影响,采用了紧凑的抗弥散结构,仅占像元面积的7.1%。器件满阱电子数为500ke-,抗弥散能力为100倍,读出噪声小于等于70e-,动态范围大于等于7143∶1。     

长线列CMOS图像传感器的性能优化设计

设计了一种基于电容反馈跨阻放大器(CTIA)的长线列CMOS图像传感器。为减小器件功耗和面积,采用基于单端四管共源共栅运算放大器。为提高信号读出速率,采用没有体效应的PMOS源跟随器,同时减小PMOS管的宽长比,有效减小了输出总线寄生电容的影响。在版图设计上,采用顶层金属走线,降低寄生电阻和电容,提高了长线列CMOS图像传感器的读出速率和输出线性范围。采用0.35μm 3.3V标准CMOS工艺对传感器进行流片,得到器件像元阵列为5×1 030,像元尺寸为20μm×20μm。测试结果表明:该传感器在积分时间为1ms、读出速率为4MHz的情况下工作稳定,其线性度达到98%,线性动态范围为76dB。     

一种大视场TDICCD相机的多传感器图像配准方法

某大视场TDICCD相机采用多片TDICCD拼接,多通道输出全色和多光谱遥感图像,为了获得良好的融合和拼接效果,本文提出了一种基于双线性插值的空域互相关配准方法。首先,应用双线性插值算法对多光谱各谱段图像进行放大,得到和全色图像相同大小的多光谱图像。然后,采用空域互相关配准方法对多光谱各谱段图像和全色图像进行配准,并对有重叠像元的两通道图像进行拼接。实验结果表明,本文方法快速,抗噪性和鲁棒性较高,使大视场TDICCD相机多通道遥感图像配准取得了良好的效果。     

高帧频高灵敏度线列PIN-CMOS图像传感器研究

设计了一款高帧频高灵敏度双通道16元线列PIN-CMOS图像传感器。相对于传统的pn结光电二极管,PIN光电二极管具有结电容小和量子效率高的优点,可以降低CTIA像素电路的噪声,提高信噪比;同时采用一种新型的相关双采样电路结构,可以在边积分边读出的模式下实现相关双采样,抑制像素复位带来的KTC噪声。基于0.35μm PIN-CMOS工艺进行了线列CMOS图像传感器流片,并对器件的光电性能进行了测试。测试结果表明:在像元尺寸为90μm×90μm,700nm波长下,器件灵敏度达3000V/(lx·s),量子效率为96%;在40kHz高帧频、0.05lx光照条件下器件信噪比为7,适于弱信号下的高速探测。     

多光谱TDI-CMOS图像传感器读出电路设计

针对3D集成式多光谱TDI-CMOS图像传感器的数字化处理和高速读出需求,为了解决与TDICCD探测器的整体布局、物理尺寸和接口的匹配性和一致性问题,研制了适用于五谱段TDICCD的CMOS读出电路芯片。该读出电路芯片创新地设计了一种使用多相位ADC时钟、支持相关多次采样的新型列级单斜ADC电路结构,实现了TDICCD信号的数字化和高速输出,有效提升了探测器的动态范围和噪声指标。流片测试结果表明：读出电路芯片的功能正常,集成式TDICCD的成像效果良好,新型列级ADC工作正常,读出电路以最小9.5μs的行周期输出14 bit数据,相关多次采样具备降低输出信号噪声的作用,实现了TDICCD信号的高精度数字化处理和高速输出,满足3D集成式TDI-CMOS图像传感器的研制要求。     

256×256元IRCCD的设计及灵敏度改善

叙述了256×256元PtSi肖特基势垒红外焦平面的工作原理和设计考虑。器件采用四相ITCCD结构。像元尺寸和填充系数分别为60×50(μm~2)和35％。采用薄金属膜和光腔结构改善了器件的灵敏度。势垒高度为0.22ev,相应的截止波长为5.6μm。在室温目标下,用该器件摄得了较好的红外图像。     

1024×1024全帧CCD器件

采用2μm设计规则,在2μm工艺线上,成功研制了1 024×1 024全帧CCD器件。该1 024×1 024全帧CCD器件的有效像元数为1 024×1 024,像元尺寸为11μm×11μm,有效光敏面积为11.3mm×11.3mm,光响应波长范围为400～1 100nm。成像区域横向分为2个区,纵向分为2个区,可由1路、2路和4路输出,有9种读出模式。该器件具有2×2的像元合并功能,能作为512×512（像元尺寸为22μm×22μm）和规格的器件使用。该器件数据速率为4×40M,数据速率高。器件采用MPP工作模式,暗电流低;采用薄栅氧化,具有100krad（Si）抗辐照能力;适合在高温、辐照环境和微光环境下成像应用。     

一种遥感相机的CCD交错拼接方法研究

随着技术的不断进步,遥感相机也向着宽谱段、大覆盖范围的方向发展.由于现有CCD的像元数有限,不能满足覆盖大视场的要求,需要对其进行拼接.通过分析现有拼接技术的优缺点,本文设计了一种不同于传统机械拼接与光学拼接的交错式机械拼接方法,并针对某可见、近红外宽谱段相机采用两片TDICCD进行了交错式机械拼接实验.实验结果表明,该方法的搭接误差小于2μm,平行误差小于3μm,共面误差小于6μm,满足相机的成像要求,并可在相机焦平面拼接的研究与实践中推广使用.     

InSb面阵探测器铟柱缺陷成因与特征研究

通过基于正性光刻胶的不同像元尺寸铟柱阵列及器件制备,研究In Sb面阵探测器铟柱缺陷成因与特征.分别研制了像元尺寸为50μm×50μm、30μm×30μm、15μm×15μm的面阵探测器的铟柱阵列,并制备出In Sb面阵探测器,利用高倍光学显微镜和焦平面测试系统对制备的芯片表面形貌、器件连通性及性能进行了检测与分析.研究结果表明:当像元尺寸为50μm×50μm时,芯片表面形貌和器件连通性测试结果较好;随着像元尺寸减小,芯片表面会出现铟柱相连或铟柱缺失缺陷,器件连通性测试结果与表面形貌相吻合.铟柱相连缺陷是由光刻剥离时残留铟渣引起的铟相连造成;铟柱缺失缺陷是由光刻时残留光刻胶底膜引起的铟柱缺失造成.器件相连缺陷元的响应电压与正常元基本相同,缺失缺陷元的响应电压基本为0,其周围最相邻探测单元响应电压相比正常元增加了约25%.器件缺陷元的研究结果,对通过优化探测器制作水平提升其性能具有重要参考意义.     

高性能肖特基势垒IR-CCD摄像传感器(特邀)

研制了32×63和64×128像素高性能PtSi和Pd_2Si肖特基势垒IR-CCD摄像传感器。80K下工作的PtSi肖特基势垒探测器(SBD_S)在3～5μm光谱区内具有百分之几的量子效率,截止波长6.0μm。工作在120～140K之间的Pd_2Si SBD_s在1.0～2.5μm光谱区的量子效率为1.0～8.0%,截止波长3.6μm。用64×128像素PtSi肖特基势垒IR-CCD摄像器件在60帧/秒的与IR兼容的TV摄像机中已经摄出了高质量的热像。用Pd_2Si肖特基势垒IR-CCD摄像传感器还得到了质量良好的SWIR反射红外摄像。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first     

JOURNAL OF ELECTRONICS(CHINA)

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NOTICE OF CHANGING JOURNAL OF ELECTRONICS （CHINA） TO MICROSYSTEMS ＆ NANOENGINEERING

正Journal of Electronics(China)(JE)was founded in 1984,sponsored by the Institute of Electronics,Chinese Academy of Sciences.JE is one of the first English academic journals in China in the field of Electronics and Information technology.The journal was published quarterly since it was launched in 1984 to 2003,then it is published bimonthly till now.During